Conferences related to Semiconductor radiation detectors

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2020 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC)

All areas of ionizing radiation detection - detectors, signal processing, analysis of results, PET development, PET results, medical imaging using ionizing radiation


2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)

The world's premiere conference in MEMS sensors, actuators and integrated micro and nano systems welcomes you to attend this four-day event showcasing major technological, scientific and commercial breakthroughs in mechanical, optical, chemical and biological devices and systems using micro and nanotechnology.The major areas of activity in the development of Transducers solicited and expected at this conference include but are not limited to: Bio, Medical, Chemical, and Micro Total Analysis Systems Fabrication and Packaging Mechanical and Physical Sensors Materials and Characterization Design, Simulation and Theory Actuators Optical MEMS RF MEMS Nanotechnology Energy and Power


2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)

Science, technology and applications spanning the millimeter-waves, terahertz and infrared spectral regions


2019 IEEE SENSORS

The IEEE Sensors Conference is a forum for presentation, discussion, and exchange of state-of-the art information including the latest research and development in sensors and their related fields. It brings together researchers, developers, and practitioners from diverse fields including international scientists and engineers from academia, research institutes, and companies to present and discuss the latest results in the general field of sensors.

  • 2018 IEEE SENSORS

    The IEEE Sensors Conference is a forum for presentation, discussion, and exchange of state -of-the art information including the latest research and development in sensors and their relatedfields. It brings together researchers, developers, and practitioners from diverse fields includinginternational scientists and engineers from academia, research institutes, and companies topresent and discuss the latest results in the general field of sensors.

  • 2017 IEEE SENSORS

    The IEEE Sensors Conference is a forum for presentation, discussion, and exchange of state -of-the art information including the latest research and development in sensors and their relatedfields. It brings together researchers, developers, and practitioners from diverse fields includinginternational scientists and engineers from academia, research institutes, and companies topresent and discuss the latest results in the general field of sensors.

  • 2016 IEEE Sensors

    The IEEE Sensors Conference is a forum for presentation, discussion, and exchange of state -of-the art information including the latest research and development in sensors and their related fields. It brings together researchers, developers, and practitioners from diverse fields including international scientists and engineers from academia, research institutes, and companies to present and discuss the latest results in the general field of sensors.

  • 2015 IEEE Sensors

    The IEEE Sensors Conference is a forum for presentation, discussion, and exchange of state -of-the art information including the latest research and development in sensors and their related fields. It brings together researchers, developers, and practitioners from diverse fieldsincluding international scientists and engineers from academia, research institutes, and companies topresent and discuss the latest results in the general field of sensors.

  • 2014 IEEE Sensors

    The IEEE Sensors Conference is a forum for presentation, discussion, andexchange of state -of-the art information including the latest research and development in sensors andtheir related fields. It brings together researchers, developers, and practitioners from diverse fieldsincluding international scientists and engineers from academia, research institutes, and companies topresent and discuss the latest results in the general field of sensors.

  • 2013 IEEE Sensors

    The IEEE SENSORS Conference is a forum for presentation, discussion, and exchange of state -of-the art information including the latest research and development in sensors and their related fields. It brings together researchers, developers, and practitioners from diverse fields including international scientists and engineers from academia, research institutes, and companies to present and discuss the latest results in the general field of sensors.

  • 2012 IEEE Sensors

    The IEEE Sensors Conference is a forum for presentation, discussion, and exchange of state-of-the art information including the latest research and development in sensors and their related fields. It brings together researchers, developers, and practitioners from diverse fields including international scientists and engineers from academia, research institutes, and companies to present and discuss the latest results in the general field of sensors.

  • 2011 IEEE Sensors

    The IEEE Sensors Conference is a forum for presentation, discussion, and exchange of state-of-the art information including the latest research and development in sensors and their related fields. It brings together researchers, developers, and practitioners from diverse fields including international scientists and engineers from academia, research institutes, and companies to present and discuss the latest results in the general field of sensors. IEEE SENSORS 2011 will include keynote addresses by eminen

  • 2010 IEEE Sensors

    The IEEE SENSORS 2010 Conference is a forum for state-of-the-art presentations on sensors and related topics covering from theory to application, device to system, modeling to implementation and from macro/nano to scale.

  • 2009 IEEE Sensors

    IEEE Sensors Conference 2009 is intended to provide a common forum for researchers, scientists, engineers and practitioners throughout the world to present their latest research findings, ideas, developments and applications in the area of sensors and sensing technology. IEEE Sensors Conference 2009 will include keynote addresses by eminent scientists as well as special, regular and poster sessions.

  • 2008 IEEE Sensors

    IEEE SENSORS 2008 solicits original and state-of-the-art contributions to sensors and related topics, covering from theory to application, from device to system, from modeling to implementation, and from macro to micro/nano in scale. Topics of interest include,but are not limitid to: Phenomena, Modeling, and Evaluation (Novel Sensing Principles, Theory and Modeling, Sensors Characterization, Evaluation and Testing, Data Handling and Mining) Chemical and Gas Sensors (Materials, Devices, Electronics N

  • 2007 IEEE Sensors

    IEEE SENSORS 2007 solicits original and state-of-the-art contributions to sensors and related topics, covering from theory to application, from device to system, from modeling to implementation, and from macro to micro/nano in scale.

  • 2006 IEEE Sensors

  • 2005 IEEE Sensors

  • 2004 IEEE Sensors

  • 2003 IEEE Sensors

  • 2002 IEEE Sensors


2018 9th International Particle Accelerator Conference (IPAC)

Topics cover a complete survey of the field of charged particle accelerator science and technology and infrastructure.


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Periodicals related to Semiconductor radiation detectors

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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Circuits and Systems I: Regular Papers, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Circuits and Systems II: Express Briefs, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Circuits and Systems Magazine, IEEE


Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.


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Most published Xplore authors for Semiconductor radiation detectors

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Xplore Articles related to Semiconductor radiation detectors

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Silicon Photomultipliers - End of the Photomultiplier Tubes Era

LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings, 2007

The principle of silicon photomultipliers (SiPM) is discussed. The SiPM structure is based on the array of submicron semiconductor micro-cells, working in breakdown mode with integrated quenching elements and common electrode. The characteristics and the operational conditions of the SiPM is presented.


Comparison of radiation damage in silicon induced by proton and neutron irradiation

IEEE Transactions on Nuclear Science, 1999

The subject of radiation damage to Si detectors induced by 24-GeV/c protons and nuclear reactor neutrons has been studied. Detectors fabricated on single- crystal silicon enriched with various impurities have been tested. Significant differences in electrically active defects have been found between the various types of material. The results of the study suggest for the first time that the widely ...


Silicon p-n junctions as detectors for uv radiation

1964 International Electron Devices Meeting, 1964

Photoconductive and photovoltaic devices for detection of short wavelength visible and ultraviolet radiation have not previously been developed to the same extent as solid state infrared detectors. The spectral response of semiconductor devices generally exhibits a sharp drop in sensitivity with decreasing wavelength e. g. in standard Si devices, the Dλ at 4000 Å is lower than the Dλ at ...


Measurements of fluxes of thermal neutrons using detector /sup 6/LiI(Eu)-Si-Pin-Pd and a charge-sensitive preamplifier

1997 IEEE Nuclear Science Symposium Conference Record, 1997

A method is described for measurement of the flux of thermal neutrons using detectors based on a /sup 6/LiI:Eu single crystal, a Hamamatsu Si-PIN-PD of S-3590-01 type and a fast charge-sensitive preamplifier.


Semiconductor Detectors for Neutron Field Investigation

IEEE Transactions on Nuclear Science, 1977

Small semiconductor gauges 2-4 mm in diameter wish radiators made of fissile materials 6Li, 10B, 235U, were produced for investigation of neutron fields in critical assemblies. Small dimensions of the devices ensure the distortion in neutron fields in critical assemblies and experimental channels of reactors to be practically avoided. Radiation resistance of semiconductor detectors of various types to fission fragments ...


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Educational Resources on Semiconductor radiation detectors

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IEEE-USA E-Books

  • Silicon Photomultipliers - End of the Photomultiplier Tubes Era

    The principle of silicon photomultipliers (SiPM) is discussed. The SiPM structure is based on the array of submicron semiconductor micro-cells, working in breakdown mode with integrated quenching elements and common electrode. The characteristics and the operational conditions of the SiPM is presented.

  • Comparison of radiation damage in silicon induced by proton and neutron irradiation

    The subject of radiation damage to Si detectors induced by 24-GeV/c protons and nuclear reactor neutrons has been studied. Detectors fabricated on single- crystal silicon enriched with various impurities have been tested. Significant differences in electrically active defects have been found between the various types of material. The results of the study suggest for the first time that the widely used nonionizing energy loss (NIEL) factors are insufficient for normalization of the electrically active damage in case of oxygen- and carbon- enriched silicon detectors. It has been found that a deliberate introduction of impurities into the semiconductor can affect the radiation hardness of silicon detectors.

  • Silicon p-n junctions as detectors for uv radiation

    Photoconductive and photovoltaic devices for detection of short wavelength visible and ultraviolet radiation have not previously been developed to the same extent as solid state infrared detectors. The spectral response of semiconductor devices generally exhibits a sharp drop in sensitivity with decreasing wavelength e. g. in standard Si devices, the Dλ at 4000 Å is lower than the Dλ at 8000 Å by orders of magnitude and is dropping rapidly as one proceeds into the ultraviolet.

  • Measurements of fluxes of thermal neutrons using detector /sup 6/LiI(Eu)-Si-Pin-Pd and a charge-sensitive preamplifier

    A method is described for measurement of the flux of thermal neutrons using detectors based on a /sup 6/LiI:Eu single crystal, a Hamamatsu Si-PIN-PD of S-3590-01 type and a fast charge-sensitive preamplifier.

  • Semiconductor Detectors for Neutron Field Investigation

    Small semiconductor gauges 2-4 mm in diameter wish radiators made of fissile materials 6Li, 10B, 235U, were produced for investigation of neutron fields in critical assemblies. Small dimensions of the devices ensure the distortion in neutron fields in critical assemblies and experimental channels of reactors to be practically avoided. Radiation resistance of semiconductor detectors of various types to fission fragments was determined.

  • (Al,Ga,In)N-based UV and VIS photodetectors

    Developments and some key problems in (Al,Ga,In)N-based UV and VIS photodetectors are briefly reviewed. Photodetectors' response to high energy photons are described. Some applications of these photodetectors in biophotonics and combustion control are presented. It is concluded that the detectors' performance are strongly linked to materials and processing progresses in such semiconductor alloys

  • Optimal Use of Junction Isolation for Photodetection in Monolithic Integrated Optoelectronic Circuits

    The concept of optimal use of junction isolation for photodetection in integrated circuits containing a detector element and associated amplifier and logic circuits is described.

  • First results observed with test X-CT system using GaAs radiation detector working in single photon counting regime

    The aim of present work is application of novel single photon counting system for detection of gamma-rays in CT using semiconductor radiation detector based on semi-insulating (SI) GaAs compound. A simple positioning test system consisting of two stepper motors with 241 Am gamma source of 60 keV photons and single SI GaAs radiation detector operated in single photon counting mode is used for taking CT projections. First, rather preliminary results of CT reconstruction applied to imaging of inner structure of a small phantom using developed reconstruction algorithms is demonstrated

  • The design and prototyping of the ATLAS inner detector evaporative cooling system

    ATLAS is one of two general purpose LHC experiments, which consists of several sub-detector systems with the inner detector being one. The inner detector consists of the transition radiation tracker, (the TRT), the semiconductor tracker, (the SCT), and the silicon pixel detector. Only the silicon based detectors of the inner detector will be discussed here. The silicon system is based on a modular design with each detector modules dissipating up to 10 W each. The modules are grouped together to give a maximum of 250 W of power on any given cooling stave. Due to radiation damage requirements a maximum silicon temperature of -7/spl deg/C or lower is required for both systems during operation. This has to be obtained by introducing a minimal amount of extra material into the detector volume. An evaporative cooling system based on C/sub 3/F/sub 8/ has been devised and extensively tested for this purpose. The system utilizes sub-cooling to minimize the mass flow and thus pressure drops throughout the system. This paper will discuss the overall design, with motivations, present details on specific individual components and demonstrate the performance of the system as a whole.

  • Calibrating the ATLAS semiconductor tracker front end electronics

    The semiconductor tracker (SCT) will form a vital part of the ATLAS experiment, one of two general-purpose experiments for the forthcoming Large Hadron Collider (LHC) at the CERN laboratory. The active elements of the SCT are 4088 radiation-hard silicon detector modules, tiled on four barrel cylinders and eighteen end-cap disks. It will have in total more than 6 million channels each providing 1-bit binary signal discrimination every 25 nanoseconds. The SCT is currently in full production with macro-assembly taking place at several sites. During assembly, frequent quality assurance and characterization measurements are performed using the high-performance optoelectronic data acquisition system designed for the final experiment. This talk offers an overview of the data acquisition hardware, and the calibration and control systems for the electronics front-end, as well as early results from the macroconstruction.




Jobs related to Semiconductor radiation detectors

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