Conferences related to Neutron radiation effects

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2020 IEEE International Conference on Plasma Science (ICOPS)

IEEE International Conference on Plasma Science (ICOPS) is an annual conference coordinated by the Plasma Science and Application Committee (PSAC) of the IEEE Nuclear & Plasma Sciences Society.


2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2020 IEEE International Magnetic Conference (INTERMAG)

INTERMAG is the premier conference on all aspects of applied magnetism and provides a range of oral and poster presentations, invited talks and symposia, a tutorial session, and exhibits reviewing the latest developments in magnetism.


2020 IEEE International Reliability Physics Symposium (IRPS)

Meeting of academia and research professionals to discuss reliability challenges


2020 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC)

All areas of ionizing radiation detection - detectors, signal processing, analysis of results, PET development, PET results, medical imaging using ionizing radiation


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Periodicals related to Neutron radiation effects

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Antennas and Propagation, IEEE Transactions on

Experimental and theoretical advances in antennas including design and development, and in the propagation of electromagnetic waves including scattering, diffraction and interaction with continuous media; and applications pertinent to antennas and propagation, such as remote sensing, applied optics, and millimeter and submillimeter wave techniques.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Computer Architecture Letters

Rigorously peer-reviewed forum for publishing early, high-impact results in the areas of uni- and multiprocessors computer systems, computer architecture workload characterization, performance evaluation and simulation techniques, and power-aware computing


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Electromagnetic Compatibility, IEEE Transactions on

EMC standards; measurement technology; undesired sources; cable/grounding; filters/shielding; equipment EMC; systems EMC; antennas and propagation; spectrum utilization; electromagnetic pulses; lightning; radiation hazards; and Walsh functions


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Most published Xplore authors for Neutron radiation effects

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Xplore Articles related to Neutron radiation effects

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2003 IEEE Radiation Effects Data Workshop

2003 IEEE Radiation Effects Data Workshop, 2003

The following topics are dealt with: ground-based, and in-flight single event effects on piece-part commercial off the shelf as well as space qualified components; total ionizing dose, including ELDRS and displacement damage; and proton and neutron test facilities in the United States, Canada, and Russia.


Investigation of radiation damage in the SLD CCD vertex detector 2003 IEEE nuclear science symposium, medical imaging conference, and workshop of room-temperature semiconductor detectors

2003 IEEE Nuclear Science Symposium. Conference Record (IEEE Cat. No.03CH37515), 2003

Early in the operation of the SLD CCD vertex detector (VXD3) at the SLC, radiation damage to the CCDs was observed. It is well known that low energy light particles (electrons and photons) are a few orders of magnitude less effective than heavy particles (neutrons or heavy charged particles) in the generation of radiation damage effects in silicon. The SLD ...


Ultrahigh Fluence Radiation Monitoring Technology for the Future Circular Collider at CERN

IEEE Transactions on Nuclear Science, 2018

The future circular collider (FCC) is foreseen as the next-generation ~100-km long synchrotron to be built in the Geneva area starting 2050. This machine is expected to reach an energy level of 100 TeV generating unprecedented radiation levels >100 times higher than in today’s large hadron collider (LHC). Current radiation monitoring system, like the RADMONs employed in the LHC, will ...


Gamma-ray and fast neutron radiation effects on thin film superconductors

IEEE Transactions on Nuclear Science, 1994

The gamma-ray and neutron radiation hardness of YBa/sub 2/Cu/sub 3/O/sub 7-x/, Tl/sub 2/Ba/sub 2/CaCu/sub 2/O/sub 8+x/ and Tl/sub 2/Ba/sub 2/Ca/sub 2/Cu/sub 3/O/sub 10+x/ superconducting thin films deposited by off-axis sputtering and laser-ablation deposition techniques on substrates of MgO and LaAlO/sub 3/ was investigated. The unbiased samples were irradiated with 662 keV gamma-rays up to a cumulative dose of 1.5 Mrad(Si) ...


Electrical characteristics of GaAsP Schottky-barrier diodes

1970 International Electron Devices Meeting, 1970

Schottky-barrier diodes of chromium on n-type epitaxial gallium arsenide phosphide (GaAsP) were studied from 25° to 440°C. The diodes showed significant rectification properties up to a temperature of 440°C. At high temperature the reverse leakage current was 1.15 milliamperes at 25 volts with a diode area of 1.14 × 10-3cm2as compared with 0.25 microampere at room temperature.


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Educational Resources on Neutron radiation effects

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IEEE-USA E-Books

  • 2003 IEEE Radiation Effects Data Workshop

    The following topics are dealt with: ground-based, and in-flight single event effects on piece-part commercial off the shelf as well as space qualified components; total ionizing dose, including ELDRS and displacement damage; and proton and neutron test facilities in the United States, Canada, and Russia.

  • Investigation of radiation damage in the SLD CCD vertex detector 2003 IEEE nuclear science symposium, medical imaging conference, and workshop of room-temperature semiconductor detectors

    Early in the operation of the SLD CCD vertex detector (VXD3) at the SLC, radiation damage to the CCDs was observed. It is well known that low energy light particles (electrons and photons) are a few orders of magnitude less effective than heavy particles (neutrons or heavy charged particles) in the generation of radiation damage effects in silicon. The SLD environment was known to be dominated by electrons and photons, and a large fluence of neutrons was not expected. Therefore, this damage is puzzling. A CCD based detector is a leading option for vertex detection at the future linear collider. A full understanding of background models in linear colliders; and the associated damage is needed. Earlier results on neutron damage to an SLD CCD were reported at the 1999 IEEE NSS, and these new results complement our old results. In addition to tests on controlled exposures of individual CCDs, we have studied the nature of the traps produced in the SLD vertex detector to assess their origin heavy or light particles?.

  • Ultrahigh Fluence Radiation Monitoring Technology for the Future Circular Collider at CERN

    The future circular collider (FCC) is foreseen as the next-generation ~100-km long synchrotron to be built in the Geneva area starting 2050. This machine is expected to reach an energy level of 100 TeV generating unprecedented radiation levels >100 times higher than in today’s large hadron collider (LHC). Current radiation monitoring system, like the RADMONs employed in the LHC, will not be capable to function and withstand this harsh environment. The development of a new ultrahigh fluence and dose radiation sensor is a key element to allow irradiation tests of FCC equipment and, at a later stage, to monitor radiation levels in the FCC itself. In this paper, we present an innovative dosimetry solution based on thin layers of metals, which resistivity is shown to increase significantly due to the accumulated displacement damage. After describing the fabrication techniques used to manufacture these radiation-dependent resistors, we show and discuss the results of the irradiation experiments carried out with neutrons (up to 1018n/cm2at the JSI TRIGA reactor) and with protons (up to 5.2$\times 10^{16}$p/cm2at CERN IRRAD Facility) to validate the proposed concept of possible ultrahigh fluence FCC dosimeter.

  • Gamma-ray and fast neutron radiation effects on thin film superconductors

    The gamma-ray and neutron radiation hardness of YBa/sub 2/Cu/sub 3/O/sub 7-x/, Tl/sub 2/Ba/sub 2/CaCu/sub 2/O/sub 8+x/ and Tl/sub 2/Ba/sub 2/Ca/sub 2/Cu/sub 3/O/sub 10+x/ superconducting thin films deposited by off-axis sputtering and laser-ablation deposition techniques on substrates of MgO and LaAlO/sub 3/ was investigated. The unbiased samples were irradiated with 662 keV gamma-rays up to a cumulative dose of 1.5 Mrad(Si) and with neutron nuences up to 1/spl times/10/sup 14/ neutrons/cm/sup 2/. It was determined through nondestructive critical temperature transition, T/sub c/, and critical current density, J/sub c/, measurements and X-ray diffraction analysis that the thin film superconductors were radiation hard up to moderate levels of neutrons and gamma-rays. It was also determined that extended exposure to moderately humid air degraded the critical current density of all the films.<<ETX>>

  • Electrical characteristics of GaAsP Schottky-barrier diodes

    Schottky-barrier diodes of chromium on n-type epitaxial gallium arsenide phosphide (GaAsP) were studied from 25° to 440°C. The diodes showed significant rectification properties up to a temperature of 440°C. At high temperature the reverse leakage current was 1.15 milliamperes at 25 volts with a diode area of 1.14 × 10-3cm2as compared with 0.25 microampere at room temperature.

  • Neutron radiation effects in GaAs planar doped barrier diodes

    The degradation of GaAs planar doped barrier diodes subject to neutron irradiation is discussed. It is shown that for fluences as high as 10/sup 15/ cm/sup -2/, the diode characteristics are very well preserved, which strengthens the rationale for using these devices in place of Schottky diodes in harsh working environments such as nuclear instrumentation and space.<<ETX>>

  • Neutron radiation effects in high electron mobility transistors [AlGaAs/GaAs]

    The effect of fast neutron radiation has been investigated in High Electron Mobility Transistors (HEMT's). Devices with different layer structures have been employed for the better understanding of failure mechanism sources. The deep traps introduced by neutron irradiation in the AlGaAs donor layer have been, for the first time, studied. The application of charge control model allowed the determination of buffer layer degradation and the theoretical estimation of the shift of the threshold voltage.

  • Study of the luminescence from infrared window materials undergoing pulsed nuclear irradiation

    Summary Form only given, as follows. Pulsed nuclear irradiation of infrared window materials was performed at the TRIGA nuclear reactor. The pulse was 17 ms (FWHM) in duration, and the 0.1 Mrad dose consisted of 5% neutrons and 95% gamma rays. The samples under study included sapphire, CsI, ALON, and spinel. The radioluminescence exhibited by these samples during the irradiation was recorded and analyzed. Luminescence was observed in the 1.0-4.5 mu m range and in the visible range. The total emission over 1.0-4.5 mu m range was recorded with a PbSe detector with a cutoff wavelength of 4.5 mu m. Spectral information in the visible and near-infrared ranges was obtained with filters and with an optical multichannel analyzer. A kinetic model for radioluminescence was developed from the results.<>

  • Studies of irradiation on elastomeric insulation by gamma and neutron flux and thermal radiation degradation

    Polymeric insulating materials such as are used in electric cables when used in a radioactive environment will in normal operation be subjected to a background irradiation throughout its operating life. The irradiation will consist of gamma rays and neutrons. In an accident situation, the insulation would have to withstand high levels of irradiation. In the present work, irradiation was carried out in a reactor on power. The plaques 200 mm square and varying in thickness from 2.2 to 3.3 mm, depending on material, were folded into aluminium cans and fed into a reactor channel, the same channel and position in the channel being used so that samples received the same radiation. Samples were subjected to two levels of irradiation, the higher being 2*10/sup 7/ rads gamma and 5*10/sup 16/ neutrons/cm/sup 2/. This was followed by high pressure steam and temperature cycles. Changes in the dielectric properties, capacitance and loss tangent, were measured in the frequency domain using a modern bridge with a frequency range of from 30 Hz to 300 kHz. The results of changes in loss tangent for the ethylene methyl acrylate copolymer are given. Changes in mechanical properties were followed by tensile tests and stress relaxation at a constant value of strain which varied between 60 and 75%, of strain at break, depending on the materials. The materials were examined by both TGA (thermo-gravimetric analysis) and DTA (differential thermal analysis).<<ETX>>

  • Structure of the U-band in neutron irradiated MOVPE grown N-GaAs epilayers

    DLTS measurements of neutron irradiated MOVPE-GaAs as a function of applied field and various neutron fluences have revealed considerable structure to the previously observed broad U-band. Curve fitting procedures have been used to separate the U-band into four distinct trapping levels with characteristics consistent with those of point defects.<<ETX>>



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