Conferences related to Semiconductor device measurement

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2021 IEEE Photovoltaic Specialists Conference (PVSC)

Photovoltaic materials, devices, systems and related science and technology


2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe)

Energy conversion and conditioning technologies, power electronics, adjustable speed drives and their applications, power electronics for smarter grid, energy efficiency,technologies for sustainable energy systems, converters and power supplies


2020 IEEE 16th International Workshop on Advanced Motion Control (AMC)

AMC2020 is the 16th in a series of biennial international workshops on Advanced Motion Control which aims to bring together researchers from both academia and industry and to promote omnipresent motion control technologies and applications.


2020 IEEE 70th Electronic Components and Technology Conference (ECTC)

ECTC is the premier international conference sponsored by the IEEE Components, Packaging and Manufacturing Society. ECTC paper comprise a wide spectrum of topics, including 3D packaging, electronic components, materials, assembly, interconnections, device and system packaging, optoelectronics, reliability, and simulation.


2020 IEEE Applied Power Electronics Conference and Exposition (APEC)

APEC focuses on the practical and applied aspects of the power electronics business. Not just a power designer’s conference, APEC has something of interest for anyone involved in power electronics including:- Equipment OEMs that use power supplies and converters in their equipment- Designers of power supplies, dc-dc converters, motor drives, uninterruptable power supplies, inverters and any other power electronic circuits, equipments and systems- Manufacturers and suppliers of components and assemblies used in power electronics- Manufacturing, quality and test engineers involved with power electronics equipment- Marketing, sales and anyone involved in the business of power electronic- Compliance engineers testing and qualifying power electronics equipment or equipment that uses power electronics


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Periodicals related to Semiconductor device measurement

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Advanced Packaging, IEEE Transactions on

The IEEE Transactions on Advanced Packaging has its focus on the modeling, design, and analysis of advanced electronic, photonic, sensors, and MEMS packaging.


Automation Science and Engineering, IEEE Transactions on

The IEEE Transactions on Automation Sciences and Engineering (T-ASE) publishes fundamental papers on Automation, emphasizing scientific results that advance efficiency, quality, productivity, and reliability. T-ASE encourages interdisciplinary approaches from computer science, control systems, electrical engineering, mathematics, mechanical engineering, operations research, and other fields. We welcome results relevant to industries such as agriculture, biotechnology, healthcare, home automation, maintenance, manufacturing, pharmaceuticals, retail, ...


Biomedical Circuits and Systems, IEEE Transactions on

The Transactions on Biomedical Circuits and Systems addresses areas at the crossroads of Circuits and Systems and Life Sciences. The main emphasis is on microelectronic issues in a wide range of applications found in life sciences, physical sciences and engineering. The primary goal of the journal is to bridge the unique scientific and technical activities of the Circuits and Systems ...


Communications Magazine, IEEE

IEEE Communications Magazine was the number three most-cited journal in telecommunications and the number eighteen cited journal in electrical and electronics engineering in 2004, according to the annual Journal Citation Report (2004 edition) published by the Institute for Scientific Information. Read more at http://www.ieee.org/products/citations.html. This magazine covers all areas of communications such as lightwave telecommunications, high-speed data communications, personal communications ...


Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.


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Most published Xplore authors for Semiconductor device measurement

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Xplore Articles related to Semiconductor device measurement

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Yield model for 256K RAMs and beyond

1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1982

An updated yield model based on visual inspection, electrical tests, bit failure maps and failure analysis will be reported. The approach has been verified for the manufacture of 64K memories. It includes yield calculations for partially good product and redundancy and provides yield estimates for 128K and 256K chips.


An Integrated High Performance Mixed Signal IF-to-Digital Converter

ESSCIRC '96: Proceedings of the 22nd European Solid-State Circuits Conference, 1996

A single `chip' IF-to-Digital converter sub-system containing Low Noise Amplifiers, AGC, down-conversion mixers, oscillators, baseband amplifiers, references and an A/D converte is presented. Mixed analog-digital circuit design and packaging techniques achieve a high level of integration using standard semiconductor processes. Measured results show that the IC can operate on IF signals between 30MHz-85MHz and decode transmissions up to 64QAM either ...


Characterization of 1/f noise vs. number of gate stripes in MOS transistors

ISCAS'99. Proceedings of the 1999 IEEE International Symposium on Circuits and Systems VLSI (Cat. No.99CH36349), 1999

This paper examines low-frequency 1/f noise (or Bicker noise) in metal oxide semiconductor field-effect transistors (MOSFETs) versus number of gate stripes and bias conditions. Simulations using SPICE/Spectre with Cadence models have displayed the dependence of 1/f noise on the number of gate stripes and the bias conditions. Experimental results from a test chip designed and fabricated in a 0.5 /spl ...


Studies on the Possibilities of In-Line Die Attach Characterization of Semiconductor Devices

2007 9th Electronics Packaging Technology Conference, 2007

The qualification of the die attach of semiconductor devices is a very important element of predicting the reliability of the package, as the temperature of the chip is strongly affected by the quality of the die attach. This paper describes our latest findings on die attach quality testing of semiconductor devices using short term thermal transient measurements. Using estimates from ...


Burn-in effectiveness-theory and measurement

29th Annual Proceedings Reliability Physics 1991, 1991

Burn-in effectiveness is modeled as a function of time, temperature, electrical stress, stress coverage and failure mechanism. Actual field data for a variety of products is used to validate or deduce the relevant burn-in parameters. The modeling of burn-in is discussed to show the importance of the acceleration and stress coverage of the burn-in and of the failure distribution of ...


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Educational Resources on Semiconductor device measurement

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IEEE.tv Videos

Q&A Government Agencies Panel: 2016 International Conference on Rebooting Computing
Semiconductor Laser Development at Hisense Photonics - Yanfeng Lao - IPC 2018
Fairchild Semiconductor:
Envelope Time-Domain Characterizations to Assess In-Band Linearity Performances of Pre-Matched MASMOS Power Amplifier: RFIC Interactive Forum 2017
Overview of SDRJ - Yoshihiro Hayashi at INC 2019
2015 IEEE Honors: IEEE Jun-ichi Nishizawa Medal - Dimitri A. Antoniadis
Electronic Systems for Quantum Computation - David DiVincenzo: 2016 International Conference on Rebooting Computing
Prototyping & Feasibility of Palpitation Display Apparatus - Sakura Sikander - IEEE EMBS at NIH, 2019
The Era of AI Hardware - 2018 IEEE Industry Summit on the Future of Computing
IMS 2011 Microapps - A Comparison of Noise Parameter Measurement Techniques
IMS 2011 Microapps - Ultra Low Phase Noise Measurement Technique Using Innovative Optical Delay Lines
IMS 2011 Microapps - Waveguide Characteristics and Measurement Errors
IMS 2011 Microapps - Vector-Receiver Load Pull - Measurement Accuracy at its Best
IMS 2011 Microapps - Beyond the S-Parameter: The Benefits of Nonlinear Device Models
IMS 2012 Microapps - Passive Intermodulation (PIM) measurement using vector network analyzer Osamu Kusano, Agilent CTD-Kobe
Wireless Framework Development for Personalized Rehabilitation - Angad Jasuja - IEEE EMBS at NIH, 2019
Micrel Ripple Blocker
APEC 2012 - Dan Kinzer Plenary
ASC-2014 SQUIDs 50th Anniversary: 2 of 6 - John Clarke - The Ubiquitous SQUID
IMS 2011 Microapps - Advanced Terahertz Device Characterization

IEEE-USA E-Books

  • Yield model for 256K RAMs and beyond

    An updated yield model based on visual inspection, electrical tests, bit failure maps and failure analysis will be reported. The approach has been verified for the manufacture of 64K memories. It includes yield calculations for partially good product and redundancy and provides yield estimates for 128K and 256K chips.

  • An Integrated High Performance Mixed Signal IF-to-Digital Converter

    A single `chip' IF-to-Digital converter sub-system containing Low Noise Amplifiers, AGC, down-conversion mixers, oscillators, baseband amplifiers, references and an A/D converte is presented. Mixed analog-digital circuit design and packaging techniques achieve a high level of integration using standard semiconductor processes. Measured results show that the IC can operate on IF signals between 30MHz-85MHz and decode transmissions up to 64QAM either in NTSC or PAL systems. Key performance factors include 63dB stable gain, 50dB IMD3, 40dB AGC range, 9dB input Noise Figure and 40Msps A/D conversion rate.

  • Characterization of 1/f noise vs. number of gate stripes in MOS transistors

    This paper examines low-frequency 1/f noise (or Bicker noise) in metal oxide semiconductor field-effect transistors (MOSFETs) versus number of gate stripes and bias conditions. Simulations using SPICE/Spectre with Cadence models have displayed the dependence of 1/f noise on the number of gate stripes and the bias conditions. Experimental results from a test chip designed and fabricated in a 0.5 /spl mu/m CMOS process show that 1/f noise is independent of the number of gate stripes in both saturation and linear regions for both P-channel and N-channel devices. The measured results have also shown that 1/f noise is independent of the bias conditions in the saturation region but dependent on the bias conditions in the linear region.

  • Studies on the Possibilities of In-Line Die Attach Characterization of Semiconductor Devices

    The qualification of the die attach of semiconductor devices is a very important element of predicting the reliability of the package, as the temperature of the chip is strongly affected by the quality of the die attach. This paper describes our latest findings on die attach quality testing of semiconductor devices using short term thermal transient measurements. Using estimates from simulations as well as from measured structure functions of power transistors with known die attach quality we found that cca the first 100ms section of thermal transients is sufficient to draw conclusion on die attach quality. In case of in-line application of the short term thermal transient measurements however, there are different difficulties such as lack of time for K-factor calibration of the individual devices under test. In this paper we describe certain techniques which have been validated on large number of power LEDs with the aim of application in in line testing of die attach quality.

  • Burn-in effectiveness-theory and measurement

    Burn-in effectiveness is modeled as a function of time, temperature, electrical stress, stress coverage and failure mechanism. Actual field data for a variety of products is used to validate or deduce the relevant burn-in parameters. The modeling of burn-in is discussed to show the importance of the acceleration and stress coverage of the burn-in and of the failure distribution of the product. The modeling of burn-in is used to explain the failure characteristics of products which experience burn-in. The modeling of the characteristics of the failure distribution of burned-in product was used to analyze several experimental or reliability data sets to either validate or deduce the relevant parameter estimates for the specific burn-in. The modeling also extracts the relevant burn-in parameters from an analysis of field reliability performance.<<ETX>>

  • Modeling and optimization of wafer radial yield

    The semiconductor industry has known for a long time that wafer functional test yields tend to degrade with closer proximity of the wafer perimeter. As the general long-term industry trend continues toward larger wafer diameters, the productivity impact of a radial yield component becomes increasingly more significant. For example, the migration from 200 mm to 300 mm wafers will create approximately 60% more chips bordering the wafer perimeter, for an average 12 mm/spl times/12 mm chip size. Radial yield is a measurable function and is often characterized by many semiconductor manufacturers; however, most manufacturers neglect to carefully manage this component like other key productivity parameters. This paper describes some methods used at IBM Microelectronics' Vermont facility to characterize and optimize the radial yield loss component of the wafer final test yield. The strategies include tooling modifications and recipe changes, as well as wafer layout modifications. It has also been observed that product design content modulates the magnitude of the radial yield component. Two modeling techniques used to account for radial yield loss are discussed: one assumes the radial yield to contribute as a systematic limited yield; the other incorporates it into the random defect density model. This paper also contrasts the radial yield impacts and the productivity boundaries defined by the wafer exclusion ring.

  • Noise Characteristics and Modeling of Lubistor

    This chapter describes the noise characteristics of various SOI Lubistors with anode-offset regions. The static characteristics of these devices are modeled for the noise analysis; the model is composed of a series of a MOSFET and the pn junction. It is shown experimentally that the noise power of the devices is proportional to_I__A__n_(_n_> 0), where_I__A_is the anode current. Since the noise characteristics are not explained by conventional theory, a new model based of a phenomenological consideration is proposed. It is shown that the proposed basic model, which is compatible with the conventional Hooge model, can explain the experimental results. The influence of the anode-offset length is also discussed and modeled. [Reprinted with permission from S. Wakita and Y. Omura,_Journal of Applied Physics_, vol. 91, p. 2143, 2002. Copyright 2002, American Institute of Physics.]

  • CCD memory arrays with fast access by on-chip decoding

    None

  • A high-speed, low-power Hi-CMOS 4K static RAM

    None

  • The SPARCsystem-600 series microprocessors

    The author discusses developments related to the introduction of the 600MP series and the corresponding design challenges. Attention is given to the SPARC reference MMU, the write buffers, the application-specific ICs, the scan, the peripherals, and the manufacturing.<<ETX>>



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