Conferences related to Wide band gap semiconductors

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2021 IEEE Photovoltaic Specialists Conference (PVSC)

Photovoltaic materials, devices, systems and related science and technology


2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe)

Energy conversion and conditioning technologies, power electronics, adjustable speed drives and their applications, power electronics for smarter grid, energy efficiency,technologies for sustainable energy systems, converters and power supplies


2020 IEEE Applied Power Electronics Conference and Exposition (APEC)

APEC focuses on the practical and applied aspects of the power electronics business. Not just a power designer’s conference, APEC has something of interest for anyone involved in power electronics including:- Equipment OEMs that use power supplies and converters in their equipment- Designers of power supplies, dc-dc converters, motor drives, uninterruptable power supplies, inverters and any other power electronic circuits, equipments and systems- Manufacturers and suppliers of components and assemblies used in power electronics- Manufacturing, quality and test engineers involved with power electronics equipment- Marketing, sales and anyone involved in the business of power electronic- Compliance engineers testing and qualifying power electronics equipment or equipment that uses power electronics


2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2020 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC)

All areas of ionizing radiation detection - detectors, signal processing, analysis of results, PET development, PET results, medical imaging using ionizing radiation


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Periodicals related to Wide band gap semiconductors

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Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Display Technology, Journal of

This publication covers the theory, design, fabrication, manufacturing and application of information displays and aspects of display technology that emphasize the progress in device engineering, device design, materials, electronics, physics and reliabilityaspects of displays and the application of displays.


Electrical Insulation Magazine, IEEE

The magazine covers theory, analysis, design (computer-aided design), and practical implementation of circuits, and the application of circuit theoretic techniques to systems and to signal processing. Content is written for the spectrum of activities from basic scientific theory to industrial applications.


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


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Most published Xplore authors for Wide band gap semiconductors

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Xplore Articles related to Wide band gap semiconductors

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Emerging Applications of III-Nitride Nanowires by Molecular Beam Epitaxy: From Deep Ultraviolet and Micro Light Emitters to Artificial Photosynthesis

IEEE Nanotechnology Magazine, None

None


Light emission from rare earth lumophores in inorganic and organic hosts

2005 IEEE LEOS Annual Meeting Conference Proceedings, 2005

This paper presents a review on the properties of rare earth (RE) lumophores incorporated in selected inorganic hosts and secondarily in organic materials. The main RE lumophore-host combination discussed involves the use of the wide bandgap semiconductor GaN and related family of III-N (AlN/GaN/InN) compounds and alloys. The relationship between the fabrication technique, material properties and related light emitting device ...


High Quality Epitaxially-grown InAs on GaP Substrates

2005 International Semiconductor Device Research Symposium, 2005

None


State-of-the-art wide band-gap semiconductors for power electronic devices

International Meeting for Future of Electron Devices, 2004., 2004

In this paper, state-of-the-art wide band-gap semiconductors is described mainly for SiC considering the application for power electronic devices including some of nitride-based devices.


pH sensors based on wide bandgap semiconductors

58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526), 2000

Wide bandgap semiconductors like diamond and GaN are privileged materials for chemical sensing because of their high stability to many chemical agents. Indeed, the acidity variation of chemical solutions from pH=0 to pH=14 will modify the surface potential by /spl Delta//spl phi//spl ap/0.84 eV (59.3 mV/pH at 20/spl deg/C), which is only a small part of the bandgap of these ...


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Educational Resources on Wide band gap semiconductors

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IEEE.tv Videos

Agilent: Test up to 1500 amps and 10,000 volts!
Single Crystal AlGaN Bulk Acoustic Wave Resonators on Silicon Substrates with High Electromechanical Coupling: RFIC Industry Showcase
An FPGA-Quantum Annealer Hybrid System for Wide-Band RF Detection - IEEE Rebooting Computing 2017
A Wideband Single-PLL RF Receiver for Simultaneous Multi-Band and Multi-Channel Digital Car Radio Reception: RFIC Industry Showcase
A 40GHz PLL with -92.5dBc/Hz In-Band Phase Noise and 104fs-RMS-Jitter: RFIC Interactive Forum 2017
NXP
IMS 2015: Edward Tong - John Tucker Special Tribute - Ultra-wide IF Bandwidth - The Next Frontier for SIS Receivers
Infineon Technologies: Power Efficiency from Generation to Consumption
Optical Stealth Communication based on Amplified Spontaneous Emission Noise - Ben Wu - IEEE Sarnoff Symposium, 2019
IMS 2014: Broadband Continuous-mode Power Amplifiers
Resonant Power Supply: NXP
Next Generation Power Supplies - APEC 2016
Flexible Radios and Flexible Networks
Maker Faire 2008: The Guitar Zeros
NIKSUN World Wide Security & Mobility Conference 2011-D Raychaudhuri
Magnetic Materials and Magnetic Devices - Josep Fontcuberta: IEEE Magnetics Distinguished Lecture 2016
An 8-10GHz Upconversion Mixer, with a Low-Frequency Calibration Loop Resulting in Better Than -73dBc In-Band Spurs: RFIC Interactive Forum
Envelope Time-Domain Characterizations to Assess In-Band Linearity Performances of Pre-Matched MASMOS Power Amplifier: RFIC Interactive Forum 2017
Micro-Apps 2013: Designing an ETSI E-Band Circuit for a MM Wave Wireless System
NIKSUN World Wide Security & Mobility Conference 2011 - V Solanki Lecture

IEEE-USA E-Books

  • Emerging Applications of III-Nitride Nanowires by Molecular Beam Epitaxy: From Deep Ultraviolet and Micro Light Emitters to Artificial Photosynthesis

    None

  • Light emission from rare earth lumophores in inorganic and organic hosts

    This paper presents a review on the properties of rare earth (RE) lumophores incorporated in selected inorganic hosts and secondarily in organic materials. The main RE lumophore-host combination discussed involves the use of the wide bandgap semiconductor GaN and related family of III-N (AlN/GaN/InN) compounds and alloys. The relationship between the fabrication technique, material properties and related light emitting device characteristics are also described.

  • High Quality Epitaxially-grown InAs on GaP Substrates

    None

  • State-of-the-art wide band-gap semiconductors for power electronic devices

    In this paper, state-of-the-art wide band-gap semiconductors is described mainly for SiC considering the application for power electronic devices including some of nitride-based devices.

  • pH sensors based on wide bandgap semiconductors

    Wide bandgap semiconductors like diamond and GaN are privileged materials for chemical sensing because of their high stability to many chemical agents. Indeed, the acidity variation of chemical solutions from pH=0 to pH=14 will modify the surface potential by /spl Delta//spl phi//spl ap/0.84 eV (59.3 mV/pH at 20/spl deg/C), which is only a small part of the bandgap of these materials. Therefore, such sensors can operate without surface passivation like Si-based sensors and no degradation/hysteresis behaviour is expected even in harsh environments and at high temperatures. However, the second requisite is a unpinned surface potential. The operation of the chemically controlled semiconductor sensors presented here is based on the FET mode of operation, i.e. on modulation of the conductivity of the device channel by an electrochemical potential at the liquid-semiconductor interface forming a liquid gate. It is known that an unpinned surface state can be obtained on p-type diamond provided that the surface is terminated with hydrogen atoms (Kawarada, 1996). In this case, the barrier heights of Schottky contacts exhibit a strong dependence on the metal work function. A similar behaviour of Schottky barrier heights (SBH) is also observed on as-grown n-type GaN layers. These results imply that the channels of both diamond and GaN can be depleted depending on the redox potential of aqueous solutions. In this paper, the results of first pH sensors on diamond and GaN are described.

  • Improvement of PV Performance by Using Multi-Stacked High Density InAs Quantum Dot Molecules

    InAs quantum dot molecules (QDMs) are prepared by thin-capping-and-regrowth MBE process. The dot density can be varied between 10<sup>10</sup> cm<sup>-2</sup>, for as-grown quantum dots (QDs), to 10<sup>12</sup> cm<sup>-2</sup>, for multi-stack QDMs. Photocurrent measurements on 1-and 5-stack high-density QDM layers show that these InAs QDMs when embedded inside a GaAs bulk structure extend photon absorption beyond the 850-nm bandedge limited by GaAs. The results also indicate that the higher the number of stacks the higher the resulting current. The presence of high-density QDMs in solar cells thus extends the absorption region and at the same time increase the output current. Electrical characterisations on homojunction (p-n) solar cells with 1-and 5-stack high-density QDMs embedded between the junction show that the 5-stack sample provides a higher short-circuit current density of J<sub>sc</sub>=14.4 mA/cm<sup>2</sup> compared to 9.6 mA/cm <sup>2</sup> provided by the 1-stack sample. The increase is due entirely to the difference in absorptive dot volume accounted for by the difference in the number of stacks of high-density InAs QDMs. The efficiency of homo-structure 5-stack high-density QDM solar cell is 5.1%

  • Mobility and Sheet Charge in High-Electron Mobility Transistor Quantum Wells From Photon-Induced Transconductance

    When a high-electron mobility transistor is illuminated, the absorbed photons excite electron–hole pairs. The generated pairs are separated by the built-in field in such a way that the electrons end up in the quantum well generating a photocurrent, while together with the holes that are swept toward the gate, they generate a surface photovoltage. Here, we define the photon-induced transconductance as the ratio between the surface photovoltage and the 2-dimensional electron gas (2DEG) photocurrent under identical illumination conditions. We show that this ratio directly yields the channel mobility and the 2DEG sheet charge density. The photocurrent and photovoltage may vary with the wavelength of the exciting photons. We examine and analyze the optical spectra of this photon-induced transconductance obtained from an AlGaN/GaN heterostructure for a range of photon energies showing that the mobility is obtained only for excitation at photon energies above the wide bandgap energy. The method offers an optical alternative to Hall effect and to field-effect mobility. Unlike Hall effect, it may be measured in the transistor itself. The only alternative that can measure mobility in the transistor itself measures field-effect mobility, while the proposed method measures the same conductivity mobility as measured by Hall effect.

  • Ultra-wide bandgap AlGaN channel MISFET with polarization engineered ohmics

    We report on the first ultra-wide bandgap Al0.75Ga0.25N channel metal- insulator-semiconductor field-effect transistor (MISFET) with heterostructure engineered ohmic contacts. The large breakdown field of AlN (12 MV/cm) and the superior device figures of merit make wider bandgap AlGaN attractive for the next-generation RF power amplifiers and switches [1]. However, a critical challenge preventing advancement in high composition AlGaN-based devices is the high resistance of ohmic contacts, due to the large ionization energy of dopants and the low electron affinity of AlN, both of which increase tunneling barrier for electrons. In this work, we use reverse polarization-graded n++ AlGaN contact layers to achieve a record low contact resistance (Rc) of 0.3 Ω.mm to 75 nm thick n-Al0.75Ga0.25N channel, translating in a specific contact resistance (ρsp) of 1.9×10-6Ω.cm2. We then demonstrate the first ultra-wide bandgap Al0.75Ga0.25N channel MISFET with gate-recessed structure, employing polarization-graded contacts and Atomic Layer Deposited Al2O3as the gate- dielectric.

  • Selective growth of ZnO nanotips using MOCVD

    ZnO is a wide bandgap semiconductor having a direct bandgap of 3.32 eV at room temperature. It has an exciton binding energy of 60 meV. It is found to be significantly more radiation hard than Si, GaAs, and GaN, which is critical against wearing out during field emission. Furthermore, ZnO can also be made as transparent and highly conductive, or piezoelectric. The ZnO nanotips can be grown at relatively low temperatures, giving ZnO a unique advantage over other wide bandgap semiconductors, such as GaN and SiC. In the present work, we report the selective growth of ZnO nanotips on various substrates using MOCVD. The ZnO nanotips are single crystalline, n-type conductive and show good optical properties. These nanotips have potential applications in field emission devices and UV photonics.

  • MM-wave characteristics of SiC-based IMPATT oscillators

    Wide band gap semiconductor SiC with their superior electrical properties are likely candidates to replace conventional low band gap materials like Si and GaAs in the near future for RF power applications. The authors have therefore studied this prospects through advanced computer simulation experiment on hexagonal (both 4 H and 6 H) SiC based double drift region IMPATT diodes. The study indicates that around 300 GHz, 4 H-SiC based Impatt devices is capable of generating high microwave power with efficiency as compared to 6 H-SiC based IMPATT diodes for the same frequency of operation.



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