Silicon

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Silicon is the most common metalloid. (Wikipedia.org)






Conferences related to Silicon

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2020 57th ACM/ESDA/IEEE Design Automation Conference (DAC)

The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2022 59th ACM/ESDA/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2021 58th ACM/ESDA/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2018 55th ACM/ESDA/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2017 54th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2015 52nd ACM/EDAC/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2014 51st ACM/EDAC/IEEE Design Automation Conference (DAC)

    DAC Description for TMRF The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading

  • 2013 50th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 session on design methodologies and EDA tool developments, keynotes, panels, plus User Track presentations. A diverse worldwide community representing more than 1,000 organization attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2012 49th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The Design Automation Conference (DAC) is the premier event for the design of electronic circuits and systems, and for EDA and silicon solutions. DAC features a wide array of technical presentations plus over 200 of the leading electronics design suppliers

  • 2011 48th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The Design Automation Conference is the world s leading technical conference and tradeshow on electronic design and design automation. DAC is where the IC Design and EDA ecosystem learns, networks, and does business.

  • 2010 47th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The Design Automation Conference (DAC) is the premier event for the design of electronic circuits and systems, and for EDA and silicon solutions. DAC features a wide array of technical presentations plus over 200 of the leading electronics design suppliers.

  • 2009 46th ACM/EDAC/IEEE Design Automation Conference (DAC)

    DAC is the premier event for the electronic design community. DAC offers the industry s most prestigious technical conference in combination with the biggest exhibition, bringing together design, design automation and manufacturing market influencers.

  • 2008 45th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The Design Automation Conference (DAC) is the premier event for the design of electronic circuits and systems, and for EDA and silicon solutions. DAC features a wide array of technical presentations plus over 250 of the leading electronics design suppliers.

  • 2007 44th ACM/IEEE Design Automation Conference (DAC)

    The Design Automation Conference (DAC) is the premier Electronic Design Automation (EDA) and silicon solution event. DAC features over 50 technical sessions covering the latest in design methodologies and EDA tool developments and an Exhibition and Demo Suite area with over 250 of the leading EDA, silicon and IP Providers.


2020 IEEE 16th International Workshop on Advanced Motion Control (AMC)

AMC2020 is the 16th in a series of biennial international workshops on Advanced Motion Control which aims to bring together researchers from both academia and industry and to promote omnipresent motion control technologies and applications.


2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe)

Energy conversion and conditioning technologies, power electronics, adjustable speed drives and their applications, power electronics for smarter grid, energy efficiency,technologies for sustainable energy systems, converters and power supplies


2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)

Photovoltaic materials, devices, systems and related science and technology


2019 IEEE Applied Power Electronics Conference and Exposition (APEC)

APEC focuses on the practical and applied aspects of the power electronics business. The conference addresses issues of immediate and long term importance to practicing power electronics engineer.


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Periodicals related to Silicon

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Aerospace and Electronic Systems Magazine, IEEE

The IEEE Aerospace and Electronic Systems Magazine publishes articles concerned with the various aspects of systems for space, air, ocean, or ground environments.


Antennas and Propagation, IEEE Transactions on

Experimental and theoretical advances in antennas including design and development, and in the propagation of electromagnetic waves including scattering, diffraction and interaction with continuous media; and applications pertinent to antennas and propagation, such as remote sensing, applied optics, and millimeter and submillimeter wave techniques.


Biomedical Circuits and Systems, IEEE Transactions on

The Transactions on Biomedical Circuits and Systems addresses areas at the crossroads of Circuits and Systems and Life Sciences. The main emphasis is on microelectronic issues in a wide range of applications found in life sciences, physical sciences and engineering. The primary goal of the journal is to bridge the unique scientific and technical activities of the Circuits and Systems ...


Circuits and Systems II: Express Briefs, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Communications, IEEE Transactions on

Telephone, telegraphy, facsimile, and point-to-point television, by electromagnetic propagation, including radio; wire; aerial, underground, coaxial, and submarine cables; waveguides, communication satellites, and lasers; in marine, aeronautical, space and fixed station services; repeaters, radio relaying, signal storage, and regeneration; telecommunication error detection and correction; multiplexing and carrier techniques; communication switching systems; data communications; and communication theory. In addition to the above, ...


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Most published Xplore authors for Silicon

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Xplore Articles related to Silicon

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Preparation of novel SiGe-free strained Si on insulator substrates

2002 IEEE International SOI Conference, 2002

A novel SiGe-free SSOI substrate technology has been described. This method enables the fabrication of well controlled, epitaxially-defined, thin strained Si layers directly on insulator layers. Tensile strain levels of greater than 1% have been demonstrated in these structures, and are not diminished after thermal anneal cycles. The strain-inducing relaxed SiGe layer is absent from the final structure, eliminating some ...


CMOS devices strained-silicon technology

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest., 2005

None


Enhancing CMOS Transistor Performance Using Lattice-Mismatched Materials in Source/Drain Regions

2006 International SiGe Technology and Device Meeting, 2006

Strain engineering using lattice-mismatched S/D in transistors and their combination with other stressors and optimum surface/channel orientations is very attractive and important for the continued improvement of CMOS performance in addition to device scaling


CMOS Devices - Strained Silicon

2006 International Electron Devices Meeting, 2006

None


Ion-beam hydrogenation of sputter-deposited amorphous silicon and amorphous silicon-germanium alloys

IEEE Conference on Photovoltaic Specialists, 1990

The posthydrogenation of undoped and boron-doped amorphous silicon and amorphous silicon-germanium alloys was studied using a Kaufman ion-beam source. These materials were deposited in a two-source radio frequency (RF) excited argon plasma sputter-deposition system. After ion-beam posthydrogenation, the optical bandgap of amorphous silicon-germanium alloys increased from about 1.12 eV to 1.47 eV, and the material has an air mass one ...


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Educational Resources on Silicon

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IEEE.tv Videos

Silicon Labs' Thunderboard Sense (SLTB001A): Mouser Engineering Bench Talk
IMS MicroApps: Silicon Technology Solutions for Wireless Front End Modules
KeyTalk with Ljubisa Stevanovic: From SiC MOSFET Devices to MW-scale Power Converters - APEC 2017
IEEE Patent Presentation
Silicon Photonics: An IPC Keynote with Michal Lipson
Nanophotonic Devices for Quantum Information Processing: Optical Computing - Carsten Schuck at INC 2019
Moving from Si to SiC from the End User’s Perspective - Muhammad Nawaz, APEC 2018
The Evolution and Future of RF Silicon Technologies for THz Applications
2011 IEEE Awards Ernst Weber Engineering Leadership Recognition - Tze-Chiang Chen
Steep Slope Devices: Advanced Nanodevices - Nicolo Oliva at INC 2019
Alice Wang - SSCS Chip Chat Podcast, Episode 6
From the Quantum Moore's Law toward Silicon Based Universal Quantum Computing - IEEE Rebooting Computing 2017
Design of Monolithic Silicon-Based Envelope-Tracking Power Amplifiers for Broadband Wireless Applications
A CMOS Qubit: Quantum & Probabilistic Computing - Mark Sanquer at INC 2019
RF-pFET in Fully Depleted SOI Demonstrates 420GHz FT: RFIC Industry Showcase 2017
Silicon THz: an Opportunity for Innovation
NIKSUN World Wide Security & Mobility Conference 2011 - V Solanki Lecture
An IEEE IPC Special Session with Alexander Spott of The Optoelectronics Research Group
Media & Women in Technology Panel - Lynnette Reese & Jennifer Elias - WIE ILC 2018
Takuo Sugano receives the IEEE Robert N. Noyce Medal - Honors Ceremony 2016

IEEE-USA E-Books

  • Preparation of novel SiGe-free strained Si on insulator substrates

    A novel SiGe-free SSOI substrate technology has been described. This method enables the fabrication of well controlled, epitaxially-defined, thin strained Si layers directly on insulator layers. Tensile strain levels of greater than 1% have been demonstrated in these structures, and are not diminished after thermal anneal cycles. The strain-inducing relaxed SiGe layer is absent from the final structure, eliminating some of the key problems inherent to other SSOI solutions.

  • CMOS devices strained-silicon technology

    None

  • Enhancing CMOS Transistor Performance Using Lattice-Mismatched Materials in Source/Drain Regions

    Strain engineering using lattice-mismatched S/D in transistors and their combination with other stressors and optimum surface/channel orientations is very attractive and important for the continued improvement of CMOS performance in addition to device scaling

  • CMOS Devices - Strained Silicon

    None

  • Ion-beam hydrogenation of sputter-deposited amorphous silicon and amorphous silicon-germanium alloys

    The posthydrogenation of undoped and boron-doped amorphous silicon and amorphous silicon-germanium alloys was studied using a Kaufman ion-beam source. These materials were deposited in a two-source radio frequency (RF) excited argon plasma sputter-deposition system. After ion-beam posthydrogenation, the optical bandgap of amorphous silicon-germanium alloys increased from about 1.12 eV to 1.47 eV, and the material has an air mass one photosensitivity of 1.5*10/sup 3/. The conductivity of the boron-doped amorphous silicon material improved by more than two orders of magnitude after ion-beam posthydrogenation. The material-removal rate during ion-beam hydrogenation is more sensitive to the ion-beam current density than to the ion-beam energy. The hydrogen content of ion-beam hydrogenated samples is about 30 at.% at the front surface and decreases exponentially toward the back surface tip to about 100 nm from the front surface.<<ETX>>

  • A Si/sub 0.7/Ge/sub 0.3/ strained layer etch stop for the generation of bond and etch back SOI

    Summary form only given. The authors discuss the use of an MBE grown Si/sub 0.7/Ge/sub 0.3/ strained layer as an etch stop, and the successful fabrication of bond and etch-back silicon on insulator with an undoped 200-nm silicon layer using this technology. Full integrity of the etch stop was maintained following oxidation and bonding of the prime wafer. Defects generated in the strained etch stop region during thermal treatments did not propagate into the active silicon device region.<<ETX>>

  • Effects of processing temperatures on device design rules for Silicon/Silicon Germanium heterojunction bipolar transistors

    None

  • SiCGe Ternarv Allovs - Extending Si-based Heterostructures

    We have synthesized Si1-yCyand Si1-x-yCyGexalloys using Molecular Beam Epitaxy. When combined with the Si-Ge system. the new ternary system offers greater versatility and freedom in strain and bandgap engineering. Unlike the Si-Ge system the Si-C system has a high misfit (52%) and low solubility (≪ 10-6), with a propensity to compound formation, therefore. the structures are kinetically stabilized by low temperature growth. In this paper. we first describe bandgap engineering applied to this system. We then consider the growth methodology and critical thickness. Strain compensation and strain engineering using the ternary system is then described. Finally we show that thermal degradation of these films does not occur till ≫ 800°C first by interdiffusion and subsequently at higher temperatures by silicon carbide precipitation.

  • High efficiency multi-junction solar cells using amorphous silicon and amorphous silicon-germanium alloys

    Using a novel cell design the authors have achieved a 13.7% conversion efficiency with amorphous silicon and amorphous silicon-germanium alloys in a three-cell stacked-junction configuration. 13.0% conversion efficiency was achieved in the tandem configuration. The efficiency value was measured using a triple-source solar simulator adjusted for global AM1.5 test conditions. This device has a structure of stainless steel/textured silver/zinc oxide/ni/sub 1/p/ni/sub 2/p/ni/sub 3/p/ITO/grid. The authors used an amorphous silicon-germanium alloy with the new design in the i/sub 1/ layer, and amorphous silicon alloys in the i/sub 2/ and i/sub 3/ layers. The J-V characteristic shows J/sub sc/=7.66 mA/cm/sup 2/, V/sub oc/=2.55 V, and fill factor= 0.70 with an active area of 0.25 xcm/sup 2/. The quantum efficiency of this device is 60% collection at 400 nm, 93% at the peak, 55% at 800 nm, and 21% at 850 nm. The total photocurrent density obtained by integrating the quantum efficiency envelope with the global AM1.5 spectrum is 23.5 mA/cm/sup 2/.<<ETX>>

  • Enhanced thermal dissipation in silica encapsulated Hybrid III-V/SOI nanolaser

    We report on the improvement of the thermal dissipation of hybrid III-V/SOI nanolasers by encapsulating the structures in Silica. Careful design was necessary to obtain theoretical quality factor above 106. CW operation was then obtained.



Standards related to Silicon

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No standards are currently tagged "Silicon"