Conferences related to Nickel alloys

Back to Top

2023 Annual International Conference of the IEEE Engineering in Medicine & Biology Conference (EMBC)

The conference program will consist of plenary lectures, symposia, workshops and invitedsessions of the latest significant findings and developments in all the major fields of biomedical engineering.Submitted full papers will be peer reviewed. Accepted high quality papers will be presented in oral and poster sessions,will appear in the Conference Proceedings and will be indexed in PubMed/MEDLINE.


2020 IEEE 70th Electronic Components and Technology Conference (ECTC)

ECTC is the premier international conference sponsored by the IEEE Components, Packaging and Manufacturing Society. ECTC paper comprise a wide spectrum of topics, including 3D packaging, electronic components, materials, assembly, interconnections, device and system packaging, optoelectronics, reliability, and simulation.


2020 IEEE Applied Power Electronics Conference and Exposition (APEC)

APEC focuses on the practical and applied aspects of the power electronics business. Not just a power designer’s conference, APEC has something of interest for anyone involved in power electronics including:- Equipment OEMs that use power supplies and converters in their equipment- Designers of power supplies, dc-dc converters, motor drives, uninterruptable power supplies, inverters and any other power electronic circuits, equipments and systems- Manufacturers and suppliers of components and assemblies used in power electronics- Manufacturing, quality and test engineers involved with power electronics equipment- Marketing, sales and anyone involved in the business of power electronic- Compliance engineers testing and qualifying power electronics equipment or equipment that uses power electronics


2020 IEEE International Conference on Plasma Science (ICOPS)

IEEE International Conference on Plasma Science (ICOPS) is an annual conference coordinated by the Plasma Science and Application Committee (PSAC) of the IEEE Nuclear & Plasma Sciences Society.


2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


More Conferences

Periodicals related to Nickel alloys

Back to Top

Aerospace and Electronic Systems Magazine, IEEE

The IEEE Aerospace and Electronic Systems Magazine publishes articles concerned with the various aspects of systems for space, air, ocean, or ground environments.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Biomedical Engineering, IEEE Transactions on

Broad coverage of concepts and methods of the physical and engineering sciences applied in biology and medicine, ranging from formalized mathematical theory through experimental science and technological development to practical clinical applications.


Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


More Periodicals

Most published Xplore authors for Nickel alloys

Back to Top

Xplore Articles related to Nickel alloys

Back to Top

Degradation of Gold-Germanium Ohmic Contact to n-GaAs

12th International Reliability Physics Symposium, 1974

The metallurgical and electrical investigations were carried out on the Pt/Au- Ge and Ni/Au-Ge ohmic contacts to n-GaAs in focusing the degradation during aging. The characteristic structures in the alloyed regions and their metallurgical changes during aging (330°C) were examined by means of Electron Probe Micro-Analysis. The thick Pt and Ni films in the contact systems caused the reaction during ...


Formation of arsenic segregated Ytterbium and Nickel silicide using microwave annealing

2013 13th International Workshop on Junction Technology (IWJT), 2013

This work investigates the formation of arsenic segregated Ytterbium and Nickel silicide using low-temperature microwave annealing. Two types of dopant segregation approaches, implant-before-silicidation and implantation-through- metal, are performed to examine the electrical properties of the microwave annealed silicide. Results of current-voltage curves and dopant distribution profiles are compared with those using rapid thermal annealing.


Ni silicides formation: Use of Ge and Pt to study the diffusing species, lateral growth and relaxation mechanisms

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), 2015

The Ni silicide formation was studied by in situ X-ray diffraction, APT and TEM through the use of either a thin layer of Ge (1 nm) deposited between the Ni film and a Si substrate or a Ni(10%Pt) film. The Ge was used as a marker for the diffusing species during Ni silicide formation and the Ni(10%Pt) allows revealing the ...


Electronic and structural characteristics of atomic diffusion in Fe/Al [001] and Al/Fe [001] systems

Digest of Papers Microprocesses and Nanotechnology 2005, 2005

In this study, the atomistic behaviors of surface diffusion and incorporation in Fe-Al multilayer systems were quantitatively investigated using density functional theory (DFT) calculation. The energy barrier, energy gain, charge density distribution, and density of states (DOS) were analyzed, in detail, to determine the factors governing the interface morphology and the growth mode for multilayer fabrication of extremely reduced dimension.


Simplified and programmable design approach for strain sensor interface

2016 International Conference on Recent Advances and Innovations in Engineering (ICRAIE), 2016

In this paper, a simplified technique is proposed which enables the user to nullify offset whenever power is switched on of the circuit and also based on the requirement of the user. In this method strain sensor is the part of the resistive bridge which is used as Quarter Bridge. The voltage excitation to the bridge is provided by a ...


More Xplore Articles

Educational Resources on Nickel alloys

Back to Top

IEEE-USA E-Books

  • Degradation of Gold-Germanium Ohmic Contact to n-GaAs

    The metallurgical and electrical investigations were carried out on the Pt/Au- Ge and Ni/Au-Ge ohmic contacts to n-GaAs in focusing the degradation during aging. The characteristic structures in the alloyed regions and their metallurgical changes during aging (330°C) were examined by means of Electron Probe Micro-Analysis. The thick Pt and Ni films in the contact systems caused the reaction during aging to proceed. The degradation of the contact resistance during aging was found to take place with the progress of the metallurgical reaction. The details of the investigation including the discussions on the degradation mechanism will be described.

  • Formation of arsenic segregated Ytterbium and Nickel silicide using microwave annealing

    This work investigates the formation of arsenic segregated Ytterbium and Nickel silicide using low-temperature microwave annealing. Two types of dopant segregation approaches, implant-before-silicidation and implantation-through- metal, are performed to examine the electrical properties of the microwave annealed silicide. Results of current-voltage curves and dopant distribution profiles are compared with those using rapid thermal annealing.

  • Ni silicides formation: Use of Ge and Pt to study the diffusing species, lateral growth and relaxation mechanisms

    The Ni silicide formation was studied by in situ X-ray diffraction, APT and TEM through the use of either a thin layer of Ge (1 nm) deposited between the Ni film and a Si substrate or a Ni(10%Pt) film. The Ge was used as a marker for the diffusing species during Ni silicide formation and the Ni(10%Pt) allows revealing the lateral growth of NiSi.

  • Electronic and structural characteristics of atomic diffusion in Fe/Al [001] and Al/Fe [001] systems

    In this study, the atomistic behaviors of surface diffusion and incorporation in Fe-Al multilayer systems were quantitatively investigated using density functional theory (DFT) calculation. The energy barrier, energy gain, charge density distribution, and density of states (DOS) were analyzed, in detail, to determine the factors governing the interface morphology and the growth mode for multilayer fabrication of extremely reduced dimension.

  • Simplified and programmable design approach for strain sensor interface

    In this paper, a simplified technique is proposed which enables the user to nullify offset whenever power is switched on of the circuit and also based on the requirement of the user. In this method strain sensor is the part of the resistive bridge which is used as Quarter Bridge. The voltage excitation to the bridge is provided by a voltage reference. The output of the bridge reaches precision sensor signal amplifier through over-voltage protection circuit. Dynamic range and bridge offset adjustment both can be achieved in the circuit as per requirement. High precision Analog to Digital Converter digitizes data. The output is then captured on the monitoring computer to verify the results.

  • Influence of hydrogen on magnetic properties of soft magnetic amorphous alloys

    The influence of electrolytic hydrogenation on the magnetic properties of three different kinds of amorphous alloys has been investigated. The alloys studied were Fe/sub 83.3/Si/sub 3.5/B/sub 11.2/C/sub 2/, Fe/sub 38/Ni/sub 38/Mo/sub 2/Si/sub 8/B/sub 14/, and (Co/sub 86/Fe/sub 5/Cr/sub 9/)/sub 75/Si/sub 10/B/sub 15/. The experimental results showed that after hydrogenation the samples became very brittle and the soft magnetic properties degraded dramatically, but saturation magnetization sigma /sub s/ and average hyperfine field increased markedly. As hydrogen evolved from the charged samples which were placed in air at room temperature, the magnetic properties, toughness, and average hyperfine field were gradually recovered.<<ETX>>

  • Origin of high coercivities in as-cast SmFe<inf>4-x</inf>Ni<inf>x</inf>B alloys

    Large coercive fields have been observed in as-cast SmFe4-xNixB alloys. The coercive fields increase drastically at lower temperatures and complete hysteresis loops cannot be measured at cryogenic temperatures. Microstructure studies show the presence of two types of grain with slightly different chemical composition (Fe-rich or Ni-rich) but with the same crystal structure. These differences in chemical composition may also occur at the microscopic level and can cause fluctuations in exchange and magnetic anisotropy that can pin the domain walls.

  • Magnetic and electrical characteristics of Supermalloy thin tape toroidal cores

    This work presents the report on what the effect tape thickness has on the DC and AC coercivity, specific core loss, and dynamic B-H loop. The material used in this investigation is known in the trade as Supermalloy, which is a nickel- iron alloy whose chemical composition in percent mass is 79% Ni, 17% Fe, and 4% Mo. The Mo is added to increase the resistivity of the material and thus, reduce the eddy current loss. The Supermalloy tapes were wound on ceramic bobbins. The results of this investigations are finally presented.

  • Fabrication and simulation of electrically reconfigurable dual metal-gate planar field-effect transistors for dopant-free CMOS

    In this paper, we illustrate by simulation and extend our previous work by demonstration of fabricated devices of electrostatically doped, reconfigurable planar field-effect-transistors with dual work function metal gates. The technological cornerstones for this dual-gated general purpose FET contain Schottky S/D junctions on a silicon-on-insulator substrate. The transistor type, i.e. n-type or p-type FET, is electrically selectable in operation by applying a control-gate voltage which significantly increases the versatility and flexibility in the design of digital integrated circuits.

  • Magnetism and local environment model in (Ni<inf>1-c</inf>Co<inf>c</inf>)<inf>0.78</inf>P<inf>0.14</inf>B<inf>0.08</inf>amorphous alloys

    The magnetic properties of amorphous alloys (Ni1-cCoc)0.78P0.14B0.08have been investigated. The samples were prepared by the splat-cooling method. The Curie temperatures have been determined and the magnetization measurements performed for 1.7°K\leq T \leq 270\degK and fields up to 70 kOe. Ni0.78P0.14B0.08is paramagnetic, whereas Co0.78P0.14B0.08is ferromagnetic until the crystallization temperature (678°K). The average moment per cobalt atom is1.15 \mu_{B}. In (Ni1-cCoc)0.78P0.14B0.08the critical concentration for the paramagnetic-ferromagnetic transition isc \simeq 0.15, this transition occurs in an inhomogeneous way. The saturation magnetization in the whole concentration range can be interpreted (as for some crystallized alloys and compounds) by a local environment model, when a reasonable short range order is assumed. In such a model the magnetic moment per cobalt atom is related merely to the number of its Co first neighbors nCo. For nCo=0 and 1 the cobalt atom is not magnetic, for nCo= 2 and 3 it carries a small moment\mu_{1} = 0.50 \mu_{B}and for nCo> 3 it is magnetic with\mu_{2} = 1.15 \mu_{B}as in Co0.78P0.14B0.08; the nickel atoms do not carry a substantial moment in the entire concentration range. These features are comparable to those obtained in some crystalline alloys.



Standards related to Nickel alloys

Back to Top

No standards are currently tagged "Nickel alloys"


Jobs related to Nickel alloys

Back to Top