Conferences related to Uniaxial strain

Back to Top

2020 IEEE 70th Electronic Components and Technology Conference (ECTC)

ECTC is the premier international conference sponsored by the IEEE Components, Packaging and Manufacturing Society. ECTC paper comprise a wide spectrum of topics, including 3D packaging, electronic components, materials, assembly, interconnections, device and system packaging, optoelectronics, reliability, and simulation.


2020 IEEE International Conference on Robotics and Automation (ICRA)

The International Conference on Robotics and Automation (ICRA) is the IEEE Robotics and Automation Society’s biggest conference and one of the leading international forums for robotics researchers to present their work.


2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2020 IEEE/MTT-S International Microwave Symposium (IMS)

The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2036 IEEE/MTT-S International Microwave Symposium - IMS 2036

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2031 IEEE/MTT-S International Microwave Symposium - IMS 2031

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2029 IEEE/MTT-S International Microwave Symposium - IMS 2029

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2026 IEEE/MTT-S International Microwave Symposium - IMS 2026

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2025 IEEE/MTT-S International Microwave Symposium - IMS 2025

    The IEEE International Microwave Symposium (IMS) is the world s foremost conferencecovering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies;encompassing everything from basic technologies to components to systems including thelatest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulationand more. The IMS includes technical and interactive sessions, exhibits, student competitions,panels, workshops, tutorials, and networking events.

  • 2024 IEEE/MTT-S International Microwave Symposium - IMS 2024

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2021 IEEE/MTT-S International Microwave Symposium - IMS 2021

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.

  • 2019 IEEE/MTT-S International Microwave Symposium - IMS 2019

    Comprehensive symposium on microwave theory and techniques including active and passive circuit components, theory and microwave systems.

  • 2018 IEEE/MTT-S International Microwave Symposium - IMS 2018

    Microwave theory and techniques, RF/microwave/millimeter-wave/terahertz circuit design and fabrication technology, radio/wireless communication.

  • 2017 IEEE/MTT-S International Microwave Symposium - IMS 2017

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.

  • 2016 IEEE/MTT-S International Microwave Symposium - IMS 2016

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2015 IEEE/MTT-S International Microwave Symposium - MTT 2015

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics. The IMS includes technical sessions, both oral and interactive, worksh

  • 2014 IEEE/MTT-S International Microwave Symposium - MTT 2014

    IMS2014 will cover developments in microwave technology from nano devices to system applications. Technical paper sessions, interactive forums, plenary and panel sessions, workshops, short courses, industrial exhibits, and a wide array of other technical activities will be offered.

  • 2013 IEEE/MTT-S International Microwave Symposium - MTT 2013

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter -wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2012 IEEE/MTT-S International Microwave Symposium - MTT 2012

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2011 IEEE/MTT-S International Microwave Symposium - MTT 2011

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2010 IEEE/MTT-S International Microwave Symposium - MTT 2010

    Reports of research and development at the state-of-the-art of the theory and techniques related to the technology and applications of devices, components, circuits, modules and systems in the RF, microwave, millimeter-wave, submillimeter-wave and Terahertz ranges of the electromagnetic spectrum.

  • 2009 IEEE/MTT-S International Microwave Symposium - MTT 2009

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2008 IEEE/MTT-S International Microwave Symposium - MTT 2008

  • 2007 IEEE/MTT-S International Microwave Symposium - MTT 2007

  • 2006 IEEE/MTT-S International Microwave Symposium - MTT 2006

  • 2005 IEEE/MTT-S International Microwave Symposium - MTT 2005

  • 2004 IEEE/MTT-S International Microwave Symposium - MTT 2004

  • 2003 IEEE/MTT-S International Microwave Symposium - MTT 2003

  • 2002 IEEE/MTT-S International Microwave Symposium - MTT 2002

  • 2001 IEEE/MTT-S International Microwave Symposium - MTT 2001

  • 2000 IEEE/MTT-S International Microwave Symposium - MTT 2000

  • 1999 IEEE/MTT-S International Microwave Symposium - MTT '99

  • 1998 IEEE/MTT-S International Microwave Symposium - MTT '98

  • 1997 IEEE/MTT-S International Microwave Symposium - MTT '97

  • 1996 IEEE/MTT-S International Microwave Symposium - MTT '96


2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)

The world's premiere conference in MEMS sensors, actuators and integrated micro and nano systems welcomes you to attend this four-day event showcasing major technological, scientific and commercial breakthroughs in mechanical, optical, chemical and biological devices and systems using micro and nanotechnology.The major areas of activity in the development of Transducers solicited and expected at this conference include but are not limited to: Bio, Medical, Chemical, and Micro Total Analysis Systems Fabrication and Packaging Mechanical and Physical Sensors Materials and Characterization Design, Simulation and Theory Actuators Optical MEMS RF MEMS Nanotechnology Energy and Power


More Conferences

Periodicals related to Uniaxial strain

Back to Top

Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Biomedical Engineering, IEEE Transactions on

Broad coverage of concepts and methods of the physical and engineering sciences applied in biology and medicine, ranging from formalized mathematical theory through experimental science and technological development to practical clinical applications.


Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Dielectrics and Electrical Insulation, IEEE Transactions on

Electrical insulation common to the design and construction of components and equipment for use in electric and electronic circuits and distribution systems at all frequencies.


More Periodicals

Most published Xplore authors for Uniaxial strain

Back to Top

Xplore Articles related to Uniaxial strain

Back to Top

Effect of cyclic stress on Terfenol-D

IEEE Transactions on Magnetics, 1996

A rod of grain oriented Terfenol-D has been subjected to cyclic uniaxial stress of /spl plusmn/100 MPa about a mean preload of /spl sim/120 MPa applied along the <112> grain growth axis. The magnetostrictive strain and d-coefficient measured under uniaxial preload and quasi static magnetic fields are shown to increase after the initial 10/sup 6/ cycles of stress. The characterisation ...


Crystal-direction dependence of uniaxial tensile strain in ultra-thin SOI

2004 IEEE International SOI Conference (IEEE Cat. No.04CH37573), 2004

Strain engineering by lateral relaxation is a powerful method for generating large biaxial and uniaxial silicon strain in an SOI structure. By choosing the crystal direction of the features, one should be able to control not only the mobility enhancement, but also maximize the uniaxial strain. Uniaxial tensile strain as large as 1.0% in the (100) direction can be achieved ...


Nanowire FETs

2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC), 2018

In this work, we study 2.1nm-diameter uniaxial strained Si gate-all-around nanowire field-effect transistors, focusing on the electron mobility and the variability due to random discrete dopants (RDDs). Firstly, we extract the electron effective masses under various strains from Density Functional Theory (DFT) simulations. Secondly, we present the impact of the strain on the electron mobility in the Si nanowire using ...


Inversion layer properties of 〈110〉 uniaxially strained silicon n-channel MOSFETs

2008 International Conference on Electrical and Computer Engineering, 2008

This paper discusses the influence of <110> uniaxial tensile stress on some of the inversion layer properties of (100) silicon n-channel MOSFETs. Quantum mechanical calculations are performed assuming Airy function approximation holds. Uniaxial tensile strain lowers the eigen-energies and increases the occupation of the ground state. Average inversion layer penetration is also decreased. The change in the surface electric field ...


Impact of uniaxial strain on channel backscattering characteristics and drain current variation for nanoscale PMOSFETs

2009 Symposium on VLSI Technology, 2009

Using an improved temperature-dependent method, this paper clarifies that channel backscattering of nanoscale PMOSFETs can be reduced by the uniaxially compressive strain. For the first time, the electrostatic potential of the source-channel junction barrier has been experimentally characterized with strain and gate voltage dependence. We further demonstrate that the strain technology can improve the drain current variation as well as ...


More Xplore Articles

Educational Resources on Uniaxial strain

Back to Top

IEEE-USA E-Books

  • Effect of cyclic stress on Terfenol-D

    A rod of grain oriented Terfenol-D has been subjected to cyclic uniaxial stress of /spl plusmn/100 MPa about a mean preload of /spl sim/120 MPa applied along the <112> grain growth axis. The magnetostrictive strain and d-coefficient measured under uniaxial preload and quasi static magnetic fields are shown to increase after the initial 10/sup 6/ cycles of stress. The characterisation of the magnetomechanical behaviour from resonance analyses indicates a slight hardening of the material after /spl sim/6/spl times/10/sup 7/ cycles and that to regain optimum magnetomechanical coupling, the bias preload and DC bias fields require adjustment in keeping with the effects of the stress cycling. These initial results indicate that magnetostrictive devices constructed from Terfenol-D offer a significant advantage compared with ceramic (PZT) actuators when applied in load bearing situations.

  • Crystal-direction dependence of uniaxial tensile strain in ultra-thin SOI

    Strain engineering by lateral relaxation is a powerful method for generating large biaxial and uniaxial silicon strain in an SOI structure. By choosing the crystal direction of the features, one should be able to control not only the mobility enhancement, but also maximize the uniaxial strain. Uniaxial tensile strain as large as 1.0% in the (100) direction can be achieved in 10 nm silicon films.

  • Nanowire FETs

    In this work, we study 2.1nm-diameter uniaxial strained Si gate-all-around nanowire field-effect transistors, focusing on the electron mobility and the variability due to random discrete dopants (RDDs). Firstly, we extract the electron effective masses under various strains from Density Functional Theory (DFT) simulations. Secondly, we present the impact of the strain on the electron mobility in the Si nanowire using the Kubo-Greenwood formalism with a set of multi-subband phonon, surface roughness, and ionized impurity scattering mechanisms. Finally, we perform quantum transport simulations to investigate the effect of RDD on the threshold voltage and ON-state current variation.

  • Inversion layer properties of 〈110〉 uniaxially strained silicon n-channel MOSFETs

    This paper discusses the influence of <110> uniaxial tensile stress on some of the inversion layer properties of (100) silicon n-channel MOSFETs. Quantum mechanical calculations are performed assuming Airy function approximation holds. Uniaxial tensile strain lowers the eigen-energies and increases the occupation of the ground state. Average inversion layer penetration is also decreased. The change in the surface electric field due to strain is insignificant.

  • Impact of uniaxial strain on channel backscattering characteristics and drain current variation for nanoscale PMOSFETs

    Using an improved temperature-dependent method, this paper clarifies that channel backscattering of nanoscale PMOSFETs can be reduced by the uniaxially compressive strain. For the first time, the electrostatic potential of the source-channel junction barrier has been experimentally characterized with strain and gate voltage dependence. We further demonstrate that the strain technology can improve the drain current variation as well as the mismatching properties through the enhanced ballistic efficiency. Moreover, the improvement shows gate length and drain voltage dependence.

  • Physical understandings of si (110) hole mobility in ultra-thin body pFETs by ≪110≫ and ≪111≫ uniaxial compressive strain

    The effects of <110> and <111>-directed uniaxial compressive strain on hole mobility in (110)-oriented ultra-thin body pFETs have been investigated systematically for the first time. It is found that the strain effect in <110>-directed ultra-thin body pFETs is severely degraded due to small change in conduction effective mass and density-of-states reduction. It is also confirmed by measurements and subband structure calculations that <111>-directed ultra-thin body pFET is free from these degradation mechanisms and achieves larger hole mobility enhancement than <110>-directed ultra-thin body pFET, caused by larger effective mass change and smaller density-of- states reduction.

  • Enhanced Carrier-Mobility-Fluctuation Origin Low-Frequency Noise in Uniaxial Strained PMOSFETs

    This letter reports our new findings on the impact of uniaxial strain on the low-frequency-noise characteristics in nanoscale PMOSFETs. It is found that the normalized drain current noise of the strained device in the high-gate- overdrive (<i>V</i> <sub>gst</sub>) regime is larger than its control counterpart. In addition, the enhanced carrier-mobility-fluctuation origin 1/<i>f</i> noise for the strained device in the high-|<i>V</i> <sub>gst</sub>| regime indicates that the carrier mobility in the strained device is more phonon limited, which represents an intrinsic strain effect on the low- frequency noise.

  • Unexpected electronic properties of strained La/sub 1.85/Sr/sub 0.15/CuO/sub 4/ epitaxial films

    Surprising results on electronic properties of strained thin La/sub 1.85/Sr/sub 0.15/CuO/sub 4/ epitaxial films are reported. We report on the very first angle resolved photoemission (ARPES) measurements of the dispersion on in-situ grown, in-plane compressed T-phase LSCO films (showing T/sub C/ enhancement). The data show clear band crossing, implying that in-plane compressive strain at constant doping results in the suppression of the saddle point, changing the topology of the Fermi surface from hole-like to electron- like.

  • Third Order Elastic and Piezoelectric Constants of CuCl<sup>+</sup>

    None

  • Mobility-Enhanced CMOS Technologies Using Strained Si/SiGe/Ge Channels

    It has been well recognized that continuous increase in drive current is mandatory for successive growth of future CMOS LSIs. This means that the mobility enhancement has to keep being pursued in each technology node. For this purpose, a variety of local strain and global strain techniques have recently been developed and some of them have already been implemented in real products as presented in T. Ghani et al. (2003). This paper reports our recent approaches on the development of mobility-enhanced device structures based on the global strain substrates



Standards related to Uniaxial strain

Back to Top

No standards are currently tagged "Uniaxial strain"


Jobs related to Uniaxial strain

Back to Top