2,127 resources related to X-ray detection
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The conference program will consist of plenary lectures, symposia, workshops and invitedsessions of the latest significant findings and developments in all the major fields of biomedical engineering.Submitted full papers will be peer reviewed. Accepted high quality papers will be presented in oral and poster sessions,will appear in the Conference Proceedings and will be indexed in PubMed/MEDLINE.
2021 IEEE Photovoltaic Specialists Conference (PVSC)
Photovoltaic materials, devices, systems and related science and technology
ECTC is the premier international conference sponsored by the IEEE Components, Packaging and Manufacturing Society. ECTC paper comprise a wide spectrum of topics, including 3D packaging, electronic components, materials, assembly, interconnections, device and system packaging, optoelectronics, reliability, and simulation.
All areas of ionizing radiation detection - detectors, signal processing, analysis of results, PET development, PET results, medical imaging using ionizing radiation
2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)
Ferroelectric materials and applications
The IEEE Aerospace and Electronic Systems Magazine publishes articles concerned with the various aspects of systems for space, air, ocean, or ground environments.
Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission
The IEEE Transactions on Automation Sciences and Engineering (T-ASE) publishes fundamental papers on Automation, emphasizing scientific results that advance efficiency, quality, productivity, and reliability. T-ASE encourages interdisciplinary approaches from computer science, control systems, electrical engineering, mathematics, mechanical engineering, operations research, and other fields. We welcome results relevant to industries such as agriculture, biotechnology, healthcare, home automation, maintenance, manufacturing, pharmaceuticals, retail, ...
Broad coverage of concepts and methods of the physical and engineering sciences applied in biology and medicine, ranging from formalized mathematical theory through experimental science and technological development to practical clinical applications.
Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
EQEC'96. 1996 European Quantum Electronic Conference, 1996
2000 IEEE Nuclear Science Symposium. Conference Record (Cat. No.00CH37149), 2000
Cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) has been regarded as a promising semiconductor material for hard X-ray and gamma-ray detection. The high atomic number of the materials (Z-Cd=48, Z-Te=52) gives a high quantum efficiency in comparison with Si. A large band-gap energy (Eg/spl sim/1.5 eV) allows us to operate the detector at room temperature. However, a considerable amount ...
Conference Record of the 1991 IEEE Nuclear Science Symposium and Medical Imaging Conference, 1991
Novel phoswich counters have been developed that are capable of detecting low flux hard X-rays gamma -rays from localized sources. The counter consists of a small inorganic scintillator with a fast decay time (the detection part) glued to the interior bottom surface of a well-shaped block of another inorganic scintillator with a slow decay time (the shielding part). The well-shaped ...
IEEE Transactions on Nuclear Science, 1999
The authors have developed M-/spl pi/-n (metal high-resistivity p-type crystal, highly n-type epilayer) CdTe detectors in a new design that are suitable for X-ray and /spl gamma/-ray spectrometry in the range of a few tens to several hundred kilo-electron volts. Using high-resistivity single crystal CdTe substrates (resistivity /spl sim/10/sup 9/ /spl Omega//spl middot/cm), an iodine-doped n-CdTe layer was grown homoepitaxially ...
IEEE Symposium Conference Record Nuclear Science 2004., 2004
We propose a CMOS preamplifier-shaper circuit designed to be used with silicon drift detectors (SDDs) for X-ray spectroscopy and /spl gamma/-ray imaging applications. The circuit is composed by a low-noise preamplifier and by a 6th order semiGaussian shaping amplifier with four selectable peaking times from 1.7 /spl mu/s up to 6 /spl mu/s. The integrated time constant used for the ...
An IEEE IPC Special Session with X. Chen from Nokia Bell Labs
Nanoscale Magnetism with Picosecond Time Resolution and High Sensitivity - Hendrik Ohldag - IEEE Magnetics Distinguished Lecture
Larson Collection interview with Rudolph Peierls
Kees Immink, 2017 IEEE Medal of Honor
Message from IEEE President Ray
ECCE Plenary: Pedro Ray, part 1
26th Annual MTT-AP Symposium and Mini Show - Ray Pengelly
ECCE Plenary: Pedro Ray, part 2
WIE ILC Short Sessions: Ray Arata - Engaging Men to Advance Women
An FPGA-Quantum Annealer Hybrid System for Wide-Band RF Detection - IEEE Rebooting Computing 2017
IMS 2011 Microapps - Power Amplifier Design Utilizing the NVNA and X-Parameters
Multi-Function VCO Chip for Materials Sensing and More - Jens Reinstaedt - RFIC Showcase 2018
IMS 2011 Microapps - Local Fundamental Frequency Enhancements for X-Parameter Models
HKN Member Ray Kurzweil Receives Award at 2014 EAB Awards Ceremony
MicroApps: 200W RF Power Amplifer Design using a Nonlinear Vector Network Analyzer and Measured Load-Dependent X-Parameters (2) (Agilent Technologies)
2009 IEEE Honors Ceremony
Honda U3-X Personal Mobility Device in NY
Q&A with Dr. K. J. Ray Liu: IEEE Big Data Podcast, Episode 11
5G Future X Network & the Next Industrial Revolution - Peter Vetter - 5G World Forum Santa Clara 2018
Cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) has been regarded as a promising semiconductor material for hard X-ray and gamma-ray detection. The high atomic number of the materials (Z-Cd=48, Z-Te=52) gives a high quantum efficiency in comparison with Si. A large band-gap energy (Eg/spl sim/1.5 eV) allows us to operate the detector at room temperature. However, a considerable amount of charge loss in these detectors produces a reduced energy resolution. This problem arises due to the low mobility and short lifetime of holes. Recently, significant improvements have been achieved to improve the spectral properties based on the advances in the production of crystals and in the design of electrode. In this overview talk, we summarize (1) advantages and disadvantages of CdTe and CdZnTe semiconductors, (2) a technique to improve the energy resolution and photopeak efficiencies at high gamma-ray energy, and (3) recent achievements of segmented (strip and pixel) CdTe and CdZnTe detectors. The application of these imaging detectors in future hard X-ray and gamma-ray astronomy missions is briefly discussed.
Novel phoswich counters have been developed that are capable of detecting low flux hard X-rays gamma -rays from localized sources. The counter consists of a small inorganic scintillator with a fast decay time (the detection part) glued to the interior bottom surface of a well-shaped block of another inorganic scintillator with a slow decay time (the shielding part). The well-shaped shielding part acts as an active collimator as well as an active shield. The whole assembly is viewed by a phototube from the exterior bottom surface of the shielding part. By using an appropriate pulse-shape discriminator, hard X-rays/ gamma -rays that have deposited energy only in the detection part can be selected. The first model counter was built by using a new scintillator, GSO, in the detection part and CsI(Tl) in the shielding part. A detector system consisting of 64 such phoswich counters (total area approximately 740 cm/sup 2/) was flown on board a balloon, setting a limit to the /sup 57/Co line flux from SN 1987A at around 10/sup -4//cm/sup 2/-s. The sensitivity for continuum flux was around a few*10/sup -6//cm/sup 2/-s-keV between 100 and 200 keV.<<ETX>>
The authors have developed M-/spl pi/-n (metal high-resistivity p-type crystal, highly n-type epilayer) CdTe detectors in a new design that are suitable for X-ray and /spl gamma/-ray spectrometry in the range of a few tens to several hundred kilo-electron volts. Using high-resistivity single crystal CdTe substrates (resistivity /spl sim/10/sup 9/ /spl Omega//spl middot/cm), an iodine-doped n-CdTe layer was grown homoepitaxially on one face of each wafer at a low substrate temperature of 150/spl deg/C using the hydrogen plasma radical assisted metalorganic chemical vapor deposition technique. An indium electrode was deposited on the n-CdTe side as an ohmic contact by evaporation without heating the crystals, while a gold electrode was deposited on the opposite side for metallic contact. The leakage current was decreased to around 0.5 nA for a 2/spl times/2 mm/sup 2/ detector of thickness 1 mm at room-temperature (18/spl deg/C) and around 10 pA at -15/spl deg/C for an applied negative bias of 350 V. Low leakage currents in the detector enabled the authors to apply higher bias voltages resulting in better charge collection efficiency and improved spectral responses for different radioisotopes.
We propose a CMOS preamplifier-shaper circuit designed to be used with silicon drift detectors (SDDs) for X-ray spectroscopy and /spl gamma/-ray imaging applications. The circuit is composed by a low-noise preamplifier and by a 6th order semiGaussian shaping amplifier with four selectable peaking times from 1.7 /spl mu/s up to 6 /spl mu/s. The integrated time constant used for the shaping is implemented by means of a recently proposed 'RC' cell. This cell is based on the well known technique of demagnification of the current flowing in a resistor R by means of the use of current mirrors. The particular solution here adopted allows a precise and stable implementation of the desired time constant, for given values of R and C, and guarantees low-noise performances of the shaping amplifier when used with a cooled SDD or other solid-state detectors with low leakage current. In this work, the main features of the circuit are first presented. The experimental results obtained in the characterization of the first prototype realized in the 0.35 /spl mu/m AMS technology are then reported and discussed. The energy resolution measured using the chip with a SDD is 150 eV at 6 keV which corresponds to an electronics noise of 10.8 e/sup -/ rms.
Polycrystalline films of HgI2, which are used as nuclear radiation detectors, are fabricated by two different methods, either by physical vapor deposition (PVD) or glued with a polymeric binder called also "particle in binder" (PIB). Both types of PVD or PIB detectors are deposited directly on TFT imagers and can be used for X-ray imaging. The present review will concentrate on PVD- poly-HgI2. However, the main review body will be a summary of the work performed by RTR, HU and Varian. Works by other groups will be mentioned briefly. The PVD process will be explained by reviewing XRD and SEM data. The charge transport properties of the PVD-polycrystalline HgI2detectors as they improved with R&D efforts will be shown. The response of these PVD detectors to241Am and57Co gamma rays and their X-ray imaging properties such as dark currents, sensitivity, and imaging resolution will be reviewed
Technology for detecting and preventing acts of terrorism is addressed. Attention is directed toward methods for detecting explosives. The one technology, thermal-neutron activation (TNA), that has so far proven that it can quickly and reliably detect specified quantities of explosives within luggage and divert suspect bags without human intervention is described. Promising alternatives to TNA, which is very expensive, are resonance absorption of gamma rays and fast neutron activation.<<ETX>>
The gallium arsenide detectors working in photovaultarical mode on epitaxial films compensated by chromium are developed. It is shown that in such detectors it is possible to essentially increase the efficiency of charge collection at inclined position of the detector relatively X-rays. The image with resolution 5 lp/mm is received by created coordinate detectors.
We have observed the X-ray radiation produced by the nonlinear Thomson scattering of an intense femtosecond laser on relativistic electrons. The 1 J 30 fs laser beam is focussed on a helium gas jet and the X-ray radiation is detected using a grazing incidence X-ray spectrometer. The analysis of the data shows that the effect of the plasma as well as the additional acceleration of the electrons inside the plasma waves should be taken into account to fit the experimental results.
A theoretical method for identifying optimal X-ray imaging geometry is presented and applied to cone-beam CT (CBCT) using a flat-panel imager (FPI). The method includes the effects of X-ray source distribution, imaging task, X-ray scatter, and detective quantum efficiency (DQE) on the ICRU-recommended figure of merit for image quality-detectability index. Cascaded systems analysis for FPIs is extended to incorporate the effects of X-ray scatter directly into the DQE. For the FPI-CBCT prototype being implemented for image- guided radiotherapy of the prostate, optimal magnification is /spl sim/1.4-1.6, depending primarily on the magnitude of the X-ray scatter fraction.
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