Conferences related to OFETs

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2020 42nd Annual International Conference of the IEEE Engineering in Medicine & Biology Society (EMBC)

The conference program will consist of plenary lectures, symposia, workshops and invitedsessions of the latest significant findings and developments in all the major fields of biomedical engineering.Submitted papers will be peer reviewed. Accepted high quality papers will be presented in oral and postersessions, will appear in the Conference Proceedings and will be indexed in PubMed/MEDLINE


2020 IEEE International Symposium on Circuits and Systems (ISCAS)

The International Symposium on Circuits and Systems (ISCAS) is the flagship conference of the IEEE Circuits and Systems (CAS) Society and the world’s premier networking and exchange forum for researchers in the highly active fields of theory, design and implementation of circuits and systems. ISCAS2020 focuses on the deployment of CASS knowledge towards Society Grand Challenges and highlights the strong foundation in methodology and the integration of multidisciplinary approaches which are the distinctive features of CAS contributions. The worldwide CAS community is exploiting such CASS knowledge to change the way in which devices and circuits are understood, optimized, and leveraged in a variety of systems and applications.


2020 IEEE International Solid- State Circuits Conference - (ISSCC)

ISSCC is the foremost global forum for solid-state circuits and systems-on-a-chip. The Conference offers 5 days of technical papers and educational events related to integrated circuits, including analog, digital, data converters, memory, RF, communications, imagers, medical and MEMS ICs.


2020 IEEE 70th Electronic Components and Technology Conference (ECTC)

ECTC is the premier international conference sponsored by the IEEE Components, Packaging and Manufacturing Society. ECTC paper comprise a wide spectrum of topics, including 3D packaging, electronic components, materials, assembly, interconnections, device and system packaging, optoelectronics, reliability, and simulation.


2020 IEEE/MTT-S International Microwave Symposium (IMS)

The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 1996 IEEE/MTT-S International Microwave Symposium - MTT '96

  • 1997 IEEE/MTT-S International Microwave Symposium - MTT '97

  • 1998 IEEE/MTT-S International Microwave Symposium - MTT '98

  • 1999 IEEE/MTT-S International Microwave Symposium - MTT '99

  • 2000 IEEE/MTT-S International Microwave Symposium - MTT 2000

  • 2001 IEEE/MTT-S International Microwave Symposium - MTT 2001

  • 2002 IEEE/MTT-S International Microwave Symposium - MTT 2002

  • 2003 IEEE/MTT-S International Microwave Symposium - MTT 2003

  • 2004 IEEE/MTT-S International Microwave Symposium - MTT 2004

  • 2005 IEEE/MTT-S International Microwave Symposium - MTT 2005

  • 2006 IEEE/MTT-S International Microwave Symposium - MTT 2006

  • 2007 IEEE/MTT-S International Microwave Symposium - MTT 2007

  • 2008 IEEE/MTT-S International Microwave Symposium - MTT 2008

  • 2009 IEEE/MTT-S International Microwave Symposium - MTT 2009

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2010 IEEE/MTT-S International Microwave Symposium - MTT 2010

    Reports of research and development at the state-of-the-art of the theory and techniques related to the technology and applications of devices, components, circuits, modules and systems in the RF, microwave, millimeter-wave, submillimeter-wave and Terahertz ranges of the electromagnetic spectrum.

  • 2011 IEEE/MTT-S International Microwave Symposium - MTT 2011

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2012 IEEE/MTT-S International Microwave Symposium - MTT 2012

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2013 IEEE/MTT-S International Microwave Symposium - MTT 2013

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter -wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2014 IEEE/MTT-S International Microwave Symposium - MTT 2014

    IMS2014 will cover developments in microwave technology from nano devices to system applications. Technical paper sessions, interactive forums, plenary and panel sessions, workshops, short courses, industrial exhibits, and a wide array of other technical activities will be offered.

  • 2015 IEEE/MTT-S International Microwave Symposium - MTT 2015

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics. The IMS includes technical sessions, both oral and interactive, worksh

  • 2016 IEEE/MTT-S International Microwave Symposium - IMS 2016

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2017 IEEE/MTT-S International Microwave Symposium - IMS 2017

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.

  • 2018 IEEE/MTT-S International Microwave Symposium - IMS 2018

    Microwave theory and techniques, RF/microwave/millimeter-wave/terahertz circuit design and fabrication technology, radio/wireless communication.

  • 2019 IEEE/MTT-S International Microwave Symposium - IMS 2019

    Comprehensive symposium on microwave theory and techniques including active and passive circuit components, theory and microwave systems.

  • 2021 IEEE/MTT-S International Microwave Symposium - IMS 2021

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.

  • 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2024 IEEE/MTT-S International Microwave Symposium - IMS 2024

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2025 IEEE/MTT-S International Microwave Symposium - IMS 2025

    The IEEE International Microwave Symposium (IMS) is the world s foremost conferencecovering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies;encompassing everything from basic technologies to components to systems including thelatest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulationand more. The IMS includes technical and interactive sessions, exhibits, student competitions,panels, workshops, tutorials, and networking events.

  • 2026 IEEE/MTT-S International Microwave Symposium - IMS 2026

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2029 IEEE/MTT-S International Microwave Symposium - IMS 2029

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2031 IEEE/MTT-S International Microwave Symposium - IMS 2031

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2036 IEEE/MTT-S International Microwave Symposium - IMS 2036

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.



Periodicals related to OFETs

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Dielectrics and Electrical Insulation, IEEE Transactions on

Electrical insulation common to the design and construction of components and equipment for use in electric and electronic circuits and distribution systems at all frequencies.


Display Technology, Journal of

This publication covers the theory, design, fabrication, manufacturing and application of information displays and aspects of display technology that emphasize the progress in device engineering, device design, materials, electronics, physics and reliabilityaspects of displays and the application of displays.


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Nanotechnology, IEEE Transactions on

The proposed IEEE Transactions on Nanotechnology will be devoted to the publication of manuscripts of archival value in the general area of nanotechnology, that is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.



Most published Xplore authors for OFETs

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Xplore Articles related to OFETs

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Interface dipole responsible for fermi level pinning in metal/3,4,9,10 perylenetetracarboxylic dianhydride interfaces

2007 International Workshop on Physics of Semiconductor Devices, 2007

Current injection behavior in metal/3,4,9,10 perylenetetracarboxylic dianhydride (PTCDA) interfaces have been systematically studied. Observed interface behaviors show that the barrier of charge injection cannot be explained by simple vacuum level alignment scheme. Moreover injection barrier is found almost independent of metal work function. These observations are explained by the changes of barrier height due to interface dipole barrier which compensate ...


Fundamental Benefits of the Staggered Geometry for Organic Field-Effect Transistors

IEEE Electron Device Letters, 2011

In this letter, decisive advantages of the staggered-type organic field-effect transistors (OFETs) over the coplanar type are elucidated by 2-D device simulation. It is found that the charge transport in the channel is not limited by the contact electrode in staggered OFETs, whereas coplanar OFETs show strongly contact-limited behavior. This dissimilarity originates from the continuity (staggered) or discontinuity (coplanar) of ...


Charge-based Mobility Modeling for Organic Semiconductors

2009 13th International Workshop on Computational Electronics, 2009

Charge transport in organic semiconductors is investigated and a theoretical description of small polaron dc conductivity model is presented. The approach is based on Frohlich Hamiltonian. The model is implemented in a device simulator to analyze the electrical characteristics of pentacene-based Organic Thin Film Transistors (OTFT).


Unipolar and bipolar organic field-effect transistors

2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2008

This paper describes the characteristics and performance levels of unipolar as well as bipolar organic field-effect transistors (FETs) and also the possible applications enabled by these performance levels. Unipolar FETs can be either p-channel or n-channel depending on the active semiconductor chosen as well as the nature of the semiconductor-insulator interface, and bipolar FETs can be used as light-emitting devices. ...


Improved morphology and bias stress study of a naphthalenetetracarboxylic diimide bottom contact field effect transistor

2009 International Semiconductor Device Research Symposium, 2009

In this study, bottom contact OFETs with various surface treatments based on 1, 4, 5, 8-naphthalene-teracarboxylic di-imide (NTCDI) derivatives with three different fluorinated N-substituents, systematically investigated with a particular emphasis on the interplay between the morphology of the organic semiconductor films and the electrical device properties. The topography of the NTCDI bottom contact device without any surface treatment was first ...



Educational Resources on OFETs

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IEEE.tv Videos

No IEEE.tv Videos are currently tagged "OFETs"

IEEE-USA E-Books

  • Interface dipole responsible for fermi level pinning in metal/3,4,9,10 perylenetetracarboxylic dianhydride interfaces

    Current injection behavior in metal/3,4,9,10 perylenetetracarboxylic dianhydride (PTCDA) interfaces have been systematically studied. Observed interface behaviors show that the barrier of charge injection cannot be explained by simple vacuum level alignment scheme. Moreover injection barrier is found almost independent of metal work function. These observations are explained by the changes of barrier height due to interface dipole barrier which compensate for the difference of work function of PTCDA and metals leading to a metal independent injection barrier or Fermi level pinning at metal/PTCDA interfaces.

  • Fundamental Benefits of the Staggered Geometry for Organic Field-Effect Transistors

    In this letter, decisive advantages of the staggered-type organic field-effect transistors (OFETs) over the coplanar type are elucidated by 2-D device simulation. It is found that the charge transport in the channel is not limited by the contact electrode in staggered OFETs, whereas coplanar OFETs show strongly contact-limited behavior. This dissimilarity originates from the continuity (staggered) or discontinuity (coplanar) of the carrier concentration at the channel ends, which is directly connected to the channel potential profile. The calculated current-voltage curves also support these arguments as the current in coplanar OFETs follows the contact-limited transistor model.

  • Charge-based Mobility Modeling for Organic Semiconductors

    Charge transport in organic semiconductors is investigated and a theoretical description of small polaron dc conductivity model is presented. The approach is based on Frohlich Hamiltonian. The model is implemented in a device simulator to analyze the electrical characteristics of pentacene-based Organic Thin Film Transistors (OTFT).

  • Unipolar and bipolar organic field-effect transistors

    This paper describes the characteristics and performance levels of unipolar as well as bipolar organic field-effect transistors (FETs) and also the possible applications enabled by these performance levels. Unipolar FETs can be either p-channel or n-channel depending on the active semiconductor chosen as well as the nature of the semiconductor-insulator interface, and bipolar FETs can be used as light-emitting devices. Bipolar FETs can be designed with a single semiconductor or in configurations involving material mixtures, vertical and lateral heterostructures.

  • Improved morphology and bias stress study of a naphthalenetetracarboxylic diimide bottom contact field effect transistor

    In this study, bottom contact OFETs with various surface treatments based on 1, 4, 5, 8-naphthalene-teracarboxylic di-imide (NTCDI) derivatives with three different fluorinated N-substituents, systematically investigated with a particular emphasis on the interplay between the morphology of the organic semiconductor films and the electrical device properties. The topography of the NTCDI bottom contact device without any surface treatment was first characterized by AFM.

  • Analog Signal Processing with Organic FETs

    Regular and differential amplifiers as well as differential-to-single-ended circuits based on organic FETs (OFETs) are demonstrated. A numerical OFET model suitable for analog design is developed. Unity-gain bandwidths in excess of 1.4kHz and DC-gains of 10dB are achieved

  • Device characteristics of vertical organic photoelectric transistor

    Vertical organic photoelectric transistors (OPTs) with copper phthalocyanine (CuPc) as active layers have been fabricated. The structure of OPTs fabricated consists of five layers of Cu/CuPc/Al/CuPc/ indium tin oxide (ITO). Compared with traditional organic field effect transistor (OFETs), the structure of vertical conductive channel in OPTs is advanced to static characteristics with high working current value, low operation voltage and large switching current ratio. The static current-voltage output characteristics of OPTs in 700 nm light and in dark are observed. It can be seen that emitter-collector current (Iec) increases steadily with the increase of emitter-collector voltage (Vec). But Iec decreases with the increase o f base voltage (Vb), and that is the increase of Schottky barrier in base region. The operation current in 700 nm light is larger than the one in dark. The switching current ratio is 14.5.

  • Using molecular monolayers as self-assembled photoresist

    The authors investigated the use of a self-assembled monolayer (SAM) of molecules as resist for photolithography. The SAM constitutes an atomically uniform photosensitive layer with the nominal thickness of 1-2 nm. This molecular monolayer can be patterned by selective exposure to UV light. The removal of the molecules was characterized from the surface with x-ray photoelectron spectroscopy (XPS). Various post processing methods was investigated on the surface patterned with molecules including wet etching and polymer self-assembly based on surface energy difference. An organic field effect transistor (OFET) fabricated using the lithography system was presented and discussed the potential for making devices directly with the molecules that participate in the lithography scheme.

  • Plastic electronics based on semiconducting polymers

    Plastic electronics are set to be one of the next applications of semiconducting polymers appearing on the market. The electronics are constructed from integrated plastic circuits (IPC) based on organic field effect transistors (OFETs). The aim of this technology is to create low cost electronics using inexpensive standard polymer technologies in combination with laser and/or printing technologies which allow mass production for low cost mass products like ident tags, electronic watermarks, smart cards, electronic labels. Although many improvements have been achieved during the last few years, numerous problems still must be solved. The authors present recent results for OFETs with conjugated polymers like polythiophenes as active semiconducting material. The performance of the OFETs strongly depends on the quality of the semiconducting layer, i.e. molecular ordering, homogeneity, purity and doping level. Several aspects of preparing OFETs with special emphasis on the effect of the properties of the semiconducting polymer on the transistor parameters are discussed.

  • Functionalized organic semiconductor-based field-effect transistors for phosphonate vapor detection

    In this talk, we report initial studies of p-type oligomer OFETs, with hydroxyl and phenol functionalized semiconductor blends serving as receptor layers, responding to the weakly basic analyte dimethyl methylphosphonate (DMMP) that simulates phosphonate nerve agents. The hydroxyl group is the simplest receptor that could be utilized for enhancing this interaction. At least one blend appears to be single-phase based on x-ray diffraction and electron microscopy.



Standards related to OFETs

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IEEE Standard for Test Methods for the Characterization of Organic Transistors and Materials

This standard describes a method for characterizing organic electronic devices, including measurement techniques, methods of reporting data, and the testing conditions during characterization.