Conferences related to Negative Bias Temperature Instability

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2020 57th ACM/ESDA/IEEE Design Automation Conference (DAC)

The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2022 59th ACM/ESDA/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2021 58th ACM/ESDA/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2019 56th ACM/ESDA/IEEE Design Automation Conference (DAC)

    EDA (Electronics Design Automation) is becoming ever more important with the continuous scaling of semiconductor devices and the growing complexities of their use in circuits and systems. Demands for lower-power, higher-reliability and more agile electronic systems raise new challenges to both design and design automation of such systems. For the past five decades, the primary focus of research track at DAC has been to showcase leading-edge research and practice in tools and methodologies for the design of circuits and systems.

  • 2018 55th ACM/ESDA/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2017 54th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2016 53nd ACM/EDAC/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2015 52nd ACM/EDAC/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2014 51st ACM/EDAC/IEEE Design Automation Conference (DAC)

    DAC Description for TMRF The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading

  • 2013 50th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 session on design methodologies and EDA tool developments, keynotes, panels, plus User Track presentations. A diverse worldwide community representing more than 1,000 organization attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2012 49th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The Design Automation Conference (DAC) is the premier event for the design of electronic circuits and systems, and for EDA and silicon solutions. DAC features a wide array of technical presentations plus over 200 of the leading electronics design suppliers

  • 2011 48th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The Design Automation Conference is the world s leading technical conference and tradeshow on electronic design and design automation. DAC is where the IC Design and EDA ecosystem learns, networks, and does business.

  • 2010 47th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The Design Automation Conference (DAC) is the premier event for the design of electronic circuits and systems, and for EDA and silicon solutions. DAC features a wide array of technical presentations plus over 200 of the leading electronics design suppliers.

  • 2009 46th ACM/EDAC/IEEE Design Automation Conference (DAC)

    DAC is the premier event for the electronic design community. DAC offers the industry s most prestigious technical conference in combination with the biggest exhibition, bringing together design, design automation and manufacturing market influencers.

  • 2008 45th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The Design Automation Conference (DAC) is the premier event for the design of electronic circuits and systems, and for EDA and silicon solutions. DAC features a wide array of technical presentations plus over 250 of the leading electronics design suppliers.

  • 2007 44th ACM/IEEE Design Automation Conference (DAC)

    The Design Automation Conference (DAC) is the premier Electronic Design Automation (EDA) and silicon solution event. DAC features over 50 technical sessions covering the latest in design methodologies and EDA tool developments and an Exhibition and Demo Suite area with over 250 of the leading EDA, silicon and IP Providers.

  • 2006 43rd ACM/IEEE Design Automation Conference (DAC)

  • 2005 42nd ACM/IEEE Design Automation Conference (DAC)

  • 2004 41st ACM/IEEE Design Automation Conference (DAC)

  • 2003 40th ACM/IEEE Design Automation Conference (DAC)

  • 2002 39th ACM/IEEE Design Automation Conference (DAC)

  • 2001 38th ACM/IEEE Design Automation Conference (DAC)

  • 2000 37th ACM/IEEE Design Automation Conference (DAC)

  • 1999 36th ACM/IEEE Design Automation Conference (DAC)

  • 1998 35th ACM/IEEE Design Automation Conference (DAC)

  • 1997 34th ACM/IEEE Design Automation Conference (DAC)

  • 1996 33rd ACM/IEEE Design Automation Conference (DAC)


2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2020 IEEE International Reliability Physics Symposium (IRPS)

Meeting of academia and research professionals to discuss reliability challenges


2020 IEEE International Symposium on Circuits and Systems (ISCAS)

The International Symposium on Circuits and Systems (ISCAS) is the flagship conference of the IEEE Circuits and Systems (CAS) Society and the world’s premier networking and exchange forum for researchers in the highly active fields of theory, design and implementation of circuits and systems. ISCAS2020 focuses on the deployment of CASS knowledge towards Society Grand Challenges and highlights the strong foundation in methodology and the integration of multidisciplinary approaches which are the distinctive features of CAS contributions. The worldwide CAS community is exploiting such CASS knowledge to change the way in which devices and circuits are understood, optimized, and leveraged in a variety of systems and applications.


2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)

The fifth joint EUROSOI-ULIS event will be hosted by IMEP-LaHC in Grenoble, France. The focus of the sessions is on advanced nanoscale devices, including SOI technology.Papers in the following areas are solicited:-Physical mechanisms and innovative SOI-like devices.-New channel materials for CMOS: strained Si, strained SOI, SiGe, GeOI, III-V and high mobility materials on insulator; carbon nanotubes; graphene and other two-dimensional materials.-Nanometer scale devices: technology, characterization techniques and evaluation metrics for high performance, low power, low standby power, high frequency and memory applications.-New functionalities in silicon-compatible nanostructures and innovative devices representing the More than Moore domain nanoelectronic sensors, biosensor devices, energy harvesting devices, RF devices, imagers, etc. Advanced test structures and characterization techniques, reliability and variability assessment techniques for new materials and novel devices.

  • 2018 Joint International EUROSOI Workshop andInternational Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)

    The fourth joint EUROSOI-ULIS event will be hosted by the University of Granada in Granada, Spain. The focus of the sessions is on advanced nanoscale devices, including SOI technology. Papers in the following areas are solicited:Physical mechanisms and innovative SOI-like devices.New channel materials for CMOS: strained Si, strained SOI, SiGe, GeOI, III-V and high mobility materials on insulator; carbon nanotubes; graphene and other two-dimensional materials.Nanometer scale devices: technology, characterization techniques and evaluation metrics for high performance, low power, low standby power, high frequency and memory applications.New functionalities in silicon-compatible nanostructures and innovative devices representing the More than Moore domain nanoelectronic sensors, biosensor devices, energy harvesting devices, RF devices, imagers, etc.

  • 2017 Joint International EUROSOI Workshop andInternational Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)

    EUROSOI-ULIS is a European Conference that resulted from the merging in 2015 of the two sister Conferences: EUROSOI and ULIS. The aim of the EUROSOI-ULIS Conference is to provide an open forum for the presentation and discussion of recent research in technology, physics, modeling, simulation and characterization of advanced nanoscale semiconductor-on-insulator and silicon-compatible devices. Papers related to the More Moore, More than Moore and Beyond CMOS research fields (alternative semiconductor and dielectric materials, innovative devices, circuit and system design, etc) are highly encouraged.

  • 2016 Joint International EUROSOI Workshop andInternational Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)

    In order to further increase audience and scientific impact, the two sister conferences ULIS and EUROSOI have decided to merge in 2015 and the first joint EUROSOI-ULIS event was a sucess. The aim of the EUROSOI-ULIS Conference is to provide an open forum for the presentation and discussion of recent research in technology, physics, modeling, simulation and characterization of advanced nanoscale semiconductor-on-insulator and silicon-compatible devices. Papers corresponding to the More Moore, More than Moore and Beyond CMOS domains (alternative semiconductor and dielectric materials, innovative devices, circuit and system design, etc) are highly encouraged.

  • 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)

    The future landscape of the micro-nano-electronics will essentially contain extremely miniaturized fully depleted devices such as planar SOI or narrow FinFETs and nanowires. These aspects were covered in both ULIS and EuroSOI conferences, leading to significant overlap. In order to further increase audience and scientific impact, the two sister conferences have decided to merge in 2015. The aim of the EUROSOI-ULIS Conference is to provide an open forum for the presentation and discussion of recent research in technology, physics, modeling, simulation and characterization of advanced nanoscale semiconductor-on-insulator and silicon-compatible devices. Papers corresponding to the More Moore, More than Moore and Beyond CMOS domains (alternative semiconductor and dielectric materials, innovative devices, circuit and system design, etc) are highly encouraged.

  • 2014 15th International Conference on Ultimate Integration on Silicon (ULIS)

    The aim of the ULIS Conference is to provide an open forum for the presentation and discussion of recent research in technology, physics, modelling, simulation and characterisation of advanced nanoscale silicon and silicon compatible devices for More Moore (CMOS, Memories), More than Moore (Nanosensing, Energy Harvesting, RF, ...) and Beyond-CMOS (Nanowires, CNT, Graphene, Tunnel FET, ...) applications.

  • 2013 14th International Conference on Ultimate Integration on Silicon (ULIS)

    The aim of the ULIS Conference is to provide an open forum for the presentation and discussion of recent research in technology, physics, modelling, simulation and characterisation of advanced nanoscale silicon and silicon compatible devices in the More Moore, More than Moore and Beyond CMOS domains.

  • 2012 13th International Conference on Ultimate Integration on Silicon (ULIS)

    The aim of the ULIS Conference is to provide an open forum for the presentation and discussion of recent research in technology, physics, modelling, simulation and characterisation of advanced nanoscale silicon and silicon compatible devices in the More Moore, More than Moore and Beyond CMOS domains.

  • 2011 12th International Conference on Ultimate Integration on Silicon (ULIS)

    ULIS is an annual conference that regroups the European research community working on advanced silicon devices and nanodevices. It has been held annually since 2000. The aim of the ULIS Conference is to provide an open forum for the presentation and discussion of recent research in technology, physics, modelling, simulation and characterisation of advanced nanoscale silicon and silicon compatible devices in the More Moore, More than Moore and Beyond CMOS domains.

  • 2009 10th International Conference on Ultimate Integration on Silicon (ULIS)

    The aim of the ULIS Conference is to provide an open forum for the presentation and discussion of recent research in technology, physics, modeling, simulation and characterization of advanced nanoscale silicon and silicon compatible devices in the More Moore, More than Moore and Beyond CMOS domains.

  • 2008 9th International Conference on Ultimate Integration on Silicon (ULIS)

    The aim of the ULIS Conference is to provide an open forum for the presentation and discussion of recent research in technology, physics, modeling, simulation and characterization of advanced nanoscale silicon and silicon compatible devices for switches, memory and novel applications such as sensors and bioelectronics.


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Periodicals related to Negative Bias Temperature Instability

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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Circuits and Systems II: Express Briefs, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.


Computers, IEEE Transactions on

Design and analysis of algorithms, computer systems, and digital networks; methods for specifying, measuring, and modeling the performance of computers and computer systems; design of computer components, such as arithmetic units, data storage devices, and interface devices; design of reliable and testable digital devices and systems; computer networks and distributed computer systems; new computer organizations and architectures; applications of VLSI ...


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


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Most published Xplore authors for Negative Bias Temperature Instability

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Xplore Articles related to Negative Bias Temperature Instability

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Characteristics and Fluctuation of Negative Bias Temperature Instability in Si Nanowire Field-Effect Transistors

IEEE Electron Device Letters, 2008

In this letter, negative bias temperature instability (NBTI) in silicon nanowire field-effect transistors (SNWFETs) is investigated and found to exhibit some new characteristics that are probably due to the structural nature of nanowires. In long-channel SNWFETs, a fast degradation and a quick saturation of NBTI are observed and discussed. In short-channel SNWFETs, a large fluctuation of NBTI is observed, which ...


Anomalous Negative Bias Temperature Instability Degradation Induced by Source/Drain Bias in Nanoscale PMOS Devices

IEEE Transactions on Nanotechnology, 2008

The effect of source/drain (S/D) bias on the negative bias temperature instability (NBTI) of pMOSFETs is studied. The anomalously enhanced NBTI under S/D bias conditions is observed, which cannot be explained by the conventional reaction-diffusion model. A new mechanism based on the enhanced interfacial dissociation of equivSi-H bonds induced by the energetic holes (the hole energy E<sub>h</sub> is higher than ...


Correlations between plasma induced damage and negative bias temperature instability in 65 nm bulk and thin-BOX FDSOI processes

2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2016

We evaluate Plasma Induced Damage (PID) and Negative Bias Temperature Instability (NBTI) by measuring frequency of Ring Oscillators (ROs). Initial frequency degradation by PID from Antenna Ratio (AR) of 500 to 1k are 2.1% and 1.9% in the bulk and thin-BOX FDSOI, respectively. NBTI is accelerated by PID in less than 500 AR which is the upper limit of the ...


Effect of gate length on Negative Bias Temperature Instability of 32nm advanced technology HKMG PMOSFET

2016 IEEE International Conference on Semiconductor Electronics (ICSE), 2016

Negative Bias Temperature Instability (NBTI) has become a key reliability concern in semiconductor industries as devices are scaled down. A simulation study had been done on 32 nm technology node PMOS using Synopsys TCAD Sentaurus simulator tool. This paper presents the effect of gate length on NBTI of 32 nm advanced technology high-k metal gate (HKMG) PMOSFET. The effect on ...


Defects for random telegraph noise and negative bias temperature instability

2016 China Semiconductor Technology International Conference (CSTIC), 2016

Random Telegraphy Noise (RTN) and Negative Bias Temperature Instability (NBTI) are two important sources of device instability. Their relation is not fully understood and is investigated in this work. We examine the similarity and differences of the defects responsible for them. By following the As-grown- Generation (AG) model proposed by our group, we present clear evidences that the As-grown hole ...


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Educational Resources on Negative Bias Temperature Instability

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IEEE-USA E-Books

  • Characteristics and Fluctuation of Negative Bias Temperature Instability in Si Nanowire Field-Effect Transistors

    In this letter, negative bias temperature instability (NBTI) in silicon nanowire field-effect transistors (SNWFETs) is investigated and found to exhibit some new characteristics that are probably due to the structural nature of nanowires. In long-channel SNWFETs, a fast degradation and a quick saturation of NBTI are observed and discussed. In short-channel SNWFETs, a large fluctuation of NBTI is observed, which mainly originates from the ultrasmall gate areas of the short-channel SNWFETs and the statistical nature of randomly trapped charges in the oxide and at the Si/SiO<sub>2</sub> interface. Techniques to suppress the fluctuation and characterize the intrinsic NBTI in ultrasmall SNWFETs are proposed and discussed. A recently developed online gate current method is demonstrated, which effectively alleviates this NBTI fluctuation in SNWFETs.

  • Anomalous Negative Bias Temperature Instability Degradation Induced by Source/Drain Bias in Nanoscale PMOS Devices

    The effect of source/drain (S/D) bias on the negative bias temperature instability (NBTI) of pMOSFETs is studied. The anomalously enhanced NBTI under S/D bias conditions is observed, which cannot be explained by the conventional reaction-diffusion model. A new mechanism based on the enhanced interfacial dissociation of equivSi-H bonds induced by the energetic holes (the hole energy E<sub>h</sub> is higher than the reaction activation energy E<sub>a</sub> of equivSi-H bond dissociation) is proposed to address the observed degradation behaviors. Monte Carlo simulations are used to identify the validity of the new mechanism.

  • Correlations between plasma induced damage and negative bias temperature instability in 65 nm bulk and thin-BOX FDSOI processes

    We evaluate Plasma Induced Damage (PID) and Negative Bias Temperature Instability (NBTI) by measuring frequency of Ring Oscillators (ROs). Initial frequency degradation by PID from Antenna Ratio (AR) of 500 to 1k are 2.1% and 1.9% in the bulk and thin-BOX FDSOI, respectively. NBTI is accelerated by PID in less than 500 AR which is the upper limit of the antenna rule. NBTI correlates with PID and also with initial frequency. The correlation coefficient (CC) between NBTI-induced degradations and the initial frequency is 0.68 in FDSOI, while there is few correlation in bulk (CC = 0.24) because random dopant fluctuation is dominant.

  • Effect of gate length on Negative Bias Temperature Instability of 32nm advanced technology HKMG PMOSFET

    Negative Bias Temperature Instability (NBTI) has become a key reliability concern in semiconductor industries as devices are scaled down. A simulation study had been done on 32 nm technology node PMOS using Synopsys TCAD Sentaurus simulator tool. This paper presents the effect of gate length on NBTI of 32 nm advanced technology high-k metal gate (HKMG) PMOSFET. The effect on the device parameters such as threshold voltage (V<sub>th</sub>), drain current (I<sub>d</sub>) and the lifetime of the device had been studied and discussed in detail. It is found that NBTI is not highly dependent on gate length at low oxide field (E<sub>ox</sub>) while at higher E<sub>ox</sub>, longer gate length is shown to significantly affect the Vth degradation where Vth degradation in longer gate length is found to be lowered by 23.39% compared to the shorter.

  • Defects for random telegraph noise and negative bias temperature instability

    Random Telegraphy Noise (RTN) and Negative Bias Temperature Instability (NBTI) are two important sources of device instability. Their relation is not fully understood and is investigated in this work. We examine the similarity and differences of the defects responsible for them. By following the As-grown- Generation (AG) model proposed by our group, we present clear evidences that the As-grown hole traps (AHTs) are responsible for the RTN of pMOSFETs. AHTs also dominate NBTI initially, but the generated defects (GDs) become increasingly important for NBTI as stress time increases. The GDs, however, do not cause RTN.

  • Degradation caused by Negative Bias temperature instability depending on Body Bias on NMOS or PMOS in 65 nm bulk and thin-BOX FDSOI processes

    Reverse Body Bias (RBB) control on Fully Depleted Silicon On Insulator (FDSOI) with thin Buried OXide (BOX) layer mitigates power consumption on the standby mode. However, Degradation caused by Negative Bias Temperature Instability (NBTI) is changed by RBB. We measure aging degradation of ring oscillators by applying RBB to NMOS or PMOS. In bulk, RBB to PMOS suppresses NBTI-induced degradation because increasing threshold voltage reduces carriers in channel. However, RBB to NMOS does not suppress NBTI-induced degradation because Positive BTI (PBTI) is not dominant in NMOS. In FDSOI, RBB to not only PMOS but also NMOS suppresses NBTI-induced degradation because BOX layer intercepts carriers to flow to substrate.

  • Acceptor-like trap effect on negative-bias temperature instability (NBTI) of SiGe pMOSFETs on SRB

    In this work, the oxide electric field (Eox) reduction caused by negatively charged traps is proposed to explain the robustness of SiGe pMOSFETs to negative gate bias temperature instability (NBTI) stress. The high density of negatively charged acceptor-like traps close to the SiGe valance band (E<sub>v</sub>) lowers the E<sub>ox</sub> and reduces the NBTI degradation at fixed overdrive. We demonstrate that trap engineering can be exploited to meet aggressive reliability requirements. Furthermore, it is predicted that there are no reliability issues in the SiGe pMOSFETs comparing with the Si counterparts.

  • Plasma Damage-Enhanced Negative Bias Temperature Instability in Low-Temperature Polycrystalline Silicon Thin-Film Transistors

    In this letter, a mechanism that will make negative bias temperature instability (NBTI) be accelerated by plasma damage in low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs) is presented. The experimental results confirm that the mechanism, traditionally found in the thin gate-oxide devices, does exist also in LTPS TFTs. That is, when performing the NBTI measurement, the LTPS TFTs with a larger antenna ratio will have a higher degree in degradation of the threshold voltage, effective mobility, and drive current under NBTI stress. By extracting the related device parameters, it was demonstrated that the enhancement is mainly attributed to the plasma-damage-modulated creating of interfacial states, grain boundary trap states, and fixed oxide charges. It could be concluded that plasma damage will speed up the NBTI and should be avoided for the LTPS TFT circuitry design

  • Analysis of Negative Bias Temperature Instability in Body-Tied Low-Temperature Polycrystalline Silicon Thin-Film Transistors

    Negative bias temperature instability (NBTI) degradation mechanism in body- tied low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs) is analyzed by the charge-pumping (CP) technique. The properties of bulk trap states (including interface and grain boundary trap states) are directly characterized from the CP current. The increase of the fixed oxide charges is also extracted, which has not been quantified in previous studies of NBTI degradation in LTPS TFTs. The experimental results confirm that the NBTI degradation in LTPS TFTs is caused by the generation of bulk trap states and oxide trap states.

  • Modeling effect of Negative Bias Temperature Instability on potential distribution and degradation of double-gate MOSFETs

    In this work, the effect of negative bias temperature instability (NBTI) on the potential distribution and degradation of floating-body (FB) undoped double-gate (DG) MOSFETs is modeled. The approach is based on solving the one- dimensional (1-D) Poisson's equation considering the NBTI effect in the inversion region. The study includes different stress voltages and device body thicknesses. The accuracy of the model is verified by the finite difference method (FDM). The results of the model are in very good agreement with those of the numerical method. These results show that in FB devices, the accumulation of the NBTI stress generated electrons in the device body reduces the body potential and oxide field and as a result decrease the generation of interface traps and degradation of device compared to the case that these electrons did not exist. In addition, the results show that because of larger volume density of generated electrons in devices with thinner bodies, the reduction of the oxide field is larger which lead to a decrease in generation of interface traps in them.



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