Conferences related to Wet etching

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2023 Annual International Conference of the IEEE Engineering in Medicine & Biology Conference (EMBC)

The conference program will consist of plenary lectures, symposia, workshops and invitedsessions of the latest significant findings and developments in all the major fields of biomedical engineering.Submitted full papers will be peer reviewed. Accepted high quality papers will be presented in oral and poster sessions,will appear in the Conference Proceedings and will be indexed in PubMed/MEDLINE.


2021 IEEE Photovoltaic Specialists Conference (PVSC)

Photovoltaic materials, devices, systems and related science and technology


2020 IEEE 70th Electronic Components and Technology Conference (ECTC)

ECTC is the premier international conference sponsored by the IEEE Components, Packaging and Manufacturing Society. ECTC paper comprise a wide spectrum of topics, including 3D packaging, electronic components, materials, assembly, interconnections, device and system packaging, optoelectronics, reliability, and simulation.


2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


IECON 2020 - 46th Annual Conference of the IEEE Industrial Electronics Society

IECON is focusing on industrial and manufacturing theory and applications of electronics, controls, communications, instrumentation and computational intelligence.


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Periodicals related to Wet etching

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Advanced Packaging, IEEE Transactions on

The IEEE Transactions on Advanced Packaging has its focus on the modeling, design, and analysis of advanced electronic, photonic, sensors, and MEMS packaging.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Biomedical Engineering, IEEE Transactions on

Broad coverage of concepts and methods of the physical and engineering sciences applied in biology and medicine, ranging from formalized mathematical theory through experimental science and technological development to practical clinical applications.


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Display Technology, Journal of

This publication covers the theory, design, fabrication, manufacturing and application of information displays and aspects of display technology that emphasize the progress in device engineering, device design, materials, electronics, physics and reliabilityaspects of displays and the application of displays.


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Most published Xplore authors for Wet etching

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Xplore Articles related to Wet etching

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Integration of Poly Buffered Locos and Gate Processing for Submicron Isolation Technique

[1991] 49th Annual Device Research Conference Digest, 1991

None


Design and implementation of a miniature polymer ball bearing slide table

2011 IEEE 24th International Conference on Micro Electro Mechanical Systems, 2011

This study presents a novel design and fabrication process to realize a miniature polymer ball bearing slide table (slider) with long linear travel range. The linear slide table consists of a pair of V-shape silicon (111) crystal plane rails, and a suspended slider supported by four polymer ball bearings. The ball-housing on slider is also designed to confine the bearing. ...


Pseudo-Hall effect and anisotropic magnetoresistance in a micron-scale Ni/sub 80/Fe/sub 20/ device

IEEE Transactions on Magnetics, 1999

The pseudo-Hall effect (PHE) and anisotropic magnetoresistance (AMR) in a micron-scale Ni/sub 80/Fe/sub 20/ six-terminal device, fabricated by optical lithography and wet chemical etching from a high quality UHV grown 30 /spl Aring/ Au/300 A Ni/sub 80/Fe/sub 20/ film, have been studied. The magnetisation reversal in different parts of the device has been measured using magneto-optical Kerr effect (MOKE). The ...


Improving metal step coverage with Ar sputtering

1991 Proceedings Eighth International IEEE VLSI Multilevel Interconnection Conference, 1991

Ar sputtering is applied to taper contact side-walls; experimental results show that metal step coverage is significantly improved as compared to conventional wet+dry contact etching without reflow. The sputtering improves the metal step coverage by rounding off the sharp corners on contact side- walls without contact CD loss nor degrading device performance. This approach is extremely useful for shallow junction ...


Wet etched complex three dimensional MEMS structures

2009 International Symposium on Micro-NanoMechatronics and Human Science, 2009

The present research reports the fabrication techniques for the formation of complex three dimensional structures. The process is developed using very economic wet anisotropic etching in pure and surfactant Triton X-100 [C<sub>14</sub>H<sub>22</sub>O(C<sub>2</sub>H<sub>4</sub>O)<sub>n</sub>, n= 9-10] added 25 wt% tetramethyl ammonium hydroxide (TMAH) solutions. The structures are fabricated in single and nitride-based silicon on insulator (SOI) Si{100} wafers. In single wafer, both ...


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Educational Resources on Wet etching

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IEEE-USA E-Books

  • Integration of Poly Buffered Locos and Gate Processing for Submicron Isolation Technique

    None

  • Design and implementation of a miniature polymer ball bearing slide table

    This study presents a novel design and fabrication process to realize a miniature polymer ball bearing slide table (slider) with long linear travel range. The linear slide table consists of a pair of V-shape silicon (111) crystal plane rails, and a suspended slider supported by four polymer ball bearings. The ball-housing on slider is also designed to confine the bearing. The slider, rails, and ball-housings are patterned by DRIE and wet anisotropic etching on double-polished (100) wafer. The ball bearings are fabricated and in-situ self-assembled using the liquid polymer formation technique in buffer liquid. After polymer solidified by UV-curing, the ball bearing is confined in ball-housing. The device is successfully implemented and the traveling test is also demonstrated using magnetic force.

  • Pseudo-Hall effect and anisotropic magnetoresistance in a micron-scale Ni/sub 80/Fe/sub 20/ device

    The pseudo-Hall effect (PHE) and anisotropic magnetoresistance (AMR) in a micron-scale Ni/sub 80/Fe/sub 20/ six-terminal device, fabricated by optical lithography and wet chemical etching from a high quality UHV grown 30 /spl Aring/ Au/300 A Ni/sub 80/Fe/sub 20/ film, have been studied. The magnetisation reversal in different parts of the device has been measured using magneto-optical Kerr effect (MOKE). The device gives a 50% change in PHE voltage with an ultrahigh sensitivity of 7.3%Oe/sup -1/ at room temperature. The correlation between the magnetisation, magneto-transport properties, lateral shape of the device and directions of the external applied field is discussed based on extensive MOKE, AMR and PHE results.

  • Improving metal step coverage with Ar sputtering

    Ar sputtering is applied to taper contact side-walls; experimental results show that metal step coverage is significantly improved as compared to conventional wet+dry contact etching without reflow. The sputtering improves the metal step coverage by rounding off the sharp corners on contact side- walls without contact CD loss nor degrading device performance. This approach is extremely useful for shallow junction formation and titanium or tungsten silicide processes which can not tolerate high temperature reflow. The depth limitation for 0.8 mu m contacts on metal step coverage improvement is found to be around 1.0 um.<<ETX>>

  • Wet etched complex three dimensional MEMS structures

    The present research reports the fabrication techniques for the formation of complex three dimensional structures. The process is developed using very economic wet anisotropic etching in pure and surfactant Triton X-100 [C<sub>14</sub>H<sub>22</sub>O(C<sub>2</sub>H<sub>4</sub>O)<sub>n</sub>, n= 9-10] added 25 wt% tetramethyl ammonium hydroxide (TMAH) solutions. The structures are fabricated in single and nitride-based silicon on insulator (SOI) Si{100} wafers. In single wafer, both fixed and suspended structures are manufactured, while in SOI wafers only freestanding structures are realized. The present research is aimed to enhance the range of 3D structures fabricated using wet etching.

  • Fabrication of MEMS structure with nano-gap using photo-assisted electrochemical etching

    In this paper, MEMS comb structures with several tens of nanometer gap and ultra high aspect ratio more than 125:1 has been achieved using modified photo-assisted electro-chemical etching method. It is possible to control the gap of the comb structure from 50 nm to 1 /spl mu/m by adjusting the intensity of the light source, which is unusually blue LED (light emitting diodes) in this experiment. By changing the bias and the composition of electrolyte that consists of H/sub 2/O or DMF (dimethyl-formamide) based 5% HF (hydrofluoric acid) and 20% ethanol as a wetting agent, the characteristics of the etching were observed. Finally MEMS comb structure with uniform 200 nm gap and 25 /spl mu/m depth was well defined.

  • Patterning Si/sub 3/N/sub 4/ and TiN with scanning probe lithography

    Processes to pattern nanostructures on the Si/sub 3/N/sub 4/ and TiN films based on scanning probe lithography have been demonstrated. The patterned Si/sub 3/N/sub 4/ and TiN films were used as etch masks to produce nanostructure on Si substrates. The oxide growth kinetics of both nitride films was studied. The oxide height vs. oxidation period obeys the logarithmic relationship. TiN is superior to Si/sub 3/N/sub 4/ as etching mask due to its high oxide growth rate and better performance for dry etching.

  • Impact of Metal Wet Etch on Device Characteristics and Reliability for Dual Metal Gate/High-k CMOS

    This paper presents a comparative study of the impact of metal wet etch on carrier mobility and metal gate/high-k device characteristics and reliability. A TaSiN metal wet etch process that is highly selective to the underlying HfO<sub>2</sub> dielectric has been developed. While the metal wet etch slightly degraded the electron mobility, it did not affect hole mobility. It did not show any effect on fast transient charge trapping, and, in fact, improved negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI)

  • Multi-layer resist systems as a means to submicron optical lithography

    None

  • Characterization of density of trap states at the back interface of SIMOX wafers

    We measured the density of the trap states at the interface of SIMOX (Separation by Implanted Oxygen) wafers by high frequency C-V measurements of MOS diodes fabricated on SIMOX wafers. SIMOX structures with p-type or n-type silicon substrates are found to have traps of about 10/sup 12/ cm/sup -2/ eV/sup -1/ at the back interface. We tried to estimate the density of the trap states at the front interface, too.



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