Electron beam applications
196 resources related to Electron beam applications
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Technical presentations will range from the fundamental physics of electron emission and modulated electron beams to the design and operation of devices at UHF to THz frequencies, theory and computational tool development, active and passive components, systems, and supporting technologies.System developers will find that IVEC provides a unique snapshot of the current state-of-the-art in vacuum electron devices. These devices continue to provide unmatched power and performance for advanced electromagnetic systems, particularly in the challenging frequency regimes of millimeter-wave and THz electronics.Plenary talks will provide insights into the history, the broad spectrum of fundamental physics, the scientific issues, and the technological applications driving the current directions in vacuum electronics research.
IEEE International Conference on Plasma Science (ICOPS) is an annual conference coordinated by the Plasma Science and Application Committee (PSAC) of the IEEE Nuclear & Plasma Sciences Society.
INTERMAG is the premier conference on all aspects of applied magnetism and provides a range of oral and poster presentations, invited talks and symposia, a tutorial session, and exhibits reviewing the latest developments in magnetism.
All areas of ionizing radiation detection - detectors, signal processing, analysis of results, PET development, PET results, medical imaging using ionizing radiation
2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)
Ferroelectric materials and applications
The IEEE Aerospace and Electronic Systems Magazine publishes articles concerned with the various aspects of systems for space, air, ocean, or ground environments.
Experimental and theoretical advances in antennas including design and development, and in the propagation of electromagnetic waves including scattering, diffraction and interaction with continuous media; and applications pertinent to antennas and propagation, such as remote sensing, applied optics, and millimeter and submillimeter wave techniques.
Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission
IEEE Computer Graphics and Applications (CG&A) bridges the theory and practice of computer graphics. From specific algorithms to full system implementations, CG&A offers a strong combination of peer-reviewed feature articles and refereed departments, including news and product announcements. Special Applications sidebars relate research stories to commercial development. Cover stories focus on creative applications of the technology by an artist or ...
Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.
IEE Colloquium on High Energy Beam Processes for Industrial Applications, 1988
IEE Colloquium on Sub-Micron VLSI Reliability, 1992
The main evolutionary processing technology differences between a 1.0 micron DRAM and a 0.8 micron fast SRAM are described. With any new process, a learning curve is involved in perfecting the manufacturing parameters to produce the initial working, and subsequent qualified reliable product. During these development phases much emphasis is placed on the failure analysis of defective devices. The use ...
IEE Colloquium on High Energy Beam Processes for Industrial Applications, 1988
High energy beam technology is a term used to describe processes involving electron beams or lasers which can operate at high power densities, typically up to 10/sup 10/ KW/m/sup 2/, or for techniques using beams of ionised species with high kinetic energy, obtained by the application of a high accelerating voltage, generally up to 100 keV. Such processes are now ...
2012 Abstracts IEEE International Conference on Plasma Science, 2012
The results of experimental studies of the parameters (amplitude and duration) of a supershort avalanche electron beam (SAEB) generated in air at atmospheric pressure are presented. The performed studies of the SAEB current amplitude and pulse duration have shown that the optimization of the gap h between the wires and the rear wall of the wires cathode and a decrease ...
IVEC 2012, 2012
This paper presents the design of an eight beam electron gun using OPERA 3D code for pulsed amplifier. The electron gun has to deliver total current 560 (70×8) mA at voltage 6 kV. Each beam has a perveance of 0.15 μP making a total gun perveance of 1.2 μP corresponding to a total beam power of more than 3 kW. ...
ASC-2014 SQUIDs 50th Anniversary: 2 of 6 - John Clarke - The Ubiquitous SQUID
IEEE WEBINAR SERIES-March 5th, 2014: GaN Crushing Silicon...and Let Me Tell You How
IEEE Magnetics Distinguished Lecture - Mitsuteru Inoue
GaN Transistors -- Crushing Silicon in Wireless Energy Transfer
Transphorm: GaN Champions
AlGaN/GaN Plasmonic Terahertz Detectors
One HTS Josephson Junction, An Array of Applications: Has anything come from HTS devices in the last 30 years?
A 60GHz Packaged Switched Beam 32nm CMOS TRX with Broad Spatial Coverage, 17.1dBm Peak EIRP, 6.1dB NF at <250mW: RFIC Industry Showcase
The Josephson Effect: The Observations of Josephson's Effects
IMS 2014: Wideband mmWave Channels: Implications for Design and Implementation of Adaptive Beam Antennas
Maker Faire 2008: Light-Seeking Mouse Robots
"Towards Monolithic Quantum Computing Processors In Production FDSOI CMOS Technology"
2D Nanodevices - Paul Hurley at INC 2019
Superconducting RF Cavities and Future Particle Accelerators - Applied Superconductivity Conference 2018
Larson Collection interview with Melvin Calvin
Larson Collection interview with Rudolph Peierls
Brooklyn 5G Summit 2014: Channel Measurements Summary by Ted Rappaport
Unconventional Superconductivity: From History to Mystery
The main evolutionary processing technology differences between a 1.0 micron DRAM and a 0.8 micron fast SRAM are described. With any new process, a learning curve is involved in perfecting the manufacturing parameters to produce the initial working, and subsequent qualified reliable product. During these development phases much emphasis is placed on the failure analysis of defective devices. The use of multilayered interconnects on these micron/sub- micron devices has meant that specific failure analysis techniques have had to be developed to enable the localisation and identification of the process related defects. A number of analysis techniques and specialised equipment applications are described. These include (a) dielectric defect detection by emission microscopy; (b) anisotropic etching using a reactive ion etcher; (c) E-beam testing; (d) specific area cross-section using a focused ion beam. Examples of the failure mechanisms found during the introductory phase of the above DRAM and SRAM devices are described, together with the major early life failure mechanism.<<ETX>>
High energy beam technology is a term used to describe processes involving electron beams or lasers which can operate at high power densities, typically up to 10/sup 10/ KW/m/sup 2/, or for techniques using beams of ionised species with high kinetic energy, obtained by the application of a high accelerating voltage, generally up to 100 keV. Such processes are now widely accepted as practical alternatives for many industrial applications, and they can frequently be employed in unique situations for which no previous technique existed. The author introduces the main areas of application of high energy beam techniques, as well as presenting an outline of future areas for exploitation and the scope for further developments.<<ETX>>
The results of experimental studies of the parameters (amplitude and duration) of a supershort avalanche electron beam (SAEB) generated in air at atmospheric pressure are presented. The performed studies of the SAEB current amplitude and pulse duration have shown that the optimization of the gap h between the wires and the rear wall of the wires cathode and a decrease in the total cathode thickness allow an increase in the number of beam electrons behind the foil. The largest number of electrons that was detected behind the 10 μm thick Al foil at h ~1.5 mm was 6.2 × 1010, which corresponds to an SAEB amplitude of ~100 A at a triangle-pulse FWHM duration of 100 ps.
This paper presents the design of an eight beam electron gun using OPERA 3D code for pulsed amplifier. The electron gun has to deliver total current 560 (70×8) mA at voltage 6 kV. Each beam has a perveance of 0.15 μP making a total gun perveance of 1.2 μP corresponding to a total beam power of more than 3 kW. The cathode radius is 13.5 mm and individual emitter radius is 1.55 mm having current density 0.92 A/cm2. Focusing has been accomplished through solenoid. The beam pulsing can be accomplished through beam forming electrode relatively at lower negative potential at BFE with respect to cathode. This design has an added feature of cathode protection from ion bombardment with the application of additional ion barrier anode.
Summary form only given. It is well known that intense beams of energetic electrons are accelerated in z-pinches. Using magnetic deflection and Faraday cup detection we measured electron energies and the current of beams produced in conical wire array z-pinches and x-pinches. The variations in pointing and divergence of the beams reduced the accuracy of these measurements. However, the beam activity can be correlated with the x-ray emission of the z-pinches. We will present results of these measurements.
In this study we report on a development of electron optical systems including electron gun, focus system and depressed collector for sheet beam vacuum electron devices (VED). To support the requirement of the electron-wave interaction, we aim to produce a beam with current density of approximate 200A/cm<sup>2</sup> and an aspect ratio of 6:1. A PCM magnet stack is used for the focusing of the beam in the slow wave structure. A multistage depressed collector dedicated to sheet beam device is proposed, which is expected to aim a higher collector efficiency and better thermal distribution relative to conventional ones.
We here present a novel electron beam inspection technique for non-annealed high impedance poly-Si plugs. At this new method, interval time between each electron beam scan is varied to enhance the difference of surface voltage of normal plug, disconnected plug and SiO<sub>2</sub>. Based on experimental results using our experimental tool with the new interval scan technique, contrast between SiO<sub>2</sub> and poly-Si plug, between normal plug and disconnected plug have been dramatically enhanced.
A lens system has been developed to transform the circular beam from a conventional electron gun into a line-focus beam. The line-focus beam is uniform throughout its projected length on a phosphor screen.
In this paper, we have presented the simulation results on sheet beam electron gun and sheet beam transport in a uniform magnetic field. It is shown that the sheet beam with size 4.6 mm×0.4 mm, generated by the electron gun with 20 kV, 560 mA, can stably pass through the beam tunnel with transverse size 6 mm×1 mm and the length 120 mm in a uniform magnetic field.
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