Conferences related to mHEMTs

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2020 IEEE International Reliability Physics Symposium (IRPS)

Meeting of academia and research professionals to discuss reliability challenges


2020 IEEE Radio and Wireless Symposium (RWS)

RWW2020 will be an international conference covering all aspects of radio and wireless. RWW2020's multidisciplinary events will bring together innovations that are happening across the broad wireless spectrum. RWS2020, this conference application, acts as the main conference for the entire RWW of events that includes the following conferences: PAWR2020, SiRF2020, WiSNet2020, and TWiOS2020 (IEEE Topical Conference on RF/microwave Power Amplifiers, IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, IEEE Topical Conference on Wireless Sensors and Sensor Networks, and IEEE Topical Workshop on the Internet of Space IoS, respectively). In addition to traditional podium presentations and poster sessions, tracks for IEEE Distinguished Lectures, Sunday half-day workshops, Monday panels, and a demo session are planned. A RWW2020 plenary talk are a parallel IoT Summit are planned. A student competition is also planned.

  • 1998 IEEE Radio and Wireless Conference - (RAWCON '98)

  • 1999 IEEE Radio and Wireless Conference - (RAWCON '99)

  • 2000 IEEE Radio and Wireless Conference - (RAWCON 2000)

  • 2001 IEEE Radio and Wireless Conference - (RAWCON 2001)

  • 2002 IEEE Radio and Wireless Conference - (RAWCON 2002)

  • 2003 IEEE Radio and Wireless Conference - (RAWCON 2003)

  • 2004 IEEE Radio and Wireless Conference - (RAWCON 2004)

  • 2006 IEEE Radio and Wireless Symposium (RWS)

  • 2007 IEEE Radio and Wireless Symposium (RWS)

  • 2008 IEEE Radio and Wireless Symposium (RWS)

  • 2009 IEEE Radio and Wireless Symposium (RWS)

    This symposium highlights the state of the art of hardware and systems of radio and wireless

  • 2010 IEEE Radio and Wireless Symposium (RWS)

    RWS focuses on the intersection between radio systems and wireless technology, which creates a unique forum for engineers to discuss various aspects of wireless communication systems and the state-of-the-art in both fields by exploring the connections between hardware design and system performance.

  • 2011 IEEE Radio and Wireless Symposium (RWS)

    All aspects of components and systems related to radio and wireless networks.

  • 2012 IEEE Radio and Wireless Symposium (RWS)

    RWS focuses on the intersection between radio systems and wireless technology, which creates a unique forum for engineers to discuss hardware design and system performance of the state-of-the-art wireless systems. Includes an expanded program on the latest information on wireless communications and networking, and associated enabling technologies as new services and applications emerge.

  • 2013 IEEE Radio and Wireless Symposium (RWS)

    RWS focuses on the intersection between radio systems and wireless technology, which creates a unique forum for engineers to discuss hardware design and system performance of the state-of-the-art wireless systems. Includes an expanded program on the latest information on wireless communications and networking, and associated enabling technologies as new services and applications emerge.

  • 2014 IEEE Radio and Wireless Symposium (RWS)

    RWS focuses on the intersection between radio systems and wireless technology, which creates a unique forum for engineers to discuss hardware design and system performance of the state -of-the-art wireless systems. Includes an expanded program on the latest information on wireless communications and networking, and associated enabling technologies as new services and applications emerge.

  • 2015 IEEE Radio and Wireless Symposium (RWS)

    This is a set of five conferences with a focus on wireless components, applications, and systems that effect both now and our future life style. These conferences main niche is to bring together technologists, circuit designers, system designers, and entrepreneurs at a single event. It was and is the place where these worlds meet, where new processes and systems can be benchmarked against the needs of circuit designers at the bleeding edge of RF systems, where today

  • 2016 IEEE Radio and Wireless Symposium (RWS)

    This is a set of five conferences with a focus on wireless components, applications, and systems that effect both now and our future life style. These conferences main niche is to bring together technologists, circuit designers, system designers, and entrepreneurs at a single event. It was and is the place where these worlds meet, where new processes and systems can be bench-marked against the needs of circuit designers at the bleeding edge of RF systems, where today

  • 2017 IEEE Radio and Wireless Symposium (RWS)

    This is a set of five conferences with a focus on wireless components, applications, and systems that effect both now and our future life style. These conferences main niche is to bring together technologists, circuit designers, system designers, and entrepreneurs at a single event. It was and is the place where these worlds meet, where new processes and systems can be benchmarked against the needs of circuit designers at the bleeding edge of RF systems, where today’s design compromises can trigger tomorrow’s advanced technologies. Where dreams can become a reality.

  • 2018 IEEE Radio and Wireless Symposium (RWS)

    This is a set of five conferences with a focus on wireless components, applications, and systems that effect both now and our future life style. These conferences main niche is to bring together technologists, circuit designers, system designers, and entrepreneurs at a single event. It was and is the place where these worlds meet, where new processes and systems can be benchmarked against the needs of circuit designers at the bleeding edge of RF systems, where today’s design compromises can trigger tomorrow’s advanced technologies. Where dreams can become a reality.

  • 2019 IEEE Radio and Wireless Symposium (RWS)

    This is a conference with a focus on wireless components, applications, and systems that impact both our current and future life style. The conference's main niche is to bring together technologists, circuit designers, system designers, and entrepreneurs at a single event. It was and is the place where these worlds meet, where new processes and systems can be benchmarked against the needs of circuit designers at the bleeding edge of RF systems, where today's design compromises can trigger tomorrow's advanced technologies. Where dreams can become a reality. RWS is the cornerstone conference for Radio Wireless Week.


2020 IEEE/MTT-S International Microwave Symposium (IMS)

The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 1996 IEEE/MTT-S International Microwave Symposium - MTT '96

  • 1997 IEEE/MTT-S International Microwave Symposium - MTT '97

  • 1998 IEEE/MTT-S International Microwave Symposium - MTT '98

  • 1999 IEEE/MTT-S International Microwave Symposium - MTT '99

  • 2000 IEEE/MTT-S International Microwave Symposium - MTT 2000

  • 2001 IEEE/MTT-S International Microwave Symposium - MTT 2001

  • 2002 IEEE/MTT-S International Microwave Symposium - MTT 2002

  • 2003 IEEE/MTT-S International Microwave Symposium - MTT 2003

  • 2004 IEEE/MTT-S International Microwave Symposium - MTT 2004

  • 2005 IEEE/MTT-S International Microwave Symposium - MTT 2005

  • 2006 IEEE/MTT-S International Microwave Symposium - MTT 2006

  • 2007 IEEE/MTT-S International Microwave Symposium - MTT 2007

  • 2008 IEEE/MTT-S International Microwave Symposium - MTT 2008

  • 2009 IEEE/MTT-S International Microwave Symposium - MTT 2009

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2010 IEEE/MTT-S International Microwave Symposium - MTT 2010

    Reports of research and development at the state-of-the-art of the theory and techniques related to the technology and applications of devices, components, circuits, modules and systems in the RF, microwave, millimeter-wave, submillimeter-wave and Terahertz ranges of the electromagnetic spectrum.

  • 2011 IEEE/MTT-S International Microwave Symposium - MTT 2011

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2012 IEEE/MTT-S International Microwave Symposium - MTT 2012

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2013 IEEE/MTT-S International Microwave Symposium - MTT 2013

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter -wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2014 IEEE/MTT-S International Microwave Symposium - MTT 2014

    IMS2014 will cover developments in microwave technology from nano devices to system applications. Technical paper sessions, interactive forums, plenary and panel sessions, workshops, short courses, industrial exhibits, and a wide array of other technical activities will be offered.

  • 2015 IEEE/MTT-S International Microwave Symposium - MTT 2015

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics. The IMS includes technical sessions, both oral and interactive, worksh

  • 2016 IEEE/MTT-S International Microwave Symposium - IMS 2016

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2017 IEEE/MTT-S International Microwave Symposium - IMS 2017

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.

  • 2018 IEEE/MTT-S International Microwave Symposium - IMS 2018

    Microwave theory and techniques, RF/microwave/millimeter-wave/terahertz circuit design and fabrication technology, radio/wireless communication.

  • 2019 IEEE/MTT-S International Microwave Symposium - IMS 2019

    Comprehensive symposium on microwave theory and techniques including active and passive circuit components, theory and microwave systems.

  • 2021 IEEE/MTT-S International Microwave Symposium - IMS 2021

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.

  • 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2024 IEEE/MTT-S International Microwave Symposium - IMS 2024

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2025 IEEE/MTT-S International Microwave Symposium - IMS 2025

    The IEEE International Microwave Symposium (IMS) is the world s foremost conferencecovering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies;encompassing everything from basic technologies to components to systems including thelatest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulationand more. The IMS includes technical and interactive sessions, exhibits, student competitions,panels, workshops, tutorials, and networking events.

  • 2026 IEEE/MTT-S International Microwave Symposium - IMS 2026

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2029 IEEE/MTT-S International Microwave Symposium - IMS 2029

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2031 IEEE/MTT-S International Microwave Symposium - IMS 2031

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2036 IEEE/MTT-S International Microwave Symposium - IMS 2036

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.


2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2019 IEEE Custom Integrated Circuits Conference (CICC)

Conference with technical sessions, educational sessions, panel discussions and forums.



Periodicals related to mHEMTs

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Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Microwave and Wireless Components Letters, IEEE

Published monthly with the purpose of providing fast publication of original and significant contributions relevant to all aspects of microwave/millimeter-wave technology. Emphasis is on devices, components, circuits, guided-wave structures, systems and applications covering the frequency spectrum from microwave and beyond, including submillimeter-waves and infrared.


Microwave Magazine, IEEE

Focuses on applications of technical knowledge. IEEE Microwave Magazine concentrates on general-interest, applications-oriented articles as well as technical articles in the field of microwave theory and techniques including components, devices, circuits, and systems involving the generation, modulation, demodulation, control, transmission and detection of microwaves.


Microwave Theory and Techniques, IEEE Transactions on

Microwave theory, techniques, and applications as they relate to components, devices, circuits, and systems involving the generation, transmission, and detection of microwaves.




Xplore Articles related to mHEMTs

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Effect of gate metal on reliability of metamorphic HEMTs

2001 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.01TH8602), 2001

The influence of the gate metal on the reliability of metamorphic InAlAs/InGaAs HEMTs with a gate length of 0.12 /spl mu/m was studied by biased accelerated life tests in air and in nitrogen. By replacing the Ti-Pt-Au gate by Pt-Ti-Pt-Au we found that the life time at 220/spl deg/C can be increased at least by a factor of two. An ...


Fabrication of 150-nm T-Gate Metamorphic AlInAs/GaInAs HEMTs on GaAs Substrates by MOCVD

IEEE Electron Device Letters, 2011

Metamorphic AlInAs/GaInAs high-electron-mobility transistors (HEMTs) of 150-nm gate length with very good device performance have been grown by metal-organic chemical vapor deposition, with the introduction of an effective multistage buffering scheme. By using a combined optical and e-beam photolithography technology, submicrometer mHEMT devices have been achieved. The devices exhibit good dc and RF performance. The maximum transconductance was 1074 mS/mm. ...


Liquid phase oxidation of InGaAs and its application to InAlAs/InGaAs MOS-MHEMT without gate recess

2008 9th International Conference on Solid-State and Integrated-Circuit Technology, 2008

Selective liquid phase oxidation of InGaAs using photoresist or metal as the mask is proposed, and the application of the InAlAs/InGaAs metal-oxide semiconductor metamorphic high-electron-mobility transistor (MOS-MHEMT) is also demonstrated. Without gate recessing, the gate oxide is obtained directly by oxidizing the InGaAs capping layer in a growth solution. Besides, the proposed process can simplify one mask and grow reliable ...


Metamorphic MMICs for Operation Beyond 200 GHz

2008 European Microwave Integrated Circuit Conference, 2008

In this paper, we present the development of advanced millimeter-wave and submillimeter-wave monolithic integrated circuits for use in active and passive high-resolution imaging systems operating beyond 200 GHz. A 210 GHz subharmonically pumped dual-gate field-effect transistor (FET) mixer has been successfully realized using our 100 nm InAlAs/InGaAs based depletion-type metamorphic high electron mobility transistor (mHEMT) technology in combination with grounded ...


A 243 GHz low-noise amplifier module for use in next-generation direct detection radiometers

2013 European Microwave Integrated Circuit Conference, 2013

A compact H-band (220-325 GHz) low-noise amplifier circuit has been developed, based on a grounded coplanar waveguide (GCPW) technology utilizing 50 nm metamorphic high electron mobility transistors (mHEMTs). The realized four- stage cascode LNA achieved a small-signal gain of 31 dB at 243 GHz and more than 28 dB in the frequency range from 218 to 280 GHz. Coplanar topology ...



Educational Resources on mHEMTs

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IEEE.tv Videos

No IEEE.tv Videos are currently tagged "mHEMTs"

IEEE-USA E-Books

  • Effect of gate metal on reliability of metamorphic HEMTs

    The influence of the gate metal on the reliability of metamorphic InAlAs/InGaAs HEMTs with a gate length of 0.12 /spl mu/m was studied by biased accelerated life tests in air and in nitrogen. By replacing the Ti-Pt-Au gate by Pt-Ti-Pt-Au we found that the life time at 220/spl deg/C can be increased at least by a factor of two. An activation energy of 1.5 eV and a life time of 1.1/spl times/10/sup 6/ h at 125/spl deg/C in air were derived for MHEMTs with Pt-Ti-Pt-Au gate.

  • Fabrication of 150-nm T-Gate Metamorphic AlInAs/GaInAs HEMTs on GaAs Substrates by MOCVD

    Metamorphic AlInAs/GaInAs high-electron-mobility transistors (HEMTs) of 150-nm gate length with very good device performance have been grown by metal-organic chemical vapor deposition, with the introduction of an effective multistage buffering scheme. By using a combined optical and e-beam photolithography technology, submicrometer mHEMT devices have been achieved. The devices exhibit good dc and RF performance. The maximum transconductance was 1074 mS/mm. The nonalloyed ohmic contact resistance_Rc_was as low as 0.02 Ω·mm. The unity current gain cutoff frequency (_fT_) and the maximum oscillation frequency (_f_max) were 279 and 231 GHz, respectively. This device has the highest_fT_yet reported for 150-nm gate-length HEMTs. Also, an input capacitance to gate-drain feedback capacitance ratio_C_gs/_C_gdof 3.2 is obtained in the device.

  • Liquid phase oxidation of InGaAs and its application to InAlAs/InGaAs MOS-MHEMT without gate recess

    Selective liquid phase oxidation of InGaAs using photoresist or metal as the mask is proposed, and the application of the InAlAs/InGaAs metal-oxide semiconductor metamorphic high-electron-mobility transistor (MOS-MHEMT) is also demonstrated. Without gate recessing, the gate oxide is obtained directly by oxidizing the InGaAs capping layer in a growth solution. Besides, the proposed process can simplify one mask and grow reliable oxide films as well as sidewall passivation layers simultaneously. In comparison, the InAlAs/InGaAs MOS-MHEMT is a good candidate for high-power applications.

  • Metamorphic MMICs for Operation Beyond 200 GHz

    In this paper, we present the development of advanced millimeter-wave and submillimeter-wave monolithic integrated circuits for use in active and passive high-resolution imaging systems operating beyond 200 GHz. A 210 GHz subharmonically pumped dual-gate field-effect transistor (FET) mixer has been successfully realized using our 100 nm InAlAs/InGaAs based depletion-type metamorphic high electron mobility transistor (mHEMT) technology in combination with grounded coplanar circuit topology (GCPW). Furthermore, a G-band low-noise amplifier MMIC demonstrating a linear gain of more than 16 dB between 180 and 220 GHz and a state-of-the-art noise figure of 4.8 dB was fabricated using a gate length of 50 nm. Finally, a submillimeter-wave monolithic integrated circuit (S-MMIC) could be realized based on an advanced 35 nm mHEMT technology, offering a small-signal gain of more than 15 dB between 270 and 310 GHz.

  • A 243 GHz low-noise amplifier module for use in next-generation direct detection radiometers

    A compact H-band (220-325 GHz) low-noise amplifier circuit has been developed, based on a grounded coplanar waveguide (GCPW) technology utilizing 50 nm metamorphic high electron mobility transistors (mHEMTs). The realized four- stage cascode LNA achieved a small-signal gain of 31 dB at 243 GHz and more than 28 dB in the frequency range from 218 to 280 GHz. Coplanar topology in combination with cascode transistors resulted in a very compact die size of only 0.5 × 1.5 mm2. For low-loss packaging of the circuit, a set of waveguide- to-microstrip transitions has been realized on 50 μm thick GaAs substrates demonstrating an insertion loss of less than 0.5 dB at 243 GHz. The realized LNA module achieved a small-signal gain of 30.6 dB and a room temperature (T = 293 K) noise figure of 5.6 dB at the frequency of operation.

  • A 200 GHz Medium Power Amplifier MMIC in Cascode Metamorphic HEMT Technology

    A 200 GHz power amplifier is presented. The millimeter-wave monolithic integrated circuit (MMIC) has been realized in a 35 nm InAlAs/InGaAs cascode metamorphic high electron mobility transistor (MHEMT) process in grounded coplanar waveguide technology (GCPW). The amplifier demonstrates an output power of 14 mW with 11.4 dB compressed power gain at 200 GHz. This represents an increase in output power in comparison to previous reported MHEMT-based MMIC amplifiers. The small-signal gain demonstrates a peak value of 20 dB and is above 15.9 dB from 185 to 215 GHz.

  • Planar Zero Bias Schottky Diodes on an InGaAs Metamorphic HEMT MMIC Process

    In this letter, the realization of planar zero bias Schottky diodes on an InGaAs metamorphic high-electron-mobility transistor (mHEMT) MMIC technology is presented. The aim is to investigate the optimum performance for detector applications in an integrated MMIC solution. Device optimization was performed, by analyzing the voltage responsivity of each single diode variation. Voltage responsivities of up to 18000 V/W at W-band frequencies on an intrinsic diode level were achieved. Furthermore, a detector MMIC centered around 105 GHz was realized with a maximum voltage responsivity of 7700 V/W.

  • A Low Power/Low Noise MMIC Amplifier for Phased-Array Applications using InAs/AlSb HEMT

    In this paper, we present a two-stage low-power/low-noise MMIC amplifier. At 10-GHz, the amplifier demonstrates high gain (~18-dB) and moderate noise figure (&lt;1.8-dB) at a total DC power consumption of only 1.38-mW. The ultra-low power MMIC amplifier utilizes InAs/AlSb metamorphic HEMT technology, which enables a low-power/low-noise operating point of 0.15-V and 40-mA/mm for each gain stage, considerably lower than either InP or GaAs low-power bias points. The compact design (1.6times2.6-mm<sup>2</sup>) is realized in coplanar waveguide architecture (CPW), including CPW spiral inductors

  • High-performance 94-GHz single balanced mixer using 70-nm MHEMTs and surface micromachined technology

    We reported 94-GHz, low conversion loss, and high isolation single balanced active gate mixer based on 70-nm gate length InGaAs/InAlAs metamorphic high- electron mobility transistors (MHEMTs). This mixer showed that the conversion loss and isolation characteristics were 2.5/spl sim/3.5 dB and under -29 dB in the range of 92.95/spl sim/94.5 GHz, respectively. The low conversion loss of the mixer is mainly attributed to the high-performance of the MHEMTs exhibiting a maximum drain current density of 607 mA/mm, an extrinsic transconductance of 1015 mS/mm, a current gain cutoff frequency (f/sub t/) of 330 GHz, and a maximum oscillation frequency (f/sub max/) of 425 GHz. High isolation characteristics are due to hybrid ring coupler which adopted dielectric-supported air-gapped microstrip line structure using surface micromachined technology. To our knowledge, these results are the best performance demonstrated from 94 GHz single balanced mixer utilizing GaAs- based HEMTs in terms of conversion loss as well as isolation characteristics.

  • Spurious Mode Suppression in the Design of GCPW Submillimeter-wave Power Amplifiers

    This work investigates the problem of spurious mode propagation in a grounded coplanar waveguide (GCPW) environment at frequencies between 200 GHz and 335 GHz. Design strategies focused on minimizing undesired effects are explored through full-wave electromagnetic (EM) analysis and experimental results from different test structures. It is shown that a λ/13 distance between via-holes should be chosen to avoid unwanted resonances at these high frequencies. The critical role of via-holes is also demonstrated through the experimental comparison of two power splitters. Finally, the need of closed RF pads to avoid any propagation of parasitic modes is experimentally shown in an application example of a power amplifier (PA) cell based on a 35 nm GaAs metamorphic high electron mobility transistor (mHEMT) technology. The PA cell with closed pads achieves a 0.5 dB bandwidth of 28 % with small-signal gain levels larger than 5.2 dB.



Standards related to mHEMTs

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No standards are currently tagged "mHEMTs"