Conferences related to Silicides

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2021 IEEE Photovoltaic Specialists Conference (PVSC)

Photovoltaic materials, devices, systems and related science and technology


2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2020 IEEE/MTT-S International Microwave Symposium (IMS)

The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2036 IEEE/MTT-S International Microwave Symposium - IMS 2036

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2031 IEEE/MTT-S International Microwave Symposium - IMS 2031

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2029 IEEE/MTT-S International Microwave Symposium - IMS 2029

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2026 IEEE/MTT-S International Microwave Symposium - IMS 2026

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2025 IEEE/MTT-S International Microwave Symposium - IMS 2025

    The IEEE International Microwave Symposium (IMS) is the world s foremost conferencecovering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies;encompassing everything from basic technologies to components to systems including thelatest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulationand more. The IMS includes technical and interactive sessions, exhibits, student competitions,panels, workshops, tutorials, and networking events.

  • 2024 IEEE/MTT-S International Microwave Symposium - IMS 2024

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2021 IEEE/MTT-S International Microwave Symposium - IMS 2021

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.

  • 2019 IEEE/MTT-S International Microwave Symposium - IMS 2019

    Comprehensive symposium on microwave theory and techniques including active and passive circuit components, theory and microwave systems.

  • 2018 IEEE/MTT-S International Microwave Symposium - IMS 2018

    Microwave theory and techniques, RF/microwave/millimeter-wave/terahertz circuit design and fabrication technology, radio/wireless communication.

  • 2017 IEEE/MTT-S International Microwave Symposium - IMS 2017

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.

  • 2016 IEEE/MTT-S International Microwave Symposium - IMS 2016

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2015 IEEE/MTT-S International Microwave Symposium - MTT 2015

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics. The IMS includes technical sessions, both oral and interactive, worksh

  • 2014 IEEE/MTT-S International Microwave Symposium - MTT 2014

    IMS2014 will cover developments in microwave technology from nano devices to system applications. Technical paper sessions, interactive forums, plenary and panel sessions, workshops, short courses, industrial exhibits, and a wide array of other technical activities will be offered.

  • 2013 IEEE/MTT-S International Microwave Symposium - MTT 2013

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter -wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2012 IEEE/MTT-S International Microwave Symposium - MTT 2012

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2011 IEEE/MTT-S International Microwave Symposium - MTT 2011

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2010 IEEE/MTT-S International Microwave Symposium - MTT 2010

    Reports of research and development at the state-of-the-art of the theory and techniques related to the technology and applications of devices, components, circuits, modules and systems in the RF, microwave, millimeter-wave, submillimeter-wave and Terahertz ranges of the electromagnetic spectrum.

  • 2009 IEEE/MTT-S International Microwave Symposium - MTT 2009

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2008 IEEE/MTT-S International Microwave Symposium - MTT 2008

  • 2007 IEEE/MTT-S International Microwave Symposium - MTT 2007

  • 2006 IEEE/MTT-S International Microwave Symposium - MTT 2006

  • 2005 IEEE/MTT-S International Microwave Symposium - MTT 2005

  • 2004 IEEE/MTT-S International Microwave Symposium - MTT 2004

  • 2003 IEEE/MTT-S International Microwave Symposium - MTT 2003

  • 2002 IEEE/MTT-S International Microwave Symposium - MTT 2002

  • 2001 IEEE/MTT-S International Microwave Symposium - MTT 2001

  • 2000 IEEE/MTT-S International Microwave Symposium - MTT 2000

  • 1999 IEEE/MTT-S International Microwave Symposium - MTT '99

  • 1998 IEEE/MTT-S International Microwave Symposium - MTT '98

  • 1997 IEEE/MTT-S International Microwave Symposium - MTT '97

  • 1996 IEEE/MTT-S International Microwave Symposium - MTT '96


2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)

The world's premiere conference in MEMS sensors, actuators and integrated micro and nano systems welcomes you to attend this four-day event showcasing major technological, scientific and commercial breakthroughs in mechanical, optical, chemical and biological devices and systems using micro and nanotechnology.The major areas of activity in the development of Transducers solicited and expected at this conference include but are not limited to: Bio, Medical, Chemical, and Micro Total Analysis Systems Fabrication and Packaging Mechanical and Physical Sensors Materials and Characterization Design, Simulation and Theory Actuators Optical MEMS RF MEMS Nanotechnology Energy and Power


2019 IEEE International Reliability Physics Symposium (IRPS)

Meeting of academia and research professionals to discuss reliability challenges.


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Periodicals related to Silicides

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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.


Computers, IEEE Transactions on

Design and analysis of algorithms, computer systems, and digital networks; methods for specifying, measuring, and modeling the performance of computers and computer systems; design of computer components, such as arithmetic units, data storage devices, and interface devices; design of reliable and testable digital devices and systems; computer networks and distributed computer systems; new computer organizations and architectures; applications of VLSI ...


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


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Xplore Articles related to Silicides

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A 35ns 128K fusible bipolar PROM

1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1986

A bipolar PROM using 2μm slot-isolation technology will be reported. Circuits include a column-current multiplexer and temperature-compensated sensing. The die size is 306×224 mil2.


A sub 100ns 256K DRAM

1983 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1983

A 90ns access time 256K×1 RAM with a 15ns 4b nibble mode will be described. Device uses shared sense amplifiers, booted word lines, active restore and vertical process scaling to achieve improved alpha immunity.


A 15ns 64K bipolar SRAM

1985 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1985

None


A 20ns color lookup table for raster scan displays

1985 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1985

A pipelined 20ns color lookup table with a microprocessor interface, implemented by a 1.75μ P well CMOS process will be discussed. Chip supports 8 planes of screen memory and produces 6b RGB DAC outputs.


A novel salicide process (SEDAM) for sub-quarter micron CMOS devices

Proceedings of 1994 IEEE International Electron Devices Meeting, 1994

A new salicide process, featuring selective silicon deposition and subsequent pre-amorphization (SEDAM), has been developed for sub-quarter micron CMOS devices. Non-doped silicon films were selectively deposited on gate and source/drain regions to avoid silicidation suppression due to heavily-doped As. Furthermore, silicidation was enhanced by pre-amorphization on the narrow gate and source/drain regions. TiSi/sub 2/ films, with a sheet resistance of ...


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Educational Resources on Silicides

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IEEE.tv Videos

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IEEE-USA E-Books

  • A 35ns 128K fusible bipolar PROM

    A bipolar PROM using 2μm slot-isolation technology will be reported. Circuits include a column-current multiplexer and temperature-compensated sensing. The die size is 306×224 mil2.

  • A sub 100ns 256K DRAM

    A 90ns access time 256K×1 RAM with a 15ns 4b nibble mode will be described. Device uses shared sense amplifiers, booted word lines, active restore and vertical process scaling to achieve improved alpha immunity.

  • A 15ns 64K bipolar SRAM

    None

  • A 20ns color lookup table for raster scan displays

    A pipelined 20ns color lookup table with a microprocessor interface, implemented by a 1.75μ P well CMOS process will be discussed. Chip supports 8 planes of screen memory and produces 6b RGB DAC outputs.

  • A novel salicide process (SEDAM) for sub-quarter micron CMOS devices

    A new salicide process, featuring selective silicon deposition and subsequent pre-amorphization (SEDAM), has been developed for sub-quarter micron CMOS devices. Non-doped silicon films were selectively deposited on gate and source/drain regions to avoid silicidation suppression due to heavily-doped As. Furthermore, silicidation was enhanced by pre-amorphization on the narrow gate and source/drain regions. TiSi/sub 2/ films, with a sheet resistance of /spl les/10 /spl Omega/sq., were stably and uniformly formed on all n/sup +/- and p/sup +/-poly-Si and source/drain diffusion layers for 0.15 /spl mu/m CMOS devices without degradation in the I-V characteristics.<<ETX>>

  • Field-Effect Transistors Using Silicon Nanowires Prepared by Electroless Chemical Etching

    Silicon nanowires, prepared by electroless chemical etching, are used to fabricate dual-gate field-effect transistors. The diameters of the nanowires vary from 40-300 nm, with a maximum aspect ratio of ~3000. Titanium silicide contacts are fabricated on single nanowires. An aluminium top-gate, combined with a back-gate, forms a dual-gate transistor. In an <i>n</i>-channel device with a nanowire diameter of ~70 nm, the output characteristics show current saturation, with a maximum current of ~100 nA. A drain-source threshold voltage exists for current flow, controlled by the gate voltage, and assists in device turn-off. The on/off current ratio is ~3000, and the subthreshold swing is ~780 mV/decade.

  • Topography and Schottky contact models applied to NiSi SALICIDE process [MOSFET applications]

    Nickel monosilicide (NiSi) is considered to be a promising candidate for the self-aligned silicide (SALICIDE) material of 65 nm node MOSFETs and beyond. Therefore, an accurate simulation method for the NiSi SALICIDE process is required in order to design the optimum device. We realize, for the first time, the integrated simulation with silicide topography and Schottky contact models, and propose a calibration strategy of contact resistance. In this paper, we demonstrate the accurate simulation results of the silicide both in terms of its topography and contact resistance for the NiSi SALICIDE process.

  • Enhancement of CMOS performance by process-induced stress

    A detailed analysis of the process-induced stress during a standard CMOS manufacturing is presented. Dependence of transistor performance on layout is attributed to the combination of stress induced by shallow trench isolation and source/drain (S/D) silicide. Based on the layout sensitivity, the effect of an individual stress component on NMOS and PMOS is identified. The optimization of transistor layout is proposed to improve the CMOS performance.

  • Formation of arsenic segregated Ytterbium and Nickel silicide using microwave annealing

    This work investigates the formation of arsenic segregated Ytterbium and Nickel silicide using low-temperature microwave annealing. Two types of dopant segregation approaches, implant-before-silicidation and implantation-through- metal, are performed to examine the electrical properties of the microwave annealed silicide. Results of current-voltage curves and dopant distribution profiles are compared with those using rapid thermal annealing.

  • Ni silicides formation: Use of Ge and Pt to study the diffusing species, lateral growth and relaxation mechanisms

    The Ni silicide formation was studied by in situ X-ray diffraction, APT and TEM through the use of either a thin layer of Ge (1 nm) deposited between the Ni film and a Si substrate or a Ni(10%Pt) film. The Ge was used as a marker for the diffusing species during Ni silicide formation and the Ni(10%Pt) allows revealing the lateral growth of NiSi.



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