Conferences related to Insulator Reliability

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2021 IEEE Photovoltaic Specialists Conference (PVSC)

Photovoltaic materials, devices, systems and related science and technology


2021 IEEE Pulsed Power Conference (PPC)

The Pulsed Power Conference is held on a biannual basis and serves as the principal forum forthe exchange of information on pulsed power technology and engineering.


2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2020 IEEE International Power Modulator and High Voltage Conference (IPMHVC)

This conference provides an exchange of technical topics in the fields of Solid State Modulators and Switches, Breakdown and Insulation, Compact Pulsed Power Systems, High Voltage Design, High Power Microwaves, Biological Applications, Analytical Methods and Modeling, and Accelerators.


2020 IEEE International Reliability Physics Symposium (IRPS)

Meeting of academia and research professionals to discuss reliability challenges


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Periodicals related to Insulator Reliability

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Advanced Packaging, IEEE Transactions on

The IEEE Transactions on Advanced Packaging has its focus on the modeling, design, and analysis of advanced electronic, photonic, sensors, and MEMS packaging.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.


Design & Test of Computers, IEEE

IEEE Design & Test of Computers offers original works describing the methods used to design and test electronic product hardware and supportive software. The magazine focuses on current and near-future practice, and includes tutorials, how-to articles, and real-world case studies. Topics include IC/module design, low-power design, electronic design automation, design/test verification, practical technology, and standards. IEEE Design & Test of ...


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


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Most published Xplore authors for Insulator Reliability

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Xplore Articles related to Insulator Reliability

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Improving insulator reliability with insulating barriers

IEEE Transactions on Electrical Insulation, 1990

When an insulating barrier is set up on an insulator with an inner electrode, suppression of negative surface leaderlike discharge and increase in AC flashover voltage are observed over a range of barrier distance (the distance between the HV electrode and the barrier) of <or approximately=15 mm (critical value). When the barrier distance is longer than the critical value, a ...


Improvement of suspension insulator reliability by porcelain proof testing

1968 8th Electrical Insulation Conference, 1968

Modern overhead lines, particularly at EHV levels require suspension insulators of extremely high reliability. One of the most important properties required for suspension insulators is mechanical strength under tension. However, both the conventional M&E (Mechanical & Electrical) test (USASI 29.2 9.4.5)1)and the routine proof test (9.5.2) cannot give adequate assurance that each individual unit will satisfy the M&E rating and ...


Capacitor insulator reliability prediction using three-dimensional test chips for submicron DRAMS

ICMTS 92 Proceedings of the 1992 International Conference on Microelectronic Test Structures, 1992

Proposes a new method to predict the reliability of capacitors in any three- dimensional structure under any stress conditions, using test chips which have independently controlled three-dimensional structures. This method is a very promising tool for developing high-reliability capacitor insulators on three- dimensional electrodes in submicron dynamic RAMs (DRAMs). This method can be used to quantitatively compare insulator characteristics.<<ETX>>


Effect of Gate Insulator Thickness on RF Power Gain Degradation of Vertically Scaled GaN MIS-HEMTs at 40 GHz

IEEE Transactions on Device and Materials Reliability, 2015

We present an initial study of the RF reliability of SiN x/InAlN/AlN/GaN MIS- HEMTs with a molecular-beam epitaxy deposited SiN x gate insulator thickness varying from 0 (Schottky gate) to 6 nm. T-gate devices with 120 nm gate length were stressed under continuous-wave 40-GHz large-signal RF operation, biased in class AB with V<sub>DS</sub> = 20 V. Degradation in large-signal output ...


Mechanically reliable MEMS variable capacitor using single crystalline silicon (SCS) structure

The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05., 2005

In this paper, we firstly proposed a mechanically reliable parallel-plate type variable capacitor with a single crystalline silicon (SCS) supporting structure. The demonstrated variable capacitor was fabricated using an SiOG (silicon-on-glass) process, and both mechanical and electrical characteristics were measured. Total chip size was 1.05 mm/spl times/0.72 mm, and the pull-in voltage was measured to be 37 V. With and ...


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Educational Resources on Insulator Reliability

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IEEE-USA E-Books

  • Improving insulator reliability with insulating barriers

    When an insulating barrier is set up on an insulator with an inner electrode, suppression of negative surface leaderlike discharge and increase in AC flashover voltage are observed over a range of barrier distance (the distance between the HV electrode and the barrier) of <or approximately=15 mm (critical value). When the barrier distance is longer than the critical value, a punch- through breakdown of the insulator near the junction of the barrier and the insulating surface sometimes occurs. This punch-through breakdown voltage is much lower than the AC flashover voltage for the insulator without a barrier.<<ETX>>

  • Improvement of suspension insulator reliability by porcelain proof testing

    Modern overhead lines, particularly at EHV levels require suspension insulators of extremely high reliability. One of the most important properties required for suspension insulators is mechanical strength under tension. However, both the conventional M&E (Mechanical & Electrical) test (USASI 29.2 9.4.5)1)and the routine proof test (9.5.2) cannot give adequate assurance that each individual unit will satisfy the M&E rating and have a sufficient safety margin against the maximum working load. A new factory test, “hydraulic internal pressure test,” has been introduced to improve the strength reliability of suspension insulators.

  • Capacitor insulator reliability prediction using three-dimensional test chips for submicron DRAMS

    Proposes a new method to predict the reliability of capacitors in any three- dimensional structure under any stress conditions, using test chips which have independently controlled three-dimensional structures. This method is a very promising tool for developing high-reliability capacitor insulators on three- dimensional electrodes in submicron dynamic RAMs (DRAMs). This method can be used to quantitatively compare insulator characteristics.<<ETX>>

  • Effect of Gate Insulator Thickness on RF Power Gain Degradation of Vertically Scaled GaN MIS-HEMTs at 40 GHz

    We present an initial study of the RF reliability of SiN x/InAlN/AlN/GaN MIS- HEMTs with a molecular-beam epitaxy deposited SiN x gate insulator thickness varying from 0 (Schottky gate) to 6 nm. T-gate devices with 120 nm gate length were stressed under continuous-wave 40-GHz large-signal RF operation, biased in class AB with V<sub>DS</sub> = 20 V. Degradation in large-signal output power gain was observed to various degrees for all devices. For structures with a 3- or 6-nm gate insulator thickness, output power degraded by approximately 1 dB or less after 250 h of operation. A rapid decrease in output power was observed for structures with a 1-nm gate insulator or a Schottky gate, with a 1-dB decrease in output power within the first 10 h of operation. Degradation in output power was associated with a reduction in drain current, likely caused by hot-electron-related trapping as the drain current was fully recoverable after exposing the devices to UV light. Simulations show that as the gate insulator thickness is reduced, the peak lateral electric field in the channel increases, which would be consistent with an increase in hot-electron-related degradation.

  • Mechanically reliable MEMS variable capacitor using single crystalline silicon (SCS) structure

    In this paper, we firstly proposed a mechanically reliable parallel-plate type variable capacitor with a single crystalline silicon (SCS) supporting structure. The demonstrated variable capacitor was fabricated using an SiOG (silicon-on-glass) process, and both mechanical and electrical characteristics were measured. Total chip size was 1.05 mm/spl times/0.72 mm, and the pull-in voltage was measured to be 37 V. With and without the applied DC bias, the measured S/sub 11/ and S/sub 21/ were changed from -15.6 dB to -5.1 dB, and from -0.49 dB to -2.3 dB at 30 GHz, respectively. The measured capacitance at the up and the down state was 30 fF and 140 fF, respectively. Therefore, the capacitance ratio is calculated to be 4.67.

  • A bi-directional electrothermal electromagnetic actuator

    A bi-directional microactuator powered by the combination of electrothermal and electromagnetic forces is successfully demonstrated using both the Poly- MUMPs surface micromachining process and a 50 /spl mu/m SOI process. High output force has been measured from fabricated actuators in both DC and AC operations at non-resonant frequencies. Surface micromachined actuators can move several microns and exert more than 100 /spl mu/N of force, while the larger SOI actuators can move several tens of microns and exert more than 20 mN of force. Reliability tests show that the SOI and surface machined actuators have been in operation for more than 1 million and 100 million cycles, respectively, with no sign of degradation.

  • Investigation of Self-Heating Effect on Hot Carrier Degradation in Multiple-Fin SOI FinFETs

    In this letter, the impact of self-heating effect (SHE) on hot carrier degradation (HCD) in multiple-fin silicon-on-insulator (SOI) FinFETs was investigated. First, the ac conductance method has been utilized to extract the thermal resistance (Rth) of SOI FinFETs with different fin numbers. Then, both dc and ac stresses are applied on the gate and drain of transistors with the source grounded to characterize the HCD. It is found that the device with large fin number demonstrates high-temperature rise caused by SHE, which results in the enhanced generation of oxide bulk trapped charges. Thus, the SHE aggravates the HCD significantly. The influence of SHE on HCD is mitigated when the frequency of ac stress is above 10 MHz. Therefore, special attention to the SHE on HCD must be paid for accurate HCD prediction in FinFETs.

  • The influence of fluorinated SiNx gate insulator in a-InGaZnO thin film transistors

    We fabricated highly reliable amorphous In-Ga-Zn-O thin-film transistors (a-IGZO TFTs) with fluorinated silicon nitride (SiNx) as a gate insulator. The SiNxlayer was formed with utilizing SiF4/N2as source gases at a temperature as low as 150°C. We studied the influence of hydrogen and fluorine on the electrical characteristics.

  • A critical look at the performance advantages and limitations of 4H-SiC power UMOSFET structures

    A realistic performance projection of 4H-SiC UMOSFET structures based on electric field in the gate insulator consistent with long-term reliability of insulator is provided for the breakdown voltage in the range of 600 to 1500 V. The use of P/sup +/ polysilicon gate leads to higher breakdown voltage as the Fowler Nordheim injection from the gate electrode is reduced. It is concluded that the insulator reliability is the limiting factor and therefore the high temperature operation of these devices may not be practical.

  • Comprehensive understanding of hot carrier degradation in multiple-fin SOI FinFETs

    In this work, we comprehensively explore hot carrier degradation (HCD) in multiple-fin SOI FinFETs with both short channel length and long channel length, and demonstrate that the degradation mechanism in short channel device is different from that of long channel device. The hot carrier degradation in short channel length device under long stress time is dominated by oxide charge. Meanwhile, the hot carrier degradation is aggravated by self-heating effect (SHE).



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