Conferences related to Quantum well lasers

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2023 Annual International Conference of the IEEE Engineering in Medicine & Biology Conference (EMBC)

The conference program will consist of plenary lectures, symposia, workshops and invitedsessions of the latest significant findings and developments in all the major fields of biomedical engineering.Submitted full papers will be peer reviewed. Accepted high quality papers will be presented in oral and poster sessions,will appear in the Conference Proceedings and will be indexed in PubMed/MEDLINE.


2021 IEEE Photovoltaic Specialists Conference (PVSC)

Photovoltaic materials, devices, systems and related science and technology


2020 IEEE International Semiconductor Laser Conference (ISLC)

The ISLC is dedicated to the latest developments in semiconductor lasers, amplifiers and LEDs, including: Semiconductor Optical Amplifiers, Silicon compatible lasers, VCSELs, Photonic band-gap and microcavity lasers, Grating controlled lasers, Multi-segment and ring lasers, Quantum cascade and interband, Sub-wavelength scale nanolasers, Mid IR and THz sources, InP, GaAs and Sb materials, Quantum dot lasers, High power and high-brightness lasers, GaN and ZnSe based UV to visible LEDs, Communications lasers, Semiconductor integrated optoelectronics.

  • 2018 IEEE International Semiconductor Laser Conference (ISLC)

    The International Semiconductor Laser Conference has a long tradition as the leadinginternational conference where researchers and engineers from all over the world meet to shareand discuss the latest developments in semiconductor lasers, amplifiers and LEDs. The 25thInternational Semiconductor Laser Conference will be held in Kobe Japan from 12- 15September 2016. The conference will include both oral and poster sessions of contributed andinvited papers, as well as a plenary session comprising reviews on a number of important andtimely topics. A rump session will feature special topics of current interest for discussion in amore relaxed and open atmosphere. In addition, attendees will be able to participate inworkshops on current hot topics during the first day of the conference. Technical results on allaspects of semiconductor lasers, amplifiers, LEDs and integrated devices, from basic physics ofnew materials and structures to new and improved device concepts are covered.

  • 2016 International Semiconductor Laser Conference (ISLC)

    The International Semiconductor Laser Conference has a long tradition as the leading international conference where researchers and engineers from all over the world meet to share and discuss the latest developments in semiconductor lasers, amplifiers and LEDs. The 25th International Semiconductor Laser Conference will be held in Kobe Japan from 12- 15 September 2016. The conference will include both oral and poster sessions of contributed and invited papers, as well as a plenary session comprising reviews on a number of important and timely topics. A rump session will feature special topics of current interest for discussion in a more relaxed and open atmosphere. In addition, attendees will be able to participate in workshops on current hot topics during the first day of the conference. Technical results on all aspects of semiconductor lasers, amplifiers, LEDs and integrated devices, from basic physics of new materials and structures to new and improved device concepts are covered.

  • 2014 International Semiconductor Laser Conference (ISLC)

    The IEEE International Semiconductor Laser Conference (ISLC) has a long tradition as the leading international conference where researchers and engineers from all over the world meet to share and discuss the latest developments in semiconductor lasers, amplifiers and LEDs. The 24th IEEE International Semiconductor Laser Conference will be held at the Melia Palas Atenea Hotel on the seafront in Palma on the beautiful island of Mallorca in the Mediterranean from 7 - 10 September 2014. The conference will include both oral and poster sessions of contributed and invited papers, as well as a plenary session comprising reviews on a number of important and timely topics. A rump session will feature special topics of current interest for discussion in a more relaxed and open atmosphere. In addition, attendees will be able to participate in workshops on current hot topics during the first day of the conference. Technical results on all aspects of semiconductor lasers, amplifiers, LEDs and integ

  • 2012 IEEE 23rd International Semiconductor Laser Conference (ISLC)

    The IEEE International Semiconductor Laser Conference (ISLC) has a long tradition as the leading international conference where researchers and engineers from all over the world meet to share and discuss the most recent developments in semiconductor lasers, amplifiers and LEDs. The 23rd IEEE International Semiconductor Laser Conference will be held at the San Diego Mission Valley Marriott, San Diego, California from 7-10 October 2012.

  • 2010 IEEE 22nd International Semiconductor Laser Conference (ISLC)

    The 22 nd IEEE International Semiconductor Laser Conference will be held at Ana Hotel Kyoto in Kyoto, Japan on 26-30 September, 2010. This biannual meeting has a long tradition of being the primary forum for the dissemination of the most recent scientific and technical achievements in the field of semiconductor lasers and related technologies. The conference will include oral and poster sessions of contributed papers, an invited session comprising reviews in a number of topics of current importance, and a r

  • 2008 IEEE 21st International Semiconductor Laser Conference (ISLC)

  • 2006 IEEE 20th International Semiconductor Laser Conference (ISLC)

  • 2004 IEEE 19th International Semiconductor Laser Conference (ISLC)

  • 2002 IEEE 18th International Semiconductor Laser Conference (ISLC)

  • 2000 IEEE 17th International Semiconductor Laser Conference (ISLC)

  • 1996 IEEE 15th International Semiconductor Laser Conference (ISLC)


2019 IEEE 8th International Conference on Advanced Optoelectronics and Lasers (CAOL)

CAOL*2019 will provide a forum for scientists in a wide area of laser physics, optoelectronics, optics and photonics. The conference will cover wide frontiers in laser physics, photonics, nanotechnology, material physics, nonlinear optics and optical communications. Its characteristic feature is a stronger emphasis on the mathematical, physical and technological aspects of the problems in hand, together with detailed analysis of application problems. This year in the frame of CAOL we will organize two accompanying events, the Workshop on Data Science in Modern Optoelectronics and Laser Engineering and the Workshop “Measurement Uncertainty: Scientific, Standard, Applied and Methodical Aspects” (UM*2019). DSMOLE*2019 will be dedicated to problems arising from merging of modern optoelectronics and laser engineering with data science, artificial and computational intelligence. UM*2019 will cover cutting edge developments in metrology and adjacent fields.

  • 2016 IEEE 7th International Conference on Advanced Optoelectronics and Lasers (CAOL)

    The conference will cover wide frontiers in laser physics, nanotechnology, new materials, nonlinear optics and optical communications. Its characteristic feature is a stronger emphasis on the mathematical, physical and technological aspects of the researches, together with a detail analysis of the application problems. The technical program traditionally consists of invited lectures and regular contributed papers. The technical program traditionally consists of invited lectures and regular contributed papers (oral and poster sessions). The previous conferences were successfully held in since 1999 in different cities of Ukraine and Mexico. Information on the previous international meetings on optoelectronics and lasers can be found in IEEE Photonics Society Newsletter (formerly IEEE/LEOS Newsletters): 4-1999, 4-2000, 4-2001, 3- 2004 2-2006, 2-2009, 4-2010, 4-2011 etc.

  • 2013 International Conference on Advanced Optoelectronics and Lasers (CAOL)

    CAOL*2013 will provide a forum for scientists in a wide area of laser physics and optoelectronics. The conference will cover wide frontiers in laser physics, nanotechnology, new materials, nonlinear optics and optical communications. Its characteristic feature is a stronger emphasis on the mathematical, physical and technological aspects of the researches, together with a detail analysis of the application problems. The technical program traditionally consists of invited lectures and regular contributed papers. The previous conferences were successfully held in 2003, 2005, 2008 and 2010 in Crimea, and in 2006 in Guanajuato, Mexico. Information on the previous international meetings on optoelectronics and lasers can be found in IEEE Photonics Society Newsletter (formerly IEEE/LEOS Newsletters): 4-1999, 4-2000, 4-2001, 3-2004 2-2006, 2-2009, 4-2010, 4-2011 etc.

  • 2010 International Conference on Advanced Optoelectronics and Lasers (CAOL)

    The conference cover wide frontiers in laser physics, nanotechnology, new materials, nonlinear optics and optical communications. Its characteristic feature is a stronger emphasis on the mathematical, physical and technological aspects of the researches, together with analysis of the application problems. The technical program consists of invited and regular contributed papers.

  • 2008 International Conference on Advanced Optoelectronics and Lasers (CAOL)

    The 4-nd International Conference on Advanced Optoelectronics and Lasers (CAOL'2008) will be held in Alushta, Crimea, Ukraine, from September 29 to October 4, 2008. CAOL'2008 will provide a forum for experts in a wide area of laser physics and optoelectronics. The previous conferences were successfully provided in 2003 and 2005 in Crimea, and in 2006 in Guanajuato, Mexico.

  • 2005 International Conference on Advanced Optoelectronics and Lasers (CAOL)

  • 2003 International Conference on Advanced Optoelectronics and Lasers (CAOL)


2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)

CLEO®/Europe will showcase the latest developments in a wide range of laser and photonics areas including laser source development, materials, ultrafast science, fibre optics, nonlinear optics, terahertz sources, high-field physics, optical telecommunications, nanophotonics, biophotonics.EQEC will feature the fundamentals of quantum optics, quantum information, atom optics, ultrafast optics, nonlinear phenomena and self-organization, plasmonics and metamaterials, fundamental nanooptics, theoretical and computational photonics.


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Periodicals related to Quantum well lasers

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Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Latin America Transactions, IEEE (Revista IEEE America Latina)

The IEEE Region 9 is releasing the IEEE Latin America Transactions to enable the publication of non-published and technically excellent papers from Latin American engineers, in Spanish or Portuguese languages. Engineers and researchers from Portugal and Spain (and others countries with the same language) are also very welcome to submit their proposals.


Lightwave Technology, Journal of

All aspects of optical guided-wave science, technology, and engineering in the areas of fiber and cable technologies; active and passive guided-wave componentry (light sources, detectors, repeaters, switches, fiber sensors, etc.); integrated optics and optoelectronics; systems and subsystems; new applications; and unique field trials.


Magnetics, IEEE Transactions on

Science and technology related to the basic physics and engineering of magnetism, magnetic materials, applied magnetics, magnetic devices, and magnetic data storage. The Transactions publishes scholarly articles of archival value as well as tutorial expositions and critical reviews of classical subjects and topics of current interest.


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Most published Xplore authors for Quantum well lasers

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Xplore Articles related to Quantum well lasers

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Blue and Blue/Green Laser Diodes and LED-based Display Devices

50th Annual Device Research Conference, 1992

None


Physics And Engineering Of Blue And Green ZnSe-based Diode Lasers

LEOS '92 Conference Proceedings, 1992

None


Optical Properties Of Strained-layer Inas/gaas Quantum Wells In Hetero N-i-p-i Structures

Digest on Nonlinear Optics: Materials, Phenomena and Devices, 1990

None


Growth Of InP Based Strain Compensated Multiple Quantum Wells By OMCVD

Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics, 1994

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Sub-mA threshold operation of lambda =1.5 mu m strained InGaAs multiple quantum well lasers grown on

LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels, 1992

1.5- mu m wavelength In/sub x/Ga/sub 1-x/As/InGaAsP (x=0.7, resulting in 1.2% compressive strain and x=0.53, resulting in zero strain) multiple quantum well (MQW) structures were grown on


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Educational Resources on Quantum well lasers

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IEEE.tv Videos

Breaking Spectral and Performance Barriers for Diode Lasers - Plenary Speaker, Manijeh Razeghi - IPC 2018
Quantum Communication for Tomorrow - W.J. Munro Plenary from 2016 IEEE Photonics Conference
Yasuhiko Arakawa, Pallab Bhattacharya, Dieter H. Bimberg - IEEE Jun-Ichi Nishizawa Medal, 2019 IEEE Honors Ceremony
Superconducting quantum computing research and applications in the United States - Applied Superconductivity Conference 2018
Shaping the Future of Quantum Computing - Suhare Nur - ICRC San Mateo, 2019
Electronic Systems for Quantum Computation - David DiVincenzo: 2016 International Conference on Rebooting Computing
IEEE Edison Medal - Eli Yablonovich - 2018 IEEE Honors Ceremony
Semiconductor Laser Development at Hisense Photonics - Yanfeng Lao - IPC 2018
Coherent Photonic Architectures: The Missing Link? - Hideo Mabuchi: 2016 International Conference on Rebooting Computing
Quantum Computing Panel - The Road Ahead - ICRC San Mateo, 2019
Nanotechnology For Electrical Engineers
From the Quantum Moore's Law toward Silicon Based Universal Quantum Computing - IEEE Rebooting Computing 2017
Q&A with Bruce Kraemer: IEEE Rebooting Computing Podcast, Episode 24
The Josephson Effect: The Josephson Volt
Probabilistic AI: Quantum & Probabilistic Computing - Jean Simatic at INC 2019
Q&A with Margaret Martonosi: IEEE Rebooting Computing Podcast, Episode 14
Hertz-Class Brillouin Lasing with Nanokelvin Thermal Sensing - William Loh - Closing Ceremony, IPC 2018
ASC-2014 SQUIDs 50th Anniversary: 3 of 6 - Bob Fagaly
An IEEE IPC Special Session with Alexander Spott of The Optoelectronics Research Group
Q&A with Travis Humble: IEEE Rebooting Computing Podcast, Episode 27

IEEE-USA E-Books

  • Blue and Blue/Green Laser Diodes and LED-based Display Devices

    None

  • Physics And Engineering Of Blue And Green ZnSe-based Diode Lasers

    None

  • Optical Properties Of Strained-layer Inas/gaas Quantum Wells In Hetero N-i-p-i Structures

    None

  • Growth Of InP Based Strain Compensated Multiple Quantum Wells By OMCVD

    None

  • Sub-mA threshold operation of lambda =1.5 mu m strained InGaAs multiple quantum well lasers grown on

    1.5- mu m wavelength In/sub x/Ga/sub 1-x/As/InGaAsP (x=0.7, resulting in 1.2% compressive strain and x=0.53, resulting in zero strain) multiple quantum well (MQW) structures were grown on

  • Effects of doping in the active region of 630-nm band GaInP-AlGaInP tensile-strained quantum-well lasers

    We theoretically analyze 630-nm band GaInP-AlGaInP tensile-strained quantum- well (QW) lasers with doping in the active region. The radiative current can be significantly reduced by introducing n-type doping in the active region. However, this advantage is reduced by the increase of the leakage current. As a result, the threshold current is reduced and the emission wavelength is shortened for multiquantum-well (MQW) lasers by n-type doping. But for single- quantum-well (SQW) lasers, because of the large increase of the leakage current, the threshold current increases with n-type doping.

  • Narrow linewidth and wavelength tunable distributed feedback lasers

    Results obtained for an experimental three-section multiple-quantum-well distributed-feedback (DFB) laser with a long cavity and a lambda /4 phase- shifted grating are reviewed. To narrow the linewidth, a 1.2-mm-long cavity, Bragg wavelength detuning of -20 nm from gain peak, and a quantum-well active layer were used. Wavelength tuning was achieved by controlling spatial hole burning using three electrodes with nonuniform current injection. The maximum wavelength tuning range was 1.6 nm, the minimum linewidth was 350 kHz, and FM response was flat from 100 kHz to 10 GHz, making the laser suitable for use in coherent optical fiber transmission systems.<<ETX>>

  • 1.3-μm AlGaInAs-InP buried-heterostructure lasers with mode profile converter

    AlGaInAs buried-heterostructure (BH) lasers with a mode profile converter (MPC) have been successfully fabricated for the first time. The thickness of the multiple-quantum-well (MQW) waveguide was vertically tapered by selective area growth (SAG). The threshold current I/sub th/ was 14.6 mA with a 600-μm- long cavity and a high-reflective-coated rear facet. The full-width at half- maximum of the far-field pattern in the perpendicular and horizontal directions were 9.2/spl deg/ and 12.6/spl deg/, respectively. The optical coupling loss between lasers with MPC and a single-mode fiber was 3.0 dB when the distance between the laser and fiber was 20 μm.

  • Theoretical and experimental analysis of leakage current in InGaAsP BH lasers with p-n-p-n current blocking layers

    The dependence of the leakage current in 1.3-/spl mu/m InGaAsP buried heterostructure (BH) lasers with p-n-p-n current blocking layers on well number, mesa width, and carrier density has been analyzed using a two- dimensional device simulator and compared with the electroluminescence (EL) emitted from InP layers. The analysis of the minority carrier flow reveals that the electron current flowing through the p-n-p-n current blocking layers is the dominant component of the leakage current. The measured EL intensity has two peaks at both sides of the n-blocking layer apart from the active layer. The EL intensity decreases with increasing well number and carrier density of the p-blocking layer, and increases with increasing mesa width. These results are consistent with the simulations.

  • Experimental and theoretical analysis of the carrier distribution in asymmetric multiple quantum-well InGaAsP lasers

    The authors present an experimental and theoretical analysis of the carrier distribution in multiple quantum-well (MQW) lasers and the effect of this carrier distribution on the gain of wells at different locations in the active region. An experimental technique using mirror image asymmetric multiple quantum-well (AMQW) lasers is described which provides quantitative information on the degree to which the carrier distribution affects the gain of quantum wells (QWs) in the active region. A gain model for AMQW lasers is developed and used to explain some important characteristics of AMQW devices. A rate equation model is presented which incorporates the effects of fields across the p-i-n junction active region. The model is able to predict experimental results measured from thirteen AMQW laser structures to within experimental uncertainty.



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