Conferences related to Spin polarized transport

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2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2020 IEEE International Magnetic Conference (INTERMAG)

INTERMAG is the premier conference on all aspects of applied magnetism and provides a range of oral and poster presentations, invited talks and symposia, a tutorial session, and exhibits reviewing the latest developments in magnetism.


2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)

Science, technology and applications spanning the millimeter-waves, terahertz and infrared spectral regions


2019 IEEE Photonics Conference (IPC)

The IEEE Photonics Conference, previously known as the IEEE LEOS Annual Meeting, offers technical presentations by the world’s leading scientists and engineers in the areas of lasers, optoelectronics, optical fiber networks, and associated lightwave technologies and applications. It also features compelling plenary talks on the industry’s most important issues, weekend events aimed at students and young photonics professionals, and a manufacturer’s exhibition.


2018 9th International Particle Accelerator Conference (IPAC)

Topics cover a complete survey of the field of charged particle accelerator science and technology and infrastructure.


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Periodicals related to Spin polarized transport

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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Automatic Control, IEEE Transactions on

The theory, design and application of Control Systems. It shall encompass components, and the integration of these components, as are necessary for the construction of such systems. The word `systems' as used herein shall be interpreted to include physical, biological, organizational and other entities and combinations thereof, which can be represented through a mathematical symbolism. The Field of Interest: shall ...


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Magnetics, IEEE Transactions on

Science and technology related to the basic physics and engineering of magnetism, magnetic materials, applied magnetics, magnetic devices, and magnetic data storage. The Transactions publishes scholarly articles of archival value as well as tutorial expositions and critical reviews of classical subjects and topics of current interest.


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Most published Xplore authors for Spin polarized transport

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Xplore Articles related to Spin polarized transport

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Conductivity Mismatch and Voltage Dependence of Magnetoresistance in a Semiconductor Spin Injection and Detection Structure

2009 International Conference on Simulation of Semiconductor Processes and Devices, 2009

This work studies the voltage dependence of magnetoresistance in a semiconductor spin injection and detection structure. The voltage dependence of the spin dependent interface resistance at a ferromagnet semiconductor interface is investigated and spin diffusion models are used to evaluate the voltage dependence of magnetoresistance. We find that the voltage dependence of magnetoresistance is similar to that in magnetic tunnel ...


Effect of intervening ferromagnet on spin accumulation in Py/Au/Py spin valve device

2006 IEEE Nanotechnology Materials and Devices Conference, 2006

Nonlocal spin signal is largely dependent on the resistivity of nonmagnetic channel in spin valve devices. Since the resistivity of channel is subjected to change from sample to sample, it is necessary to keep the resistivity as constant as possible. Multiferromagnetic electrodes on single channel are favorable in order to minimize the variation of the resistivity. There is controversial that ...


Mesoscopic and microscopic spin injection, spin precession, spin diffusion and spin transport in semiconductor nanostructures

5th IEEE Conference on Nanotechnology, 2005., 2005

Summary form only given. Presents the author's latest comprehensive theoretical investigations on spin kinetics of semiconductor quantum wells, quantum wires and quantum dots based on microscopic many-body and single particle approaches as well as mesoscopic approach under various conditions, such as temperature, external static electric and magnetic fields, THz radiations, confinement of the structure, strain etc. Both transient and steady-state ...


A Schottky tunnel barrier contact for electrical spin injection from a magnetic metal into a semiconductor

2003 IEEE International Magnetics Conference (INTERMAG), 2003

In this paper, we report here that spin injection from an Fe Schottky contact produces a spin polarization of 32% in an AlGaAs/GaAs quantum well, demonstrate via the Rowell criteria that tunneling is the dominate transport process, and examine the atomic structure of the spin injecting interface with TEM.


Fabrication of High Temperature Superconductor-Colossal Magnetoresistor Spin Injection Devices

1998 IEEE International Magnetics Conference (INTERMAG), 1998

None


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Educational Resources on Spin polarized transport

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IEEE.tv Videos

IEEE Magnetics Distinguished Lecture - Mitsuteru Inoue
ISEC 2013 Special Gordon Donaldson Session: Remembering Gordon Donaldson - 3 of 7 - MEG and ULF-MRI
Materials Challenges for Next-Generation, High-Density Magnetic Recording - Kazuhiro Hono: IEEE Magnetics Distinguished Lecture 2016
Magnetic Materials and Magnetic Devices - Josep Fontcuberta: IEEE Magnetics Distinguished Lecture 2016
IEEE Magnetics Distinguished Lecture - Yoshichika Otani
Nanoscale Magnetism with Picosecond Time Resolution and High Sensitivity - Hendrik Ohldag - IEEE Magnetics Distinguished Lecture
Art, Technology, and Whimsy
A CMOS Qubit: Quantum & Probabilistic Computing - Mark Sanquer at INC 2019
IEEE Magnetics Distinguished Lecture - Can-Ming Hu
Mobile Transport for 5G RAN - Rajesh Chundury - IEEE Sarnoff Symposium, 2019
Transportation Electrification: New Stage, New Demand: Transportation in China
IEEE Themes - Efficient networking services underpin social networks
IEEE in the North and South Poles (INSP) - Tony Milne - Ignite: Sections Congress 2017
Heterogeneous Technology Configurable Fabrics for Field Programmable Co-design of CMOS and Spin-based Devices: IEEE Rebooting Computing 2017
Airship Renaissance
An Optical Co-Processor for Large-Scale Machine Learning - Laurent Daudet at INC 2019
Spin Dynamics in Inhomogeneously Magnetized Systems - Teruo Ono: IEEE Magnetics Society Distinguished Lecture 2016
Interaction of ferromagnetic and superconducting permanent magnets - superconducting levitation
ASC-2014 SQUIDs 50th Anniversary: 6 of 6 - Kent Irwin - SQUIDs as detectors for cosmology
Ethical Considerations: A Key to Technological Advancement - IEEE TechEthics Virtual Panel

IEEE-USA E-Books

  • Conductivity Mismatch and Voltage Dependence of Magnetoresistance in a Semiconductor Spin Injection and Detection Structure

    This work studies the voltage dependence of magnetoresistance in a semiconductor spin injection and detection structure. The voltage dependence of the spin dependent interface resistance at a ferromagnet semiconductor interface is investigated and spin diffusion models are used to evaluate the voltage dependence of magnetoresistance. We find that the voltage dependence of magnetoresistance is similar to that in magnetic tunnel junctions. Using our model for spin injection in a ferromagnet-oxide-semiconductor junction, the variation of magnetoresistance ratio with semiconductor doping and oxide thickness has been studied.

  • Effect of intervening ferromagnet on spin accumulation in Py/Au/Py spin valve device

    Nonlocal spin signal is largely dependent on the resistivity of nonmagnetic channel in spin valve devices. Since the resistivity of channel is subjected to change from sample to sample, it is necessary to keep the resistivity as constant as possible. Multiferromagnetic electrodes on single channel are favorable in order to minimize the variation of the resistivity. There is controversial that intervening ferromagnetic electrode may affect spin signal in such a structure. In this experiment, we fabricated Py/Au/Py spin valve devices with multi Py electrodes and measured series of nonlocal signal in various distances of Pys with or without intervening Py electrode aiming at clarifying the controversy.

  • Mesoscopic and microscopic spin injection, spin precession, spin diffusion and spin transport in semiconductor nanostructures

    Summary form only given. Presents the author's latest comprehensive theoretical investigations on spin kinetics of semiconductor quantum wells, quantum wires and quantum dots based on microscopic many-body and single particle approaches as well as mesoscopic approach under various conditions, such as temperature, external static electric and magnetic fields, THz radiations, confinement of the structure, strain etc. Both transient and steady-state transports are addressed. In addition to the cases near the equilibrium, spin kinetics far away from the equilibrium such as electrons of high spin polarization and/or electrons under strong electric field (hot electrons) is also discussed in detail. Good agreements with the available experiments are presented and many novel effects are predicted.

  • A Schottky tunnel barrier contact for electrical spin injection from a magnetic metal into a semiconductor

    In this paper, we report here that spin injection from an Fe Schottky contact produces a spin polarization of 32% in an AlGaAs/GaAs quantum well, demonstrate via the Rowell criteria that tunneling is the dominate transport process, and examine the atomic structure of the spin injecting interface with TEM.

  • Fabrication of High Temperature Superconductor-Colossal Magnetoresistor Spin Injection Devices

    None

  • Influence of Au capping layer on spin accumulation in lateral spin-valve structure

    The influence of the thin Au capping on the Cu wire for the spin current in a lateral spin-valve structure was studied in this paper. The lateral spin-valve structure used consists of two Ni-Fe wires bridged by a nonmagnetic metal wire. Two kinds of nonmagnetic metal wires were used: a single Cu wire and Cu wire covered with Au layer. From the residual resistivity ratio of the wires, it was observed that the double-layered wire was more electrically conductive due to the Au capping layer than the single-layered wire because the capping layer prevents oxidation of the Cu surface. Large spin accumulation was obtained from Cu/Au spin valve than from single-layered Cu one.

  • Time-resolved studies of pulsed electrical spin injection into single InGaAs quantum dots

    This study investigates on the circular polarization degree (CPD) anomaly emitted by InGaAs quantum dots within a spin-light emitting diode (spin-LED) with a ZnMnSe spin aligner, when the spin-LED device is excited with nanosecond width pulses. Results show that the change of CPD must be related to spin scattering events. One factor that is responsible to these scattering events is a potential barrier that forms within the spin-LED, which the spin- polarized carriers have to pass by a tunneling process. Hence, tunnelling will only be possible if an empty target state becomes available, such as, after injecting a hole into an occupied dot and subsequent optical recombination.

  • Room temperature spin injection in a semiconductor in a conventional MIS heterostructure: bias voltage dependence

    In this paper, we discuss about the creation of spin polarized carriers inside a semiconductor at room temperature.

  • Magnetization switching due to non-local spin injection into small ferromagnetic particle

    In this paper, magnetic switching due to non-local spin injection into small ferromagnetic particle in a laterally ferromagnetic/nonmagnetic hybrid structure is investigated. Lateral multi-terminal spin-injection device is fabricated by means of the conventional lift-off technique. The device consists of two large Permalloy (Py) pads, a Cu cross and a Py small particle. Au wires are connected to the Py particle in order to reduce the total spin resistance of the Py particle. The non-local spin-valve signal is measured and is found to be 0.3 m/spl Omega/. This proves that the spin current from the Py pad is injected into the Py particle. Also, non-local spin injection into the Py particle is performed by applying the large pulsed current up to 15 mA. Results show that when the pulsed current is increased positively in the anti- parallel state, no signal is observed. On the other hand, increasing the pulsed current negatively reveals a change in the signal corresponding to the transition from the anti-parallel to parallel configurations at -13 mA. This implies that the magnetization in the Py particle is switched only by the spin current.

  • Spin-Polarized Transport Phenomena in Double Magnetic Tunnel Junctions Caused by Ferromagnetic CoFe Nanoparticles

    We present some unusual spin-polarized transport phenomena in asymmetric double barrier magnetic tunneling junctions (ADBMTJs) with CoFe/AlO<sub>x</sub>/ferromagnetic nanoparticle (FM-NPs)/AlO<sub>x</sub>/Ta structures. The conductance curves and the magnetoresistance ratio clearly oscillate with applied bias voltage, indicating the presence of Coulomb blockade effects due to isolated ferromagnetic nanoparticles in the parallel configuration in the ADBMTJ. The oscillation period is about 1.5 mV at 2 K.



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