Conferences related to Semiconductor materials

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2021 IEEE Photovoltaic Specialists Conference (PVSC)

Photovoltaic materials, devices, systems and related science and technology


2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe)

Energy conversion and conditioning technologies, power electronics, adjustable speed drives and their applications, power electronics for smarter grid, energy efficiency,technologies for sustainable energy systems, converters and power supplies


2020 IEEE 70th Electronic Components and Technology Conference (ECTC)

ECTC is the premier international conference sponsored by the IEEE Components, Packaging and Manufacturing Society. ECTC paper comprise a wide spectrum of topics, including 3D packaging, electronic components, materials, assembly, interconnections, device and system packaging, optoelectronics, reliability, and simulation.


2020 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC)

All areas of ionizing radiation detection - detectors, signal processing, analysis of results, PET development, PET results, medical imaging using ionizing radiation


2020 Optical Fiber Communications Conference and Exhibition (OFC)

The Optical Fiber Communication Conference and Exhibition (OFC) is the largest global conference and exhibition for optical communications and networking professionals. For over 40 years, OFC has drawn attendees from all corners of the globe to meet and greet, teach and learn, make connections and move business forward.OFC attracts the biggest names in the field, offers key networking and partnering opportunities, and provides insights and inspiration on the major trends and technology advances affecting the industry. From technical presentations to the latest market trends and predictions, OFC is a one-stop-shop.



Periodicals related to Semiconductor materials

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Biomedical Engineering, IEEE Transactions on

Broad coverage of concepts and methods of the physical and engineering sciences applied in biology and medicine, ranging from formalized mathematical theory through experimental science and technological development to practical clinical applications.


Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.


Computing in Science & Engineering

Physics, medicine, astronomy—these and other hard sciences share a common need for efficient algorithms, system software, and computer architecture to address large computational problems. And yet, useful advances in computational techniques that could benefit many researchers are rarely shared. To meet that need, Computing in Science & Engineering (CiSE) presents scientific and computational contributions in a clear and accessible format. ...


Design & Test of Computers, IEEE

IEEE Design & Test of Computers offers original works describing the methods used to design and test electronic product hardware and supportive software. The magazine focuses on current and near-future practice, and includes tutorials, how-to articles, and real-world case studies. Topics include IC/module design, low-power design, electronic design automation, design/test verification, practical technology, and standards. IEEE Design & Test of ...



Most published Xplore authors for Semiconductor materials

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Xplore Articles related to Semiconductor materials

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QDs and Nanowires: What About Surface Fermi Level Pinning?

2006 Sixth IEEE Conference on Nanotechnology, 2006

None


Schottky-barrier diodes for electron-beam-semiconductor applications

1973 International Electron Devices Meeting, 1973

Electron-beam-semiconductor (EBS) targets can be constructed from pn-junction or Schottky-barrier diodes. Most applications described so far have employed the first type of diode. This paper describes the performance and current-gain calculations for Schottky-barrier EBS targets. Experiments and theory show that the current gain of Schottky-barrier diodes is generally greater than that of pn-junctions. Approximate calculations also indicate that the absence ...


Correlation between photoluminescent and electroluminescent efficiency in gallium phosphide

1968 International Electron Devices Meeting, 1968

The most important device parameter of an electroluminescent diode is the external quantum efficiency. This in turn is influenced by the properties of the junction (injection efficiency), by the recombination processes in the bulk material (recombination efficiency), and by the optical properties of the semiconductor (optical efficiency). This paper shows how the three effects can be separated by measuring photoluminescent ...


Advances In High Performance Multijunction III-V Solar Cells

Electro International, 1991, 1991

This paper provides a discussion of current progress in III-V multijunction solar cells. A review of tandem cell principles is first presented, followed by a review of current research results reported by several active groups. Structures yielding efficiencies in the range of 25% to 35% are discussed. A brief discussion of the attainable efficiency in a three-junction approach is presented.


Ultra-High-Mobility Gallium Arsenide OMVPE-Prepared from Trimethylgallium and Arsine

Sixth International Conference Metalorganic Vapor Phase Epitaxy, 1992

None



Educational Resources on Semiconductor materials

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IEEE-USA E-Books

  • QDs and Nanowires: What About Surface Fermi Level Pinning?

    None

  • Schottky-barrier diodes for electron-beam-semiconductor applications

    Electron-beam-semiconductor (EBS) targets can be constructed from pn-junction or Schottky-barrier diodes. Most applications described so far have employed the first type of diode. This paper describes the performance and current-gain calculations for Schottky-barrier EBS targets. Experiments and theory show that the current gain of Schottky-barrier diodes is generally greater than that of pn-junctions. Approximate calculations also indicate that the absence of the p+ layer increases significantly the maximum operating frequency of these diodes. The measured current gain characteristics for silicon, gallium- arsenide and gallium-arsenide-phosphide (Ga As<inf>0.7</inf>P<inf>0.3</inf>) Schottky-barrier EBS targets are in excellent agreement with theory. Typical current-gains are in the range of 2000 at beam voltages of 12 kv. The performances of the Schottky diodes are compared with those of pn-Junctions for the three semiconductor materials. An important result of these experiments is the derivation of the energies per electron-hole pair for gallium-arsenide (4.6 ev) and gallium-arsenide-phosphide (4.8 ev). It is also shown that Schottky-barrier EBS targets are better suited for measurement of those energies than pn-junctions.

  • Correlation between photoluminescent and electroluminescent efficiency in gallium phosphide

    The most important device parameter of an electroluminescent diode is the external quantum efficiency. This in turn is influenced by the properties of the junction (injection efficiency), by the recombination processes in the bulk material (recombination efficiency), and by the optical properties of the semiconductor (optical efficiency). This paper shows how the three effects can be separated by measuring photoluminescent efficiencies in various dielectric media along with electroluminescent efficiencies and Hall parameters. The external electroluminescent quantum efficiency of the diode can be predicted from measurements on the annealed wafers on the basis of the above information.

  • Advances In High Performance Multijunction III-V Solar Cells

    This paper provides a discussion of current progress in III-V multijunction solar cells. A review of tandem cell principles is first presented, followed by a review of current research results reported by several active groups. Structures yielding efficiencies in the range of 25% to 35% are discussed. A brief discussion of the attainable efficiency in a three-junction approach is presented.

  • Ultra-High-Mobility Gallium Arsenide OMVPE-Prepared from Trimethylgallium and Arsine

    None

  • Nanoelectronics challenges for the 21st century

    Summary form only given. Leading edge CMOS technologies today are unique examples of nanoscale engineering at an industrial scale. As we celebrate this remarkable achievement of our industry that forms the ever-expanding technology basis of modern society we cannot help but ponder the question of how we can continue to push the envelope of nano-electronics. With the end of Si FET scaling appearing increasingly near, searching for more scalable transistor structures in Si and in ¿beyond-Si¿ solutions has become imperative; from relatively ¿easy¿ transitions to non-planar Si structures, to the incorporation of high mobility semiconductors, like Ge and III-V's, to even higher mobility new materials such as carbon nanotubes, graphene, or other molecular structures. And even further, there are searches for new information representation and processing concepts beyond charge in FETs, as for example, in spin-state devices. Of course, declaring silicon dead is premature at best, and with this in mind I will discuss the challenges and possible scenaria for the introduction of novel nano-electronic devices.

  • Optical absorption, gain and lasing in ZnSe

    Summary form only given. Different mechanisms were discussed to be relevant for the physical nature of gain in II-VI semiconductors. Since lasing was found to appear in the vicinity of the the exciton and according to the large exciton binding in comparison to the III-V materials different excitonic scattering processes (ex-ex, ex-LO phonon, biexcitons) were discussed, depending on the material composition, the geometry of the investigated heterostructures (bulk, quantum wells and superlattices) and on the temperature. Otherwise there are different experi ments for temperatures around and above 77K, were an electron-hole plasma recombination has been supported to be the dominant mechanism of gain and lasing as it is found for the III-V materials. In this paper we address this question from the theoretical point of view, whether excitonic absorption and gain can coexist in a dense electron-hole plasma at 77K. To give an answer a theoretical approach has to contain both (i) an appropriate description of the excitonic absorption including all relevant many-body effects and (ii) to guarantee the correct position of the chemical potential of carriers, fixing the transition from absorption to gain, and (iii) to include not only field driven but relaxed excitons too.

  • Direct wafer bonding of III-V compound semiconductors for free-material and free-orientation integration

    This paper describes the use of direct wafer bonding technique to implement the novel concept of "free-material and free-orientation integration" which we propose. The technique is applied for various wafer combinations of an InGaAsP material system, and the properties of the bonded structures are studied in terms of the crystalline and electrical characterization through transmission electron microscope, X-ray diffraction, and so on. This technique's advantage for use in the fabrication of lattice-mismatched structures is confirmed by the crystalline characterization, together with its second advantage of enabling bonded structures with an orientation mismatch, is investigated. The high crystalline quality of the bonded structures with both lattice and orientation mismatches is proved, and the electrical property of the bonded interface is examined for some of them. We show a practicability in a laser fabricated on a lattice- and orientation-mismatched structure by direct bonding. The results demonstrate the remarkable feasibility of using the direct wafer bonding technique to obtain integrated structures of material- and orientation-mismatched wafers with satisfactory quality.

  • MOVPE technology

    Layered semiconductor devices consisting of III-V or II-VI materials instead of Si are gaining more and more importance in the field of modern electronics. For example, telecommunication supported by optoelectronic devices is presently one of the most important and rapidly evolving field of advanced high-technology, device applications for III-V based compounds are for instance HEMTs, LEDs, lasers, OEICs, MMICs, HBTs, satellite-bound solar cells with high efficiency etc.; device applications for II-VI materials lie in the field of visible light detectors, infrared detectors, tuneable lasers, LEDs, etc.<<ETX>>

  • Challenges and Opportunities of III-V Nanoelectronics for Future Logic Applications (Plenary Talk)

    None



Standards related to Semiconductor materials

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No standards are currently tagged "Semiconductor materials"