Conferences related to Semiconductor nanotubes

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2021 IEEE Photovoltaic Specialists Conference (PVSC)

Photovoltaic materials, devices, systems and related science and technology


2020 IEEE 70th Electronic Components and Technology Conference (ECTC)

ECTC is the premier international conference sponsored by the IEEE Components, Packaging and Manufacturing Society. ECTC paper comprise a wide spectrum of topics, including 3D packaging, electronic components, materials, assembly, interconnections, device and system packaging, optoelectronics, reliability, and simulation.


2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)

Ferroelectric materials and applications


2020 Optical Fiber Communications Conference and Exhibition (OFC)

The Optical Fiber Communication Conference and Exhibition (OFC) is the largest global conference and exhibition for optical communications and networking professionals. For over 40 years, OFC has drawn attendees from all corners of the globe to meet and greet, teach and learn, make connections and move business forward.OFC attracts the biggest names in the field, offers key networking and partnering opportunities, and provides insights and inspiration on the major trends and technology advances affecting the industry. From technical presentations to the latest market trends and predictions, OFC is a one-stop-shop.


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Periodicals related to Semiconductor nanotubes

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Computer

Computer, the flagship publication of the IEEE Computer Society, publishes peer-reviewed technical content that covers all aspects of computer science, computer engineering, technology, and applications. Computer is a resource that practitioners, researchers, and managers can rely on to provide timely information about current research developments, trends, best practices, and changes in the profession.


Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.


Computing in Science & Engineering

Physics, medicine, astronomy—these and other hard sciences share a common need for efficient algorithms, system software, and computer architecture to address large computational problems. And yet, useful advances in computational techniques that could benefit many researchers are rarely shared. To meet that need, Computing in Science & Engineering (CiSE) presents scientific and computational contributions in a clear and accessible format. ...


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


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Most published Xplore authors for Semiconductor nanotubes

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Xplore Articles related to Semiconductor nanotubes

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Time-resolved fluorescence in semiconducting single-wall carbon nanotubes

InternationalQuantum Electronics Conference, 2004. (IQEC)., 2004

Time-resolved fluorescence in single-wall carbon nanotubes (SWNTs) has been investigated by optical Kerr gating. A fast non-radiative relaxation process on 10 ps time scale was measured and a radiative lifetime of 110 ns was deduced


Carbon nanotubes for RF and microwaves

European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005, 2005

In this invited overview we provide a brief up-to-date summary of the potential applications of carbon nanotubes for RF and microwave devices and systems. We focus in particular on the use of nanotubes as ultra-high speed interconnects in integrated circuits.


Photoconductivity of single-walled carbon nanotubes under CW illumination

2003 Third IEEE Conference on Nanotechnology, 2003. IEEE-NANO 2003., 2003

The photoconductive response of single-walled carbon nanotubes (SWNTs) has been studied under CW illumination in the NIR (900-1800 nm) and far-IR (9-10 /spl mu/m) range. SWNTs were coated onto patterned gold electrodes with spacing which was varied from 5 to 300 nm. SWNT samples exhibit absorption NIR bands that are typical for semiconducting nanotubes with a diameter distribution of 0.8-1.1 ...


Three-dimensional simulations of field emission through an oscillating barrier from carbon nanotubes

IVMC 2001. Proceedings of the 14th International Vacuum Microelectronics Conference (Cat. No.01TH8586), 2001

We present simulations of field emission from carbon nanotubes irradiated with electromagnetic waves. The two structures considered are the (5,5) and (10,0) carbon nanotubes. The total-energy distribution of field-emitted electrons and the efficiency of the photon-stimulation process depend on factors that are discussed.


Electrical sorting of carbon nanotube transistors for mass-producible bio-sensors

2007 International Semiconductor Device Research Symposium, 2007

This paper reports useful fabrication scheme customized for biosensing application by adopting the Collins approach of electrical breakdown (Collins, 2001) with some modification to improve the fabrication cost and reduce fabrication time.The electrical breakdown scheme was modified to increase the yield of electrical sorting and reduce sorting time, which is very important in real mass-production. CNTFETs were fabricated using the ...


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Educational Resources on Semiconductor nanotubes

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IEEE-USA E-Books

  • Time-resolved fluorescence in semiconducting single-wall carbon nanotubes

    Time-resolved fluorescence in single-wall carbon nanotubes (SWNTs) has been investigated by optical Kerr gating. A fast non-radiative relaxation process on 10 ps time scale was measured and a radiative lifetime of 110 ns was deduced

  • Carbon nanotubes for RF and microwaves

    In this invited overview we provide a brief up-to-date summary of the potential applications of carbon nanotubes for RF and microwave devices and systems. We focus in particular on the use of nanotubes as ultra-high speed interconnects in integrated circuits.

  • Photoconductivity of single-walled carbon nanotubes under CW illumination

    The photoconductive response of single-walled carbon nanotubes (SWNTs) has been studied under CW illumination in the NIR (900-1800 nm) and far-IR (9-10 /spl mu/m) range. SWNTs were coated onto patterned gold electrodes with spacing which was varied from 5 to 300 nm. SWNT samples exhibit absorption NIR bands that are typical for semiconducting nanotubes with a diameter distribution of 0.8-1.1 nm and band at /spl sim/10 /spl mu/m in the far-IR range. A clear correlation between current and IR exposure has been observed. The detection of photoconductivity requires instrumentation with a high dynamic range due to a significant dark current. The photocurrent exhibits a linear response with light intensity and with bias voltage. Possible mechanisms of photoconductivity in SWNT films and applications of this new photosensitive material are discussed.

  • Three-dimensional simulations of field emission through an oscillating barrier from carbon nanotubes

    We present simulations of field emission from carbon nanotubes irradiated with electromagnetic waves. The two structures considered are the (5,5) and (10,0) carbon nanotubes. The total-energy distribution of field-emitted electrons and the efficiency of the photon-stimulation process depend on factors that are discussed.

  • Electrical sorting of carbon nanotube transistors for mass-producible bio-sensors

    This paper reports useful fabrication scheme customized for biosensing application by adopting the Collins approach of electrical breakdown (Collins, 2001) with some modification to improve the fabrication cost and reduce fabrication time.The electrical breakdown scheme was modified to increase the yield of electrical sorting and reduce sorting time, which is very important in real mass-production. CNTFETs were fabricated using the patterned catalyst growth technique, and source and drain electrodes were defined using photolithography and lift-off process. Then electrical sorting was performed in ambient condition.

  • Carbon nanotube Schottky diodes for high frequency applications

    We have developed Schottky diodes using semiconducting nanotubes with titanium Schottky and platinum Ohmic contacts. At low biases these diodes showed ideality factors in the range of 1.5 to 1.9. The performance prediction as room-temperature detectors at 2.5 THz resulted in NEP potentially comparable to that of the state-of-the-art gallium arsenide solid-state Schottky diodes in the range of 10/sup -13/ W//spl radic/Hz.

  • Raman scattering from individual, isolated metallic carbon nanotubes

    We have obtained Raman spectra of the high-energy (G) modes from individual metallic carbon nanotubes. The Raman lines are broadened to widths up to 100 cm,<sup>-1</sup>, indicating strong phonon damping by electron-hole pairs.

  • Nanotubes with chiral symmetry placed in a transverse electric field as a new type of superlattice

    Electron motion in a helicoidal (chiral) nanotube is shown to correspond to a de Broglie wave propagating along a helicoidal line on the nanotube wall. This helical motion leads to periodicity of the electron potential energy in the presence of an electric field normal to the nanotube axis. The period of this potential is proportional to the nanotube radius and is greater than the interatomic distance in the nanotube. As a result, the behavior of an electron in helicoidal nanotubes subject to a transverse electric field is similar to that in a semiconductor superlattice. In particular, Bragg scattering of electrons from the long-range periodic potential results in the opening of gaps in the energy spectrum of the nanotube. Modification of the bandstructure raises the possibility of applying this effect to novel nanoelectronic devices.

  • The development of nanosensors for space applications

    This report concentrates on the enabling capabilities and products that could impact robotic and human exploration of space. The objectives of the report is to review of state of the art, define the major challenges, and develop near- and long-term goals. The main attention concentrates on nanosensors, nanoaccelerometer. This report discusses the basic concepts of, and developments in, the field of optical nanosensors and nanobiosensors. After a brief overview of the techniques for fabricating nanometer-sized optical fibers, we describe the various types of transducer and bioreceptor molecule presently used for nanosensor and nanobiosensor fabrication. eters, micro- energetic devices and nano-robotics.

  • Scalable Modeling of Magnetic Inductance in Carbon Nanotube Bundles for VLSI Interconnect

    In this paper, we develop accurate and scalable models for the magnetic inductance in bundles of single-walled carbon nanotubes, which have been proposed as a means to alleviate the increasingly critical resistance problems associated with traditional copper interconnect in VLSI applications. The models consider the density and statistical distribution of both metallic and semiconducting nanotubes within the bundle. We evaluate the speed, accuracy and scalability of our magnetic inductance modeling techniques and previously proposed inductance models. The inductance model with the best performance evaluates the magnetic inductance of nanotube bundles with typical errors of less than 0.8 percent when compared with modeling each nanotube individually and provides orders of magnitude improvement in CPU time as the bundle size increases.



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