Semiconductor device modeling

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Semiconductor device modeling creates models for the behavior of the electrical devices based on fundamental physics, such as the doping profiles of the devices. (Wikipedia.org)






Conferences related to Semiconductor device modeling

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2021 IEEE Photovoltaic Specialists Conference (PVSC)

Photovoltaic materials, devices, systems and related science and technology


2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe)

Energy conversion and conditioning technologies, power electronics, adjustable speed drives and their applications, power electronics for smarter grid, energy efficiency,technologies for sustainable energy systems, converters and power supplies


2020 57th ACM/ESDA/IEEE Design Automation Conference (DAC)

The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2022 59th ACM/ESDA/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2021 58th ACM/ESDA/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2019 56th ACM/ESDA/IEEE Design Automation Conference (DAC)

    EDA (Electronics Design Automation) is becoming ever more important with the continuous scaling of semiconductor devices and the growing complexities of their use in circuits and systems. Demands for lower-power, higher-reliability and more agile electronic systems raise new challenges to both design and design automation of such systems. For the past five decades, the primary focus of research track at DAC has been to showcase leading-edge research and practice in tools and methodologies for the design of circuits and systems.

  • 2018 55th ACM/ESDA/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2017 54th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2016 53nd ACM/EDAC/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2015 52nd ACM/EDAC/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2014 51st ACM/EDAC/IEEE Design Automation Conference (DAC)

    DAC Description for TMRF The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading

  • 2013 50th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 session on design methodologies and EDA tool developments, keynotes, panels, plus User Track presentations. A diverse worldwide community representing more than 1,000 organization attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2012 49th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The Design Automation Conference (DAC) is the premier event for the design of electronic circuits and systems, and for EDA and silicon solutions. DAC features a wide array of technical presentations plus over 200 of the leading electronics design suppliers

  • 2011 48th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The Design Automation Conference is the world s leading technical conference and tradeshow on electronic design and design automation. DAC is where the IC Design and EDA ecosystem learns, networks, and does business.

  • 2010 47th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The Design Automation Conference (DAC) is the premier event for the design of electronic circuits and systems, and for EDA and silicon solutions. DAC features a wide array of technical presentations plus over 200 of the leading electronics design suppliers.

  • 2009 46th ACM/EDAC/IEEE Design Automation Conference (DAC)

    DAC is the premier event for the electronic design community. DAC offers the industry s most prestigious technical conference in combination with the biggest exhibition, bringing together design, design automation and manufacturing market influencers.

  • 2008 45th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The Design Automation Conference (DAC) is the premier event for the design of electronic circuits and systems, and for EDA and silicon solutions. DAC features a wide array of technical presentations plus over 250 of the leading electronics design suppliers.

  • 2007 44th ACM/IEEE Design Automation Conference (DAC)

    The Design Automation Conference (DAC) is the premier Electronic Design Automation (EDA) and silicon solution event. DAC features over 50 technical sessions covering the latest in design methodologies and EDA tool developments and an Exhibition and Demo Suite area with over 250 of the leading EDA, silicon and IP Providers.

  • 2006 43rd ACM/IEEE Design Automation Conference (DAC)

  • 2005 42nd ACM/IEEE Design Automation Conference (DAC)

  • 2004 41st ACM/IEEE Design Automation Conference (DAC)

  • 2003 40th ACM/IEEE Design Automation Conference (DAC)

  • 2002 39th ACM/IEEE Design Automation Conference (DAC)

  • 2001 38th ACM/IEEE Design Automation Conference (DAC)

  • 2000 37th ACM/IEEE Design Automation Conference (DAC)

  • 1999 36th ACM/IEEE Design Automation Conference (DAC)

  • 1998 35th ACM/IEEE Design Automation Conference (DAC)

  • 1997 34th ACM/IEEE Design Automation Conference (DAC)

  • 1996 33rd ACM/IEEE Design Automation Conference (DAC)


2020 IEEE 16th International Workshop on Advanced Motion Control (AMC)

AMC2020 is the 16th in a series of biennial international workshops on Advanced Motion Control which aims to bring together researchers from both academia and industry and to promote omnipresent motion control technologies and applications.


2020 IEEE 70th Electronic Components and Technology Conference (ECTC)

ECTC is the premier international conference sponsored by the IEEE Components, Packaging and Manufacturing Society. ECTC paper comprise a wide spectrum of topics, including 3D packaging, electronic components, materials, assembly, interconnections, device and system packaging, optoelectronics, reliability, and simulation.


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Periodicals related to Semiconductor device modeling

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Automation Science and Engineering, IEEE Transactions on

The IEEE Transactions on Automation Sciences and Engineering (T-ASE) publishes fundamental papers on Automation, emphasizing scientific results that advance efficiency, quality, productivity, and reliability. T-ASE encourages interdisciplinary approaches from computer science, control systems, electrical engineering, mathematics, mechanical engineering, operations research, and other fields. We welcome results relevant to industries such as agriculture, biotechnology, healthcare, home automation, maintenance, manufacturing, pharmaceuticals, retail, ...


Biomedical Engineering, IEEE Transactions on

Broad coverage of concepts and methods of the physical and engineering sciences applied in biology and medicine, ranging from formalized mathematical theory through experimental science and technological development to practical clinical applications.


Circuits and Systems II: Express Briefs, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.


Computers, IEEE Transactions on

Design and analysis of algorithms, computer systems, and digital networks; methods for specifying, measuring, and modeling the performance of computers and computer systems; design of computer components, such as arithmetic units, data storage devices, and interface devices; design of reliable and testable digital devices and systems; computer networks and distributed computer systems; new computer organizations and architectures; applications of VLSI ...


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Most published Xplore authors for Semiconductor device modeling

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No authors for "Semiconductor device modeling"


Xplore Articles related to Semiconductor device modeling

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Calculation of gain and noise with dead space for GaAs and Al/sub x/Ga/sub 1-x/As avalanche photodiode

IEEE Transactions on Electron Devices, 2002

It is well known that, as a result of the nonlocal nature of impact ionization, the noise of avalanche photodiodes decreases as the thickness of the multiplication region is reduced. In this paper, we present an alternative technique to calculate the gain distribution, including the dead-space effect, by numerical solution of the recursive equations. This method yields the average gain, ...


Yield model for 256K RAMs and beyond

1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1982

An updated yield model based on visual inspection, electrical tests, bit failure maps and failure analysis will be reported. The approach has been verified for the manufacture of 64K memories. It includes yield calculations for partially good product and redundancy and provides yield estimates for 128K and 256K chips.


IEE Colloquium on 'Thermal Management in Power Electronics Systems' (Digest No.065)

IEE Colloquium on Thermal Management in Power Electronics Systems, 1993

None


Hierarchical 2-D DD and HD noise simulations of Si and SiGe devices II. Results

IEEE Transactions on Electron Devices, 2002

For pt. I see ibid., vol. 49, pp. 1250-1257 (2002). Terminal current noise is investigated with Langevin-type drift-diffusion (DD) and hydrodynamic (HD) noise models for one-dimensional (1-D) N/sup +/ NN/sup +/ and P/sup +/ PP/sup +/ structures and a realistic two-dimensional (2-D) SiGe NPN HBT. The new noise models, which are suitable for technology computer aided design (TCAD), are validated ...


IEE Colloquium on 'Measurements and Modelling of Microwave Devices and Circuits' (Digest no.124)

IEE Colloquium on Measurements and Modelling of Microwave Devices and Circuits, 1989

None


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Educational Resources on Semiconductor device modeling

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IEEE-USA E-Books

  • Calculation of gain and noise with dead space for GaAs and Al/sub x/Ga/sub 1-x/As avalanche photodiode

    It is well known that, as a result of the nonlocal nature of impact ionization, the noise of avalanche photodiodes decreases as the thickness of the multiplication region is reduced. In this paper, we present an alternative technique to calculate the gain distribution, including the dead-space effect, by numerical solution of the recursive equations. This method yields the average gain, the multiplication noise, and gain distribution curves. The results are compared with simple Monte Carlo simulation and the Z-transform technique.

  • Yield model for 256K RAMs and beyond

    An updated yield model based on visual inspection, electrical tests, bit failure maps and failure analysis will be reported. The approach has been verified for the manufacture of 64K memories. It includes yield calculations for partially good product and redundancy and provides yield estimates for 128K and 256K chips.

  • IEE Colloquium on 'Thermal Management in Power Electronics Systems' (Digest No.065)

    None

  • Hierarchical 2-D DD and HD noise simulations of Si and SiGe devices II. Results

    For pt. I see ibid., vol. 49, pp. 1250-1257 (2002). Terminal current noise is investigated with Langevin-type drift-diffusion (DD) and hydrodynamic (HD) noise models for one-dimensional (1-D) N/sup +/ NN/sup +/ and P/sup +/ PP/sup +/ structures and a realistic two-dimensional (2-D) SiGe NPN HBT. The new noise models, which are suitable for technology computer aided design (TCAD), are validated by comparison with Monte Carlo (MC) device simulations for the 1-D structures including noise due to particle scattering and generation of secondary particles by impact ionization (II). It is shown that the accuracy of the usual approach based on the DD model in conjunction with the Einstein relation degrades under nonequilibrium conditions. 2-D MC noise simulations are found to be feasible only if the current correlation functions decay on a subpicosecond scale, what is not always the case.

  • IEE Colloquium on 'Measurements and Modelling of Microwave Devices and Circuits' (Digest no.124)

    None

  • Hierarchical 2-D DD and HD noise simulations of Si and SiGe devices. I. Theory

    Langevin-type two-dimensional (2-D) bipolar drift-diffusion (DD) and hydrodynamic (HD) noise models are presented for Si and SiGe devices, which are based on the new concept of modified Langevin forces, which ensure that the DD and HD models exactly reproduce the fluctuations of the full-band Monte Carlo (MC) model under homogeneous bulk conditions. All transport and noise parameters are generated by MC bulk simulations and stored in lookup tables, which must be built only once. As a consequence, the accuracy of the DD and HD models is improved without an increase in CPU time compared to models with analytical expressions for the parameters. Considering the full-band structure, a remarkably strong dependence of noise on crystal orientation is found.

  • A new "mixed-mode" reliability degradation mechanism in advanced Si and SiGe bipolar transistors

    A new mixed-mode base current degradation mechanism is identified in bipolar transistors for the first time, which, at room temperature, induces a large I/sub B/ leakage current only after simultaneous application of both high J/sub C/ and high V/sub CB/. This new mechanism differs fundamentally from well-known I/sub B/ degradation mechanisms such as the reverse EB voltage stress, high forward current stress and damage due to ionizing radiation. Extensive measurements and two-dimensional (2-D) simulations have been used to help understand the device physics associated with this new degradation mechanism.

  • Consistency Of Similarly Designed Wafer Level Reliability test Structures Produced In Multiple Fabrication Areas

    None

  • Evaluation for fab performance using CPO

    Tries to evaluate the investment effect ofthe whole factory by grasping the process cost precisely, classifying its structure, and identifying useless cost factors. As an evaluation index, we defined and used the CPO (Cost of Process Ownership), which is the cost per wafer in each process step based on the configuration of equipment installed in the factory and the configuration of product types manufactured there. This index was developed by making some improvements to the CEO (Cost of Equipment Ownership) model. We will report the definition ofthe CPO we are using and some examples of CPO utilization.

  • FormFactor introduces an integrated process for wafer-level packaging, burn-in test, and module level assembly

    In semiconductor manufacturing, front end scaling (i.e. Moore's Law) continues to hold for the forseeable future. Unfortunately, the back-end processes of package assembly, burn-in and test all require wafer singulation before any of these processes can occur. Singulation immediately forces a linearly increasing cost model, scaling with the number of die/wafer, and prevents a wafer scaling cost model. FormFactor looked at the issues preventing wafer- level back-end processing, and postulated that the highest probability of success would require an approach that integrated the previously separate disciplines of materials, package assembly, burn-in, and test. The connection element to the test and burn-in systems was identified as a primary enabler or inhibitor. In this paper, we briefly describe a wafer-level back-end flow, the chip scale package that this process defines, and the early results observed with this flow and package.



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