Conferences related to Rf Integrated Circuits

Back to Top

2020 IEEE 70th Electronic Components and Technology Conference (ECTC)

ECTC is the premier international conference sponsored by the IEEE Components, Packaging and Manufacturing Society. ECTC paper comprise a wide spectrum of topics, including 3D packaging, electronic components, materials, assembly, interconnections, device and system packaging, optoelectronics, reliability, and simulation.


2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2020 IEEE International Solid- State Circuits Conference - (ISSCC)

ISSCC is the foremost global forum for solid-state circuits and systems-on-a-chip. The Conference offers 5 days of technical papers and educational events related to integrated circuits, including analog, digital, data converters, memory, RF, communications, imagers, medical and MEMS ICs.


2020 IEEE/MTT-S International Microwave Symposium (IMS)

The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2036 IEEE/MTT-S International Microwave Symposium - IMS 2036

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2031 IEEE/MTT-S International Microwave Symposium - IMS 2031

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2029 IEEE/MTT-S International Microwave Symposium - IMS 2029

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2026 IEEE/MTT-S International Microwave Symposium - IMS 2026

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2025 IEEE/MTT-S International Microwave Symposium - IMS 2025

    The IEEE International Microwave Symposium (IMS) is the world s foremost conferencecovering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies;encompassing everything from basic technologies to components to systems including thelatest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulationand more. The IMS includes technical and interactive sessions, exhibits, student competitions,panels, workshops, tutorials, and networking events.

  • 2024 IEEE/MTT-S International Microwave Symposium - IMS 2024

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2021 IEEE/MTT-S International Microwave Symposium - IMS 2021

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.

  • 2019 IEEE/MTT-S International Microwave Symposium - IMS 2019

    Comprehensive symposium on microwave theory and techniques including active and passive circuit components, theory and microwave systems.

  • 2018 IEEE/MTT-S International Microwave Symposium - IMS 2018

    Microwave theory and techniques, RF/microwave/millimeter-wave/terahertz circuit design and fabrication technology, radio/wireless communication.

  • 2017 IEEE/MTT-S International Microwave Symposium - IMS 2017

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.

  • 2016 IEEE/MTT-S International Microwave Symposium - IMS 2016

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2015 IEEE/MTT-S International Microwave Symposium - MTT 2015

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics. The IMS includes technical sessions, both oral and interactive, worksh

  • 2014 IEEE/MTT-S International Microwave Symposium - MTT 2014

    IMS2014 will cover developments in microwave technology from nano devices to system applications. Technical paper sessions, interactive forums, plenary and panel sessions, workshops, short courses, industrial exhibits, and a wide array of other technical activities will be offered.

  • 2013 IEEE/MTT-S International Microwave Symposium - MTT 2013

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter -wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2012 IEEE/MTT-S International Microwave Symposium - MTT 2012

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2011 IEEE/MTT-S International Microwave Symposium - MTT 2011

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2010 IEEE/MTT-S International Microwave Symposium - MTT 2010

    Reports of research and development at the state-of-the-art of the theory and techniques related to the technology and applications of devices, components, circuits, modules and systems in the RF, microwave, millimeter-wave, submillimeter-wave and Terahertz ranges of the electromagnetic spectrum.

  • 2009 IEEE/MTT-S International Microwave Symposium - MTT 2009

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2008 IEEE/MTT-S International Microwave Symposium - MTT 2008

  • 2007 IEEE/MTT-S International Microwave Symposium - MTT 2007

  • 2006 IEEE/MTT-S International Microwave Symposium - MTT 2006

  • 2005 IEEE/MTT-S International Microwave Symposium - MTT 2005

  • 2004 IEEE/MTT-S International Microwave Symposium - MTT 2004

  • 2003 IEEE/MTT-S International Microwave Symposium - MTT 2003

  • 2002 IEEE/MTT-S International Microwave Symposium - MTT 2002

  • 2001 IEEE/MTT-S International Microwave Symposium - MTT 2001

  • 2000 IEEE/MTT-S International Microwave Symposium - MTT 2000

  • 1999 IEEE/MTT-S International Microwave Symposium - MTT '99

  • 1998 IEEE/MTT-S International Microwave Symposium - MTT '98

  • 1997 IEEE/MTT-S International Microwave Symposium - MTT '97

  • 1996 IEEE/MTT-S International Microwave Symposium - MTT '96


IECON 2020 - 46th Annual Conference of the IEEE Industrial Electronics Society

IECON is focusing on industrial and manufacturing theory and applications of electronics, controls, communications, instrumentation and computational intelligence.


More Conferences

Periodicals related to Rf Integrated Circuits

Back to Top

Advanced Packaging, IEEE Transactions on

The IEEE Transactions on Advanced Packaging has its focus on the modeling, design, and analysis of advanced electronic, photonic, sensors, and MEMS packaging.


Antennas and Propagation, IEEE Transactions on

Experimental and theoretical advances in antennas including design and development, and in the propagation of electromagnetic waves including scattering, diffraction and interaction with continuous media; and applications pertinent to antennas and propagation, such as remote sensing, applied optics, and millimeter and submillimeter wave techniques.


Antennas and Wireless Propagation Letters, IEEE

IEEE Antennas and Wireless Propagation Letters (AWP Letters) will be devoted to the rapid electronic publication of short manuscripts in the technical areas of Antennas and Wireless Propagation.


Biomedical Circuits and Systems, IEEE Transactions on

The Transactions on Biomedical Circuits and Systems addresses areas at the crossroads of Circuits and Systems and Life Sciences. The main emphasis is on microelectronic issues in a wide range of applications found in life sciences, physical sciences and engineering. The primary goal of the journal is to bridge the unique scientific and technical activities of the Circuits and Systems ...


Circuits and Systems II: Express Briefs, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


More Periodicals

Most published Xplore authors for Rf Integrated Circuits

Back to Top

Xplore Articles related to Rf Integrated Circuits

Back to Top

Bit error rate measurement system for RF integrated circuits

2012 IEEE International Instrumentation and Measurement Technology Conference Proceedings, 2012

This paper proposes a bit error rate (BER) measurement system utilizing vector signal analyzer (VSA) instrument built-in analog digital converter (ADC) and ideal digital baseband receiver of VSA software for RF integrated circuits (RFICs) such as RF amplifier, RF mixer and RF receiver. Usually, BER performance is estimated in transceiver with built-in digital baseband circuits. In the past, RF designers ...


On-chip ESD protection designs with SCR-based devices in RF integrated circuits

2014 IEEE International Conference on Consumer Electronics - Taiwan, 2014

CMOS technology has been used to implement the radio-frequency (RF) integrated circuits for consumer electronics. However, the thinner gate oxide in nanoscale CMOS technology seriously degrades the electrostatic discharge (ESD) robustness. Therefore, on-chip ESD protection designs must be added at all input/output pads in CMOS chip. To minimize the impacts from ESD protection design on circuit performances, ESD protection at ...


Next-generation silicon analysis tools for RF integrated-circuits

IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006, 2006

This paper introduces new circuit analysis technology targeted to address the growing gap between what current circuit verification technology can deliver for today's analog and RF integrated circuit designs, compared to what is observed and measured in silicon. We present key powerful new techniques for the precise and fast analysis and verification of RF integrated circuits. We also provide an ...


A low-voltage design technique for RF integrated circuits

IEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing, 1998

We report an integrated RF circuit topology that can be used to realize low voltage (i.e., 1 V) RF integrated circuits. The scheme uses on-chip capacitively coupled resonating elements to DC isolate circuit elements that under the present art are connected in series and share a common DC current. The topology is applied to several commonly used RF integrated circuit ...


Electrostatic discharge (ESD) protection of RF integrated circuits

2012 IEEE Asia Pacific Conference on Circuits and Systems, 2012

Electrostatic discharge (ESD) induced failures continue to be a major reliability concern in the semiconductor industry. Such a concern will in fact be intensified as the CMOS technology is scaling toward the 22-nm and beyond. This paper covers the issues and challenges pertinent to the design of electrostatic discharge (ESD) protection solutions of CMOS-based RF integrated circuits.


More Xplore Articles

Educational Resources on Rf Integrated Circuits

Back to Top

IEEE.tv Videos

IEEE Custom Integrated Circuits Conference
IMS 2011 Microapps - Memory Effects in RF Circuits: Definition, Manifestations and Fast, Accurate Simulation
Multi-Level Optical Weights in Integrated Circuits - IEEE Rebooting Computing 2017
Analog Devices SP4T RF MEMS Switch with Integrated Driver Circuitry for RF Instrumentation: MicroApps 2015 - Analog Devices
Voltage Metrology with Superconductive Electronics
Brooklyn 5G Summit: Going the Distance with CMOs: mm-Waves and Beyond
Education for Analog ICs
IEEE Photonics Conference 2017 Recap
Micro-Apps 2013: Integrated Electro-Thermal Design of a SiGe PA
A Sub-mmW All-Passive Front-end with Implicit Capacitive Stacking - Vijaya K. Purushothaman - RFIC 2019 Showcase
ASC-2014 SQUIDs 50th Anniversary: 1 of 6 Arnold Silver
Multi-Level Optimization for Large Fan-In Optical Logic Circuits - Takumi Egawa - ICRC 2018
IMS 2014:Active 600GHz Frequency Multiplier-by-Six S-MMICs for Submillimeter-Wave Generation
R. Jacob Baker - SSCS Chip Chat Podcast, Episode 4
A 4mW-RX 7mW-TX IEEE 802.11ah Fully-Integrated RF Transceiver: RFIC Industry Showcase 2017
Interview with Takao Nishitani - IEEE Donald O. Pederson Award in Solid-State Circuits Co-Recipient 2017
Prototyping MIMO Systems with the AD9361: MicroApps 2015 - Analog Devices
2011 IEEE Medal of Honor: Morris Chang
Single Crystal AlGaN Bulk Acoustic Wave Resonators on Silicon Substrates with High Electromechanical Coupling: RFIC Industry Showcase
A 28GHz CMOS Direct Conversion Transceiver with Packaged Antenna Arrays for 5G Cellular Systems: RFIC Industry Showcase 2017

IEEE-USA E-Books

  • Bit error rate measurement system for RF integrated circuits

    This paper proposes a bit error rate (BER) measurement system utilizing vector signal analyzer (VSA) instrument built-in analog digital converter (ADC) and ideal digital baseband receiver of VSA software for RF integrated circuits (RFICs) such as RF amplifier, RF mixer and RF receiver. Usually, BER performance is estimated in transceiver with built-in digital baseband circuits. In the past, RF designers could not estimate RFICs effect to BER test without digital baseband circuits and vice versa for digital baseband designers. It is helpful to understand RFICs without digital baseband circuits to BER test can reduce certain risk before integrating RFICs with digital baseband circuits. Therefore, an implementation of output signal to noise ratio (SNR) calibration in a specified bandwidth and measurement method combined VSA instrument, VSA software and Advanced Design System (ADS) is used for BER measurement.

  • On-chip ESD protection designs with SCR-based devices in RF integrated circuits

    CMOS technology has been used to implement the radio-frequency (RF) integrated circuits for consumer electronics. However, the thinner gate oxide in nanoscale CMOS technology seriously degrades the electrostatic discharge (ESD) robustness. Therefore, on-chip ESD protection designs must be added at all input/output pads in CMOS chip. To minimize the impacts from ESD protection design on circuit performances, ESD protection at input/output pads must be carefully designed. A review on ESD protection designs with silicon-controlled rectifier (SCR) devices in RF integrated circuits is presented in this paper.

  • Next-generation silicon analysis tools for RF integrated-circuits

    This paper introduces new circuit analysis technology targeted to address the growing gap between what current circuit verification technology can deliver for today's analog and RF integrated circuit designs, compared to what is observed and measured in silicon. We present key powerful new techniques for the precise and fast analysis and verification of RF integrated circuits. We also provide an overview of the key innovations in applied mathematics, numerical techniques, and software architecture that allow high speed and precision to be delivered together in circuit analysis. These techniques, taken together, comprise precision circuit analysis technology- targeted to address the growing verification problems found in the majority of today's commercial analog/RF-rich integrated circuits. We demonstrate the application of this technology on commercially shipping designs in wireless, networking, and SoC applications

  • A low-voltage design technique for RF integrated circuits

    We report an integrated RF circuit topology that can be used to realize low voltage (i.e., 1 V) RF integrated circuits. The scheme uses on-chip capacitively coupled resonating elements to DC isolate circuit elements that under the present art are connected in series and share a common DC current. The topology is applied to several commonly used RF integrated circuit topologies (i.e., low-noise amplifiers and mixers). A comparison is made between a low-voltage version of a cascode amplifier and the classic cascode amplifier. The low-voltage version (i.e., 1 V) is shown to have a similar distortion specification as the classic 2 V low-noise cascode amplifier. The low-voltage version has a 0.22 dB improvement in noise figure.

  • Electrostatic discharge (ESD) protection of RF integrated circuits

    Electrostatic discharge (ESD) induced failures continue to be a major reliability concern in the semiconductor industry. Such a concern will in fact be intensified as the CMOS technology is scaling toward the 22-nm and beyond. This paper covers the issues and challenges pertinent to the design of electrostatic discharge (ESD) protection solutions of CMOS-based RF integrated circuits.

  • Design and simulation of active spiral inductors for RF integrated circuits

    A numerical simulation scheme is presented for the design of miniaturized inductors and transformers compatible with a silicon-based standard bipolar process for RF integrated circuits. A combination of FDTD method and SPICE simulator has been used for the feasibility study of high Q integrated active coils.

  • Parasitic-aware design and optimization of CMOS RF integrated circuits

    The need for higher integration and lower cost personal communication systems (PCS) has motivated extensive efforts to develop CMOS RF integrated circuits which meet the performance requirements of current and future standards such as IS-95, GSM, DECT, etc. However, power losses associated with on-chip inductor, device, and package parasitics have impeded the full integration of power-efficient CMOS RF ICs. In this paper, we describe a custom CAD synthesis and optimization tool which enables RF chip/package design for optimum circuit performance. A fully-integrated CMOS power amplifier (PA) illustrates the efficacy of this approach.

  • Reduction of crosstalk noise between interconnect lines in CMOS RF integrated circuits

    We have numerically investigated crosstalk noise between interconnect lines in CMOS RF integrated circuits. Immersed microstrip line (IMSL) and immersed coplanar waveguide (ICPW) over Si substrate were analyzed to make clear shielding effect of grounded planes to reduce crosstalk noise between parallel interconnect lines. It was shown that the crosstalk between the interconnect lines were extensively reduced by the use of IMSLs or ICPWs, compared with simple lines. However, in layout designs using ICPWs, we need consideration about the transmission loss due to the electromagnetic coupling with the lossy Si substrate. On the other hand, for IMSL configurations, the transmission loss due to the Si substrate is small, because the ground plane shields the signal line from the electromagnetic coupling with the Si substrate.

  • Parasitic-aware design and optimization of CMOS RF integrated circuits

    The need for higher integration and lower cost personal communication systems (PCS) has motivated extensive efforts to develop CMOS RF integrated circuits which meet the performance requirements of current and future standards such as IS-95, GSM, DECT, etc. However, power losses associated with on-chip inductor, device, and package parasitics have impeded the full integration of power-efficient CMOS RF ICs. In this paper, we describe a custom CAD synthesis and optimization tool which enables RF chip/package design for optimum circuit performance. A fully-integrated CMOS power amplifier (PA) illustrates the efficacy of this approach.

  • A low voltage design technique for low noise RF integrated circuits

    Analysis and optimization of the bias conditions and noise parameters of MOS devices are presented. A design technique based on a narrowband LC-folded cascode topology is proposed for low voltage RF integrated circuits. The technique is applied to the design of a 1 V LNA operating at 1.9 GHz using a 0.5 /spl mu/m CMOS technology. Simulation results show that the LNA provide a noise figure of 1.7 dB, gain of 10 dB, and is well matched at the input. The LNA also provides a minimum noise figure of 1.6 dB.



Standards related to Rf Integrated Circuits

Back to Top

No standards are currently tagged "Rf Integrated Circuits"


Jobs related to Rf Integrated Circuits

Back to Top