Conferences related to Semiconductivity

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2023 Annual International Conference of the IEEE Engineering in Medicine & Biology Conference (EMBC)

The conference program will consist of plenary lectures, symposia, workshops and invitedsessions of the latest significant findings and developments in all the major fields of biomedical engineering.Submitted full papers will be peer reviewed. Accepted high quality papers will be presented in oral and poster sessions,will appear in the Conference Proceedings and will be indexed in PubMed/MEDLINE.


2021 IEEE Photovoltaic Specialists Conference (PVSC)

Photovoltaic materials, devices, systems and related science and technology


2020 57th ACM/ESDA/IEEE Design Automation Conference (DAC)

The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2022 59th ACM/ESDA/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2021 58th ACM/ESDA/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2019 56th ACM/ESDA/IEEE Design Automation Conference (DAC)

    EDA (Electronics Design Automation) is becoming ever more important with the continuous scaling of semiconductor devices and the growing complexities of their use in circuits and systems. Demands for lower-power, higher-reliability and more agile electronic systems raise new challenges to both design and design automation of such systems. For the past five decades, the primary focus of research track at DAC has been to showcase leading-edge research and practice in tools and methodologies for the design of circuits and systems.

  • 2018 55th ACM/ESDA/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2017 54th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2016 53nd ACM/EDAC/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2015 52nd ACM/EDAC/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2014 51st ACM/EDAC/IEEE Design Automation Conference (DAC)

    DAC Description for TMRF The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading

  • 2013 50th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 session on design methodologies and EDA tool developments, keynotes, panels, plus User Track presentations. A diverse worldwide community representing more than 1,000 organization attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2012 49th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The Design Automation Conference (DAC) is the premier event for the design of electronic circuits and systems, and for EDA and silicon solutions. DAC features a wide array of technical presentations plus over 200 of the leading electronics design suppliers

  • 2011 48th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The Design Automation Conference is the world s leading technical conference and tradeshow on electronic design and design automation. DAC is where the IC Design and EDA ecosystem learns, networks, and does business.

  • 2010 47th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The Design Automation Conference (DAC) is the premier event for the design of electronic circuits and systems, and for EDA and silicon solutions. DAC features a wide array of technical presentations plus over 200 of the leading electronics design suppliers.

  • 2009 46th ACM/EDAC/IEEE Design Automation Conference (DAC)

    DAC is the premier event for the electronic design community. DAC offers the industry s most prestigious technical conference in combination with the biggest exhibition, bringing together design, design automation and manufacturing market influencers.

  • 2008 45th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The Design Automation Conference (DAC) is the premier event for the design of electronic circuits and systems, and for EDA and silicon solutions. DAC features a wide array of technical presentations plus over 250 of the leading electronics design suppliers.

  • 2007 44th ACM/IEEE Design Automation Conference (DAC)

    The Design Automation Conference (DAC) is the premier Electronic Design Automation (EDA) and silicon solution event. DAC features over 50 technical sessions covering the latest in design methodologies and EDA tool developments and an Exhibition and Demo Suite area with over 250 of the leading EDA, silicon and IP Providers.

  • 2006 43rd ACM/IEEE Design Automation Conference (DAC)

  • 2005 42nd ACM/IEEE Design Automation Conference (DAC)

  • 2004 41st ACM/IEEE Design Automation Conference (DAC)

  • 2003 40th ACM/IEEE Design Automation Conference (DAC)

  • 2002 39th ACM/IEEE Design Automation Conference (DAC)

  • 2001 38th ACM/IEEE Design Automation Conference (DAC)

  • 2000 37th ACM/IEEE Design Automation Conference (DAC)

  • 1999 36th ACM/IEEE Design Automation Conference (DAC)

  • 1998 35th ACM/IEEE Design Automation Conference (DAC)

  • 1997 34th ACM/IEEE Design Automation Conference (DAC)

  • 1996 33rd ACM/IEEE Design Automation Conference (DAC)


2020 IEEE 70th Electronic Components and Technology Conference (ECTC)

ECTC is the premier international conference sponsored by the IEEE Components, Packaging and Manufacturing Society. ECTC paper comprise a wide spectrum of topics, including 3D packaging, electronic components, materials, assembly, interconnections, device and system packaging, optoelectronics, reliability, and simulation.


2020 IEEE International Conference on Plasma Science (ICOPS)

IEEE International Conference on Plasma Science (ICOPS) is an annual conference coordinated by the Plasma Science and Application Committee (PSAC) of the IEEE Nuclear & Plasma Sciences Society.


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Periodicals related to Semiconductivity

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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Communications, IEEE Transactions on

Telephone, telegraphy, facsimile, and point-to-point television, by electromagnetic propagation, including radio; wire; aerial, underground, coaxial, and submarine cables; waveguides, communication satellites, and lasers; in marine, aeronautical, space and fixed station services; repeaters, radio relaying, signal storage, and regeneration; telecommunication error detection and correction; multiplexing and carrier techniques; communication switching systems; data communications; and communication theory. In addition to the above, ...


Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.


Design & Test of Computers, IEEE

IEEE Design & Test of Computers offers original works describing the methods used to design and test electronic product hardware and supportive software. The magazine focuses on current and near-future practice, and includes tutorials, how-to articles, and real-world case studies. Topics include IC/module design, low-power design, electronic design automation, design/test verification, practical technology, and standards. IEEE Design & Test of ...


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Most published Xplore authors for Semiconductivity

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Xplore Articles related to Semiconductivity

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Nonlinear Optical Effects In Visible-band-gap Semiconductors And Microcrystallites

Digest on Nonlinear Optics: Materials, Phenomena and Devices, 1990

None


Space charge measurements: electrode effects and prebreakdown

[1992] Proceedings of the 4th International Conference on Conduction and Breakdown in Solid Dielectrics, 1992

The authors discuss the measurement of space charge in insulating polymers using a nondestructive method called the thermal step method (TSM). The principles of the TSM are first described. Using this method, the authors study the influence of semiconducting electrodes which assure the electric contact between the insulating polymers and metal electrodes as used in high- voltage cables. Under certain ...


RF performance of high temperature diamond MESFET

Proceedings of 5th International Conference on Properties and Applications of Dielectric Materials, 1997

DC and RF performance of p-type diamond MESFETs (Metal-Semiconductor Field Effect Transistors), is critically evaluated, especially for high temperature application. The investigation utilizes a theoretical large-signal RF model using a harmonic balance technique and the results are compared to experimental measurements. It is shown that the DC and RF performance of diamond MESFET is improved with temperature in an operating ...


Fabrication of Si MOSFET's Using Neutron-Irradiated Silicon as Semi-Insulating Substrate

IEEE Journal of Solid-State Circuits, 1982

The feasibility of a novel silicon-on-semi-insulating substrate structure has been demonstrated. MOS field-effect transistors (MOSFET's) are fabricated on neutron-irradiated silicon wafers which are used as semi-insulating substrates. In order to keep the substrate semi-insulating, laser annealing is used to make the semiconducting layer, and to activate the impurities implanted in the semiconducting layer, and plasma anodization is employed to grow ...


Time-resolved fluorescence in semiconducting single-wall carbon nanotubes

InternationalQuantum Electronics Conference, 2004. (IQEC)., 2004

Time-resolved fluorescence in single-wall carbon nanotubes (SWNTs) has been investigated by optical Kerr gating. A fast non-radiative relaxation process on 10 ps time scale was measured and a radiative lifetime of 110 ns was deduced


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Educational Resources on Semiconductivity

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IEEE.tv Videos

No IEEE.tv Videos are currently tagged "Semiconductivity"

IEEE-USA E-Books

  • Nonlinear Optical Effects In Visible-band-gap Semiconductors And Microcrystallites

    None

  • Space charge measurements: electrode effects and prebreakdown

    The authors discuss the measurement of space charge in insulating polymers using a nondestructive method called the thermal step method (TSM). The principles of the TSM are first described. Using this method, the authors study the influence of semiconducting electrodes which assure the electric contact between the insulating polymers and metal electrodes as used in high- voltage cables. Under certain conditions, they measure the prebreakdown electric field values. The prebreakdown experiment clearly shows that space charge is the main reason for polymer performance degradation. These results show that the migration and space charge installation in XLPE (cross-linked polyethylene) depend on the nature of the electrode.<<ETX>>

  • RF performance of high temperature diamond MESFET

    DC and RF performance of p-type diamond MESFETs (Metal-Semiconductor Field Effect Transistors), is critically evaluated, especially for high temperature application. The investigation utilizes a theoretical large-signal RF model using a harmonic balance technique and the results are compared to experimental measurements. It is shown that the DC and RF performance of diamond MESFET is improved with temperature in an operating temperature range of 300 K to 923 K. The improvement of device performance with temperature can be attributed to a high value of activation energy (0.35 eV) for the ionization of boron. At 773 K, where essentially full activation occurs, the maximum RF output power at an operating frequency of 5 GHz is about 0.63 W/mm, and the maximum power-added efficiency (PAE) is 36% with the linear power gain of 9.4 dB. It is shown that the microwave power application of MESFETs in p-type diamond but otherwise conventional design is limited to high temperature.

  • Fabrication of Si MOSFET's Using Neutron-Irradiated Silicon as Semi-Insulating Substrate

    The feasibility of a novel silicon-on-semi-insulating substrate structure has been demonstrated. MOS field-effect transistors (MOSFET's) are fabricated on neutron-irradiated silicon wafers which are used as semi-insulating substrates. In order to keep the substrate semi-insulating, laser annealing is used to make the semiconducting layer, and to activate the impurities implanted in the semiconducting layer, and plasma anodization is employed to grow the gate oxide. The, mobility of carrier in the channel is about 100 cm/sup 2//V /spl dot/s for p-channel MOSFET's and 300 cm/sup 2//V /spl dot/s for n-channel devices. This structure has inherent advantages such as crystallographicafly single crystalline.

  • Time-resolved fluorescence in semiconducting single-wall carbon nanotubes

    Time-resolved fluorescence in single-wall carbon nanotubes (SWNTs) has been investigated by optical Kerr gating. A fast non-radiative relaxation process on 10 ps time scale was measured and a radiative lifetime of 110 ns was deduced

  • New Control Method of the Propagation Characteristics of Acoustoelectric Domains in CdS

    None

  • Giant Optical Non-Linearity induced by a Single Quantum Dot in a Semiconducting Microcavity

    We show theoretically that a single quantum dot interacting with a micropillar microcavity in the Purcell regime is a highly non-linear medium sensitive to single photons, opening perspectives for integrated photonic quantum computation.

  • Preliminary ionizing radiation tests on n-channel inversion-mode GaInAs MISFET's

    Preliminary results of low-dose rate ionizing radiation (cobalt-60) tests on n-channel inversion-mode GaInAs MISFET's up to a total dose of 5 × 107rad(Si) are presented. The data show that the GaInAs MISFET threshold voltage shifts negatively up to a total dose of 5 × 105rad(Si), with a maximum shift of -0.9 V. The threshold voltage then shifts in a positive direction at higher doses. The mobility factor decreases very slightly and then increases with increasing dose.

  • Ten-fold improvement in the photoluminescence quantum efficiency of quantum-size-effect-tunable (1000-2000 nm) and solution-processed PbS nanocrystal films

    PbS nanocrystals for infrared applications have previously shown to have very low photoluminescence quantum efficiency (/spl sim/ 1%) when solution- processed into the solid state. We show a ten-fold improvement through the use of polymer-nanocrystal composites.

  • Structure mis effects on polarization of HgI2crystals used for γ-ray detection

    The use of the semiconducting Mercuric Iodide as an X and γ - ray detector is limited by the polarization taking place in the material. We present a study of this polarization and two experimental methods to get rid of it (long time interband illumination or positively polarized MIS structure). Finally, we propose an explanation of the phenomenon.



Standards related to Semiconductivity

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