Conferences related to Strain

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2023 Annual International Conference of the IEEE Engineering in Medicine & Biology Conference (EMBC)

The conference program will consist of plenary lectures, symposia, workshops and invitedsessions of the latest significant findings and developments in all the major fields of biomedical engineering.Submitted full papers will be peer reviewed. Accepted high quality papers will be presented in oral and poster sessions,will appear in the Conference Proceedings and will be indexed in PubMed/MEDLINE.


2020 IEEE 70th Electronic Components and Technology Conference (ECTC)

ECTC is the premier international conference sponsored by the IEEE Components, Packaging and Manufacturing Society. ECTC paper comprise a wide spectrum of topics, including 3D packaging, electronic components, materials, assembly, interconnections, device and system packaging, optoelectronics, reliability, and simulation.


2020 IEEE International Conference on Plasma Science (ICOPS)

IEEE International Conference on Plasma Science (ICOPS) is an annual conference coordinated by the Plasma Science and Application Committee (PSAC) of the IEEE Nuclear & Plasma Sciences Society.


2020 IEEE International Conference on Robotics and Automation (ICRA)

The International Conference on Robotics and Automation (ICRA) is the IEEE Robotics and Automation Society’s biggest conference and one of the leading international forums for robotics researchers to present their work.


2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


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Periodicals related to Strain

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Aerospace and Electronic Systems Magazine, IEEE

The IEEE Aerospace and Electronic Systems Magazine publishes articles concerned with the various aspects of systems for space, air, ocean, or ground environments.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Automatic Control, IEEE Transactions on

The theory, design and application of Control Systems. It shall encompass components, and the integration of these components, as are necessary for the construction of such systems. The word `systems' as used herein shall be interpreted to include physical, biological, organizational and other entities and combinations thereof, which can be represented through a mathematical symbolism. The Field of Interest: shall ...


Biomedical Engineering, IEEE Transactions on

Broad coverage of concepts and methods of the physical and engineering sciences applied in biology and medicine, ranging from formalized mathematical theory through experimental science and technological development to practical clinical applications.


Circuits and Systems for Video Technology, IEEE Transactions on

Video A/D and D/A, display technology, image analysis and processing, video signal characterization and representation, video compression techniques and signal processing, multidimensional filters and transforms, analog video signal processing, neural networks for video applications, nonlinear video signal processing, video storage and retrieval, computer vision, packet video, high-speed real-time circuits, VLSI architecture and implementation for video technology, multiprocessor systems--hardware and software-- ...


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Most published Xplore authors for Strain

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Xplore Articles related to Strain

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Crystal-direction dependence of uniaxial tensile strain in ultra-thin SOI

2004 IEEE International SOI Conference (IEEE Cat. No.04CH37573), 2004

Strain engineering by lateral relaxation is a powerful method for generating large biaxial and uniaxial silicon strain in an SOI structure. By choosing the crystal direction of the features, one should be able to control not only the mobility enhancement, but also maximize the uniaxial strain. Uniaxial tensile strain as large as 1.0% in the (100) direction can be achieved ...


The effect of a plastic strain on the coercivity of polycrystalline Fe-Ni alloys under applied tensile stress

IEEE Transactions on Magnetics, 1970

None


Switching of magnetostrictive micro-dot arrays by mechanical strain

2005 IEEE International Magnetics Conference (INTERMAG), 2005

CoFeBSi and FeCo magnetostrictive micro-and nano-dot arrays are fabricated on Si/sub 3/N/sub 4/ membranes with different diameters (50 to 300 /spl mu/m) by combining MEMS fabrication processes and thin film technology. Compressive or tensile mechanical strain is introduced in order to observe the inverse magnetostriction effect or the Villary effect. Magnetic force microscopy and MOKE measurements are employed in order ...


Piezoresistivity (with uniaxial strain) in nanocrystalline films of rare-earth manganites

2006 IEEE Conference on Emerging Technologies - Nanoelectronics, 2006

We present a study of the piezoresistivity in nanostructured polycrystalline films of La<inf>0.67</inf>Ca<inf>0.33</inf>MnO<inf>3</inf>and La<inf>0.67</inf>Sr<inf>0.33</inf>MnO<inf>3</inf>grown on oxidized Si


Stress engineering in (100) and (110) nMOSFETs

2008 9th International Conference on Solid-State and Integrated-Circuit Technology, 2008

The physical mechanisms of electron mobility (¿<sub>e</sub>) enhancement by uniaxial stress are investigated for nMOSFETs with surface orientations of (100) and (110). From full band calculations, uniaxial-stress-induced split of conduction band edge (¿E<sub>C</sub>) and effective mass change (¿m*) are quantitatively evaluated. It is experimentally and theoretically demonstrated that the energy surface of 2-fold valleys in Si (100) nMOSFETs is warped ...


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Educational Resources on Strain

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IEEE-USA E-Books

  • Crystal-direction dependence of uniaxial tensile strain in ultra-thin SOI

    Strain engineering by lateral relaxation is a powerful method for generating large biaxial and uniaxial silicon strain in an SOI structure. By choosing the crystal direction of the features, one should be able to control not only the mobility enhancement, but also maximize the uniaxial strain. Uniaxial tensile strain as large as 1.0% in the (100) direction can be achieved in 10 nm silicon films.

  • The effect of a plastic strain on the coercivity of polycrystalline Fe-Ni alloys under applied tensile stress

    None

  • Switching of magnetostrictive micro-dot arrays by mechanical strain

    CoFeBSi and FeCo magnetostrictive micro-and nano-dot arrays are fabricated on Si/sub 3/N/sub 4/ membranes with different diameters (50 to 300 /spl mu/m) by combining MEMS fabrication processes and thin film technology. Compressive or tensile mechanical strain is introduced in order to observe the inverse magnetostriction effect or the Villary effect. Magnetic force microscopy and MOKE measurements are employed in order to investigate the strain induced switching properties and resolve the domain structure of the amorphous micro- and nano-dot arrays. The local strain distribution of the various membrane structures is obtained by finite-element method. The results of the simulations are then compared to the experimental results.

  • Piezoresistivity (with uniaxial strain) in nanocrystalline films of rare-earth manganites

    We present a study of the piezoresistivity in nanostructured polycrystalline films of La<inf>0.67</inf>Ca<inf>0.33</inf>MnO<inf>3</inf>and La<inf>0.67</inf>Sr<inf>0.33</inf>MnO<inf>3</inf>grown on oxidized Si

  • Stress engineering in (100) and (110) nMOSFETs

    The physical mechanisms of electron mobility (¿<sub>e</sub>) enhancement by uniaxial stress are investigated for nMOSFETs with surface orientations of (100) and (110). From full band calculations, uniaxial-stress-induced split of conduction band edge (¿E<sub>C</sub>) and effective mass change (¿m*) are quantitatively evaluated. It is experimentally and theoretically demonstrated that the energy surface of 2-fold valleys in Si (100) nMOSFETs is warped due to uniaxial &lt;110&gt; stress, resulting in lighter m<sub>T</sub> of 2-fold valleys parallel to the stress. By using calculated ¿E<sub>C</sub> and ¿m*, experimental ¿<sub>e</sub> enhancement is accurately modeled for biaxial, uniaxial &lt;100&gt;, and uniaxial &lt;110&gt; stress for (100) and (110) nMOSFETs. The limits of ¿<sub>e</sub> enhancement are also discussed.

  • Spontaneous ordering, strain control and mutlifunctionality in vertical nanocomposite heteroepitaxial films

    Two-phase nanocomposite heteroepitaxial films with vertical microstructures hold great promise for various (multi)functional (e.g. multiferroic) electronic device applications. With the aim of creating addressable arrays, it is necesary to form spontaneously ordered structures over large areas. However, such structures have not, so far, been demonstrated. We have recently shown remarkable spontaneously ordered phase assemblies and find that these structures form concomitantly with two-dimensional vertical strain control, i.e. strain in the two phases is controlled along the vertical interface between them rather than being influenced by the substrate [1]. In this extended abstract we report briefly on our findings.

  • Micromagnetic Surface Measurements For Evaluation Of Surface Modifications Due To Cyclic Stress

    None

  • Transition from multiple macro-cracking to multiple micro-cracking in cementitious composites

    This paper presents an experimental study of the possibility of transition from multiple macro-cracking to multiple micro-cracking in cementitious composites. Conventional polyvinyl alcohol fiber reinforced cementitious composites normally exhibit macroscopic strain-hardening and multiple cracking after the first cracks appear. However, the individual crack width at the saturated stage is normally 60 to 80 urn. In the current study, the effect of fine aggregate size on the cracking performance, especially the individual crack width in the strain-hardening stage was studied by bending tests. The results show that the individual crack widths can be reduced from 60–80 μm to 10–30 0–30 μm by modifying the particle size of the fine aggregates used in the composites.

  • Strained Pt Schottky Diodes on n-type Si and Ge

    In summary, the reduction of the Schottky-barrier height for the n-type semiconductor under external mechanical strain is observed. This reduction is shown to originate from the reduction of conduction band edge. The boundary condition under uniaxial strain technology is stress-free along the direction perpendicular to uniaxial stress obtain the reasonable agreement between data and theoretical calculation

  • Polarization insensitive amplification at 1.5/spl mu/m wavelength using tensile strained multiple quantum well structures

    For 1.5/spl mu/m wavelength, a high gain of 15 dB under polarization insensitive operation has been demonstrated by a newly developed semiconductor optical amplifier with a small tensile strain (0.2%) introduced to 8 nm-thick quantum wells. TE and TM mode gain characteristics have been investigated as a function of device length and strain.



Standards related to Strain

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IEEE Standard for the Testing of Overhead Transmission and Distribution Line Hardware

This standard will cover the testing and acceptance requirements for overhead transmission and distribution line hardware.