Conferences related to Ohmic contacts

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2021 IEEE Photovoltaic Specialists Conference (PVSC)

Photovoltaic materials, devices, systems and related science and technology


2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe)

Energy conversion and conditioning technologies, power electronics, adjustable speed drives and their applications, power electronics for smarter grid, energy efficiency,technologies for sustainable energy systems, converters and power supplies


2020 IEEE 70th Electronic Components and Technology Conference (ECTC)

ECTC is the premier international conference sponsored by the IEEE Components, Packaging and Manufacturing Society. ECTC paper comprise a wide spectrum of topics, including 3D packaging, electronic components, materials, assembly, interconnections, device and system packaging, optoelectronics, reliability, and simulation.


2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2020 IEEE International Magnetic Conference (INTERMAG)

INTERMAG is the premier conference on all aspects of applied magnetism and provides a range of oral and poster presentations, invited talks and symposia, a tutorial session, and exhibits reviewing the latest developments in magnetism.


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Periodicals related to Ohmic contacts

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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Dielectrics and Electrical Insulation, IEEE Transactions on

Electrical insulation common to the design and construction of components and equipment for use in electric and electronic circuits and distribution systems at all frequencies.


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


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Most published Xplore authors for Ohmic contacts

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Xplore Articles related to Ohmic contacts

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Erratum

IEEE Electron Device Letters, 1985

None


High-power GaAs FET amplifier - A multigate structure

1973 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1973

None


A single-chip 8-bit A/D converter

1976 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1976

A monolithic 8-bit A/D converter fabricated with P-channel metal-gate process will be covered, citing such features as no missing codes and ability to complete a conversion in 40 μs.


A one-transistor memory cell with nondestructive readout

1973 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1973

This paper will describe a dynamic high-speed three-line access memory cell which occupies the area of a single bipolar transistor. New design is compatible with bipolar processing, with the addition of one extra masking step.


Invited: The MOS transistor

1965 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1965

None


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Educational Resources on Ohmic contacts

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IEEE-USA E-Books

  • Erratum

    None

  • High-power GaAs FET amplifier - A multigate structure

    None

  • A single-chip 8-bit A/D converter

    A monolithic 8-bit A/D converter fabricated with P-channel metal-gate process will be covered, citing such features as no missing codes and ability to complete a conversion in 40 μs.

  • A one-transistor memory cell with nondestructive readout

    This paper will describe a dynamic high-speed three-line access memory cell which occupies the area of a single bipolar transistor. New design is compatible with bipolar processing, with the addition of one extra masking step.

  • Invited: The MOS transistor

    None

  • A GaAsP planar monolithic 5 × 7 matrix alphanumeric display

    A GaAsP planar monolithic 5 × 7 matrix alphanumeric display device has been developed using an NPN triple epitaxy structure incorporating selective isolation diffusion with Al2O3sputtered film and Au-Ge, and with Ti-Al surface lead wiring.

  • Electrophysical parameters of Au-Ti ohmic contacts to polycrystalline diamond

    Ohmic contacts to polycrystalline diamond thin films were formed using Au-Ti metal structure. The current-voltage characteristics of all contacts are linear and symmetric. Measured values of contact resistivity are less than 1 % of semiconductor resistivity. Essential variation of electrophysical parameters was not observed after rapid thermal annealing at 800 °C with 60 seconds duration. The thermionic emission was determined as dominant current transport mechanism through metal-diamond interface at temperatures above 190 K. The structure study was conducted by Auger profiling and X-ray diffraction analysis. The ability of using such type of ohmic contacts as temperature detectors on heat sink was discussed.

  • Degradation of Gold-Germanium Ohmic Contact to n-GaAs

    The metallurgical and electrical investigations were carried out on the Pt/Au- Ge and Ni/Au-Ge ohmic contacts to n-GaAs in focusing the degradation during aging. The characteristic structures in the alloyed regions and their metallurgical changes during aging (330°C) were examined by means of Electron Probe Micro-Analysis. The thick Pt and Ni films in the contact systems caused the reaction during aging to proceed. The degradation of the contact resistance during aging was found to take place with the progress of the metallurgical reaction. The details of the investigation including the discussions on the degradation mechanism will be described.

  • A GaInP/GaAs HBT with a selective buried sub-collector layer grown by MOCVD

    Summary form only given. Extrinsic base-collector capacitance under the base ohmic contact region is often a large portion of the total collector capacitance which degrades the RF performance for HBTs. We present a method to reduce the extrinsic base-collector capacitance for HBT using a selective buried sub-collector (SBSC) layer. A 4000/spl Aring/ sub-collector layer is first grown on a SI GaAs substrate followed by chemical etching to form a sub- collector mesa. By choosing proper etchant, the sub-collector mesa has the shape of a trapezoid. The HBT structure is then regrown starting from the lightly doped collector layer to the emitter cap layer. Normal HBT processing is then employed. The emitter is aligned with the subcollector and the base contact region is formed on the lightly doped collector layer above the SI GaAs substrate. The collector layer under the base contact region is depleted under bias so that the extrinsic base-collector capacitance is substantially reduced. An experimental carbon-doped GaInP/GaAs HBT with SBSC grown by IMOCVD was fabricated and compared with a normal HBT.

  • GaInP/GaAs double heterojunction bipolar transistor with high f<sub>T</sub>, f<sub>max</sub>, and breakdown voltage

    We report on the dc and microwave performance of an MOCVD-grown carbon-doped GaInP/GaAs double heterojunction bipolar transistor (DHBT) with a thin highly doped n-type GaInP layer in the collector. The DHBT showed improved current- voltage characteristics at low collector-emitter bias compared with those of a DHBT without the heavily doped GaInP layer, while maintaining a high breakdown voltage (BV/sub CEO//spl sim/20 V). Small area, self-aligned emitter transistors with two 2×5 μm2emitter fingers were fabricated and exhibited fTand fmaxof 53 GHz and 75 GHz, respectively. These results indicate the promise of carbon-doped base GaInP/GaAs DHBT's for high-power microwave applications.




Jobs related to Ohmic contacts

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