Conferences related to Semiconductor device noise

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2023 Annual International Conference of the IEEE Engineering in Medicine & Biology Conference (EMBC)

The conference program will consist of plenary lectures, symposia, workshops and invitedsessions of the latest significant findings and developments in all the major fields of biomedical engineering.Submitted full papers will be peer reviewed. Accepted high quality papers will be presented in oral and poster sessions,will appear in the Conference Proceedings and will be indexed in PubMed/MEDLINE.


2020 IEEE 70th Electronic Components and Technology Conference (ECTC)

ECTC is the premier international conference sponsored by the IEEE Components, Packaging and Manufacturing Society. ECTC paper comprise a wide spectrum of topics, including 3D packaging, electronic components, materials, assembly, interconnections, device and system packaging, optoelectronics, reliability, and simulation.


2020 IEEE Applied Power Electronics Conference and Exposition (APEC)

APEC focuses on the practical and applied aspects of the power electronics business. Not just a power designer’s conference, APEC has something of interest for anyone involved in power electronics including:- Equipment OEMs that use power supplies and converters in their equipment- Designers of power supplies, dc-dc converters, motor drives, uninterruptable power supplies, inverters and any other power electronic circuits, equipments and systems- Manufacturers and suppliers of components and assemblies used in power electronics- Manufacturing, quality and test engineers involved with power electronics equipment- Marketing, sales and anyone involved in the business of power electronic- Compliance engineers testing and qualifying power electronics equipment or equipment that uses power electronics


2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2020 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC)

All areas of ionizing radiation detection - detectors, signal processing, analysis of results, PET development, PET results, medical imaging using ionizing radiation


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Periodicals related to Semiconductor device noise

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Advanced Packaging, IEEE Transactions on

The IEEE Transactions on Advanced Packaging has its focus on the modeling, design, and analysis of advanced electronic, photonic, sensors, and MEMS packaging.


Aerospace and Electronic Systems Magazine, IEEE

The IEEE Aerospace and Electronic Systems Magazine publishes articles concerned with the various aspects of systems for space, air, ocean, or ground environments.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Biomedical Circuits and Systems, IEEE Transactions on

The Transactions on Biomedical Circuits and Systems addresses areas at the crossroads of Circuits and Systems and Life Sciences. The main emphasis is on microelectronic issues in a wide range of applications found in life sciences, physical sciences and engineering. The primary goal of the journal is to bridge the unique scientific and technical activities of the Circuits and Systems ...


Biomedical Engineering, IEEE Transactions on

Broad coverage of concepts and methods of the physical and engineering sciences applied in biology and medicine, ranging from formalized mathematical theory through experimental science and technological development to practical clinical applications.


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Most published Xplore authors for Semiconductor device noise

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Xplore Articles related to Semiconductor device noise

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Calculation of gain and noise with dead space for GaAs and Al/sub x/Ga/sub 1-x/As avalanche photodiode

IEEE Transactions on Electron Devices, 2002

It is well known that, as a result of the nonlocal nature of impact ionization, the noise of avalanche photodiodes decreases as the thickness of the multiplication region is reduced. In this paper, we present an alternative technique to calculate the gain distribution, including the dead-space effect, by numerical solution of the recursive equations. This method yields the average gain, ...


Hierarchical 2-D DD and HD noise simulations of Si and SiGe devices II. Results

IEEE Transactions on Electron Devices, 2002

For pt. I see ibid., vol. 49, pp. 1250-1257 (2002). Terminal current noise is investigated with Langevin-type drift-diffusion (DD) and hydrodynamic (HD) noise models for one-dimensional (1-D) N/sup +/ NN/sup +/ and P/sup +/ PP/sup +/ structures and a realistic two-dimensional (2-D) SiGe NPN HBT. The new noise models, which are suitable for technology computer aided design (TCAD), are validated ...


An electrical design methodology for multi-chip modules

[1992 Proceedings] Electrical Performance of Electronic Packaging, 1992

None


Hierarchical 2-D DD and HD noise simulations of Si and SiGe devices. I. Theory

IEEE Transactions on Electron Devices, 2002

Langevin-type two-dimensional (2-D) bipolar drift-diffusion (DD) and hydrodynamic (HD) noise models are presented for Si and SiGe devices, which are based on the new concept of modified Langevin forces, which ensure that the DD and HD models exactly reproduce the fluctuations of the full-band Monte Carlo (MC) model under homogeneous bulk conditions. All transport and noise parameters are generated by ...


An Integrated High Performance Mixed Signal IF-to-Digital Converter

ESSCIRC '96: Proceedings of the 22nd European Solid-State Circuits Conference, 1996

A single `chip' IF-to-Digital converter sub-system containing Low Noise Amplifiers, AGC, down-conversion mixers, oscillators, baseband amplifiers, references and an A/D converte is presented. Mixed analog-digital circuit design and packaging techniques achieve a high level of integration using standard semiconductor processes. Measured results show that the IC can operate on IF signals between 30MHz-85MHz and decode transmissions up to 64QAM either ...


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Educational Resources on Semiconductor device noise

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IEEE.tv Videos

26th Annual MTT-AP Symposium and Mini Show - Dr. Ajay Poddar
Non-Volatile Memory Array Based Quantization - Wen Ma - ICRC San Mateo, 2019
ASC-2014 SQUIDs 50th Anniversary: 2 of 6 - John Clarke - The Ubiquitous SQUID
A Fully Integrated 75-83GHz FMCW Synthesizer for Automotive Radar Applications with -97dBc/Hz Phase Noise at 1MHz Offset and 100GHz/mSec Maximal Chirp Rate: RFIC Industry Showcase 2017
Fairchild Semiconductor:
Semiconductor Laser Development at Hisense Photonics - Yanfeng Lao - IPC 2018
Overview of SDRJ - Yoshihiro Hayashi at INC 2019
2015 IEEE Honors: IEEE Jun-ichi Nishizawa Medal - Dimitri A. Antoniadis
Electronic Systems for Quantum Computation - David DiVincenzo: 2016 International Conference on Rebooting Computing
IMS 2011 Microapps - A Comparison of Noise Parameter Measurement Techniques
The Era of AI Hardware - 2018 IEEE Industry Summit on the Future of Computing
Noise Enhanced Information Systems: Denoising Noisy Signals with Noise
IMS 2011 Microapps - Ultra Low Phase Noise Measurement Technique Using Innovative Optical Delay Lines
ISEC 2013 Special Gordon Donaldson Session: Remembering Gordon Donaldson - 7 of 7 - SQUID-based noise thermometers for sub-Kelvin thermometry
IMS 2011 Microapps - Beyond the S-Parameter: The Benefits of Nonlinear Device Models
Micrel Ripple Blocker
IMS 2012 Microapps - Phase Noise Choices in Signal Generation: Understanding Needs and Tradeoffs Riadh Said, Agilent
IMS 2012 Special Sessions: The Evolution of Some Key Active and Passive Microwave Components - E. C. Niehenke
MicroApps: Phase Noise, Allan Variance, and Frequency Reference (Agilent Technologies)
The Future of Semiconductor: Moore's Law Plus - IEEE Rebooting Computing Industry Summit 2017

IEEE-USA E-Books

  • Calculation of gain and noise with dead space for GaAs and Al/sub x/Ga/sub 1-x/As avalanche photodiode

    It is well known that, as a result of the nonlocal nature of impact ionization, the noise of avalanche photodiodes decreases as the thickness of the multiplication region is reduced. In this paper, we present an alternative technique to calculate the gain distribution, including the dead-space effect, by numerical solution of the recursive equations. This method yields the average gain, the multiplication noise, and gain distribution curves. The results are compared with simple Monte Carlo simulation and the Z-transform technique.

  • Hierarchical 2-D DD and HD noise simulations of Si and SiGe devices II. Results

    For pt. I see ibid., vol. 49, pp. 1250-1257 (2002). Terminal current noise is investigated with Langevin-type drift-diffusion (DD) and hydrodynamic (HD) noise models for one-dimensional (1-D) N/sup +/ NN/sup +/ and P/sup +/ PP/sup +/ structures and a realistic two-dimensional (2-D) SiGe NPN HBT. The new noise models, which are suitable for technology computer aided design (TCAD), are validated by comparison with Monte Carlo (MC) device simulations for the 1-D structures including noise due to particle scattering and generation of secondary particles by impact ionization (II). It is shown that the accuracy of the usual approach based on the DD model in conjunction with the Einstein relation degrades under nonequilibrium conditions. 2-D MC noise simulations are found to be feasible only if the current correlation functions decay on a subpicosecond scale, what is not always the case.

  • An electrical design methodology for multi-chip modules

    None

  • Hierarchical 2-D DD and HD noise simulations of Si and SiGe devices. I. Theory

    Langevin-type two-dimensional (2-D) bipolar drift-diffusion (DD) and hydrodynamic (HD) noise models are presented for Si and SiGe devices, which are based on the new concept of modified Langevin forces, which ensure that the DD and HD models exactly reproduce the fluctuations of the full-band Monte Carlo (MC) model under homogeneous bulk conditions. All transport and noise parameters are generated by MC bulk simulations and stored in lookup tables, which must be built only once. As a consequence, the accuracy of the DD and HD models is improved without an increase in CPU time compared to models with analytical expressions for the parameters. Considering the full-band structure, a remarkably strong dependence of noise on crystal orientation is found.

  • An Integrated High Performance Mixed Signal IF-to-Digital Converter

    A single `chip' IF-to-Digital converter sub-system containing Low Noise Amplifiers, AGC, down-conversion mixers, oscillators, baseband amplifiers, references and an A/D converte is presented. Mixed analog-digital circuit design and packaging techniques achieve a high level of integration using standard semiconductor processes. Measured results show that the IC can operate on IF signals between 30MHz-85MHz and decode transmissions up to 64QAM either in NTSC or PAL systems. Key performance factors include 63dB stable gain, 50dB IMD3, 40dB AGC range, 9dB input Noise Figure and 40Msps A/D conversion rate.

  • Characterization of 1/f noise vs. number of gate stripes in MOS transistors

    This paper examines low-frequency 1/f noise (or Bicker noise) in metal oxide semiconductor field-effect transistors (MOSFETs) versus number of gate stripes and bias conditions. Simulations using SPICE/Spectre with Cadence models have displayed the dependence of 1/f noise on the number of gate stripes and the bias conditions. Experimental results from a test chip designed and fabricated in a 0.5 /spl mu/m CMOS process show that 1/f noise is independent of the number of gate stripes in both saturation and linear regions for both P-channel and N-channel devices. The measured results have also shown that 1/f noise is independent of the bias conditions in the saturation region but dependent on the bias conditions in the linear region.

  • 400 MHz-A Challenge for the Hybrid Amplifier

    Throughout its history, the CATV industry has seen an increasing demand for extended system bandwidth. The latest move raises the upper frequency limit to 400 MHz, thus providing space for 52 channels.

  • A novel noise parameters extraction technique for microwave packaged FET

    In this paper, a novel noise parameters extraction technique for microwave packaged FET is proposed. The noise parameters of packaged FET for the entire operating frequency band can be obtained from the four noise parameters measured at a single frequency or a few frequencies. The predicated results obtained with this method agree well with the measured data. As a result, the novel noise parameters extraction technique can be used to predict the noise with a minimum effort.<<ETX>>

  • Detectors for the 10000 Pixel SCUBA-2 Super-conducting Sub-mm Camera for Astronomy

    We describe the current status of the SCUBA-2 sub-mm camera for astronomy.

  • Development of mm-wave solid state devices in China (invited)

    The delevelopment of MM-wave solid state devices in China has a history of nearly 30 years. Now many devices have formed a series of products, including mixer diode, detector diode, Gunn diode, varactor diode, IMPATT diode, PIN diode and solid state niose diode etc., with the frequency covering 18 - 110GHz. Units consisting of mm-wave devices, such as mixer, detector, switch, attenuator, multiplier and noise source, have been widely used for various mm- wave systems. Varieties of novel mm-wave devices-GaAS MESFET, HEMT, HBT, BCT and superconducting devices as well as mm-wave MMIC are also being researched actively.



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