Conferences related to Stress

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2023 Annual International Conference of the IEEE Engineering in Medicine & Biology Conference (EMBC)

The conference program will consist of plenary lectures, symposia, workshops and invitedsessions of the latest significant findings and developments in all the major fields of biomedical engineering.Submitted full papers will be peer reviewed. Accepted high quality papers will be presented in oral and poster sessions,will appear in the Conference Proceedings and will be indexed in PubMed/MEDLINE.


2021 IEEE Photovoltaic Specialists Conference (PVSC)

Photovoltaic materials, devices, systems and related science and technology


2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe)

Energy conversion and conditioning technologies, power electronics, adjustable speed drives and their applications, power electronics for smarter grid, energy efficiency,technologies for sustainable energy systems, converters and power supplies


2020 IEEE Applied Power Electronics Conference and Exposition (APEC)

APEC focuses on the practical and applied aspects of the power electronics business. Not just a power designer’s conference, APEC has something of interest for anyone involved in power electronics including:- Equipment OEMs that use power supplies and converters in their equipment- Designers of power supplies, dc-dc converters, motor drives, uninterruptable power supplies, inverters and any other power electronic circuits, equipments and systems- Manufacturers and suppliers of components and assemblies used in power electronics- Manufacturing, quality and test engineers involved with power electronics equipment- Marketing, sales and anyone involved in the business of power electronic- Compliance engineers testing and qualifying power electronics equipment or equipment that uses power electronics


2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


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Periodicals related to Stress

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Advanced Packaging, IEEE Transactions on

The IEEE Transactions on Advanced Packaging has its focus on the modeling, design, and analysis of advanced electronic, photonic, sensors, and MEMS packaging.


Aerospace and Electronic Systems Magazine, IEEE

The IEEE Aerospace and Electronic Systems Magazine publishes articles concerned with the various aspects of systems for space, air, ocean, or ground environments.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Biomedical Engineering, IEEE Transactions on

Broad coverage of concepts and methods of the physical and engineering sciences applied in biology and medicine, ranging from formalized mathematical theory through experimental science and technological development to practical clinical applications.


Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


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Most published Xplore authors for Stress

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Xplore Articles related to Stress

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Raman spectroscopy measurement of local stress induced by LOCOS and trench structures in the silicon substrate

ESSDERC '93: 23rd European solid State Device Research Conference, 1993

Micro-Raman spectroscopy is used to study local mechanical stress at trench- LOCOS structures. At the trench edges the stress is compressive. The local stress surrounding trench and LOCOS is highly affected when both structures are located close to each other. The stress picture obtained from both planar and cross-sectional experiments agrees very well with stress predicted by finite element calculations.


Tracking strain in ventricular assist devices

Proceedings of the Second Joint 24th Annual Conference and the Annual Fall Meeting of the Biomedical Engineering Society] [Engineering in Medicine and Biology, 2002

Implantable ventricular assist devices offer hope for many heart attack victims waiting for donor hearts. These autonomous devices are intended as a medium-term bridge to transplant, or, if enough progress is made, even as a permanent clinical solution. The design challenges are: limiting the shear stress, avoiding thrombus formation, and maintaining pump efficiency. High shear stresses are particularly evident in ...


Control of residual stress of polysilicon thin films by heavy doping in surface micromachining

TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers, 1991

Control of residual stress of polysilicon thin films for use in surface micromachining was experimentally studied. It was found that stress can be controlled by fairly heavy doping and subsequent annealing. Polysilicon films with lower than 50 ppm tensile and -50 ppm compressive strain were fabricated as measured from micromachined test structures. Very low tensile strains of less than 100 ...


Characterisation of Mechanical Stress in Advanced PBL Isolation

ESSDERC '94: 24th European Solid State Device Research Conference, 1994

The characterisation of 1D and 2D stress distributions in poly-buffered LOCOS (PBL) isolation structures for using Micro-Raman mapping with TEM measurements of topography is presented. Measurements have been made on devices produced within the development of 0.35 μm cmos isolation modules.


Non-contact Stress Measurement of Rail Steel Using a Magnetic Anisotropy Sensor

IEEE Translation Journal on Magnetics in Japan, 1990

The Magnetic Anisotropy Sensors (MAS) is based on the fact that when stress is applied, the magnetic anisotropy of steel materials changes. MAS employs a small, light probe and is capable of non-contact stress measurement. This paper describes experimental results for non-contact stress measurements of rail steel. A specimen was cut from an actual 60 kg steel rail, and tensile ...


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Educational Resources on Stress

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IEEE-USA E-Books

  • Raman spectroscopy measurement of local stress induced by LOCOS and trench structures in the silicon substrate

    Micro-Raman spectroscopy is used to study local mechanical stress at trench- LOCOS structures. At the trench edges the stress is compressive. The local stress surrounding trench and LOCOS is highly affected when both structures are located close to each other. The stress picture obtained from both planar and cross-sectional experiments agrees very well with stress predicted by finite element calculations.

  • Tracking strain in ventricular assist devices

    Implantable ventricular assist devices offer hope for many heart attack victims waiting for donor hearts. These autonomous devices are intended as a medium-term bridge to transplant, or, if enough progress is made, even as a permanent clinical solution. The design challenges are: limiting the shear stress, avoiding thrombus formation, and maintaining pump efficiency. High shear stresses are particularly evident in mechanical biomedical devices; they cause primarily hemolysis of red blood cells, depending on dose and time of exposure. The distribution of the shear stresses in the complex flow in a rotary blood pump, as well as the measure of the blood cells' exposure to these pathological conditions, are difficult to obtain. Device designers often must decide the details of pump configuration guided only by the global, time- and space-averaged, indicators of the shear stress inside the pump, such as hemoglobin release measurements made on the exiting blood stream. Here we compute the three-dimensional, unsteady blood flow in a detailed model of the implantable centrifugal blood pumps being developed at the Baylor College of Medicine by treating blood as a Newtonian liquid. The scalar stress measures currently used for analyzing computational results do not distinguish tensile and compressive stresses, and do not differentiate persistent straining-which is expected to yield hemolysis-from cyclic straining-which should affect blood cells to a much lower extent. We are examining tensor measures of accumulated strain experienced by typical individual blood cells and we are correlating such measures with available hemolysis data, with the goal of deriving better blood damage indicators from the computed flow field.

  • Control of residual stress of polysilicon thin films by heavy doping in surface micromachining

    Control of residual stress of polysilicon thin films for use in surface micromachining was experimentally studied. It was found that stress can be controlled by fairly heavy doping and subsequent annealing. Polysilicon films with lower than 50 ppm tensile and -50 ppm compressive strain were fabricated as measured from micromachined test structures. Very low tensile strains of less than 100 ppm were obtained with As/sup +/ implantation doses on the order of 1-3*10/sup 16/ cm/sup -2/ and annealing temperatures of 1050 degrees C. Strains as low as 15-30 ppm were achieved. The problem of sticking of structures to the substrate after wet etching of sacrificial oxide was observed and circumvented.<<ETX>>

  • Characterisation of Mechanical Stress in Advanced PBL Isolation

    The characterisation of 1D and 2D stress distributions in poly-buffered LOCOS (PBL) isolation structures for using Micro-Raman mapping with TEM measurements of topography is presented. Measurements have been made on devices produced within the development of 0.35 μm cmos isolation modules.

  • Non-contact Stress Measurement of Rail Steel Using a Magnetic Anisotropy Sensor

    The Magnetic Anisotropy Sensors (MAS) is based on the fact that when stress is applied, the magnetic anisotropy of steel materials changes. MAS employs a small, light probe and is capable of non-contact stress measurement. This paper describes experimental results for non-contact stress measurements of rail steel. A specimen was cut from an actual 60 kg steel rail, and tensile and compressive stresses were applied using a fatigue testing machine. Good linearity of the MAS output voltage to the applied stress was observed over tensile stresses between 0 and 160 MPa when demagnetization was employed.

  • The influence of stress on surface Barkhausen noise generation in pipeline steels

    None

  • Automated stress control of electroplated nickel-phosphorus alloy

    A process for automatic control of internal stress in electroplated nickel- phosphorus alloy using controlled current electrodeposition on a conductive substrate from a single electroplating bath yields a multiple-layered coating. This multi-layered deposit is a sequence of two alternating layers. One of these layers is a phosphorus-rich coating which is characterized by compressive stresses while the other layer is a tensile-stressed coating of low phosphorus content. The apparatus employed to achieve this automated control of internal stress includes a non-contact linear sensor for monitoring stresses in the coating and a programmable power supply for the current source.

  • Modeling of stress effects on magnetic hysteresis and Barkhausen emission using an integrated hysteretic-stochastic model

    Summary form only given. An integrated magnetic hysteresis and Barkhausen effect (BE) model has been developed which provides a coherent description of the effects of stress on hysteresis loop and BE signals. To verify the model predictions hysteresis loops and BE signals were measured and simulated for steel under various tensile and compressive stresses within the elastic limit. BE signal was calculated based on the hysteretic-stochastic process model of domain wall dynamics, which has been recently developed for description of BE signal over the entire hysteresis cycle in which the permeability varies with applied field and stress. The BE signal voltage, which corresponds to the rate of irreversible changes in magnetization I/spl dot//sub irr/ is governed by d I/spl dot//sub 1rr//dt = /spl chi//sub 1rr///spl tau/ ((dH/sub a//dt) - (dH/sub o//dt)) /spl dot//sub 1rr///spl tau/, where H/sub a/ is the applied field, H/sub C/ is the local pinning field, /spl chi/'/sub 1rr/ is the irreversible susceptibility and /spl tau/ is proportional to /spl chi/'/sub 1rr/. An applied stress /spl sigma/ was treated as an effective field operating through the magnetostriction /spl lambda/. In this approach the stress effect on BE signal can be described via /spl chi/'/sub 1rr/ which is given by /spl chi/'/sub 1rr/ = /spl chi//sub 0/ (1 + (M/sub a/ - M/sub 1rr/)/(k/spl delta///spl mu//sub 0/) [/spl alpha/ + (3/spl sigma//2/spl mu//sub 0/)(/spl part//sup 2/ /spl lambda///spl part/M/sup 2/)](M/sub a/ - M/sub 1rr/)). The simulated hysteresis loop parameters such as the coercivity and remanence and the rms BE signal voltage were found to exhibit a stress dependence consistent with that of the experimental data, indicating that the integrated model can be used to describe the trends in the behavior of both hysteresis loop and BE signal as a function of stress.

  • Superior n-MOSFET performance by optimal stress design

    In this article we present detailed stress simulation characterization of the 3-D boundary effects and show that the high-performance n FET can be achieved by the ultra-high-stress CESL stressor and optimal geometric structure design. A symmetric structure which results in the biaxial- like stress is favored for n FET in terms of I<sub>on</sub>, B<sub>sat</sub> r<sub>sat</sub>, and v<sub>nj</sub>. The comprehensive study helps the future device circuit design and remains valid for future technology node of 22 nm.

  • Superior n-MOSFET Performance by Optimal Stress Design

    The high-performance n-FET is achieved by ultra- high-stress contact-etch- stop-layer stressor and optimal design of device dimensions. The biaxial-like stress resulting from a high symmetry in device dimension (gate width/gate length ratio is close to one) has the better performance in terms of I<sub>on</sub> enhancement, ballistic efficiency, and injection velocity. The multichannel device with a smaller gate width/gate length ratio is proposed to enhance the device performance in the circuit design for the n-FET. The characteristics of the detailed stress simulation and the ballistic-transport measurement reported in this letter suggest that these results remain valid for ballistic-transport devices with 10-20-nm gate length. The stress distribution with different device dimensions was simulated by 3-D finite- element mechanical-stress simulation, and the mobility, ballistic efficiency, and injection velocity were calculated theoretically based on stress characteristics.



Standards related to Stress

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American National Standard Test Procedure for AC High-Voltage Circuit Breakers Rated on a Symmetrical Current Basis Amendment 1: Capacitance Current Switching

The scope of PC37.09a is to incorporate IEC 62271-100 capacitance current switching treatment into the circuit breaker test code. This applies to Circuit Breakers above 1000V ac.