Conferences related to Quantum dot lasers

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2020 IEEE International Semiconductor Laser Conference (ISLC)

The ISLC is dedicated to the latest developments in semiconductor lasers, amplifiers and LEDs, including: Semiconductor Optical Amplifiers, Silicon compatible lasers, VCSELs, Photonic band-gap and microcavity lasers, Grating controlled lasers, Multi-segment and ring lasers, Quantum cascade and interband, Sub-wavelength scale nanolasers, Mid IR and THz sources, InP, GaAs and Sb materials, Quantum dot lasers, High power and high-brightness lasers, GaN and ZnSe based UV to visible LEDs, Communications lasers, Semiconductor integrated optoelectronics.

  • 2018 IEEE International Semiconductor Laser Conference (ISLC)

    The International Semiconductor Laser Conference has a long tradition as the leadinginternational conference where researchers and engineers from all over the world meet to shareand discuss the latest developments in semiconductor lasers, amplifiers and LEDs. The 25thInternational Semiconductor Laser Conference will be held in Kobe Japan from 12- 15September 2016. The conference will include both oral and poster sessions of contributed andinvited papers, as well as a plenary session comprising reviews on a number of important andtimely topics. A rump session will feature special topics of current interest for discussion in amore relaxed and open atmosphere. In addition, attendees will be able to participate inworkshops on current hot topics during the first day of the conference. Technical results on allaspects of semiconductor lasers, amplifiers, LEDs and integrated devices, from basic physics ofnew materials and structures to new and improved device concepts are covered.

  • 2016 International Semiconductor Laser Conference (ISLC)

    The International Semiconductor Laser Conference has a long tradition as the leading international conference where researchers and engineers from all over the world meet to share and discuss the latest developments in semiconductor lasers, amplifiers and LEDs. The 25th International Semiconductor Laser Conference will be held in Kobe Japan from 12- 15 September 2016. The conference will include both oral and poster sessions of contributed and invited papers, as well as a plenary session comprising reviews on a number of important and timely topics. A rump session will feature special topics of current interest for discussion in a more relaxed and open atmosphere. In addition, attendees will be able to participate in workshops on current hot topics during the first day of the conference. Technical results on all aspects of semiconductor lasers, amplifiers, LEDs and integrated devices, from basic physics of new materials and structures to new and improved device concepts are covered.

  • 2014 International Semiconductor Laser Conference (ISLC)

    The IEEE International Semiconductor Laser Conference (ISLC) has a long tradition as the leading international conference where researchers and engineers from all over the world meet to share and discuss the latest developments in semiconductor lasers, amplifiers and LEDs. The 24th IEEE International Semiconductor Laser Conference will be held at the Melia Palas Atenea Hotel on the seafront in Palma on the beautiful island of Mallorca in the Mediterranean from 7 - 10 September 2014. The conference will include both oral and poster sessions of contributed and invited papers, as well as a plenary session comprising reviews on a number of important and timely topics. A rump session will feature special topics of current interest for discussion in a more relaxed and open atmosphere. In addition, attendees will be able to participate in workshops on current hot topics during the first day of the conference. Technical results on all aspects of semiconductor lasers, amplifiers, LEDs and integ

  • 2012 IEEE 23rd International Semiconductor Laser Conference (ISLC)

    The IEEE International Semiconductor Laser Conference (ISLC) has a long tradition as the leading international conference where researchers and engineers from all over the world meet to share and discuss the most recent developments in semiconductor lasers, amplifiers and LEDs. The 23rd IEEE International Semiconductor Laser Conference will be held at the San Diego Mission Valley Marriott, San Diego, California from 7-10 October 2012.

  • 2010 IEEE 22nd International Semiconductor Laser Conference (ISLC)

    The 22 nd IEEE International Semiconductor Laser Conference will be held at Ana Hotel Kyoto in Kyoto, Japan on 26-30 September, 2010. This biannual meeting has a long tradition of being the primary forum for the dissemination of the most recent scientific and technical achievements in the field of semiconductor lasers and related technologies. The conference will include oral and poster sessions of contributed papers, an invited session comprising reviews in a number of topics of current importance, and a r

  • 2008 IEEE 21st International Semiconductor Laser Conference (ISLC)

  • 2006 IEEE 20th International Semiconductor Laser Conference (ISLC)

  • 2004 IEEE 19th International Semiconductor Laser Conference (ISLC)

  • 2002 IEEE 18th International Semiconductor Laser Conference (ISLC)

  • 2000 IEEE 17th International Semiconductor Laser Conference (ISLC)

  • 1996 IEEE 15th International Semiconductor Laser Conference (ISLC)


2020 Optical Fiber Communications Conference and Exhibition (OFC)

The Optical Fiber Communication Conference and Exhibition (OFC) is the largest global conference and exhibition for optical communications and networking professionals. For over 40 years, OFC has drawn attendees from all corners of the globe to meet and greet, teach and learn, make connections and move business forward.OFC attracts the biggest names in the field, offers key networking and partnering opportunities, and provides insights and inspiration on the major trends and technology advances affecting the industry. From technical presentations to the latest market trends and predictions, OFC is a one-stop-shop.


2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)

CLEO®/Europe will showcase the latest developments in a wide range of laser and photonics areas including laser source development, materials, ultrafast science, fibre optics, nonlinear optics, terahertz sources, high-field physics, optical telecommunications, nanophotonics, biophotonics.EQEC will feature the fundamentals of quantum optics, quantum information, atom optics, ultrafast optics, nonlinear phenomena and self-organization, plasmonics and metamaterials, fundamental nanooptics, theoretical and computational photonics.


2019 IEEE Photonics Conference (IPC)

The IEEE Photonics Conference, previously known as the IEEE LEOS Annual Meeting, offers technical presentations by the world’s leading scientists and engineers in the areas of lasers, optoelectronics, optical fiber networks, and associated lightwave technologies and applications. It also features compelling plenary talks on the industry’s most important issues, weekend events aimed at students and young photonics professionals, and a manufacturer’s exhibition.


2019 IEEE Photonics Society Summer Topical Meeting Series (SUM)

The Topical Meetings of the IEEE Photonics Society are the premier conference series for exciting, new areas in photonic science, technology, and applications; creating the opportunity to learn about emerging fields and to interact with the research and technology leaders in an intimate environment.


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Periodicals related to Quantum dot lasers

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Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Lightwave Technology, Journal of

All aspects of optical guided-wave science, technology, and engineering in the areas of fiber and cable technologies; active and passive guided-wave componentry (light sources, detectors, repeaters, switches, fiber sensors, etc.); integrated optics and optoelectronics; systems and subsystems; new applications; and unique field trials.


Magnetics, IEEE Transactions on

Science and technology related to the basic physics and engineering of magnetism, magnetic materials, applied magnetics, magnetic devices, and magnetic data storage. The Transactions publishes scholarly articles of archival value as well as tutorial expositions and critical reviews of classical subjects and topics of current interest.


Nanotechnology, IEEE Transactions on

The proposed IEEE Transactions on Nanotechnology will be devoted to the publication of manuscripts of archival value in the general area of nanotechnology, that is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.


Photonics Technology Letters, IEEE

Rapid publication of original research relevant to photonics technology. This expanding field emphasizes laser and electro-optic technology, laser physics and systems, applications, and photonic/ lightwave components and applications. The journal offers short, archival publication with minimal delay.


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Most published Xplore authors for Quantum dot lasers

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Xplore Articles related to Quantum dot lasers

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Corrections To "Noise Of The Stretched Pulse Fiber Laser: Part I~theory"

IEEE Journal of Quantum Electronics, 1997

None


Errata

Electronics Letters, 2008

None


Thermal resistance of InAs/InP quantum dot laser

IEEE Journal of Selected Topics in Quantum Electronics, None

NOTICE TO THE READER It is recommended and agreed upon by the authors and the Editor-in-Chief of the IEEE Journal of Selected Topics in Quantum Electronics that the following article: “Thermal Resistance of InAs/InP Quantum Dot Laser,” by S. G. Li, Q. Gong, C. F. Cao, X. Z. Wang, J. Y. Yan, Y. Wang and H. L. Wang, DOI: 10.1109/JSTQE.2014.2302355 ...


Ultrafast processes in InAs/GaAs quantum dot based electro-absorbers

2009 11th International Conference on Transparent Optical Networks, 2009

In this study we perform a detailed investigation of the ultrafast processes which govern the intradot recovery dynamics of a QD InAs/GaAs structure under reverse bias condition by means of the single and two colour pump-probe technique. By studying the GS and ES recoveries as a function of reverse bias voltage and fitting the experimental results with a simple rate ...


Single mode performance of a single mode injection locked quantum dot laser

(CLEO). Conference on Lasers and Electro-Optics, 2005., 2005

An injection locked QD laser is demonstrated to provide single longitudinal mode operation with a 40 dB SMSR and an improvement in RIN peak from 1.3-2.3 GHz. Alpha factor is measured to be 0.8.


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Educational Resources on Quantum dot lasers

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IEEE.tv Videos

Yasuhiko Arakawa, Pallab Bhattacharya, Dieter H. Bimberg - IEEE Jun-Ichi Nishizawa Medal, 2019 IEEE Honors Ceremony
Electric-field Bit Write-in for Molecular Quantum-dot Cellular Automata - Enrique Blair - ICRC 2018
Nanotechnology For Electrical Engineers
Breaking Spectral and Performance Barriers for Diode Lasers - Plenary Speaker, Manijeh Razeghi - IPC 2018
Quantum Communication for Tomorrow - W.J. Munro Plenary from 2016 IEEE Photonics Conference
"Reversible/Adiabatic Classical Computation An Overview" (Rebooting Computing)
Honors 2020: Paul Daniel Dapkus Wins the Jun-ichi Nishizawa Medal
Quantum Computing & IBM Quantum Experience: An Introduction
Accelerating Discrete Fourier Transforms with Dot-product engine - Miao Hu: 2016 International Conference on Rebooting Computing
From the Quantum Moore's Law toward Silicon Based Universal Quantum Computing - IEEE Rebooting Computing 2017
Hertz-Class Brillouin Lasing with Nanokelvin Thermal Sensing - William Loh - Closing Ceremony, IPC 2018
An IEEE IPC Special Session with Alexander Spott of The Optoelectronics Research Group
Quantum Computing and IBM Quantum Experience: An Introduction
Q&A with Travis Humble: IEEE Rebooting Computing Podcast, Episode 27
Electrically-Pumped 1.31 μm MQW Lasers by Direct Epitaxy on Wafer-Bonded InP-on-SOI Substrate - Yingtao Hu - Closing Ceremony, IPC 2018
Quantum Technologies in Europe: The Quantum Flagship Initiative - Applied Superconductivity Conference 2018
Quantum Accelerators for High-Performance Computing Systems - IEEE Rebooting Computing 2017
Physical Restraints on Quantum Circuits - IEEE Rebooting Computing 2017
Part 2: Workshop on Benchmarking Quantum Computational Devices and Systems - ICRC 2018
Challenges and Opportunities of the NISQ Processors (Noisy Intermediate Scale Quantum Computing) - 2018 IEEE Industry Summit on the Future of Computing

IEEE-USA E-Books

  • Corrections To "Noise Of The Stretched Pulse Fiber Laser: Part I~theory"

    None

  • Errata

    None

  • Thermal resistance of InAs/InP quantum dot laser

    NOTICE TO THE READER It is recommended and agreed upon by the authors and the Editor-in-Chief of the IEEE Journal of Selected Topics in Quantum Electronics that the following article: “Thermal Resistance of InAs/InP Quantum Dot Laser,” by S. G. Li, Q. Gong, C. F. Cao, X. Z. Wang, J. Y. Yan, Y. Wang and H. L. Wang, DOI: 10.1109/JSTQE.2014.2302355 is withdrawn and should not be considered for citation use. Editor-in-Chief, IEEE Journal of Selected Topics in Quantum Electronics

  • Ultrafast processes in InAs/GaAs quantum dot based electro-absorbers

    In this study we perform a detailed investigation of the ultrafast processes which govern the intradot recovery dynamics of a QD InAs/GaAs structure under reverse bias condition by means of the single and two colour pump-probe technique. By studying the GS and ES recoveries as a function of reverse bias voltage and fitting the experimental results with a simple rate equation model for the intradot carrier dynamics we have illustrated the dominance of Auger mediated recovery when the ES is initially populated while phonon mediated recovery dominates for the GS case. This provides opportunities for the design of the next generation of electro-absorbing devices based on QD materials.

  • Single mode performance of a single mode injection locked quantum dot laser

    An injection locked QD laser is demonstrated to provide single longitudinal mode operation with a 40 dB SMSR and an improvement in RIN peak from 1.3-2.3 GHz. Alpha factor is measured to be 0.8.

  • Third-order photon correlations from a quantum dot coupled to a photonic-crystal nanocavity

    We measure the third-order autocorrelation function of a photon stream from a single quantum dot coupled to a photonic-crystal nanocavity. This is the first measurement of the higher-order photon correlation function on a solid state quantum emitter.

  • 2D and 3D photonic crystal nanocavity lasers with quantum dot gain

    We discuss our recent results on 2D and 3D photonic crystal (PhC) nanocavity lasers. By utilizing high quality InAs quantum dots (QDs), we demonstrated various types of 2D PhC nanocavity lasers including a single dot laser. The micromanipulation technique boosts the quality factor of 3D PhC nanocavity, which facilitated the first demonstration of lasing oscillation in 3D PhC nanocavity. A silicon-based 3D PhC nanocavity laser with QD gain is also discussed.

  • Self-Consistent Optimization of Multi-Quantum Well Structures by a Genetic Algorithm

    This work presents a self-consistent optimization of multi-quantum well based nanostructured semiconductors. A Genetic Algorithm is used for the search module. The simulation module is based on the self-consistent solution of the coupled Poisson and Schrödinger equations by using the finite-element method. The results of two case tests are presented and discussed.

  • Quantum dot laser diodes: physics, progress and potential

    Summary from only given. This tutorial is intended for those with a background in the area of diode lasers but with no specialist knowledge of quantum dot structures and lasers. The aim is to summarise the basic principles of quantum dot lasers and the current status of their development, and to assess their future potential.

  • Influence of carrier statistics on InGaN/GaN device performance

    We investigated carrier statistics of highly efficient InGaN/GaN devices based on quantum dots. We demonstrate that delocalized carriers in both InGaN residual quantum well and GaN matrix are responsible for significant nonradiative recombination. In case of weak carrier localization in the quantum dots Boltzmann carrier distribution in the localized states is present. In case of high value of localization energy strong deviation from Boltzmann carrier statistics is observed at room temperature because of comparable probability of recombination process as and carrier capture to and their thermal escape from QD levels. Since the deep carrier localization and low population of delocalized carrier better temperature stability is observed in the latter case.



Standards related to Quantum dot lasers

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