Conferences related to Semiconductor nanostructures

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2021 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.

  • 2007 IEEE International Electron Devices Meeting (IEDM)

  • 2008 IEEE International Electron Devices Meeting (IEDM)

    Over the last 53 years, the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart-power technologies, etc.

  • 2009 IEEE International Electron Devices Meeting (IEDM)

    CMOS Devices Technology, Characterization, REliability and Yield, Displays, sensors and displays, memory technology, modeling and simulation, process technology, solid state and nanoelectronic devices

  • 2010 IEEE International Electron Devices Meeting (IEDM)

  • 2011 IEEE International Electron Devices Meeting (IEDM)

    CMOS Devices Technology, Characterization, Reliability and Yield, Displays, sensors and displays, memory technology, modeling and simulation, process technology, solid state and nanoelectronic devices.

  • 2012 IEEE International Electron Devices Meeting (IEDM)

  • 2013 IEEE International Electron Devices Meeting (IEDM)

    IEDM is the world s pre-eminent forum for reporting technological breakthroughs in the areas of semiconductor and electronic device technology, design, manufacturing, physics, and modeling. IEDM is the flagship conference for nanometer-scale CMOS transistor technology, advanced memory, displays, sensors, MEMS devices, novel quantum and nano-scale devices and phenomenology, optoelectronics, devices for power and energy harvesting, high-speed devices, as well as process technology and device modeling and simulation.

  • 2014 IEEE International Electron Devices Meeting (IEDM)

    IEDM is the world s pre-eminent forum for reporting technological breakthroughs in the areas of semiconductor and electronic device technology, design, manufacturing, physics, and modeling. IEDM is the flagship conference for nanometer-scale CMOS transistor technology, advanced memory, displays, sensors, MEMS devices, novel quantum and nano-scale devices and phenomenology, optoelectronics, devices for power and energy harvesting, high-speed devices, as well as process technology and device modeling and simulation.

  • 2015 IEEE International Electron Devices Meeting (IEDM)

    the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart-power technologies, etc.

  • 2017 IEEE International Electron Devices Meeting (IEDM)

    the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.

  • 2019 IEEE International Electron Devices Meeting (IEDM)

    the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2021 IEEE Photovoltaic Specialists Conference (PVSC)

Photovoltaic materials, devices, systems and related science and technology


2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)

Ferroelectric materials and applications


2020 Optical Fiber Communications Conference and Exhibition (OFC)

The Optical Fiber Communication Conference and Exhibition (OFC) is the largest global conference and exhibition for optical communications and networking professionals. For over 40 years, OFC has drawn attendees from all corners of the globe to meet and greet, teach and learn, make connections and move business forward.OFC attracts the biggest names in the field, offers key networking and partnering opportunities, and provides insights and inspiration on the major trends and technology advances affecting the industry. From technical presentations to the latest market trends and predictions, OFC is a one-stop-shop.


2020 IEEE International Symposium on Antennas and Propagation and North American Radio Science Meeting

The joint meeting is intended to provide an international forum for the exchange of information on state of the art research in the area of antennas and propagation, electromagnetic engineering and radio science



Periodicals related to Semiconductor nanostructures

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Display Technology, Journal of

This publication covers the theory, design, fabrication, manufacturing and application of information displays and aspects of display technology that emphasize the progress in device engineering, device design, materials, electronics, physics and reliabilityaspects of displays and the application of displays.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Lightwave Technology, Journal of

All aspects of optical guided-wave science, technology, and engineering in the areas of fiber and cable technologies; active and passive guided-wave componentry (light sources, detectors, repeaters, switches, fiber sensors, etc.); integrated optics and optoelectronics; systems and subsystems; new applications; and unique field trials.


Magnetics, IEEE Transactions on

Science and technology related to the basic physics and engineering of magnetism, magnetic materials, applied magnetics, magnetic devices, and magnetic data storage. The Transactions publishes scholarly articles of archival value as well as tutorial expositions and critical reviews of classical subjects and topics of current interest.


Nanotechnology, IEEE Transactions on

The proposed IEEE Transactions on Nanotechnology will be devoted to the publication of manuscripts of archival value in the general area of nanotechnology, that is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.



Most published Xplore authors for Semiconductor nanostructures

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Xplore Articles related to Semiconductor nanostructures

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Near-field imaging and spectroscopy of localized and delocalized excitons in semiconductor nanostructures

Technical Digest. CLEO/Pacific Rim 2001. 4th Pacific Rim Conference on Lasers and Electro-Optics (Cat. No.01TH8557), 2001

We resolve the characteristic emission features of excitons in a single GaAs quantum wire using near-field photoluminescence spectroscopy. We report emission from both localized excitons and quasi-one-dimensional excitons that are delocalized over a length of up to several /spl mu/m.


Detectors of microwave and terahertz radiation on the basis of semiconductor nanostructures

2009 European Microwave Conference (EuMC), 2009

Experimental results of electromagnetic radiation detection in wide frequency range using planar diode having asymmetrically necked semiconductor structure are presented. Electromotive force is induced across the diode due to nonuniform free carrier heating under the action of radiation. MBE grown selectively doped AlGaAs/GaAs as well as AlGaAs/InGaAs/GaAs structures are used for fabrication of the planar diodes. Voltage-power characteristics of the ...


Rectifying effect in boron nanowire device

2003 Third IEEE Conference on Nanotechnology, 2003. IEEE-NANO 2003., 2003

Ni and Ti have been used as contact electrodes to the crystalline boron nanowires synthesized by catalyzed chemical vapor deposition method. Three- terminal electrical measurements showed that boron nanowire behaves as p-type semiconductor. Ni forms ohmic contact to the nanowire and Ti-nanowire forms Schottky junction. Rectifying effect has been observed for devices with Ni as one electrode and Ti as ...


Atomistic Tight-Binding Approaches to Quantum Transport

2009 13th International Workshop on Computational Electronics, 2009

We discuss atomistic approaches to quantum transport within the semi-empirical tight-binding framework. We show that the latter is well suited to the study of present nanostructures such as carbon nanotubes, semiconductor nanowires and graphene. It indeed provides a very good balance between accuracy and efficiency, and can be coupled with ab initio methods to upscale the calculations to the mesoscopic ...


Mesoscopic and microscopic spin injection, spin precession, spin diffusion and spin transport in semiconductor nanostructures

5th IEEE Conference on Nanotechnology, 2005., 2005

Summary form only given. Presents the author's latest comprehensive theoretical investigations on spin kinetics of semiconductor quantum wells, quantum wires and quantum dots based on microscopic many-body and single particle approaches as well as mesoscopic approach under various conditions, such as temperature, external static electric and magnetic fields, THz radiations, confinement of the structure, strain etc. Both transient and steady-state ...



Educational Resources on Semiconductor nanostructures

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IEEE-USA E-Books

  • Near-field imaging and spectroscopy of localized and delocalized excitons in semiconductor nanostructures

    We resolve the characteristic emission features of excitons in a single GaAs quantum wire using near-field photoluminescence spectroscopy. We report emission from both localized excitons and quasi-one-dimensional excitons that are delocalized over a length of up to several /spl mu/m.

  • Detectors of microwave and terahertz radiation on the basis of semiconductor nanostructures

    Experimental results of electromagnetic radiation detection in wide frequency range using planar diode having asymmetrically necked semiconductor structure are presented. Electromotive force is induced across the diode due to nonuniform free carrier heating under the action of radiation. MBE grown selectively doped AlGaAs/GaAs as well as AlGaAs/InGaAs/GaAs structures are used for fabrication of the planar diodes. Voltage-power characteristics of the diodes are measured in frequency range from 10 GHz up to 3 THz.

  • Rectifying effect in boron nanowire device

    Ni and Ti have been used as contact electrodes to the crystalline boron nanowires synthesized by catalyzed chemical vapor deposition method. Three- terminal electrical measurements showed that boron nanowire behaves as p-type semiconductor. Ni forms ohmic contact to the nanowire and Ti-nanowire forms Schottky junction. Rectifying effect has been observed for devices with Ni as one electrode and Ti as the other one.

  • Atomistic Tight-Binding Approaches to Quantum Transport

    We discuss atomistic approaches to quantum transport within the semi-empirical tight-binding framework. We show that the latter is well suited to the study of present nanostructures such as carbon nanotubes, semiconductor nanowires and graphene. It indeed provides a very good balance between accuracy and efficiency, and can be coupled with ab initio methods to upscale the calculations to the mesoscopic limit. We discuss the implementation of the quantum Kubo-Greenwood and Green functions approaches, and some applications to carbon nanotubes, graphene and semiconductor nanowires.

  • Mesoscopic and microscopic spin injection, spin precession, spin diffusion and spin transport in semiconductor nanostructures

    Summary form only given. Presents the author's latest comprehensive theoretical investigations on spin kinetics of semiconductor quantum wells, quantum wires and quantum dots based on microscopic many-body and single particle approaches as well as mesoscopic approach under various conditions, such as temperature, external static electric and magnetic fields, THz radiations, confinement of the structure, strain etc. Both transient and steady-state transports are addressed. In addition to the cases near the equilibrium, spin kinetics far away from the equilibrium such as electrons of high spin polarization and/or electrons under strong electric field (hot electrons) is also discussed in detail. Good agreements with the available experiments are presented and many novel effects are predicted.

  • Nanowires for Subwavelength Waveguides

    One dimensional semiconducting and metal nanostructures were demonstrated as optical or plasmonic waveguides for subwavelength photonic integration. Model structures built from these subwavelength waveguides are used to illustrate electromagnetic coupling between semiconducting and metallic cavities.

  • Polymer coatings on nano-structured semiconductor surfaces

    We present a method of encasing a layer of freestanding nanostructures with an insulating photo-crosslinked polystyrene (PS) thin film that is flexible and transparent to visible light. In this simple and inexpensive procedure, polystyrene dissolved in toluene is applied by spin-coating in ambient air and immobilized by ultraviolet light. Because the film is crosslinked it is insoluble and will not intermix with other applied films that might compromise the insulation of the layer. We used the film to prepare a heterojunction UV light emitting diode from vertically aligned ZnO nanorods grown on the conductive surface of SnO<inf>2</inf>-coated glass. In this application overall film thickness was about one micrometer and at the nanorod tips it was in the order of tens of nanometers. The tips of the nanorods could be exposed by oxygen plasma and contacted directly by other films. The PS film may be a single layer or a composite built of many layers. We report relationships between layer thickness and solution concentration and viscosity for 280 kg/mol and 1800 kg/mol PS that allow for a general recipe for use on freestanding nanostructures of varying dimensions and packing densities.

  • Giant optical activity of planar chiral nanostructures and circularly-polarized light emission

    We demonstrated large optical activity in the zeroth-order transmission with metal and dielectric planar chiral nanogratings enhanced by surface-plasmon or waveguide resonances; and observed circularly-polarized emission from the semiconductor chiral nanogratings with quantum dots.

  • Effects of interdiffusion on the Photoluminescence of ternary and quaternary semiconductor nanostructures interpreted

    During epitaxial growth and processing, III-V nanostructures are likely to undergo several periods' high temperature cycling which lead to interdiffusion of the elements involved. Recently unusual experimental Photoluminescence (PL) results of annealing of the important InGaAs/InP quantum wells have been reported, where the PL peak energy increases monotonically on annealing at higher temperatures while it moves through an inflexion at lower temperatures. An explanation of these strange PL observations remained unestablished. The paper will present a detailed study on the annealing and interdiffusion of InGaAs/InP QWs to find out the changes of the band offset ratios and their effects on the resultant PL peaks.

  • Solar-Cell Squabble

    This article deals with the organic photovoltaics that could be dirt cheap, but their efficiency is in dispute. Spurring all this interest was the promise of a much cheaper and more versatile source of solar power. Unlike traditional semiconductors such as silicon, this newer class of PV employs carbon-based plastics, dyes, and nanostructures and can be manufactured via a printing processthat would be far cheaper than the high-temperature vacuum processing used for inorganics.



Standards related to Semiconductor nanostructures

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No standards are currently tagged "Semiconductor nanostructures"