Conferences related to Single electron memory

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2020 59th IEEE Conference on Decision and Control (CDC)

The CDC is the premier conference dedicated to the advancement of the theory and practice of systems and control. The CDC annually brings together an international community of researchers and practitioners in the field of automatic control to discuss new research results, perspectives on future developments, and innovative applications relevant to decision making, automatic control, and related areas.


2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2020 IEEE International Magnetic Conference (INTERMAG)

INTERMAG is the premier conference on all aspects of applied magnetism and provides a range of oral and poster presentations, invited talks and symposia, a tutorial session, and exhibits reviewing the latest developments in magnetism.


2020 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC)

All areas of ionizing radiation detection - detectors, signal processing, analysis of results, PET development, PET results, medical imaging using ionizing radiation


ICASSP 2020 - 2020 IEEE International Conference on Acoustics, Speech and Signal Processing (ICASSP)

The ICASSP meeting is the world's largest and most comprehensive technical conference focused on signal processing and its applications. The conference will feature world-class speakers, tutorials, exhibits, and over 50 lecture and poster sessions.


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Periodicals related to Single electron memory

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Antennas and Propagation, IEEE Transactions on

Experimental and theoretical advances in antennas including design and development, and in the propagation of electromagnetic waves including scattering, diffraction and interaction with continuous media; and applications pertinent to antennas and propagation, such as remote sensing, applied optics, and millimeter and submillimeter wave techniques.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Automatic Control, IEEE Transactions on

The theory, design and application of Control Systems. It shall encompass components, and the integration of these components, as are necessary for the construction of such systems. The word `systems' as used herein shall be interpreted to include physical, biological, organizational and other entities and combinations thereof, which can be represented through a mathematical symbolism. The Field of Interest: shall ...


Circuits and Systems for Video Technology, IEEE Transactions on

Video A/D and D/A, display technology, image analysis and processing, video signal characterization and representation, video compression techniques and signal processing, multidimensional filters and transforms, analog video signal processing, neural networks for video applications, nonlinear video signal processing, video storage and retrieval, computer vision, packet video, high-speed real-time circuits, VLSI architecture and implementation for video technology, multiprocessor systems--hardware and software-- ...


Circuits and Systems I: Regular Papers, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


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Most published Xplore authors for Single electron memory

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Xplore Articles related to Single electron memory

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Fabrication of single electron memory on atomically flat /spl alpha/-Al/sub 2/O/sub 3/ substrate made by AFM nano-oxidation process

International Electron Devices Meeting. IEDM Technical Digest, 1997

The single electron transistor and the single electron memory with the planar structure were fabricated for the first time using the narrow oxidized Nb wires as tunneling junctions on the atomically flat niobium (Nb) metal surface that was on the atomically flat /spl alpha/-Al/sub 2/O/sub 3/ (1012) surface. The narrow oxidized Nb wires were formed using the AFM cantilever as ...


Programmable single-electron transistor logic for low-power intelligent Si LSI

2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315), 2002

Room-temperature-operating single-electron devices work not only as single- electron transistors (SETs) but also as nonvolatile single-electron memories. It is demonstrated that the combination of Coulomb oscillations with the nonvolatile memory functions offers high programmability for LSIs. The power and delay of a programmable SET logic are estimated.


Multiple-valued memory operation in SiN-based single-electron memory

58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526), 2000

Multiple-valued memory operation is one of the keys for future high-density memory devices since it significantly increases memory capacity per unit area. We previously reported a single electron memory device that utilizes traps in a silicon nitride (SiN) layer as the memory node and an ultra-sensitive Al/AlO/sub x/ single-electron transistor (SET) for readout (Sunarmura et al., 1999). In this work, ...


Single-electron memory for giga-to-tera bit storage

Proceedings of the IEEE, 1999

Starting with a brief review on the single-electron memory and its significance among various single-electron devices, this paper addresses the key issues which one inevitably encounters when one tries to achieve giga-to- tera bit memory integration. Among the issues discussed are: room-temperature operation; memory-cell architecture; sensing scheme; cell-design guideline; use of nanocrystalline silicon versus lithography; array architecture; device- to-device variations; ...


Room temperature Coulomb oscillation and memory effect for single electron memory made by pulse-mode AFM nano-oxidation process

International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217), 1998

A single electron transistor (SET) and a single electron memory were fabricated using the improved pulse-mode AFM nano-oxidation process. A single electron transistor which works as an electrometer for detecting the potential of the memory node of the single electron memory showed clear Coulomb oscillation characteristics with the periods of 2.1 V at room temperature. A single electron memory showed ...


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Educational Resources on Single electron memory

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IEEE.tv Videos

Electronic Systems for Quantum Computation - David DiVincenzo: 2016 International Conference on Rebooting Computing
The Josephson Effect: Brian Josephson Debates John Bardeen
The Josephson Effect: Josephson Digital Electronics in the Soviet Union
AlGaN/GaN Plasmonic Terahertz Detectors
Superconductive Energy-Efficient Computing - ASC-2014 Plenary-series - 6 of 13 - Wednesday 2014/8/13
Digital Neuromorphic Design of a Liquid State Machine for Real-Time Processing - Nicholas Soures: 2016 International Conference on Rebooting Computing
Accelerating Photovoltaics
An IEEE IPC Special Session with X. Chen from Nokia Bell Labs
From Edge To Core: Memory-Driven Hardware and Software Co-Design - IEEE Rebooting Computing Industry Summit 2017
Energy Efficient Single Flux Quantum Based Neuromorphic Computing - IEEE Rebooting Computing 2017
Magnetics + Mechanics + Nanoscale = Electromagnetics Future - Greg P. Carman: IEEE Magnetics Distinguished Lecture 2016
Magnetic Materials and Magnetic Devices - Josep Fontcuberta: IEEE Magnetics Distinguished Lecture 2016
Single Frame Super Resolution: Fuzzy Rule-Based and Gaussian Mixture Regression Approaches
Ted Berger: Far Futures Panel - Technologies for Increasing Human Memory - TTM 2018
A Comparison Between Single Purpose and Flexible Neuromorphic Processor Designs: IEEE Rebooting Computing 2017
Improved Deep Neural Network Hardware Accelerators Based on Non-Volatile-Memory: the Local Gains Technique: IEEE Rebooting Computing 2017
IMS 2011 Microapps - Memory Effects in RF Circuits: Definition, Manifestations and Fast, Accurate Simulation
Impact of Linearity and Write Noise of Analog Resistive Memory: IEEE Rebooting Computing 2017
Towards Logic-in-Memory circuits using 3D-integrated Nanomagnetic Logic - Fabrizio Riente: 2016 International Conference on Rebooting Computing
Non-Volatile Memory Array Based Quantization - Wen Ma - ICRC San Mateo, 2019

IEEE-USA E-Books

  • Fabrication of single electron memory on atomically flat /spl alpha/-Al/sub 2/O/sub 3/ substrate made by AFM nano-oxidation process

    The single electron transistor and the single electron memory with the planar structure were fabricated for the first time using the narrow oxidized Nb wires as tunneling junctions on the atomically flat niobium (Nb) metal surface that was on the atomically flat /spl alpha/-Al/sub 2/O/sub 3/ (1012) surface. The narrow oxidized Nb wires were formed using the AFM cantilever as an ultra- fine cathode. Owing to the atomically flat surface of the Nb metal, the uniformity and reproducibility of the oxidized line width and space, such as 10-15 nm were greatly enhanced and therefore the complicated tunnel junction structure for the memory could be fabricated.

  • Programmable single-electron transistor logic for low-power intelligent Si LSI

    Room-temperature-operating single-electron devices work not only as single- electron transistors (SETs) but also as nonvolatile single-electron memories. It is demonstrated that the combination of Coulomb oscillations with the nonvolatile memory functions offers high programmability for LSIs. The power and delay of a programmable SET logic are estimated.

  • Multiple-valued memory operation in SiN-based single-electron memory

    Multiple-valued memory operation is one of the keys for future high-density memory devices since it significantly increases memory capacity per unit area. We previously reported a single electron memory device that utilizes traps in a silicon nitride (SiN) layer as the memory node and an ultra-sensitive Al/AlO/sub x/ single-electron transistor (SET) for readout (Sunarmura et al., 1999). In this work, we propose a new device structure in which a new layered structure is designed so that only electrons can participate in the device characteristics. With this new device structure, we successfully achieve multiple-valued single-electron memory operation of up to nine values for the first time. An oscillating behavior in SET output current (I/sub SET/) during write/read processes due to electron trapping/detrapping at the traps is used to represent multiple values.

  • Single-electron memory for giga-to-tera bit storage

    Starting with a brief review on the single-electron memory and its significance among various single-electron devices, this paper addresses the key issues which one inevitably encounters when one tries to achieve giga-to- tera bit memory integration. Among the issues discussed are: room-temperature operation; memory-cell architecture; sensing scheme; cell-design guideline; use of nanocrystalline silicon versus lithography; array architecture; device- to-device variations; read/write error rate; and CMOS/single-electron-memory hybrid integration and its positioning among various memory architectures.

  • Room temperature Coulomb oscillation and memory effect for single electron memory made by pulse-mode AFM nano-oxidation process

    A single electron transistor (SET) and a single electron memory were fabricated using the improved pulse-mode AFM nano-oxidation process. A single electron transistor which works as an electrometer for detecting the potential of the memory node of the single electron memory showed clear Coulomb oscillation characteristics with the periods of 2.1 V at room temperature. A single electron memory showed the hysteresis loop by the return trip of the memory bias when starting from 0 V to 10 V and again coming back to 0 V.

  • Fabrication technology of Si nanodot nanowire memory transistors using an inorganic EB resist process

    Recently, ultra-small Si devices utilizing a quantum-size and/or Coulomb blockade effect have been received much attention to open a new Si device stream. This paper describes a fabrication technology of Si nanodot nanowire memory transistors with side gates. For the first time, an inorganic EB resist process was applied to fabricate Si nanowires. The Si nanodevice has a Si nanowire, Si nanodots, and a poly-Si nanogate and works as a single electron memory transistor.

  • A room-temperature single-electron memory device using fine-grain polycrystalline silicon

    The first room-temperature operation is demonstrated of a single-electron memory device, in which an electron represents one-bit information. This is made possible due to our new one-transistor memory configuration (conventionally three circuit elements are needed), which has very high charge sensitivity. Another new technique, which stabilizes the one-electron stored state, is ultra-thin (4 nm) poly-Si film for the active region, in which an array of 10-nm grains are naturally formed. In the fabricated poly-Si TFTs a single electron is systematically stored (or "written") with every 15-V gate- voltage increase, and the number of stored electrons is counted (or "read") by the quantized threshold-voltage shift. The single-electron memory provides a new non-volatile RAM, which is very suitable for mobile computers/communicators.<<ETX>>

  • Silicon single-electron transistors on a SIMOX substrate

    Until recently, single-electron transistors have only been operable at very low temperatures, mostly below 1 K. By contrast, Si single-electron transistors fabricated on a SIMOX substrate by using a pattern-dependent oxidation technique show conductance oscillations even at room temperature. In addition, a single-electron memory effect is observed in specially designed Si single-electron transistors.

  • Static and dynamic characterization of MOS capacitors containing nano-crystal silicon dots

    We present some experimental results and a simple model for the study of capacitors containing silicon dots in silicon dioxide to be integrated in a new generation of non volatile single electron memories. This work is essential to stabilise the technology to be used in the future for these devices in very high density memory arrays.

  • Single-electron-memory integrated circuit for giga-to-tera bit storage

    A single-electron-based integrated circuit is presented. An 8/spl times/8 b memory-cell array demonstrates read/write, ushering in a new phase of research on single-electron devices.



Standards related to Single electron memory

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IEEE Recommended Practice for Data Communications Between Remote Terminal Units and Intelligent Electronic Devices in a Substation

This project will make the Trial Use document a full Recommended Practice. The present standard was published in March 1998 as a Trial Use Recommended Practice. However, the protocols listed in the document were actually selected by the Task Force in 1995. It has already shown to be a valuable standard and is being widely used in the industry.


IEEE Standard for Definitions, Symbols, and Characterization of Floating Gate Memory Arrays

Modify the present FGA standard to include floating gate flash" EEPROM's that use Fowler-Nordheim tunneling and/or hot electron injection programming techniques. Hot electron injection EPROM's are included for completeness."


IEEE Standard for Information Technology - POSIX Ada Language Interfaces - Part 1: Binding for System Application Program Interface (API)

This document is part of the POSIX series of standards for applications and user interfaces to open systems. It defines the Ada language bindings as package specifications and accompanying textual descriptions of the applications program interface (API). This standard supports application portability at the source code level through the binding between ISO 8652:1995 (Ada) and ISO/IEC 9945-1:1990 (IEEE Std 1003.1-1990 ...


IEEE Standard for Message Sets for Vehicle/Roadside Communications

Research, compile, and consolidate information leading to the publication of a standard for exchanging DSRC information, providing for bi-directional message transmission and device control, in a manner which is compatible with but independent of the ASTM efforts to specify DSRC Layers 1 and 2. This will entail specifying the transponder resources, the transponder resource manager, the application message sets, and ...


IEEE Standard for Motor Vehicle Event Data Recorders (MVEDRs) Amendment 1: MVEDR Connector Lockout Apparatus (MVEDRCLA)

Motor Vehicle Event Data Recorders (MVEDRs) collect, record, store and export data related to pre-defined events in usage history. This amendment defines a lockout protocol for MVEDR output data accessibility by securing the vehicle output diagnostic link connector (DLC). This standard does not prescribe data security within the vehicle electronic control units (ECUs) or within the intra-vehicle communication and/or diagnostic ...


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Jobs related to Single electron memory

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