Conferences related to Spin valves

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2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2020 IEEE International Magnetic Conference (INTERMAG)

INTERMAG is the premier conference on all aspects of applied magnetism and provides a range of oral and poster presentations, invited talks and symposia, a tutorial session, and exhibits reviewing the latest developments in magnetism.


2020 IEEE/ASME International Conference on Advanced Intelligent Mechatronics (AIM)

The scope of the 2020 IEEE/ASME AIM includes the following topics: Actuators, Automotive Systems, Bioengineering, Data Storage Systems, Electronic Packaging, Fault Diagnosis, Human-Machine Interfaces, Industry Applications, Information Technology, Intelligent Systems, Machine Vision, Manufacturing, Micro-Electro-Mechanical Systems, Micro/Nano Technology, Modeling and Design, System Identification and Adaptive Control, Motion Control, Vibration and Noise Control, Neural and Fuzzy Control, Opto-Electronic Systems, Optomechatronics, Prototyping, Real-Time and Hardware-in-the-Loop Simulation, Robotics, Sensors, System Integration, Transportation Systems, Smart Materials and Structures, Energy Harvesting and other frontier fields.


2019 IEEE SENSORS

The IEEE Sensors Conference is a forum for presentation, discussion, and exchange of state-of-the art information including the latest research and development in sensors and their related fields. It brings together researchers, developers, and practitioners from diverse fields including international scientists and engineers from academia, research institutes, and companies to present and discuss the latest results in the general field of sensors.

  • 2018 IEEE SENSORS

    The IEEE Sensors Conference is a forum for presentation, discussion, and exchange of state -of-the art information including the latest research and development in sensors and their relatedfields. It brings together researchers, developers, and practitioners from diverse fields includinginternational scientists and engineers from academia, research institutes, and companies topresent and discuss the latest results in the general field of sensors.

  • 2017 IEEE SENSORS

    The IEEE Sensors Conference is a forum for presentation, discussion, and exchange of state -of-the art information including the latest research and development in sensors and their relatedfields. It brings together researchers, developers, and practitioners from diverse fields includinginternational scientists and engineers from academia, research institutes, and companies topresent and discuss the latest results in the general field of sensors.

  • 2016 IEEE Sensors

    The IEEE Sensors Conference is a forum for presentation, discussion, and exchange of state -of-the art information including the latest research and development in sensors and their related fields. It brings together researchers, developers, and practitioners from diverse fields including international scientists and engineers from academia, research institutes, and companies to present and discuss the latest results in the general field of sensors.

  • 2015 IEEE Sensors

    The IEEE Sensors Conference is a forum for presentation, discussion, and exchange of state -of-the art information including the latest research and development in sensors and their related fields. It brings together researchers, developers, and practitioners from diverse fieldsincluding international scientists and engineers from academia, research institutes, and companies topresent and discuss the latest results in the general field of sensors.

  • 2014 IEEE Sensors

    The IEEE Sensors Conference is a forum for presentation, discussion, andexchange of state -of-the art information including the latest research and development in sensors andtheir related fields. It brings together researchers, developers, and practitioners from diverse fieldsincluding international scientists and engineers from academia, research institutes, and companies topresent and discuss the latest results in the general field of sensors.

  • 2013 IEEE Sensors

    The IEEE SENSORS Conference is a forum for presentation, discussion, and exchange of state -of-the art information including the latest research and development in sensors and their related fields. It brings together researchers, developers, and practitioners from diverse fields including international scientists and engineers from academia, research institutes, and companies to present and discuss the latest results in the general field of sensors.

  • 2012 IEEE Sensors

    The IEEE Sensors Conference is a forum for presentation, discussion, and exchange of state-of-the art information including the latest research and development in sensors and their related fields. It brings together researchers, developers, and practitioners from diverse fields including international scientists and engineers from academia, research institutes, and companies to present and discuss the latest results in the general field of sensors.

  • 2011 IEEE Sensors

    The IEEE Sensors Conference is a forum for presentation, discussion, and exchange of state-of-the art information including the latest research and development in sensors and their related fields. It brings together researchers, developers, and practitioners from diverse fields including international scientists and engineers from academia, research institutes, and companies to present and discuss the latest results in the general field of sensors. IEEE SENSORS 2011 will include keynote addresses by eminen

  • 2010 IEEE Sensors

    The IEEE SENSORS 2010 Conference is a forum for state-of-the-art presentations on sensors and related topics covering from theory to application, device to system, modeling to implementation and from macro/nano to scale.

  • 2009 IEEE Sensors

    IEEE Sensors Conference 2009 is intended to provide a common forum for researchers, scientists, engineers and practitioners throughout the world to present their latest research findings, ideas, developments and applications in the area of sensors and sensing technology. IEEE Sensors Conference 2009 will include keynote addresses by eminent scientists as well as special, regular and poster sessions.

  • 2008 IEEE Sensors

    IEEE SENSORS 2008 solicits original and state-of-the-art contributions to sensors and related topics, covering from theory to application, from device to system, from modeling to implementation, and from macro to micro/nano in scale. Topics of interest include,but are not limitid to: Phenomena, Modeling, and Evaluation (Novel Sensing Principles, Theory and Modeling, Sensors Characterization, Evaluation and Testing, Data Handling and Mining) Chemical and Gas Sensors (Materials, Devices, Electronics N

  • 2007 IEEE Sensors

    IEEE SENSORS 2007 solicits original and state-of-the-art contributions to sensors and related topics, covering from theory to application, from device to system, from modeling to implementation, and from macro to micro/nano in scale.

  • 2006 IEEE Sensors

  • 2005 IEEE Sensors

  • 2004 IEEE Sensors

  • 2003 IEEE Sensors

  • 2002 IEEE Sensors


2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC)

Covers all electronic materials and devices fields that involve nanotechnology

  • 2017 IEEE 12th Nanotechnology Materials and Devices Conference (NMDC)

    This conference serves as a perfect platform on which scientists and engineers can present and highlight some of the key advances in the research topics relevant to nanoscience and nanotechnology.

  • 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC)

    IEEE NMDC 2016 aims to foster communication between physicists, chemists, microbiologists and engineers from academics and industry, interested in nanodevices and nanostructured materials, advanced preparation techniques, new material properties, standards and safety issues of nanotechnology, in computer simulations and theoretical work. Interdisciplinary exchange between scientists and contributions from industrial researchers will stimulate gather knowledge and help inspire a new perspective in industrial applications on this exciting area.

  • 2015 IEEE Nanotechnology Materials and Devices Conference (NMDC)

    IEEE-NMDC 2015 is the 10th Nanotechnology Materials and Devices Conference. Published papers in the conference will be indexed at IEEExplore. A contest for the best paper award will be held and awards will be given at the end of the conference. Authors of the best papers of each track will be invited to submit their extended article version to: IEEE Transactions on Nanobioscience, IEEE Nanotechnology Magazine, and IEEE Transaction on Nanotechnology.

  • 2014 IEEE 9th Nanotechnology Materials and Devices Conference (NMDC)

    IEEE-NMDC 2014 wants to be a forum of discussion about nanotechnology, with a special focus on materials and devices. Topics:-Graphene and carbon nanotubes based materials and devices-Materials and devices for nanoelectronics-Materials and devices for energy and environmental applications-Nanostructures for future generation solar cells-Ion beam synthesis and modification of nanostructures-Advanced characterization of nanomaterials and nanostructures-Modeling and simulation of nanomaterials, structures, and devices-Metamaterials and plasmonic devices-Photonic materials and devices-Organic semiconductor materials, devices and applications-Nanostructures of oxide semiconductor materials-III-V semiconductors nanomaterials-Nanostructures for water purification-Nanomaterials and devices for biomedical applications-Standards and safety issues of nanotechnology-Fundamentals and applications of nanotubes, nanowires, quantum dots and other low dimensional materials

  • 2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC)

  • 2012 IEEE 7th Nanotechnology Materials and Devices Conference (NMDC)

    Graphene and Nanotube Based Materials and Devices; MEMS/NEMS for Bio-Nanotechnology; Characterization and Simulation of Nanomaterials and Nanostructures; Materials and Devices for Nanoelectronics, Nano-Optics; Materials and Devices for Energy and Environmental Applications.

  • 2011 IEEE Nanotechnology Materials and Devices Conference (NMDC)

    NMDC aims to develop critical assessment of existing work and future directions in nanotechnology research including nanomaterials and fabrications, nanoelectronics, nanophotonics, devices, and integration. This conference will bring together key researchers from every sector in the nanotechnology research field, with a special focus on materials and devices.

  • 2010 IEEE Nanotechnology Materials and Devices Conference (NMDC)

    NMDC aims to develop critical assessment of existing work and future directions in nanotechnology research including nanomaterials and fabrications, nanoelectronics, nanophotonics, devices, and integration. This conference will bring together key researchers from all over the world and from every sector of academy and industry in the nanotechnology research field, with a special focus on materials and devices.

  • 2009 IEEE Nanotechnology Materials and Devices Conference (NMDC)

    NMDC aims to develop critical assessment of existing work and future directions in nanotechnology research including nanomaterials and fabrications, nanoelectronics, nanophotonics, devices, and integration. This conference will bring together key researchers from all over the world and from every sector of academy and industry in the nanotechnology research field, with a special focus on materials and devices.

  • 2008 2nd Nanotechnology Materials and Devices Conference (NMDC)

    NMDC aims to develop critical assessment of existing work and future directions in nanotechnology research including nanomaterials and fabrications, nanoelectronics, nanophotonics, devices, and integration. This conference will bring together key researchers from all over the world and from every sector of academy and industry in the nanotechnology research field, with a special focus on materials and devices.

  • 2006 Nanotechnology Materials and Devices Conference (NMDC)


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Periodicals related to Spin valves

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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Magnetics, IEEE Transactions on

Science and technology related to the basic physics and engineering of magnetism, magnetic materials, applied magnetics, magnetic devices, and magnetic data storage. The Transactions publishes scholarly articles of archival value as well as tutorial expositions and critical reviews of classical subjects and topics of current interest.


Microelectromechanical Systems, Journal of

A journal covering Microsensing, Microactuation, Micromechanics, Microdynamics, and Microelectromechanical Systems (MEMS). Contains articles on devices with dimensions that typically range from macrometers to millimeters, microfabrication techniques, microphenomena; microbearings, and microsystems; theoretical, computational, modeling and control results; new materials and designs; tribology; microtelemanipulation; and applications to biomedical engineering, optics, fluidics, etc. The Journal is jointly sponsored by the IEEE Electron Devices ...


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Most published Xplore authors for Spin valves

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Xplore Articles related to Spin valves

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Spin-valve RAM cell

IEEE Transactions on Magnetics, 1995

This paper presents the design and the characteristics of a nonvolatile memory cell using giant magneto-resistance effects. Unlike other magnetic memory cells, the present cell design exploits the full /spl Delta/R of the spin valve material. A dc voltage difference between the two cell states of 30 mV range has been realized on a cell stripe only 6-microns long, making ...


Spin-valve structures with Co-Tb-based multilayers

IEEE Transactions on Magnetics, 2002

The influence of the thickness of layers on magnetic properties of {Co-Tb}/sub n/, {Co-Tb}/sub n/-Co, and {Co-Tb}/sub n/-Co-Cu-Co films was investigated. The dependencies of magnetic hysteresis and magnetoresistive properties of {Co(1 nm)-Tb(1 nm)}n-Co(5 nm)-Cu(L/sub Cu/)-Co(5 nm) structures on the thickness of the {Co-Tb}/sub n/ layer and Cu spacer were obtained. The possibility of creating of spin-valve structures based of multilayered ...


On the ferromagnetic interlayer coupling in exchange-biased spin-valve multilayers

IEEE Transactions on Magnetics, 1995

The ferromagnetic interlayer coupling in sputter-deposited permalloy/copper/permalloy exchange-biased spin valve multilayers has been measured as a function of the copper thickness. The variation with thickness may, for t/sub cu/>1.7 nm, be analyzed in terms of the Neel model for magnetostatic coupling due to correlated interface roughness, using parameters which are consistent with the observed microstructure.


A GHz spintronic-based RF oscillator

2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers, 2009

In this paper, a first investigation of the use of spintronic based oscillators has been made with very promising results showing a large frequency tuning range (85%), combined with extremely small die size compare to the standard LC VCO (gain factor of 50). The measured output power is -45 dBm, which is two decades higher than published results from spin ...


Determination of the copper layer thickness in spin valves by grazing incidence X-ray fluorescence

IEEE Transactions on Magnetics, 1998

We show that at the standard laboratory wavelength of CuK/spl alpha/ the scattering factors of Cu and Ni/sub 0.8/Fe/sub 0.2/ are identical, thereby making it impossible to distinguish the boundary of the Cu spacer layer in a Cu/permalloy spin valve structure from grazing incidence X-ray reflectivity curves. Use of grazing incidence fluorescence, in conjunction with X-ray reflectivity provides sufficient information ...


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Educational Resources on Spin valves

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IEEE-USA E-Books

  • Spin-valve RAM cell

    This paper presents the design and the characteristics of a nonvolatile memory cell using giant magneto-resistance effects. Unlike other magnetic memory cells, the present cell design exploits the full /spl Delta/R of the spin valve material. A dc voltage difference between the two cell states of 30 mV range has been realized on a cell stripe only 6-microns long, making it compatible with the high-speed sensing schemes presently employed in silicon RAMs. The cell switches states in sub-nanoseconds. Its performance/density is close to that of the static RAM cell.

  • Spin-valve structures with Co-Tb-based multilayers

    The influence of the thickness of layers on magnetic properties of {Co-Tb}/sub n/, {Co-Tb}/sub n/-Co, and {Co-Tb}/sub n/-Co-Cu-Co films was investigated. The dependencies of magnetic hysteresis and magnetoresistive properties of {Co(1 nm)-Tb(1 nm)}n-Co(5 nm)-Cu(L/sub Cu/)-Co(5 nm) structures on the thickness of the {Co-Tb}/sub n/ layer and Cu spacer were obtained. The possibility of creating of spin-valve structures based of multilayered {Co-Tb}/sub n/ films with in-plane magnetic anisotropy was shown.

  • On the ferromagnetic interlayer coupling in exchange-biased spin-valve multilayers

    The ferromagnetic interlayer coupling in sputter-deposited permalloy/copper/permalloy exchange-biased spin valve multilayers has been measured as a function of the copper thickness. The variation with thickness may, for t/sub cu/>1.7 nm, be analyzed in terms of the Neel model for magnetostatic coupling due to correlated interface roughness, using parameters which are consistent with the observed microstructure.

  • A GHz spintronic-based RF oscillator

    In this paper, a first investigation of the use of spintronic based oscillators has been made with very promising results showing a large frequency tuning range (85%), combined with extremely small die size compare to the standard LC VCO (gain factor of 50). The measured output power is -45 dBm, which is two decades higher than published results from spin valves exhibiting similar narrow RF emissions with a dynamic of 120 dBc. Further improvements in the performance of the STO are expected both at the device level (by magnetic multi-layer engineering) and at the system level, through new oscillator and transceiver architectures.

  • Determination of the copper layer thickness in spin valves by grazing incidence X-ray fluorescence

    We show that at the standard laboratory wavelength of CuK/spl alpha/ the scattering factors of Cu and Ni/sub 0.8/Fe/sub 0.2/ are identical, thereby making it impossible to distinguish the boundary of the Cu spacer layer in a Cu/permalloy spin valve structure from grazing incidence X-ray reflectivity curves. Use of grazing incidence fluorescence, in conjunction with X-ray reflectivity provides sufficient information to control the Cu layer thickness. We demonstrate the technique on two spin valves with Cu spacer layers differing in thickness by a factor of 2.5.

  • Thermal degradation of exchange biased films in spin-valves

    As part of an investigation of the thermal stability of spin valve structures, ferromagnetic resonance (FMR) and SQUID magnetometry measurements were made on an exchange biased film, Cu/sub 50/Ni/sub 50/13.1/Cu 2.0/Co 2.1/Ni/sub 80/Fe/sub 20/2.7/Fe/sub 50/Mn/sub 50/9.2/Cu 2.4 nm, as a function of annealing temperature up to 550/spl deg/C. The measurements show an enhancement in the exchange bias surface energy for annealing temperatures above 250/spl deg/C accompanied by increased FMR linewidth and reduced g/sub eff/ which are attributed to increased inhomogeneity of the exchange anisotropy. At temperatures as low as 200/spl deg/C, annealing produces large increases in moment per unit area which are indicative of diffusion.

  • Exchange anisotropy in mbe grown MnPt/NiFe bilayers

    None

  • Effects of initial layer surface roughness on GMR performance of Si/Cu/NiFe/Cu/Co/Cu/NiFe dual spin-valves for MRAM

    The effects of initial layer surface roughness on GMR performance for magnetoresistance random access memory (MRAM) have been investigated as a function of Cu buffer layer thickness and input sputtering power of Si/Cu/NiFe/Cu/Co/Cu/NiFe dual spin valves. The GMR ratio increased up to 4.5% as Cu buffer layer thickness decreased from 30 nm to 5 nm and input sputtering power increased from 50 to 300 W. According to ex-situ atomic force microscopy and Auger electron spectroscopy analyzes, the higher GMR ratio is mainly due to smoother interfacial roughness of the multilayers and smaller oxygen content inside the GMR stacks. It is revealed that the initial layer surface roughness is dependent upon the deposition parameters and film thickness plays a key role in determining the surface roughness and magnetic coupling of subsequent magnetic multilayers.

  • Magnetoresistance In Spin-valves With Antiferromagnetic NiO/CuO/NiO Trilayers

    None

  • Current-perpendicular spin-valves with partially oxidized magnetic layers for ultrahigh-density magnetic recording

    In this paper, by sputter deposition we have prepared single-type CPP spin valves, whose basic structure was buffer/PdPtMn/CoFeB/Ru/CoFeB/Cu/CuFeB/Cu/Cap; the MR ratio of the basic one is 0.6%. The NOLs inserted in the spin valves were formed by the natural oxidization. The resistance was measured using standard four-point probe method at room temperature. Our result show that the GMR enhancement by the NOL strongly depends on the material used, the position, and the thickness. It is also found that the GMR enhancement by the NOL is remarkably material dependent. From the magnetization measurements of the naturally-oxidized thick magnetic layers, we deduced that the oxidized-layer thickness is about 1 mm. These properties of the CPP spin valves with the POML are in an applicable level for the read sensor over 150 Gbit/in/sup 2/ recording density.



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