Conferences related to Boron alloys

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2021 IEEE Photovoltaic Specialists Conference (PVSC)

Photovoltaic materials, devices, systems and related science and technology


2021 IEEE Pulsed Power Conference (PPC)

The Pulsed Power Conference is held on a biannual basis and serves as the principal forum forthe exchange of information on pulsed power technology and engineering.


2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2020 IEEE International Magnetic Conference (INTERMAG)

INTERMAG is the premier conference on all aspects of applied magnetism and provides a range of oral and poster presentations, invited talks and symposia, a tutorial session, and exhibits reviewing the latest developments in magnetism.


2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)

Ferroelectric materials and applications


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Periodicals related to Boron alloys

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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Industry Applications, IEEE Transactions on

The development and application of electric systems, apparatus, devices, and controls to the processes and equipment of industry and commerce; the promotion of safe, reliable, and economic installations; the encouragement of energy conservation; the creation of voluntary engineering standards and recommended practices.


Instrumentation and Measurement, IEEE Transactions on

Measurements and instrumentation utilizing electrical and electronic techniques.


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Most published Xplore authors for Boron alloys

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Xplore Articles related to Boron alloys

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IEE Colloquium on 'New Permanent Magnet Materials and their Applications' (Digest No.2)

IEE Colloquium on New Permanent Magnet Materials and their Applications, 1989

None


GaAs/(Ga,Al)As heterojunction bipolar transistors with buried oxygen-implanted isolation layers

IEEE Electron Device Letters, 1984

A simple self-aligned technique using oxygen implants to reduce the extrinsic base-collector capacitance in GaAs/(Ga,Al)As heterojunction bipolar transistors (HBT's) is described. This technique has been used to achieve nonthreshold logic ring-oscillators with propagation delays down to 30 ps per gate, the lowest reported to date for any bipolar transistor circuit.


Coupling effects in coptcrb thin film media

2000 IEEE International Magnetics Conference (INTERMAG), 2000

None


Iron-neodymium-boron magnets produced by melt-spin processing

IEE Colloquium on New Permanent Magnet Materials and their Applications, 1989

The author discusses developments in chill-block melt spinning of FeNdB magnets and the continuing search for methods by which anisotropy can be introduced in the ribbon either during the melt spinning or by a single subsequent processing step.<<ETX>>


A Mössbauer spectroscopy study of ultrafine particles of amorphous Fe<inf>37</inf>Ni<inf>28</inf>B<inf>34</inf>and Fe<inf>52</inf>Ni<inf>37</inf>B<inf>11</inf>

IEEE Transactions on Magnetics, 1987

Preparation of small alloy particles of Fe37Ni28B34and Fe52Ni37B11is achieved by reduction of the metal ions using KBH4in aqueous solution. Möss-bauer and X-ray diffraction studies show that the particles are amorphous. Mössbauer spectra obtained after annealing experiments indicate that the alloys are stable up to about 600 K.


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Educational Resources on Boron alloys

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IEEE-USA E-Books

  • IEE Colloquium on 'New Permanent Magnet Materials and their Applications' (Digest No.2)

    None

  • GaAs/(Ga,Al)As heterojunction bipolar transistors with buried oxygen-implanted isolation layers

    A simple self-aligned technique using oxygen implants to reduce the extrinsic base-collector capacitance in GaAs/(Ga,Al)As heterojunction bipolar transistors (HBT's) is described. This technique has been used to achieve nonthreshold logic ring-oscillators with propagation delays down to 30 ps per gate, the lowest reported to date for any bipolar transistor circuit.

  • Coupling effects in coptcrb thin film media

    None

  • Iron-neodymium-boron magnets produced by melt-spin processing

    The author discusses developments in chill-block melt spinning of FeNdB magnets and the continuing search for methods by which anisotropy can be introduced in the ribbon either during the melt spinning or by a single subsequent processing step.<<ETX>>

  • A Mössbauer spectroscopy study of ultrafine particles of amorphous Fe<inf>37</inf>Ni<inf>28</inf>B<inf>34</inf>and Fe<inf>52</inf>Ni<inf>37</inf>B<inf>11</inf>

    Preparation of small alloy particles of Fe37Ni28B34and Fe52Ni37B11is achieved by reduction of the metal ions using KBH4in aqueous solution. Möss-bauer and X-ray diffraction studies show that the particles are amorphous. Mössbauer spectra obtained after annealing experiments indicate that the alloys are stable up to about 600 K.

  • The Effect of Boron Implantation of the Sliding Wear and Contact Resistance of Palladium, 60Pd40Ag, and a CuNiSn Alloy

    A preliminary study was made of the effect of boron ion implantation on the adhesive and abrasive wear resistance of palladium, 60Pd40Ag, and a copper, nickel, tin alloy, CA725. In all cases the implantation was found to be beneficial, and this is believed due to the pronounced increase which implantation causes in the hardness of the implanted metals. The contact resistance of the palladium-containing materials was not significantly affected by the implan- tation.

  • Electronic densities of states of Silicon-Boron system

    In order to understand thermoelectric properties of Si-B alloys B/sub 3/Si or B/sub 4/Si, B/sub 6/Si, B/sub n/Si and /spl beta/-rhombohedral boron (/spl beta/-B), band-calculations have been attempted using a first-principle pseudopotential method. For P-B, partial occupancy of interstitial sites would be required to explain the generation of localized levels between the gap of the conduction band and valence band. Semiconducting nature of B/sub 3/Si (or B/sub 4/Si) could be predicted. B/sub 6/Si has definite DOS values at its Fermi level. The localization of the wavefunction by disordered arrangement of the atoms would play an essential role for its electronic properties.

  • Magnetic equivalent circuit of PM hysteresis synchronous motor

    This paper presents the magnetic equivalent circuit of a permanent magnet hysteresis synchronous motor (PMHS). The hybrid synchronous motor consists of 36% cobalt steel hysteresis alloys with neodymium iron boron permanent magnets to improve the overall performances of such a motor. Based on the magnetic equivalent circuit, the control strategy of the PMHS motor is developed. Experimental results confirm the validity of the proposed magnetic equivalent circuit model and show that the hybrid motor exhibits improved speed stability over a wide range.

  • Boron diffusion in Si<sub>1-x</sub>Ge<sub>x</sub> alloy layers

    The desire for higher carrier mobilities for thin-channel CMOS, such as fully- depleted SOI, has focused attention on the behavior of dopants in Si1-xGex materials. In this work, the diffusion of boron implanted at 0.5 keV was studied for 5 sec anneals between 800 to 1050°C for silicon (Cz and epitaxial) and Si1-xGex layers with Ge content of 7 and 25%. The implant dose of boron ions was 5 × 1014 ions/cm2. The epi-silicon and Si1-xGex layers were ∼200 nm thick so that the entire diffused profile was within the epitaxial layers. Strongly increased diffusion, compared to Cz- and epi-silicon, was found for boron atoms in layers with the Ge content of 7% and 25% for anneal temperatures above 900°C.

  • Impulse magnetization strategies for an external rotor brushless DC motor equipped with a multipole NdFeB magnet

    There are a number of stages during the manufacture of a brushless DC motor at which it may be possible to impulse magnetize the permanent magnets, namely: (i) component magnetization, of the magnet poles separately or of the complete multipole magnet; (ii) sub-assembly magnetization, of the assembled multipole rotor; and (iii) post-assembly magnetization, of the fully assembled motor. Here, the authors describe how, in order to aid the design optimisation of multipole magnetization systems, and eliminate fixture design by trial-and- error, an integrated CAD methodology has been developed. It involves a number of phases, the level of sophistication of the design/analysis tools increasing as the feasible design space contracts.<<ETX>>



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