Conferences related to Semiconductor-metal interfaces

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2021 IEEE Photovoltaic Specialists Conference (PVSC)

Photovoltaic materials, devices, systems and related science and technology


2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe)

Energy conversion and conditioning technologies, power electronics, adjustable speed drives and their applications, power electronics for smarter grid, energy efficiency,technologies for sustainable energy systems, converters and power supplies


2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2020 IEEE International Magnetic Conference (INTERMAG)

INTERMAG is the premier conference on all aspects of applied magnetism and provides a range of oral and poster presentations, invited talks and symposia, a tutorial session, and exhibits reviewing the latest developments in magnetism.


2020 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC)

All areas of ionizing radiation detection - detectors, signal processing, analysis of results, PET development, PET results, medical imaging using ionizing radiation


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Periodicals related to Semiconductor-metal interfaces

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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Dielectrics and Electrical Insulation, IEEE Transactions on

Electrical insulation common to the design and construction of components and equipment for use in electric and electronic circuits and distribution systems at all frequencies.


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Most published Xplore authors for Semiconductor-metal interfaces

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Xplore Articles related to Semiconductor-metal interfaces

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Buried heterostructure 2.9 THz quantum cascade lasers operating up to 77 K in continuous wave using two-dimensional surface plasmon confinement

The 17th Annual Meeting of the IEEELasers and Electro-Optics Society, 2004. LEOS 2004., 2004

We demonstrate the continuous wave operation of a 2.9 THz quantum cascade laser up to 77 K based on a novel buried waveguide geometry. A two dimensional surface plasmon mode is bound at the metal-semiconductor interface, therefore avoiding the usual lateral air confinement for the laser. This is combined with an independent electron channel via proton implantation to realise an ...


Extremely low-resistance nonalloyed ohmic contacts on molecular beam epitaxially grown p-type Ge

Electronics Letters, 1990

Extremely low-resistance nonalloyed ohmic contacts have been formed on p-type Ge grown on GaAs by molecular beam epitaxy as part of a research effort into GaAs/Ge heterojunction devices. Using evaporated Ti/Al metallisation, specific contact resistances well below 1*10/sup -8/ Omega cm/sup 2/ were achieved for heavily doped Ge (p>1*10/sup 19/ cm/sup -3/). The investigated Ge layers were grown as the ...


High-temperature stability performance of 4H-SiC Schottky diodes

2009 13th European Conference on Power Electronics and Applications, 2009

Silicon carbide 300 V-5 A Schottky diodes for high-temperature space applications have been fabricated and characterized. A reliability test, with a DC current stress at 270degC during 600 hours has demonstrated the capability to operate up to 300degC. The main point in this development was the top metallization scheme, where W was used, instead Ni, as Schottky metal, eliminating the ...


Laser annealed W/Sn contacts on N-type GaAs

Electronics Letters, 1994

The authors deal with the preparation of W/Sn/GaAs and W/Sn/Pd/GaAs contact structures. The metal layers were deposited by the sputtering method and annealing was carried out using an Nd:YAG pulsed laser. Better quality was achieved using contact structures containing palladium. The best measured contact resistance were approximately 2.1*10/sup -6/ Omega cm/sup 2/.<<ETX>>


Au(Pt)Pd ohmic contacts to p-ZnTe

Electronics Letters, 1993

Au(Pt)Pd ohmic contacts to p-ZnTe are reported, with a determination of the optimum annealing temperature and the optimum Pd layer thickness. The specific contact resistance, measured by the transmission line method, was as low as 5*10/sup -6/ Omega cm/sup -2/. This value of the specific contact resistance is two orders of magnitude lower than that of Au or Au/Pt contact ...


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Educational Resources on Semiconductor-metal interfaces

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IEEE-USA E-Books

  • Buried heterostructure 2.9 THz quantum cascade lasers operating up to 77 K in continuous wave using two-dimensional surface plasmon confinement

    We demonstrate the continuous wave operation of a 2.9 THz quantum cascade laser up to 77 K based on a novel buried waveguide geometry. A two dimensional surface plasmon mode is bound at the metal-semiconductor interface, therefore avoiding the usual lateral air confinement for the laser. This is combined with an independent electron channel via proton implantation to realise an embedded structure.

  • Extremely low-resistance nonalloyed ohmic contacts on molecular beam epitaxially grown p-type Ge

    Extremely low-resistance nonalloyed ohmic contacts have been formed on p-type Ge grown on GaAs by molecular beam epitaxy as part of a research effort into GaAs/Ge heterojunction devices. Using evaporated Ti/Al metallisation, specific contact resistances well below 1*10/sup -8/ Omega cm/sup 2/ were achieved for heavily doped Ge (p>1*10/sup 19/ cm/sup -3/). The investigated Ge layers were grown as the base region of AlGaAs/Ge/GaAs HBTs. The influence of the low base resistance on the high-frequency performance of HBTs was studied by simulations.<<ETX>>

  • High-temperature stability performance of 4H-SiC Schottky diodes

    Silicon carbide 300 V-5 A Schottky diodes for high-temperature space applications have been fabricated and characterized. A reliability test, with a DC current stress at 270degC during 600 hours has demonstrated the capability to operate up to 300degC. The main point in this development was the top metallization scheme, where W was used, instead Ni, as Schottky metal, eliminating the voltage drift and producing a stable metal-semiconductor interface. In this paper we present the development and characterization of a 300 V Schottky silicon carbide diode for the high ambient temperature of the BepiColombo Mission using 4H-SiC epitaxied wafers purchased from CREE Research, focusing on the reliability and performance limitations for the blocking stability and forward voltage degradation.

  • Laser annealed W/Sn contacts on N-type GaAs

    The authors deal with the preparation of W/Sn/GaAs and W/Sn/Pd/GaAs contact structures. The metal layers were deposited by the sputtering method and annealing was carried out using an Nd:YAG pulsed laser. Better quality was achieved using contact structures containing palladium. The best measured contact resistance were approximately 2.1*10/sup -6/ Omega cm/sup 2/.<<ETX>>

  • Au(Pt)Pd ohmic contacts to p-ZnTe

    Au(Pt)Pd ohmic contacts to p-ZnTe are reported, with a determination of the optimum annealing temperature and the optimum Pd layer thickness. The specific contact resistance, measured by the transmission line method, was as low as 5*10/sup -6/ Omega cm/sup -2/. This value of the specific contact resistance is two orders of magnitude lower than that of Au or Au/Pt contact to p-ZnTe.<<ETX>>

  • Improvement of optical nonlinear response in GaAs/AlGaAs nipi-MOW structure with Au ohmic contact

    Experiments demonstrate that the optical nonlinear response in a GaAs/AlGaAs nipi-MQW structure can be improved by introducing ohmic contacts, which electrically connect n- and p-layers. The response time is reduced by more than two orders of magnitude because of the enhanced recombination rate of photoexcited carriers, whereas the figure of merit for absorptive nonlinearity sigma /sub eh/ is kept constant and is an order of magnitude larger than that in a conventional GaAs/AlGaAs MQW structure.<<ETX>>

  • Pseudomorphic GaInP Schottky Diode and MSM detector on InP

    A high gap pseudomorphic GaInP material is used to enhance the Schottky barrier height of InP. This material leads to a Schottky diode with a barrier height of 0.8 eV, with ideality factor close to one and breakdown voltages of 200 V on undoped n type material. This diode is used to fabricate an MSM detector on InP. The device of 4*4 mu m fingers and 40 mu m/sup 2/ active surface presents a risetime of 74 ps and a FWHM of 183 ps.<<ETX>>

  • Infra-red surface plasmons on platinum silicide

    It is shown that surface plasmons (SPs) are supported on thin PtSi films. Using a prism-air gap-sample configuration, p-polarised infra-red light (3.39 mu m) has been coupled with approximately 95% efficiency to SPs on the silicide electrode of PtSi-Si Schottky barrier structures, stimulating SPs offers both a means of optically characterising silicide films and of enhancing optical absorption with a view to significantly increasing the Schottky barrier photoresponse.<<ETX>>

  • Au/Pt/Ti/Ni ohmic contacts to p-ZnTe

    Ohmic contacts of Au/Pd/Ti/Ni to p-ZnTe show a minimum specific contact resistance of 10/sup -6/ Omega cm/sup 2/ for a p-type doping level of 3*10/sup 19/ cm/sup -3/ and at an annealing temperature of 300 degrees C. The Ni and Ti layers are very effective in improving the electrical properties of these contact.<<ETX>>

  • Coherent phonon spectroscopy of semiconductor-metal interfaces

    Coherent LO and LA phonons of GaP-Au Schottky interfaces are probed with TRSHG technique. The driving mechanisms for these phonon modes are proposed. Bias- dependent carrier and phonon interaction can now be investigated in femtosecond timescale.



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