Conferences related to Semiconductor superlattices

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2021 IEEE Photovoltaic Specialists Conference (PVSC)

Photovoltaic materials, devices, systems and related science and technology


2020 59th IEEE Conference on Decision and Control (CDC)

The CDC is the premier conference dedicated to the advancement of the theory and practice of systems and control. The CDC annually brings together an international community of researchers and practitioners in the field of automatic control to discuss new research results, perspectives on future developments, and innovative applications relevant to decision making, automatic control, and related areas.


2019 IEEE Photonics Society Summer Topical Meeting Series (SUM)

The Topical Meetings of the IEEE Photonics Society are the premier conference series for exciting, new areas in photonic science, technology, and applications; creating the opportunity to learn about emerging fields and to interact with the research and technology leaders in an intimate environment.


2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)

Science, technology and applications spanning the millimeter-waves, terahertz and infrared spectral regions


2019 IEEE Photonics Conference (IPC)

The IEEE Photonics Conference, previously known as the IEEE LEOS Annual Meeting, offers technical presentations by the world’s leading scientists and engineers in the areas of lasers, optoelectronics, optical fiber networks, and associated lightwave technologies and applications. It also features compelling plenary talks on the industry’s most important issues, weekend events aimed at students and young photonics professionals, and a manufacturer’s exhibition.



Periodicals related to Semiconductor superlattices

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Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Lightwave Technology, Journal of

All aspects of optical guided-wave science, technology, and engineering in the areas of fiber and cable technologies; active and passive guided-wave componentry (light sources, detectors, repeaters, switches, fiber sensors, etc.); integrated optics and optoelectronics; systems and subsystems; new applications; and unique field trials.


Magnetics, IEEE Transactions on

Science and technology related to the basic physics and engineering of magnetism, magnetic materials, applied magnetics, magnetic devices, and magnetic data storage. The Transactions publishes scholarly articles of archival value as well as tutorial expositions and critical reviews of classical subjects and topics of current interest.



Most published Xplore authors for Semiconductor superlattices

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Xplore Articles related to Semiconductor superlattices

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Frequency multiplication due to Bloch oscillations excitation in lateral semiconductor superlattice by short THz electromagnetic pulse

Proceedings of the 2nd IEEE Conference on Nanotechnology, 2002

We have theoretically studied the frequency transformation of a strong electromagnetic pulse in lateral semiconductor superlattices associated with excitation of self-consistent electric field-driven Bloch oscillations. The necessary conditions for observation of Bloch oscillator emission of radiation have been found. The energy efficiency of the frequency multiplication and spectral composition of THz radiation transmitted through a superlattice have been calculated.


Diffusion-induced disordering of Ga/sub 0.47/In/sub 0.53/As/InP multiple quantum wells with zinc

Electronics Letters, 1988

Diffusing zinc into Ga/sub 0.47/In/sub 0.53/As/InP MQW layers is found to cause strong intermixing of the group III elements, which changes the composition in the quantum wells and barriers. As a result of this disordering the MQW bandgap is reduced in energy and the photoluminescence emission peak moves to longer wavelength.<<ETX>>


New GaAs n/sup +/-p- delta (n/sup +/)-i- delta (p/sup +/)-i-n/sup +/ switching device grown by molecular beam epitaxy

Electronics Letters, 1991

A new GaAs switching device with an n/sup +/-p- delta (n/sup +/)-i- delta (p/sup +/)-i-n/sup +/ structure has been demonstrated. An interesting S-shaped negative differential resistance (NDR) is shown to occur that originates from the avalanche multiplications within the delta (n/sup +/)-i- delta (p/sup +/)-i sawtooth doped superlattice (SDS). The excellent NDR behaviour gives the studied structure good potential for ...


THz emission of coherent plasmons in semiconductor superlattices

Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Edition. CLEO '99. Conference on Lasers and Electro-Optics (IEEE Cat. No.99CH37013), 1999

Summary form only given. Ultrafast excitation of n-doped GaAs layers leads to THz emission from coherent plasma oscillations. The emission frequency of this THz source is given by the simple plasma frequency formula /spl omega//sub p/=(ne/sup 2//m*/spl epsiv/)/sup 1/2/ where n is the number of extrinsic electrons which are confined between the surface depletion field and the GaAs substrate. The ...


Superlattices of II-V Semiconductor and Heterogeneous Magnetic Layers for CPP Magnetotransport

1998 IEEE International Magnetics Conference (INTERMAG), 1998

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Educational Resources on Semiconductor superlattices

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IEEE-USA E-Books

  • Frequency multiplication due to Bloch oscillations excitation in lateral semiconductor superlattice by short THz electromagnetic pulse

    We have theoretically studied the frequency transformation of a strong electromagnetic pulse in lateral semiconductor superlattices associated with excitation of self-consistent electric field-driven Bloch oscillations. The necessary conditions for observation of Bloch oscillator emission of radiation have been found. The energy efficiency of the frequency multiplication and spectral composition of THz radiation transmitted through a superlattice have been calculated.

  • Diffusion-induced disordering of Ga/sub 0.47/In/sub 0.53/As/InP multiple quantum wells with zinc

    Diffusing zinc into Ga/sub 0.47/In/sub 0.53/As/InP MQW layers is found to cause strong intermixing of the group III elements, which changes the composition in the quantum wells and barriers. As a result of this disordering the MQW bandgap is reduced in energy and the photoluminescence emission peak moves to longer wavelength.<<ETX>>

  • New GaAs n/sup +/-p- delta (n/sup +/)-i- delta (p/sup +/)-i-n/sup +/ switching device grown by molecular beam epitaxy

    A new GaAs switching device with an n/sup +/-p- delta (n/sup +/)-i- delta (p/sup +/)-i-n/sup +/ structure has been demonstrated. An interesting S-shaped negative differential resistance (NDR) is shown to occur that originates from the avalanche multiplications within the delta (n/sup +/)-i- delta (p/sup +/)-i sawtooth doped superlattice (SDS). The excellent NDR behaviour gives the studied structure good potential for switching device applications. Furthermore, with an adequate design, the studied structure can be applied to fabricate a new functional device.<<ETX>>

  • THz emission of coherent plasmons in semiconductor superlattices

    Summary form only given. Ultrafast excitation of n-doped GaAs layers leads to THz emission from coherent plasma oscillations. The emission frequency of this THz source is given by the simple plasma frequency formula /spl omega//sub p/=(ne/sup 2//m*/spl epsiv/)/sup 1/2/ where n is the number of extrinsic electrons which are confined between the surface depletion field and the GaAs substrate. The desired frequency can be controlled by changing the number of electrons n via the doping concentration of the material. Another possibility to determine the emission frequency /spl omega//sub p/ is to change the effective mass m* of the electrons. This can be accomplished by placing the electrons in the periodic potential of a superlattice. We study the GaAs/AlGaAs heterostructures which are three superlattices.

  • Superlattices of II-V Semiconductor and Heterogeneous Magnetic Layers for CPP Magnetotransport

    None

  • Influence of miniband electron elastic scattering on Bloch gain in semiconductor superlattices

    Applying a three-dimensional Monte Carlo technique we simulated the motion of electrons subject to static and terahertz (THz) fields in semiconductor superlattices of different miniband widths at 4 K. We assumed electrons to be scattered at polar optic and acoustic phonons, and ionized impurities. We found that impurity scattering of electrons in the superlattice with the miniband width smaller than the optic phonon energy extends significantly a frequency range with a strong Bloch gain.

  • Dynamics of charge domains in semiconductor superlattice under external periodic interference

    Effects of a periodic external signal on collective dynamics of charge in semiconductor superlattices have been studied. It has been shown that an external electric field is able to synchronize the transport of domains of high charge density, and thus electrical current through the superlattice. The synchronization phenomena are accompanied by the sharp increase of absorption on the frequency of external field, and manifest themselves in modification of current-voltage characteristics.

  • Subband-resonance oscillations in photoexcited GaAs-AlAs type-II superlattices

    Subband-resonance oscillations have been observed in photoexcited, undoped type-II GaAsAlAs superlattices. The frequency can be tuned over a wide range either by the applied voltage or the photoexcited carrier density. The oscillations are due to an oscillating domain boundary between two electric- field domains.

  • Three-terminal bistable switches in effective-mass superlattices

    Three-terminal bistable switching devices based on effective-mass superlattices are proposed and analysed. The essential feature of the device is the presence of negative resistance controlled by the small gate voltage. The threshold voltage of negative resistance is much lower and the current density is much higher than those in the resonant tunnelling diodes. Such properties are very desirable for achieving low-power ultrafast three-terminal bistable switches.<<ETX>>

  • Terahertz Bloch oscillations in semiconductor superlattices

    Bloch Oscillations (BO) in AlGaAs/GaAs superlattices were studied by Monte Carlo method. A two-dimensional model based on the effective mass approximation was used for studying electron miniband transport. Scattering on polar optical and acoustic phonons as well as impurities were taken into account. Behavior of BO was studied under different conditions such as intensity of electric field temperature and concentration of ionised impurities.



Standards related to Semiconductor superlattices

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