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TLU Dependency on PowerPin Damping Frequency and Damping Factor in CMOS Integrated Circuits1 2007 IEEE. 4.14.3 and part of 4.4 reprinted, with permission, from ShengFu Hsu and MingDou Ker, Transientinduced latchup dependence on powerpin damping frequency and damping factor in CMOS integrated circuits (abstractsection IV and figures 2, 3, 711, and 1416), in **IEEE Transactions on Electron Devices**, Vol. 54, no. 8, pp. 20022010, Aug. 2007. IEEE, Piscataway, NJ.

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VI-3 effective recombination velocity at a buried layer to epitaxial interface

IIB-4 performance of multichannel CCD structure in filter applications

VI-6 bit packing density of BEAMOS targets

IIB-8 the charge transfer inefficiency of bulk charge-coupled devices between 77 and 300 K

III-4 taper coupled GaAs-AlxGa1-xAs injection lasers with distributed Bragg refelectors

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III-2 output coupling and distributed feedback utilizing substrate corrugations in double heterostructure GaAs lasers

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TLU Dependency on PowerPin Damping Frequency and Damping Factor in CMOS Integrated Circuits1 2007 IEEE. 4.14.3 and part of 4.4 reprinted, with permission, from ShengFu Hsu and MingDou Ker, Transientinduced latchup dependence on powerpin damping frequency and damping factor in CMOS integrated circuits (abstractsection IV and figures 2, 3, 711, and 1416), in IEEE Transactions on Electron Devices, Vol. 54, no. 8, pp. 20022010, Aug. 2007. IEEE, Piscataway, NJ.

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