Conferences related to Scanning electron microscopy

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2023 Annual International Conference of the IEEE Engineering in Medicine & Biology Conference (EMBC)

The conference program will consist of plenary lectures, symposia, workshops and invitedsessions of the latest significant findings and developments in all the major fields of biomedical engineering.Submitted full papers will be peer reviewed. Accepted high quality papers will be presented in oral and poster sessions,will appear in the Conference Proceedings and will be indexed in PubMed/MEDLINE.


2021 IEEE Photovoltaic Specialists Conference (PVSC)

Photovoltaic materials, devices, systems and related science and technology


2020 IEEE 70th Electronic Components and Technology Conference (ECTC)

ECTC is the premier international conference sponsored by the IEEE Components, Packaging and Manufacturing Society. ECTC paper comprise a wide spectrum of topics, including 3D packaging, electronic components, materials, assembly, interconnections, device and system packaging, optoelectronics, reliability, and simulation.


2020 IEEE International Magnetic Conference (INTERMAG)

INTERMAG is the premier conference on all aspects of applied magnetism and provides a range of oral and poster presentations, invited talks and symposia, a tutorial session, and exhibits reviewing the latest developments in magnetism.


2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)

Ferroelectric materials and applications


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Periodicals related to Scanning electron microscopy

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Advanced Packaging, IEEE Transactions on

The IEEE Transactions on Advanced Packaging has its focus on the modeling, design, and analysis of advanced electronic, photonic, sensors, and MEMS packaging.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Automatic Control, IEEE Transactions on

The theory, design and application of Control Systems. It shall encompass components, and the integration of these components, as are necessary for the construction of such systems. The word `systems' as used herein shall be interpreted to include physical, biological, organizational and other entities and combinations thereof, which can be represented through a mathematical symbolism. The Field of Interest: shall ...


Biomedical Engineering, IEEE Transactions on

Broad coverage of concepts and methods of the physical and engineering sciences applied in biology and medicine, ranging from formalized mathematical theory through experimental science and technological development to practical clinical applications.


Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.


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Most published Xplore authors for Scanning electron microscopy

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Xplore Articles related to Scanning electron microscopy

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Electron and atomic force microscopy studies of femtosecond laser machining of Si, GaAs and InP

Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Technical Digest (IEEE Cat. No.01CH37170), 2001

Summary form only given. The application of femtosecond light pulses to materials processing has recently become a topic of great interest. Femtosecond laser ablation dynamics has been extensively studied by techniques including time-of-flight and has also been treated theoretically. However, although numerous experimental studies have demonstrated excellent spatial control in femtosecond laser machining, relatively few investigations have explored details of ...


Growth Mechanism of Truncated Triangular GaAs Nanowires

2006 International Conference on Nanoscience and Nanotechnology, 2006

During the growth of GaAs nanowires on the {111}B GaAs substrate, truncated triangular GaAs nanowires were commonly observed in the bottom region of nanowires. Through detailed structural analysis by electron microscopy, the authors have determined the growth mechanism of truncated triangular GaAs nanowires


Electron microscopy analysis of amorphous and crystalline diamond coated silicon field emitters

IVMC '95. Eighth International Vacuum Microelectronics Conference. Technical Digest (Cat. No.TH8012), 1995

The present paper concentrates on the morphology and microstructure of the coatings, as determined from electron microscopy investigations of coated Si emitters. The microscopy techniques used in this study include scanning electron microscopy to examine the macroscopic diamond morphology; high resolution TEM to study both detailed morphology and interface structure; selected area electron diffraction to determine if the film is ...


I-V characterization on diamond deposits by secondary electron microscopy

Eleventh International Vacuum Microelectronics Conference. IVMC'98 (Cat. No.98TH8382), 1998

Diamond based cold cathodes have proven their feasibility for vacuum microelectronics devices. Although there have been numerous attempts to understand the emission mechanism (or mechanisms) these have not yet proved conclusive. In this research in-situ I-V characterization was conducted on a small region of interest on diamond coated surfaces inside a scanning electron microscope. Diamond powder, CVD-diamond, and amorphous diamond ...


Role of annealing time on junction depth for high dose phosphorus implants

1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144), 1998

Twenty-two wafers were implanted with 5/spl times/10/sup 15/ P cm/sup -2/ at 50 keV, one set of 11 with a beam current of 5.0 mA. The remaining 11 with a beam current of 0.5 mA. Wafers of each set were annealed at 800/spl deg/C for 1, 2, 4, 8, 16, 30, 60, 120, and 240 secs. All wafers were evaluated ...


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Educational Resources on Scanning electron microscopy

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IEEE.tv Videos

Nanoscale Magnetism with Picosecond Time Resolution and High Sensitivity - Hendrik Ohldag - IEEE Magnetics Distinguished Lecture
Ultrafast Lasers for Multi-photon Microscopy - Plenary Speaker: Jim Kafka - IPC 2018
AlGaN/GaN Plasmonic Terahertz Detectors
Accelerating Photovoltaics
Real-time Spectrogram Analysis of Continuous Optical Wavefields - José Azaña - Closing Ceremony, IPC 2018
3D Body-Mapping for Severely Burned Patients - Julia Loegering - IEEE EMBS at NIH, 2019
2D Nanodevices - Paul Hurley at INC 2019
Superconducting RF Cavities and Future Particle Accelerators - Applied Superconductivity Conference 2018
IEEE WEBINAR SERIES-March 5th, 2014: GaN Crushing Silicon...and Let Me Tell You How
Unconventional Superconductivity: From History to Mystery
IMS 2014: A 600 GHz Low-Noise Amplifier Module
Transphorm: GaN Champions
A 200um x 200um x 100um, 63nW, 2.4GHz Injectable Fully-Monolithic Wireless BioSensing System: RFIC Industry Showcase 2017
Microstructure-Property Correlations in Superconducting Wires - Applied Superconductivity Conference 2018
IEEE Magnetics Distinguished Lecture - Mitsuteru Inoue
GaN Transistors -- Crushing Silicon in Wireless Energy Transfer
A CMOS Qubit: Quantum & Probabilistic Computing - Mark Sanquer at INC 2019
Electronic Systems for Quantum Computation - David DiVincenzo: 2016 International Conference on Rebooting Computing
The Josephson Effect: Brian Josephson Debates John Bardeen
Future Circular Colliders, CERN, Geneva, Switzerland

IEEE-USA E-Books

  • Electron and atomic force microscopy studies of femtosecond laser machining of Si, GaAs and InP

    Summary form only given. The application of femtosecond light pulses to materials processing has recently become a topic of great interest. Femtosecond laser ablation dynamics has been extensively studied by techniques including time-of-flight and has also been treated theoretically. However, although numerous experimental studies have demonstrated excellent spatial control in femtosecond laser machining, relatively few investigations have explored details of the near-surface changes in crystallographic structure and the localized changes in target composition. In this study we characterize laser-machined semiconductor samples, employing a combination of scanning (SEM) and transmission (TEM) electron microscopies as well as atomic force microscopy (AFM).

  • Growth Mechanism of Truncated Triangular GaAs Nanowires

    During the growth of GaAs nanowires on the {111}B GaAs substrate, truncated triangular GaAs nanowires were commonly observed in the bottom region of nanowires. Through detailed structural analysis by electron microscopy, the authors have determined the growth mechanism of truncated triangular GaAs nanowires

  • Electron microscopy analysis of amorphous and crystalline diamond coated silicon field emitters

    The present paper concentrates on the morphology and microstructure of the coatings, as determined from electron microscopy investigations of coated Si emitters. The microscopy techniques used in this study include scanning electron microscopy to examine the macroscopic diamond morphology; high resolution TEM to study both detailed morphology and interface structure; selected area electron diffraction to determine if the film is crystalline or amorphous and to identify the coating species; and electron energy loss spectroscopy to determine the nature of the carbon bonding-sp/sup 3/, sp/sup 2/, or amorphous-in the film.

  • I-V characterization on diamond deposits by secondary electron microscopy

    Diamond based cold cathodes have proven their feasibility for vacuum microelectronics devices. Although there have been numerous attempts to understand the emission mechanism (or mechanisms) these have not yet proved conclusive. In this research in-situ I-V characterization was conducted on a small region of interest on diamond coated surfaces inside a scanning electron microscope. Diamond powder, CVD-diamond, and amorphous diamond were deposited on to pointed field emitters and flat substrates. In addition, the effects of diamond geometry were compared before and after ion etching on the same sample.

  • Role of annealing time on junction depth for high dose phosphorus implants

    Twenty-two wafers were implanted with 5/spl times/10/sup 15/ P cm/sup -2/ at 50 keV, one set of 11 with a beam current of 5.0 mA. The remaining 11 with a beam current of 0.5 mA. Wafers of each set were annealed at 800/spl deg/C for 1, 2, 4, 8, 16, 30, 60, 120, and 240 secs. All wafers were evaluated by secondary ion mass spectrometry, transmission electron microscopy, sheet resistivity, thermal wave analysis and tapered groove profilometry. Transient enhanced diffusion was completed during the first 4 to 8 seconds. Loop dislocations were detected after 1 second of anneal, suggesting that transient enhanced diffusion was restricted by the absorption of the free interstitials by the growing loop dislocations.

  • HREM studies of ordered superstructure in PMN and PLMN ceramics

    Pure and La-doped lead magnesium niobate have been studied by high resolution electron microscopy combining with computer simulation. There are nanosize superstructural microdomains in the [110] HREM image of Pb(Mg/sub 1/3/Nb/sub 2/3/)O/sub 3/, and the domains grow to an extent of about 40 nm over 150 nm by 10-20% La-doping. Through the computer simulation and processing, the superstructure is confirmed as relating to the ordering on the B-sites, and an explicit description and explanation of the ordered structure and the microdomains form and growth are given.

  • Observation of stress-induced voiding with an ultra-high voltage electron microscope

    An investigation of stress-induced voiding at temperatures 400 to 500 degrees C in passivated Al metallizations (0.5 by 1 mu m wide) with a bamboo grain structure by ultra-high voltage (2 MV) electron microscopy is discussed. Emphasis is placed on the study of nucleation and growth of voids. Conventional and in situ observations of initial stages of voiding indicate that voids start not only at grain boundaries (GBs), but also at passivation/Al interfaces with no GBs. Void growth toward the Al metallization with direction, however, is always associated with GBs. From the observed results it is suggested that dislocation glide as well as GBs may play a role in voiding at the temperature range studied.<<ETX>>

  • Study by electron microscopy investigations (TEM, SEM, ED, HVEM) of treeing (from pre-breakdown to breakdown) induced by accelerated methods

    In this paper we have studied the evolution of treeing (from pre-breakdown to breakdown) induced by accelerated methods-like electron or laser beam irradiation-in polyethylene. The growth of treeing is very closely related to the structural changes of polyethylene observed by different electron microscopy investigations-like transmission electron microscopy, high voltage electron microscopy, scanning electron microscopy etc.-and thus we consider that it can be used as an ageing indicator. The increased role of polymers in the field of high technologies requires the structural study of dielectric. The polyethylene (linear thermoplastic polymer) is used like cable isolation in the nuclear power plants. The polyethylene has very good dielectric properties and good stability of its properties in usual conditions. Pre- breakdown, treeing discharge and breakdown phenomena in polyethylene are particularly sensitive to the conditions of samples such as specimen defects (especially at the surface), nature of beam, ambient medium, temperature, time and the mode in which the phenomenon occurs. The authors would also suggest that more attention should be given to the study of influence of the surface defects, impurities, specimen geometry, temperature and especially the transformations of the structure in the presence of breakdown phenomenon.

  • Cmos/sos Ri-1750ab Processor

    None

  • Simulations Of Fabricated Field Emitter Structures

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