Conferences related to Niobium compounds

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2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2020 IEEE International Instrumentation and Measurement Technology Conference (I2MTC)

The Conference focuses on all aspects of instrumentation and measurement science andtechnology research development and applications. The list of program topics includes but isnot limited to: Measurement Science & Education, Measurement Systems, Measurement DataAcquisition, Measurements of Physical Quantities, and Measurement Applications.


2020 IEEE International Magnetic Conference (INTERMAG)

INTERMAG is the premier conference on all aspects of applied magnetism and provides a range of oral and poster presentations, invited talks and symposia, a tutorial session, and exhibits reviewing the latest developments in magnetism.


2020 IEEE Photovoltaic Specialists Conference (PVSC)

Promote science and engineering of photovoltaic materials, devices, systems and applications


2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)

Ferroelectric materials and applications


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Periodicals related to Niobium compounds

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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Consumer Electronics, IEEE Transactions on

The design and manufacture of consumer electronics products, components, and related activities, particularly those used for entertainment, leisure, and educational purposes


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


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Most published Xplore authors for Niobium compounds

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Xplore Articles related to Niobium compounds

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MOS devices

2009 Device Research Conference, 2009

None


Recent Progress In The Growth, Fabrication And Application Of Potassium Niobate Single Crystals

LEOS '92 Conference Proceedings, 1992

None


High efficiency and low consumption material electrical generators

IEEE Transactions on Magnetics, 1983

In conjunction with energy shortages and rising fuel and material prices, the development of high efficiency and low consumption material electrical generators will play an important role in the efforts to maintain economic standards for any country. The need for increased efficiency should be considered with improved availability and reliability, that is essential to guarantee the maximum usage of efficient ...


Key sub 1nm EOT CMOS enabler by comprehensive PMOS design

Proceedings of 2010 International Symposium on VLSI Technology, System and Application, 2010

A high performance CMOS HK/MG sub 1nm EOT solution is demonstrated. The drive currents at Ioff = 100 nA/μm with VDD = 1 V are 1.25 mA/μm and 0.56 mA/μm for n and pMOS respectively without strain boost. Through a novel process integration design, PMOS EWF roll-off and NBTI problems with EOT scaling are overcome until sub 1nm EOT region. ...


Prototype fabrication of ultrafine filament NbTi conductors for the SSC

IEEE Transactions on Magnetics, 1987

Production quantities of multifilamentary NbTi/Cu composite wire have been fabricated for SSC dipole magnet development. These composites contained 10,000 to 37,000 filaments having a diameter of 5.0 to 2.7 micrometers at final wire size. The large number of filaments in these composites has been achieved by employing a double extrusion process. The critical current density (Jc) has been optimized for ...


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Educational Resources on Niobium compounds

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IEEE-USA E-Books

  • MOS devices

    None

  • Recent Progress In The Growth, Fabrication And Application Of Potassium Niobate Single Crystals

    None

  • High efficiency and low consumption material electrical generators

    In conjunction with energy shortages and rising fuel and material prices, the development of high efficiency and low consumption material electrical generators will play an important role in the efforts to maintain economic standards for any country. The need for increased efficiency should be considered with improved availability and reliability, that is essential to guarantee the maximum usage of efficient equipment. This report covers superconductive generators which have been designed and developed in the USSR during the last few years.

  • Key sub 1nm EOT CMOS enabler by comprehensive PMOS design

    A high performance CMOS HK/MG sub 1nm EOT solution is demonstrated. The drive currents at Ioff = 100 nA/μm with VDD = 1 V are 1.25 mA/μm and 0.56 mA/μm for n and pMOS respectively without strain boost. Through a novel process integration design, PMOS EWF roll-off and NBTI problems with EOT scaling are overcome until sub 1nm EOT region. The PMOS -0.25V Vt @1um Lg and NBTI 10 years life time @0.7V overdrive are thus offered with 0.94nm EOT. Mechanisms and guidelines for solving theses issues are provided after a comprehensive study here. These concepts are beneficial to either gate-first or gate-last approach with EOT scaling.

  • Prototype fabrication of ultrafine filament NbTi conductors for the SSC

    Production quantities of multifilamentary NbTi/Cu composite wire have been fabricated for SSC dipole magnet development. These composites contained 10,000 to 37,000 filaments having a diameter of 5.0 to 2.7 micrometers at final wire size. The large number of filaments in these composites has been achieved by employing a double extrusion process. The critical current density (Jc) has been optimized for the final wires as well as for samples taken from the first stage extrusion. Jc ranged from 2300 to 3400 A/mm<sup>2</sup>at 5 tesla depending on filament size and process history. The Jc results obtained in this investigation along with resistive transition parameter "n" are reported.

  • Field emission characteristics of transition metal nitrides

    Nitrides of transition metals such as Nb, Zr, Ti etc. are very hard and electrically conductive like a metal. Their melting points are very high. Their work functions have been reported to be very low, typically less than 4 eV, which is much less than the work functions of W and Mo. These are desirable features for field emitters. Here field emission characteristics of transition metal nitrides were examined. The nitrides were fabricated by heating the raw metals in ammonia gas. Among the nitrides examined, the NbN emitters gave the most stable field emission current.

  • Barium sodium niobate acoustooptic mode-locker/frequency-doubler (AOML/FD) for Nd:YAG

    None

  • Ultra Stable High Field Superconducting Dipoles

    Tolerance of superconducting magnets to beam heating can be crucial. The magnets described produce a dipole field between parallel current sheets. Images in iron extend the sheets. The field is parallel to the current sheets so that high purity aluminum spacers can extend over the full length and height of the coil. High aluminum thermal conductivity and diffusivity results in locally produced heat being dissipated into helium over a large area. All magnets show little training with complete "memory" to ~ 100% of short sample. B induced quenching is not observed. The 2 m, 8° dipole coils do not quench at 4 T if the correcting coil is driven normal, dissipating > 1 kW. Intralayer quench propagation induced by 30 GeV protons is described. A 1 m, 6 T pulsed dipole first quenched at 5 T. Pulsing losses at 0.5 T/sec are small.

  • New observations on the damage relaxation mechanisms in p-MOSFETs under dynamic NBTI stressing

    Owing to its impact on circuit operation, the degradation of pMOSFETs under dynamic NBTI stressing has been intensively studied. Of specific interest is the damage recovery phenomenon, which eases the constraints imposed by static stress. This paper presents new observations on the relationship between threshold voltage shift (|/spl Delta/V/sub t/|) and interface states (/spl Delta/N/sub it/), for different dynamic NBTI stress modes. Results from unipolar stressing reveal a unique two-stage relaxation behavior. In the first stage, reduction in damage involves nearly equal relaxation of /spl Delta/N/sub it/ and the associated NBTI induced positive charge trapping (/spl Delta/N/sub ot/). A subsequent transition to a second stage, involving a more rapid relaxation of /spl Delta/N/sub ot/, is observed beyond a certain damage level. This finding implies that /spl Delta/N/sub ot/, relaxation has an equally important, if not, a more dominant impact, compared to /spl Delta/N/sub it/, relaxation, on the dynamic NBTI reliability of the p-MOSFET.

  • Size and arrangement effect of Nb artificial pinning centers on flux pinning in Nb-Ti multifilamentary wires

    Flux pinning properties of niobium-titanium multifilamentary wires with artificial pinning centers (APC) were studied. Previous investigations on the effects of different APC materials (Nb, Nb-7.5 wt.% Ta, Ta) on the flux pinning properties found that Nb pins had larger pinning force in comparison with other material and improved critical current density drastically in magnetic fields up to 5 T. In this paper, to increase the flux pinning force, 1, 7, 19 and 37 Nb pins were introduced into Nb-46.5 wt.% Ti filaments, and the volume fraction of Nb pins was varied from 0 to 25%. The effect of the size and arrangement of the Nb pins on the flux pinning properties was investigated. Consequently, a peak of the bulk flux pinning force density (F/sub P/) as a function of magnetic field shifts to a higher field as the pin interval becomes smaller. This behavior becomes more pronounced with decreasing a pin size because the pin deforms into a ribbon-like configuration. Furthermore, we investigated the effect of heat treatment on flux pinning to study the effect of boundary conditions between pin and Nb-Ti matrix. We also discuss the scaling behavior of F/sub P/.



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