Conferences related to Silicon radiation detectors

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2020 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC)

All areas of ionizing radiation detection - detectors, signal processing, analysis of results, PET development, PET results, medical imaging using ionizing radiation


2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)

The world's premiere conference in MEMS sensors, actuators and integrated micro and nano systems welcomes you to attend this four-day event showcasing major technological, scientific and commercial breakthroughs in mechanical, optical, chemical and biological devices and systems using micro and nanotechnology.The major areas of activity in the development of Transducers solicited and expected at this conference include but are not limited to: Bio, Medical, Chemical, and Micro Total Analysis Systems Fabrication and Packaging Mechanical and Physical Sensors Materials and Characterization Design, Simulation and Theory Actuators Optical MEMS RF MEMS Nanotechnology Energy and Power


2019 IEEE SENSORS

The IEEE Sensors Conference is a forum for presentation, discussion, and exchange of state-of-the art information including the latest research and development in sensors and their related fields. It brings together researchers, developers, and practitioners from diverse fields including international scientists and engineers from academia, research institutes, and companies to present and discuss the latest results in the general field of sensors.

  • 2018 IEEE SENSORS

    The IEEE Sensors Conference is a forum for presentation, discussion, and exchange of state -of-the art information including the latest research and development in sensors and their relatedfields. It brings together researchers, developers, and practitioners from diverse fields includinginternational scientists and engineers from academia, research institutes, and companies topresent and discuss the latest results in the general field of sensors.

  • 2017 IEEE SENSORS

    The IEEE Sensors Conference is a forum for presentation, discussion, and exchange of state -of-the art information including the latest research and development in sensors and their relatedfields. It brings together researchers, developers, and practitioners from diverse fields includinginternational scientists and engineers from academia, research institutes, and companies topresent and discuss the latest results in the general field of sensors.

  • 2016 IEEE Sensors

    The IEEE Sensors Conference is a forum for presentation, discussion, and exchange of state -of-the art information including the latest research and development in sensors and their related fields. It brings together researchers, developers, and practitioners from diverse fields including international scientists and engineers from academia, research institutes, and companies to present and discuss the latest results in the general field of sensors.

  • 2015 IEEE Sensors

    The IEEE Sensors Conference is a forum for presentation, discussion, and exchange of state -of-the art information including the latest research and development in sensors and their related fields. It brings together researchers, developers, and practitioners from diverse fieldsincluding international scientists and engineers from academia, research institutes, and companies topresent and discuss the latest results in the general field of sensors.

  • 2014 IEEE Sensors

    The IEEE Sensors Conference is a forum for presentation, discussion, andexchange of state -of-the art information including the latest research and development in sensors andtheir related fields. It brings together researchers, developers, and practitioners from diverse fieldsincluding international scientists and engineers from academia, research institutes, and companies topresent and discuss the latest results in the general field of sensors.

  • 2013 IEEE Sensors

    The IEEE SENSORS Conference is a forum for presentation, discussion, and exchange of state -of-the art information including the latest research and development in sensors and their related fields. It brings together researchers, developers, and practitioners from diverse fields including international scientists and engineers from academia, research institutes, and companies to present and discuss the latest results in the general field of sensors.

  • 2012 IEEE Sensors

    The IEEE Sensors Conference is a forum for presentation, discussion, and exchange of state-of-the art information including the latest research and development in sensors and their related fields. It brings together researchers, developers, and practitioners from diverse fields including international scientists and engineers from academia, research institutes, and companies to present and discuss the latest results in the general field of sensors.

  • 2011 IEEE Sensors

    The IEEE Sensors Conference is a forum for presentation, discussion, and exchange of state-of-the art information including the latest research and development in sensors and their related fields. It brings together researchers, developers, and practitioners from diverse fields including international scientists and engineers from academia, research institutes, and companies to present and discuss the latest results in the general field of sensors. IEEE SENSORS 2011 will include keynote addresses by eminen

  • 2010 IEEE Sensors

    The IEEE SENSORS 2010 Conference is a forum for state-of-the-art presentations on sensors and related topics covering from theory to application, device to system, modeling to implementation and from macro/nano to scale.

  • 2009 IEEE Sensors

    IEEE Sensors Conference 2009 is intended to provide a common forum for researchers, scientists, engineers and practitioners throughout the world to present their latest research findings, ideas, developments and applications in the area of sensors and sensing technology. IEEE Sensors Conference 2009 will include keynote addresses by eminent scientists as well as special, regular and poster sessions.

  • 2008 IEEE Sensors

    IEEE SENSORS 2008 solicits original and state-of-the-art contributions to sensors and related topics, covering from theory to application, from device to system, from modeling to implementation, and from macro to micro/nano in scale. Topics of interest include,but are not limitid to: Phenomena, Modeling, and Evaluation (Novel Sensing Principles, Theory and Modeling, Sensors Characterization, Evaluation and Testing, Data Handling and Mining) Chemical and Gas Sensors (Materials, Devices, Electronics N

  • 2007 IEEE Sensors

    IEEE SENSORS 2007 solicits original and state-of-the-art contributions to sensors and related topics, covering from theory to application, from device to system, from modeling to implementation, and from macro to micro/nano in scale.

  • 2006 IEEE Sensors

  • 2005 IEEE Sensors

  • 2004 IEEE Sensors

  • 2003 IEEE Sensors

  • 2002 IEEE Sensors


2018 IEEE-NPSS Real Time Conference (RT)

Real time computing applications involving both hardware and software development in nuclear, particle, plasma and other related fields.


2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

Low power CMOS and embedded memory Foundry technology RF process, device and integration technology Standalone memory: DRAM, FLASH, emerging memory technology Advanced process modules: e.g. gate stack, junction, strain/channel engineering, low-R contact, low-C spacer/ILD, interconnect technology, ALE and selective deposition, etc.Nanopatterning: Multiple patterning, Directed Self-Assembly, EUV, etc. Power and analog IC device and technology Advanced CMOS process and devices: Ge, SiGe, III-V, FinFET, GAA, 2D materials/1D nanowires Material, Process and device modelingTFT and organic electronics MEMS, imagers and sensors Advanced manufacturing technology, metrology and yieldReliability physics, characterization and testAdvanced packaging and 2.5D/3D IntegrationPhotonics and Beyond CMOS TechnologyEnergy harvesting technology Wearable and loE enabling technologiesNeuromo

  • 2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

    •Low power CMOS and embedded memory •Foundry technology •RF process, device and integration technology •Standalone memory: DRAM, FLASH, emerging memory technology •Advanced process modules: e.g. gate stack, junction, strain/channel engineering, low-R contact, low-C spacer/ILD, interconnect technology, ALE and selective deposition, etc.•Nanopatterning: Multiple patterning, Directed Self-Assembly, EUV, etc. •Power and analog IC device and technology •Advanced CMOS process and devices: Ge, SiGe, III-V, FinFET, GAA, 2D materials/1D nanowires •Material, Process and device modeling •TFT and organic electronics •MEMS, imagers and sensors •Advanced manufacturing technology, metrology and yield •Reliability physics, characterization and test •Advanced packaging and 2.5D/3D Integration•Photonics and Beyond CMOS Technology •Energy harvesting technology •Wearable and loE enabling technologies

  • 2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

    •Low power CMOS and embedded memory •Foundry technology •RF process, device and integration technology •Standalone memory: DRAM, FLASH, emerging memory technology •Advanced CMOS modules: e.g. gate stack, contact, doping, strained channel, non-Si integration, interconnect technology, etc. •Lithography: directed self-assembly, EUV, multiple patterning, etc. •Power and analog IC device and technology •Advanced CMOS process and devices: Ge, SiGe, III-V, GAA, 2D/1D •Process and device modeling •TFT and organic electronics •MEMS, imagers and sensors •Advanced manufacturing technology, yield, reliability and test •3D ICs and advanced packaging •Photonics •Energy harvesting technology •loT enabling technologies

  • 2015 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

    Low power CMOS and embedded memoryFoundry technologyRF process, device and integration technologyStand alone memory: DRAM, FLASH, emerging memoriesAdvanced CMOS modules: e.g; gate stack, strained Si, SiGe substrates, interconnect technology, etc.Lithography: directed self assembly, EUV, multiple patterning, etc.Power and analog IC device and technologyAdvanced CMOS: Ge, SiGe, III-V process and devicesProcess and device modelingTFT and organic electronicsMEMS , imagers and sensorsAdvanced manufacturing technology, yield, reliability and test3D ICs and advanced packagingPhotonicsEnergy scavenging technology

  • 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

    Conventional and novel device concepts in CMOS, SiGe bipolar, and BiCMOS IC technologies, DRAM, SRAM and emerging NVM technologies such as RRAM and MRAM, Embedded memory, Advanced lithography technology and next generation lithography, FinFET, SOI and fully depleted devices, Nanoelectronic materials/process/devices, Process and device modeling, Thin film and flexible electronics, Organic electronics and photonics, Analog/RF devices and technologies, Advanced process technology, Steep subthreshold devices and other energy efficiency related devices, More-than-Moore device integration and applications, Advanced interconnect technology, Process control and advanced manufacturing technologies, Advanced packaging technology, Advanced gate stack science and technology, 3D integration technology, Yield enhancement, High mobility channel devices, MEMS and sensors, Device and interconnect reliability

  • 2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

    Conventional and Novel device concepts in CMOS, SiGe bipolar, and BiCMOS IC technologies, Steep Subthreshold devices and other energy efficiency related devices, Advanced gate stack science and technology, More-than-Moore Device integration and applications, DRAM, SRAM and Emerging NVM, technologies such as RRAM and MRAM, Advanced Interconnect technology, Embedded Memory, Advanced packaging technology, FinFET, SOI and fully depleted devices, Nanoelectronic materials /process/devices, Device and interconnect reliability, 3D Integration technology, Process and device modeling, Yield enhancement, Thin Film and Flexible Electronics, Process control and advanced manufacturing technologies, Organic electronics and photonics, MEMS and Sensors, Analog/RF devices and technologies, Advanced lithography technology and next generation lithography, Advanced process technology.

  • 2012 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

    CMOS, SiGe bipolar, and BiCMOS ICs, DRAM, SRAM and non-volatile memory, Merged logic and memory, SOI material and devices, Device and interconnect reliability, Process and device modeling, Advanced lithography technology, TFT technology, Advanced packaging technology, RF devices and technologies, Advanced process technology, Interconnect and 3D Integration technology, High-k and low-k materials, Nanoelectronic devices/technology, Organic electronics and photonics, Steep Subthreshold devices and other energy related concept, Novel device concept, Yield enhancement, Process control, MEMS and other microsystems.

  • 2011 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

    VLSI Technology, Systems and Application

  • 2010 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA)

    new innovations and achievements related to VLSI technology, systems and applications

  • 2009 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA)

    new innovations and achievements related to VLSI technology, systems and applications

  • 2008 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA)

    The conference is proud to create an annual platform for technical exchanges by experts from all over the world on the advancements in semiconductor research, development, manufacturing, design, and test.

  • 2007 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA)

  • 2006 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA-Tech)

  • 2005 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA-Tech)


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Periodicals related to Silicon radiation detectors

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Aerospace and Electronic Systems Magazine, IEEE

The IEEE Aerospace and Electronic Systems Magazine publishes articles concerned with the various aspects of systems for space, air, ocean, or ground environments.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Biomedical Engineering, IEEE Transactions on

Broad coverage of concepts and methods of the physical and engineering sciences applied in biology and medicine, ranging from formalized mathematical theory through experimental science and technological development to practical clinical applications.


Circuits and Systems I: Regular Papers, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Circuits and Systems Magazine, IEEE


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Most published Xplore authors for Silicon radiation detectors

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Xplore Articles related to Silicon radiation detectors

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Silicon Photomultipliers - End of the Photomultiplier Tubes Era

LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings, 2007

The principle of silicon photomultipliers (SiPM) is discussed. The SiPM structure is based on the array of submicron semiconductor micro-cells, working in breakdown mode with integrated quenching elements and common electrode. The characteristics and the operational conditions of the SiPM is presented.


Comparison of radiation damage in silicon induced by proton and neutron irradiation

IEEE Transactions on Nuclear Science, 1999

The subject of radiation damage to Si detectors induced by 24-GeV/c protons and nuclear reactor neutrons has been studied. Detectors fabricated on single- crystal silicon enriched with various impurities have been tested. Significant differences in electrically active defects have been found between the various types of material. The results of the study suggest for the first time that the widely ...


Silicon p-n junctions as detectors for uv radiation

1964 International Electron Devices Meeting, 1964

Photoconductive and photovoltaic devices for detection of short wavelength visible and ultraviolet radiation have not previously been developed to the same extent as solid state infrared detectors. The spectral response of semiconductor devices generally exhibits a sharp drop in sensitivity with decreasing wavelength e. g. in standard Si devices, the Dλ at 4000 Å is lower than the Dλ at ...


Measurements of fluxes of thermal neutrons using detector /sup 6/LiI(Eu)-Si-Pin-Pd and a charge-sensitive preamplifier

1997 IEEE Nuclear Science Symposium Conference Record, 1997

A method is described for measurement of the flux of thermal neutrons using detectors based on a /sup 6/LiI:Eu single crystal, a Hamamatsu Si-PIN-PD of S-3590-01 type and a fast charge-sensitive preamplifier.


Semiconductor Detectors for Neutron Field Investigation

IEEE Transactions on Nuclear Science, 1977

Small semiconductor gauges 2-4 mm in diameter wish radiators made of fissile materials 6Li, 10B, 235U, were produced for investigation of neutron fields in critical assemblies. Small dimensions of the devices ensure the distortion in neutron fields in critical assemblies and experimental channels of reactors to be practically avoided. Radiation resistance of semiconductor detectors of various types to fission fragments ...


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Educational Resources on Silicon radiation detectors

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IEEE-USA E-Books

  • Silicon Photomultipliers - End of the Photomultiplier Tubes Era

    The principle of silicon photomultipliers (SiPM) is discussed. The SiPM structure is based on the array of submicron semiconductor micro-cells, working in breakdown mode with integrated quenching elements and common electrode. The characteristics and the operational conditions of the SiPM is presented.

  • Comparison of radiation damage in silicon induced by proton and neutron irradiation

    The subject of radiation damage to Si detectors induced by 24-GeV/c protons and nuclear reactor neutrons has been studied. Detectors fabricated on single- crystal silicon enriched with various impurities have been tested. Significant differences in electrically active defects have been found between the various types of material. The results of the study suggest for the first time that the widely used nonionizing energy loss (NIEL) factors are insufficient for normalization of the electrically active damage in case of oxygen- and carbon- enriched silicon detectors. It has been found that a deliberate introduction of impurities into the semiconductor can affect the radiation hardness of silicon detectors.

  • Silicon p-n junctions as detectors for uv radiation

    Photoconductive and photovoltaic devices for detection of short wavelength visible and ultraviolet radiation have not previously been developed to the same extent as solid state infrared detectors. The spectral response of semiconductor devices generally exhibits a sharp drop in sensitivity with decreasing wavelength e. g. in standard Si devices, the Dλ at 4000 Å is lower than the Dλ at 8000 Å by orders of magnitude and is dropping rapidly as one proceeds into the ultraviolet.

  • Measurements of fluxes of thermal neutrons using detector /sup 6/LiI(Eu)-Si-Pin-Pd and a charge-sensitive preamplifier

    A method is described for measurement of the flux of thermal neutrons using detectors based on a /sup 6/LiI:Eu single crystal, a Hamamatsu Si-PIN-PD of S-3590-01 type and a fast charge-sensitive preamplifier.

  • Semiconductor Detectors for Neutron Field Investigation

    Small semiconductor gauges 2-4 mm in diameter wish radiators made of fissile materials 6Li, 10B, 235U, were produced for investigation of neutron fields in critical assemblies. Small dimensions of the devices ensure the distortion in neutron fields in critical assemblies and experimental channels of reactors to be practically avoided. Radiation resistance of semiconductor detectors of various types to fission fragments was determined.

  • (Al,Ga,In)N-based UV and VIS photodetectors

    Developments and some key problems in (Al,Ga,In)N-based UV and VIS photodetectors are briefly reviewed. Photodetectors' response to high energy photons are described. Some applications of these photodetectors in biophotonics and combustion control are presented. It is concluded that the detectors' performance are strongly linked to materials and processing progresses in such semiconductor alloys

  • Optimal Use of Junction Isolation for Photodetection in Monolithic Integrated Optoelectronic Circuits

    The concept of optimal use of junction isolation for photodetection in integrated circuits containing a detector element and associated amplifier and logic circuits is described.

  • Detection of Charged Particles in Amorphous Silicon Layers

    The successful development of radiation detectors made from amorphous silicon could offer the possibility for relatively easy construction of large area position-sensitive detectors. We have conducted a series of measurements with prototype detectors, on signals derived from alpha particles. The measurement results are compared with simple model calculations, and projections are made of potential applications in high-energy and nuclear physics.

  • Radiation damage of double-sided silicon strip detectors

    Effects of radiation damage on a double-sided readout silicon strip detector exposed to 65-MeV protons have been studied. Two types of detectors have been fabricated. The first type has a punch-through bias resistor on a p-n junction side and a narrow accumulation layer resistor on an ohmic-contact side. The second detector has pure resistive bias resistors on both sides. A floating p/sup +/ blocking line between adjacent n/sup +/ strips was used to obtain a good isolation on the ohmic-contact side. The readout coupling capacitors are integrated on both surfaces. It was observed that the strip isolation on both sides was maintained satisfactorily up to 61 kGy. For the first type a significant potential drop between bias ring and each strip was observed. The difference increased with increase of dose considerably on both surfaces. On the other hand, the pure resistive biasing method was very stable up to 40 kGY.<<ETX>>

  • Detector recovery/improvement via elevated-temperature-annealing (DRIVE): a new approach for Si detector applications in high radiation environment in SLHC

    A new approach to improve Si detector radiation hardness/tolerance, termed as DRIVE (detector recovery/improvement via elevated-temperature-annealing), has been realized by annealing of oxygen-rich (magnetic CZ, MCZ), proton- irradiated Si detectors (with negative space charge before annealing) at medium temperature for a few hours. The DRIVE approach has been proved to lead to the dramatic decrease in detector leakage current, decrease in detector negative space charge concentration, and an eventual space charge sign inversion from negative to positive. Defect studies have shown significant reduction in overall defect concentrations after annealing



Standards related to Silicon radiation detectors

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Jobs related to Silicon radiation detectors

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