Conferences related to Logic gates

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2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)

The world's premiere conference in MEMS sensors, actuators and integrated micro and nano systems welcomes you to attend this four-day event showcasing major technological, scientific and commercial breakthroughs in mechanical, optical, chemical and biological devices and systems using micro and nanotechnology.The major areas of activity in the development of Transducers solicited and expected at this conference include but are not limited to: Bio, Medical, Chemical, and Micro Total Analysis Systems Fabrication and Packaging Mechanical and Physical Sensors Materials and Characterization Design, Simulation and Theory Actuators Optical MEMS RF MEMS Nanotechnology Energy and Power


2019 56th ACM/ESDA/IEEE Design Automation Conference (DAC)

EDA (Electronics Design Automation) is becoming ever more important with the continuous scaling of semiconductor devices and the growing complexities of their use in circuits and systems. Demands for lower-power, higher-reliability and more agile electronic systems raise new challenges to both design and design automation of such systems. For the past five decades, the primary focus of research track at DAC has been to showcase leading-edge research and practice in tools and methodologies for the design of circuits and systems.

  • 2022 59th ACM/ESDA/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2021 58th ACM/ESDA/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2020 57th ACM/ESDA/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2018 55th ACM/ESDA/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2017 54th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2016 53nd ACM/EDAC/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2015 52nd ACM/EDAC/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2014 51st ACM/EDAC/IEEE Design Automation Conference (DAC)

    DAC Description for TMRF The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading

  • 2013 50th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 session on design methodologies and EDA tool developments, keynotes, panels, plus User Track presentations. A diverse worldwide community representing more than 1,000 organization attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2012 49th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The Design Automation Conference (DAC) is the premier event for the design of electronic circuits and systems, and for EDA and silicon solutions. DAC features a wide array of technical presentations plus over 200 of the leading electronics design suppliers

  • 2011 48th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The Design Automation Conference is the world s leading technical conference and tradeshow on electronic design and design automation. DAC is where the IC Design and EDA ecosystem learns, networks, and does business.

  • 2010 47th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The Design Automation Conference (DAC) is the premier event for the design of electronic circuits and systems, and for EDA and silicon solutions. DAC features a wide array of technical presentations plus over 200 of the leading electronics design suppliers.

  • 2009 46th ACM/EDAC/IEEE Design Automation Conference (DAC)

    DAC is the premier event for the electronic design community. DAC offers the industry s most prestigious technical conference in combination with the biggest exhibition, bringing together design, design automation and manufacturing market influencers.

  • 2008 45th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The Design Automation Conference (DAC) is the premier event for the design of electronic circuits and systems, and for EDA and silicon solutions. DAC features a wide array of technical presentations plus over 250 of the leading electronics design suppliers.

  • 2007 44th ACM/IEEE Design Automation Conference (DAC)

    The Design Automation Conference (DAC) is the premier Electronic Design Automation (EDA) and silicon solution event. DAC features over 50 technical sessions covering the latest in design methodologies and EDA tool developments and an Exhibition and Demo Suite area with over 250 of the leading EDA, silicon and IP Providers.

  • 2006 43rd ACM/IEEE Design Automation Conference (DAC)

  • 2005 42nd ACM/IEEE Design Automation Conference (DAC)

  • 2004 41st ACM/IEEE Design Automation Conference (DAC)

  • 2003 40th ACM/IEEE Design Automation Conference (DAC)

  • 2002 39th ACM/IEEE Design Automation Conference (DAC)

  • 2001 38th ACM/IEEE Design Automation Conference (DAC)

  • 2000 37th ACM/IEEE Design Automation Conference (DAC)

  • 1999 36th ACM/IEEE Design Automation Conference (DAC)

  • 1998 35th ACM/IEEE Design Automation Conference (DAC)

  • 1997 34th ACM/IEEE Design Automation Conference (DAC)

  • 1996 33rd ACM/IEEE Design Automation Conference (DAC)


2019 Compound Semiconductor Week (CSW)

CSW2019 covers all aspects of compound semiconductors – including growth, processing, devices, physics, spintronics, quantum information, MEMS/NEMS, sensors, solar cells, and novel applications. The conference deals with III-V compounds such as GaAs, InP, and GaN; II-VI compounds such as ZnSe and ZnS; carbon related materials; oxide semiconductors; organic semiconductors etc.


2019 IEEE 28th International Symposium on Industrial Electronics (ISIE)

The conference will provide a forum for discussions and presentations of advancements inknowledge, new methods and technologies relevant to industrial electronics, along with their applications and future developments.


2019 IEEE 49th International Symposium on Multiple-Valued Logic (ISMVL)

Multiple-Valued Logic has many aspects. This yearly event attracts researchers in this area.

  • 2018 IEEE 48th International Symposium on Multiple-Valued Logic (ISMVL)

    The Conference will bring together researchers from computer science, engineering, mathematics, and further disciplines to discuss new developments and directions for future research in the area of multi-valued logic and related fields. Research papers, surveys, or tutorial papers on any subject in these areas are within the scope of the symposium.

  • 2017 IEEE 47th International Symposium on Multiple-Valued Logic (ISMVL)

    The symposium encompasses all aspects of multiple-valued logic and application.

  • 2016 IEEE 46th International Symposium on Multiple-Valued Logic (ISMVL)

    Multiple-valued logic (MVL) is the study of circuits, oftware, architectures, and systems in which information is carried by more than two values, or where information is presented in unconventional, i.e., non-binary-weighted ways. The scope of ISMVL covers a broad range of related topics, including fundamental algebra, theory and philosophy, logic synthesis, decision diagrams, reversible computing, quantum computing, microelectronic circuits, testing andverification, architectures, and modelling of novel devices, all within a multiple-valued framework.

  • 2015 IEEE International Symposium on Multiple-Valued Logic (ISMVL)

    Multiple-valued logic (MVL) is the study of circuits, software, architectures, and systems in which information is carried by more than two values, or where information is represented in unconventional, i.e., non-binary-weighted ways. The scope of ISMVL covers a broad range of related topics, including fundamental algebra, theory and philosophy, logic synthesis, decision diagrams, reversible computing, quantum computing, microelectronic circuits, testing and verification, architectures, and modelling of novel devices, all within a multiple-valued framework.

  • 2014 IEEE 44th International Symposium on Multiple-Valued Logic (ISMVL)

    The aim of the conference is to present and disseminate knowledge in the areas related to multiple-valued logic, that is, to computing that is tolerant of imprecision, uncertainty, partial truth, and approximative reasoning. Specific topics include (but are not limited to):- Algebra and Formal Aspects- Automatic Test Pattern Generation- Automatic Reasoning- Boolean Satisfiability- Circuit/Device Implementation- Communication Systems- Computer Arithmetic- Data Mining- Fuzzy Systems and Soft Computing- Image Processing- Logic Design and Switching Theory- Logic Programming- Machine Learning and Robotics- Mathematical Fuzzy Logic- Nanotechnology- Philosophical Aspects- Quantum Computing- Quantum Cryptography- Reversible Computation- Signal Processing- Spectral Techniques- Verification

  • 2013 IEEE 43rd International Symposium on Multiple-Valued Logic (ISMVL)

    ISMVL is the principal annual meeting for the dissemination and discussion of research in multiple-valued logic and related areas. Topics cover all aspects of theory, implementation and application.

  • 2012 IEEE 42nd International Symposium on Multiple-Valued Logic (ISMVL)

    ISMVL is the principal annual meeting for the dissemination and discussion of research in multiple-valued logic and related areas. Topics cover all aspects of theory, implementation and application.

  • 2011 IEEE 41st International Symposium on Multiple-Valued Logic (ISMVL)

    areas of multiple-valued logic, including but not limited to: Algebra and Formal Aspects, ATPG and SAT, Automatic Reasoning, Circuit/Device Implementation, Communication Systems, Computer Arithmetic, Data Mining, Fuzzy Systems and Soft Computing, Image Processing, Logic Design and Switching Theory, Logic Programming Machine Learning and Robotics, Mathematical Fuzzy Logic, Nano Technology, Philosophical Aspects Quantum Computing, Signal Processing, Spectral Techniques, Verification.

  • 2010 40th IEEE International Symposium on Multiple-Valued Logic (ISMVL 2010)

    The Multiple-Valued Logic Technical Committee of the IEEE Computer Society will hold its 40th annual symposium on May 26-28, 2010 in Casa Convalesc ncia, Barcelona, Spain. The event is sponsored by the IEEE Computer Society, and is organized by the Artificial Intelligence Research Institute of the Spanish National Research Council (IIIA-CSIC), the University of Barcelona, the Autonomous University of Barcelona, and the University of Lleida.

  • 2009 39th IEEE International Symposium on Multiple-Valued Logic (ISMVL 2009)

    The area of multiple-valued logic is covered, including but not limited to: Algebra and Formal Aspects, Automatic Reasoning, Logic Programming, Philosophical Aspects, Fuzzy Logic and Soft Computing, Data Mining, Machine Learning and Robotics, Quantum Computing, Logic Design and Switching Theory, Test and Verification, Spectral Techniques, Circuit/Device Implementation, VLSI Architecture, VLSI Computing, System-on-Chip Technology, Nano Technology.

  • 2008 38th IEEE International Symposium on Multiple-Valued Logic (ISMVL 2008)

    The aim of ISMVL is to publish and disseminate knowledge in the field of multiple-valued logic and related areas. All aspects of MVL are considered at the symposium, ranging form algebra, formal aspects, and philosophy to logic design, verification, and circuit implementation.

  • 2007 37th IEEE International Symposium on Multiple-Valued Logic (ISMVL 2007)

  • 2006 36th IEEE International Symposium on Multiple-Valued Logic (ISMVL 2006)

  • 2005 35th IEEE International Symposium on Multiple-Valued Logic (ISMVL 2005)


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Periodicals related to Logic gates

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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Circuits and Systems II: Express Briefs, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Communications Magazine, IEEE

IEEE Communications Magazine was the number three most-cited journal in telecommunications and the number eighteen cited journal in electrical and electronics engineering in 2004, according to the annual Journal Citation Report (2004 edition) published by the Institute for Scientific Information. Read more at http://www.ieee.org/products/citations.html. This magazine covers all areas of communications such as lightwave telecommunications, high-speed data communications, personal communications ...


Communications, IEEE Transactions on

Telephone, telegraphy, facsimile, and point-to-point television, by electromagnetic propagation, including radio; wire; aerial, underground, coaxial, and submarine cables; waveguides, communication satellites, and lasers; in marine, aeronautical, space and fixed station services; repeaters, radio relaying, signal storage, and regeneration; telecommunication error detection and correction; multiplexing and carrier techniques; communication switching systems; data communications; and communication theory. In addition to the above, ...


Computer

Computer, the flagship publication of the IEEE Computer Society, publishes peer-reviewed technical content that covers all aspects of computer science, computer engineering, technology, and applications. Computer is a resource that practitioners, researchers, and managers can rely on to provide timely information about current research developments, trends, best practices, and changes in the profession.


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Most published Xplore authors for Logic gates

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Xplore Articles related to Logic gates

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Precision Analog Circuit Design in SOI CMOS for a Wide Temperature Range up to 350 °C

PRIME 2012; 8th Conference on Ph.D. Research in Microelectronics & Electronics, 2012

High resolution ADCs or voltage references require precision analog circuit design. However, design for a wide temperature range up to 350 deg C has been so far strongly impeded by a high dependency of the circuits’ electrical properties, high leakage currents and severe performance losses. In this paper we present a body-biasing approach to reduce leakage currents and simultaneously improve ...


Configuring and Troubleshooting IPv6 on Gateway Routers and Hosts

Deploying IPv6 in Broadband Access Networks, None

This chapter contains sections titled:IPv6 Support on Gateway RoutersIPv6 Support on Windows XP, Windows Vista, and Windows Server 2003 and 2008IPv6 Support on LinuxIPv6 Support on MAC OS XPPPv6 Support on MAC OS XIPv6 Support on SolarisTroubleshooting IPv6 on GWR and HostsSummaryReferences


High Efficiency Isolated Half-Bridge Gate Driver with PCB Integrated Transformer

5th International Conference on Integrated Power Electronics Systems, 2008

This paper describes in detail a novel concept for isolated gate drivers by combining the advantages of printed circuit board (PCB) integrated transformers with the high efficiency of a resonance driven voltage clamped gate drive circuit. The pros and cons of PCB integrated transformers in gate drive applications are discussed. The used resonance driven voltage clamped gate drive circuit is ...


Noise Characteristics and Modeling of Lubistor

SOI Lubistors: Lateral, Unidirectional, Bipolar-type Insulated-gate Transistors, None

This chapter describes the noise characteristics of various SOI Lubistors with anode-offset regions. The static characteristics of these devices are modeled for the noise analysis; the model is composed of a series of a MOSFET and the pn junction. It is shown experimentally that the noise power of the devices is proportional to_I__A__n_(_n_> 0), where_I__A_is the anode current. Since the ...


Experimental Study of Two-Dimensional Confinement Effects on Reverse-Biased Current Characteristics of Ultra-Thin SOI Lubistors

SOI Lubistors: Lateral, Unidirectional, Bipolar-type Insulated-gate Transistors, None

In this chapter, the low-temperature behavior of reverse-biased Lubistors fabricated with a 10-nm-thick silicon-on-insulator (SOI) layer is described. Step-like current dependence on reverse bias is observed even at room temperature as well as at low temperature, which suggests distinct quantum transport in the thin silicon layer. It is demonstrated that the effective activation energies of generation-recombination centers are shallower than ...


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Educational Resources on Logic gates

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IEEE.tv Videos

FinSAL: A Novel FinFET Based Secure Adiabatic Logic for Energy-Efficient and DPA Resistant IoT Devices - Himanshu Thapliyal: 2016 International Conference on Rebooting Computing
Erasing Logic-Memory Boundaries in Superconductor Electronics - Vasili Semenov: 2016 International Conference on Rebooting Computing
Quantum Computation - ASC-2014 Plenary series - 4 of 13 - Tuesday 2014/8/12
Applying Control Theory to the Design of Cancer Therapy
BSIM Spice Model Enables FinFET and UTB IC Design
Dynamic Logic Example
A perspective shift from Fuzzy logic to Neutrosophic Logic - Swati Aggarwal
Similarity and Fuzzy Logic in Cluster Analysis
The Hertzsprung-Russell Diagram: Introduction to Fuzzy Logic
Navigation and Control of Unmanned Vehicles: A Fuzzy Logic Perspective
Synchronised 4-Phase Resonant Power Clock Supply for Energy Efficient Adiabatic Logic: IEEE Rebooting Computing 2017
Towards Logic-in-Memory circuits using 3D-integrated Nanomagnetic Logic - Fabrizio Riente: 2016 International Conference on Rebooting Computing
Multi-Level Optimization for Large Fan-In Optical Logic Circuits - Takumi Egawa - ICRC 2018
The Sorites Paradox: Introduction to Fuzzy Logic
Hamid R Tizhoosh - Fuzzy Image Processing
2013 IEEE Robert N. Noyce Medal
Provably-Correct Robot Control with LTLMoP, OMPL and ROS
IRDS: Beyond CMOS & Emerging Research Materials - Shamik Das at INC 2019
Low-energy High-performance Computing based on Superconducting Technology
Plastic Logic's QUE E-Reader is Best of CES

IEEE-USA E-Books

  • Precision Analog Circuit Design in SOI CMOS for a Wide Temperature Range up to 350 °C

    High resolution ADCs or voltage references require precision analog circuit design. However, design for a wide temperature range up to 350 deg C has been so far strongly impeded by a high dependency of the circuits’ electrical properties, high leakage currents and severe performance losses. In this paper we present a body-biasing approach to reduce leakage currents and simultaneously improve the circuit’s performance, i.e. intrinsic gain and bandwidth, and allow operation in the moderate inversion region of the transistor devices. The method presented here allows FD (fully depleted) device characteristics in a 1.0 micrometer PD (partially depleted) SOI (silicon-on-insulator) CMOS process. Results report a leakage current reduction of two orders of magnitude and a 200 % improvement of the gm/Id factor in the moderate inversion region of the transistor.

  • Configuring and Troubleshooting IPv6 on Gateway Routers and Hosts

    This chapter contains sections titled:IPv6 Support on Gateway RoutersIPv6 Support on Windows XP, Windows Vista, and Windows Server 2003 and 2008IPv6 Support on LinuxIPv6 Support on MAC OS XPPPv6 Support on MAC OS XIPv6 Support on SolarisTroubleshooting IPv6 on GWR and HostsSummaryReferences

  • High Efficiency Isolated Half-Bridge Gate Driver with PCB Integrated Transformer

    This paper describes in detail a novel concept for isolated gate drivers by combining the advantages of printed circuit board (PCB) integrated transformers with the high efficiency of a resonance driven voltage clamped gate drive circuit. The pros and cons of PCB integrated transformers in gate drive applications are discussed. The used resonance driven voltage clamped gate drive circuit is analyzed, the efficiency of the driver circuit is calculated and compared with the measured one. Overall measurements on the developed half-bridge driver prototype are presented and principle limitations are discussed.

  • Noise Characteristics and Modeling of Lubistor

    This chapter describes the noise characteristics of various SOI Lubistors with anode-offset regions. The static characteristics of these devices are modeled for the noise analysis; the model is composed of a series of a MOSFET and the pn junction. It is shown experimentally that the noise power of the devices is proportional to_I__A__n_(_n_> 0), where_I__A_is the anode current. Since the noise characteristics are not explained by conventional theory, a new model based of a phenomenological consideration is proposed. It is shown that the proposed basic model, which is compatible with the conventional Hooge model, can explain the experimental results. The influence of the anode-offset length is also discussed and modeled. [Reprinted with permission from S. Wakita and Y. Omura,_Journal of Applied Physics_, vol. 91, p. 2143, 2002. Copyright 2002, American Institute of Physics.]

  • Experimental Study of Two-Dimensional Confinement Effects on Reverse-Biased Current Characteristics of Ultra-Thin SOI Lubistors

    In this chapter, the low-temperature behavior of reverse-biased Lubistors fabricated with a 10-nm-thick silicon-on-insulator (SOI) layer is described. Step-like current dependence on reverse bias is observed even at room temperature as well as at low temperature, which suggests distinct quantum transport in the thin silicon layer. It is demonstrated that the effective activation energies of generation-recombination centers are shallower than simply expected, which has been examined on the basis of theoretical calculations. The quantum confinement effect on the generation--recombination process is strongly illustrated under the reverse-biased conditions. [Copyright 2007. The Japan Society of Applied Physics. Y. Omura, Experimental study of two-dimensional confinement effects on reverse-biased current characteristics of ultra-thin silicon-on-insulator lateral, unidirectional, bipolar-type insulated-gate transistors,_Japanese Journal of Applied Physics_, vol. 46, pp. 2968-2972, 2007.]

  • Introduction to Field‐Effect Transistors

    Although bipolar junction transistors (BJTs) are still used in the high‐frequency circuits such as in radio frequency circuits, the throne is captured by the metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) and they continue to drive the semiconductor industry even today. This chapter helps to develop a basic understanding of the conventional MOSFETs. It presents a subtle discussion of the various modes of operation of these devices. The chapter describes how basic circuits can be formed using MOSFETs. It discusses the implementation of circuits with the help of MOSFET as a switch. The chapter also describes the gate induced drain leakage (GIDL) in MOSFETs, which arises due to band‐to‐band tunnelling (BTBT), and the direct source to drain tunneling (DSDT). One of the approaches proposed to mitigate DSDT is to use a different crystal orientation of silicon for active device layer.

  • An ECL 2.8ns 16K RAM with 1.2K logic gate array

    None

  • Fundamentals of Electronic Power Conversion

    This chapter aims to give sufficient knowledge of how electric power is converted using electronic power converters, in order to facilitate the study of electric drives. Furthermore, it presents how inverters operate to allow power to be fed into grids from low power power plants such as small photovoltaic generators. A concise description of the behaviour of the devices, as well as an introduction to approximations in such a way that they can be analysed using the linear circuit concepts. Rectifiers are devices that convert AC power into DC without affecting (if we disregard inner power losses) the transferred power. This concept is illustrated, showing single- phase and three-phase rectifiers.

  • Two approaches to charge control in saturated logic gates

    None

  • Device Architectures to Mitigate Challenges in Junctionless Field‐Effect Transistors

    This chapter discusses the device architectures, which have the potential to enable the junctionless field‐effect transistors (JLFETs) to replace the conventional metal‐oxide‐semiconductor field‐effect transistors (MOSFETs). JLFETs with an additional source/drain implantation are known as junctionless accumulation‐mode field‐effect transistors (JAMFETs). Although the JAMFETs offer a significantly high drain current as compared to the JLFETs, they are more susceptible to the short‐channel effects as compared to the JLFETs due to a reduction in the effective channel length owing to the high‐low junction. The bulk planar JLFET (BPJLFET) consists of a uniformly doped active device layer, which does not have any source/channel or channel/drain metallurgical junction. To achieve volume depletion in a JLFET, an ultrathin active silicon film is required and the film doping should be high enough to achieve a decent source/drain series resistance while realizing efficient volume depletion.