Conferences related to Nanotopography

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2020 42nd Annual International Conference of the IEEE Engineering in Medicine & Biology Society (EMBC)

The conference program will consist of plenary lectures, symposia, workshops and invitedsessions of the latest significant findings and developments in all the major fields of biomedical engineering.Submitted papers will be peer reviewed. Accepted high quality papers will be presented in oral and postersessions, will appear in the Conference Proceedings and will be indexed in PubMed/MEDLINE


2019 IEEE SENSORS

The IEEE Sensors Conference is a forum for presentation, discussion, and exchange of state-of-the art information including the latest research and development in sensors and their related fields. It brings together researchers, developers, and practitioners from diverse fields including international scientists and engineers from academia, research institutes, and companies to present and discuss the latest results in the general field of sensors.

  • 2002 IEEE Sensors

  • 2003 IEEE Sensors

  • 2004 IEEE Sensors

  • 2005 IEEE Sensors

  • 2006 IEEE Sensors

  • 2007 IEEE Sensors

    IEEE SENSORS 2007 solicits original and state-of-the-art contributions to sensors and related topics, covering from theory to application, from device to system, from modeling to implementation, and from macro to micro/nano in scale.

  • 2008 IEEE Sensors

    IEEE SENSORS 2008 solicits original and state-of-the-art contributions to sensors and related topics, covering from theory to application, from device to system, from modeling to implementation, and from macro to micro/nano in scale. Topics of interest include,but are not limitid to: Phenomena, Modeling, and Evaluation (Novel Sensing Principles, Theory and Modeling, Sensors Characterization, Evaluation and Testing, Data Handling and Mining) Chemical and Gas Sensors (Materials, Devices, Electronics N

  • 2009 IEEE Sensors

    IEEE Sensors Conference 2009 is intended to provide a common forum for researchers, scientists, engineers and practitioners throughout the world to present their latest research findings, ideas, developments and applications in the area of sensors and sensing technology. IEEE Sensors Conference 2009 will include keynote addresses by eminent scientists as well as special, regular and poster sessions.

  • 2010 IEEE Sensors

    The IEEE SENSORS 2010 Conference is a forum for state-of-the-art presentations on sensors and related topics covering from theory to application, device to system, modeling to implementation and from macro/nano to scale.

  • 2011 IEEE Sensors

    The IEEE Sensors Conference is a forum for presentation, discussion, and exchange of state-of-the art information including the latest research and development in sensors and their related fields. It brings together researchers, developers, and practitioners from diverse fields including international scientists and engineers from academia, research institutes, and companies to present and discuss the latest results in the general field of sensors. IEEE SENSORS 2011 will include keynote addresses by eminen

  • 2012 IEEE Sensors

    The IEEE Sensors Conference is a forum for presentation, discussion, and exchange of state-of-the art information including the latest research and development in sensors and their related fields. It brings together researchers, developers, and practitioners from diverse fields including international scientists and engineers from academia, research institutes, and companies to present and discuss the latest results in the general field of sensors.

  • 2013 IEEE Sensors

    The IEEE SENSORS Conference is a forum for presentation, discussion, and exchange of state -of-the art information including the latest research and development in sensors and their related fields. It brings together researchers, developers, and practitioners from diverse fields including international scientists and engineers from academia, research institutes, and companies to present and discuss the latest results in the general field of sensors.

  • 2014 IEEE Sensors

    The IEEE Sensors Conference is a forum for presentation, discussion, andexchange of state -of-the art information including the latest research and development in sensors andtheir related fields. It brings together researchers, developers, and practitioners from diverse fieldsincluding international scientists and engineers from academia, research institutes, and companies topresent and discuss the latest results in the general field of sensors.

  • 2015 IEEE Sensors

    The IEEE Sensors Conference is a forum for presentation, discussion, and exchange of state -of-the art information including the latest research and development in sensors and their related fields. It brings together researchers, developers, and practitioners from diverse fieldsincluding international scientists and engineers from academia, research institutes, and companies topresent and discuss the latest results in the general field of sensors.

  • 2016 IEEE Sensors

    The IEEE Sensors Conference is a forum for presentation, discussion, and exchange of state -of-the art information including the latest research and development in sensors and their related fields. It brings together researchers, developers, and practitioners from diverse fields including international scientists and engineers from academia, research institutes, and companies to present and discuss the latest results in the general field of sensors.

  • 2017 IEEE SENSORS

    The IEEE Sensors Conference is a forum for presentation, discussion, and exchange of state -of-the art information including the latest research and development in sensors and their relatedfields. It brings together researchers, developers, and practitioners from diverse fields includinginternational scientists and engineers from academia, research institutes, and companies topresent and discuss the latest results in the general field of sensors.

  • 2018 IEEE SENSORS

    The IEEE Sensors Conference is a forum for presentation, discussion, and exchange of state -of-the art information including the latest research and development in sensors and their relatedfields. It brings together researchers, developers, and practitioners from diverse fields includinginternational scientists and engineers from academia, research institutes, and companies topresent and discuss the latest results in the general field of sensors.


2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)

The world's premiere conference in MEMS sensors, actuators and integrated micro and nano systems welcomes you to attend this four-day event showcasing major technological, scientific and commercial breakthroughs in mechanical, optical, chemical and biological devices and systems using micro and nanotechnology.The major areas of activity in the development of Transducers solicited and expected at this conference include but are not limited to: Bio, Medical, Chemical, and Micro Total Analysis Systems Fabrication and Packaging Mechanical and Physical Sensors Materials and Characterization Design, Simulation and Theory Actuators Optical MEMS RF MEMS Nanotechnology Energy and Power


2018 Northwest Energy System Symposium (NWESS)

The intent of the 2018 Northwest Energy System Symposium is to provide a 2-day program to educate engineers, system operators, system planners, regulators energy consultants and others about emerging technologies that are transforming the utility energy systems. This 2-day conference is put on by area utilities, universities, consultants and manufacturers provides participants information and examples on technologies, issues and best practices affecting energy utilities and their customers.


2018 IEEE 13th Annual International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)

The IEEE-NEMS is a premier conference series sponsored by the IEEE Nanotechnology Council focusing on the promotion of advanced research areas related to MEMS, nanotechnology, and molecular technology. Prior conferences were held in Los Angeles (USA,2017), Matsushima Bay and Sendai (Japan, 2016), Xian (China, 2015), Hawaii (USA, 2014), Suzhou (China, 2013), Kyoto (Japan, 2012), Kaohsiung (Taiwan, 2011), Xiamen (China, 2010), Shenzhen (China, 2009), Hainan Island (China, 2008), Bangkok (Thailand, 2007), and Zhuhai (China, 2006). The IEEE-NEMS Conference typically attracts over 600 attendees with participants from more than 20 countries and regions worldwide.



Periodicals related to Nanotopography

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Instrumentation and Measurement, IEEE Transactions on

Measurements and instrumentation utilizing electrical and electronic techniques.


Magnetics, IEEE Transactions on

Science and technology related to the basic physics and engineering of magnetism, magnetic materials, applied magnetics, magnetic devices, and magnetic data storage. The Transactions publishes scholarly articles of archival value as well as tutorial expositions and critical reviews of classical subjects and topics of current interest.


Microelectromechanical Systems, Journal of

A journal covering Microsensing, Microactuation, Micromechanics, Microdynamics, and Microelectromechanical Systems (MEMS). Contains articles on devices with dimensions that typically range from macrometers to millimeters, microfabrication techniques, microphenomena; microbearings, and microsystems; theoretical, computational, modeling and control results; new materials and designs; tribology; microtelemanipulation; and applications to biomedical engineering, optics, fluidics, etc. The Journal is jointly sponsored by the IEEE Electron Devices ...


Nanobioscience, IEEE Transactions on

Basic and applied papers dealing both with engineering, physics, chemistry, and computer science and with biology and medicine with respect to bio-molecules and cells. The content of acceptable papers ranges from practical/clinical/environmental applications to formalized mathematical theory. TAB #73-June 2001. (Original name-IEEE Transactions on Molecular Cellular and Tissue Engineering). T-NB publishes basic and applied research papers dealing with the study ...


Semiconductor Manufacturing, IEEE Transactions on

Addresses innovations of interest to the integrated circuit manufacturing researcher and professional. Includes advanced process control, equipment modeling and control, yield analysis and optimization, defect control, and manufacturability improvement. It also addresses factory modelling and simulation, production planning and scheduling, as well as environmental issues in semiconductor manufacturing.



Most published Xplore authors for Nanotopography

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Xplore Articles related to Nanotopography

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Nanotopography Imaging using a Heated Microcantilever in Tapping Mode

TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference, 2007

This paper describes tapping mode atomic force microscopy (AFM) using a heated AFM cantilever. Electrical and thermal characterization of the cantilever reveals that the cantilever is in thermal steady state in resonance oscillation, because its thermal time constant, around 300 μs, is much slower than the oscillation frequency of 70.36 kHz. Topographical imaging was performed on silicon calibration gratings of ...


Microreplicated CMP pad for RMG and MOL metallization

2017 IEEE International Interconnect Technology Conference (IITC), 2017

Microreplicated CMP pad is applied to W and Co buff CMP steps for topography and WiDNU reduction of RMG and MOL metallization. This new pad exhibits stable rates and low defectivity over extended life time without the need for diamond conditioner. It also demonstrates reduction in topography built-up at device level and die level, leading to remarkable reduction in topo-related ...


Distortion of f-actin and focal contacts of animal cells upon ordered nanotopography

Proceedings of the IEEE-EMBS Special Topic Conference on Molecular, Cellular and Tissue Engineering, 2002

Animal cells live in a complex and diverse environment where they encounter a vast amount of information. Surface topography that a cell encounters has a role to play in influencing cell behaviour. It has been demonstrated widely that surface shape can directly influence the behaviour of cells. In this paper we discuss the interactions of animal cells with engineered nanotopography ...


Six-fold improvement in nanotopography sensing via temperature control of a heated atomic force microscope cantilever

SENSORS, 2010 IEEE, 2010

Heated atomic force microscope (AFM) cantilevers can be used to thermally sense the nanotopography of a surface. Previous reports show that cantilever nanotopography sensitivity can be increased by either modifying the cantilever design or by increasing the operating temperature of the cantilever. This article describes six-fold improvement to cantilever sensitivity by using control mechanisms to maintain either constant cantilever electrical ...


Yield impact of cross-field and cross-wafer CD spatial uniformity: collapse of the deep-UV and 193 nm lithographic focus window

1999 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings (Cat No.99CH36314), 1999

The 0.13 /spl mu/m semiconductor manufacturing generation, shipping as early as 2001, will have transistor gate structures as small as 100 nm, creating a demand for sub-10 nm gate linewidth control. Linewidth variation consists of cross-chip, cross-wafer, cross-lot, and run-to-run components. In this work, we explore spatial dependencies across the lithographic field due to reticle error and across the wafer ...



Educational Resources on Nanotopography

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IEEE.tv Videos

No IEEE.tv Videos are currently tagged "Nanotopography"

IEEE-USA E-Books

  • Nanotopography Imaging using a Heated Microcantilever in Tapping Mode

    This paper describes tapping mode atomic force microscopy (AFM) using a heated AFM cantilever. Electrical and thermal characterization of the cantilever reveals that the cantilever is in thermal steady state in resonance oscillation, because its thermal time constant, around 300 μs, is much slower than the oscillation frequency of 70.36 kHz. Topographical imaging was performed on silicon calibration gratings of height 20 and 100 nm. The obtained topography sensitivity is as high as 200 μV/nm and the resolution is as good as 0.5 nm/Hz½. As in conventional AFM, the tapping mode operation demonstrated here can suppress imaging artifacts and enable imaging of soft samples.

  • Microreplicated CMP pad for RMG and MOL metallization

    Microreplicated CMP pad is applied to W and Co buff CMP steps for topography and WiDNU reduction of RMG and MOL metallization. This new pad exhibits stable rates and low defectivity over extended life time without the need for diamond conditioner. It also demonstrates reduction in topography built-up at device level and die level, leading to remarkable reduction in topo-related defects for MOL local interconnects.

  • Distortion of f-actin and focal contacts of animal cells upon ordered nanotopography

    Animal cells live in a complex and diverse environment where they encounter a vast amount of information. Surface topography that a cell encounters has a role to play in influencing cell behaviour. It has been demonstrated widely that surface shape can directly influence the behaviour of cells. In this paper we discuss the interactions of animal cells with engineered nanotopography fabricated in quartz and reverse embossed into polycaprolactone. Epithelial, fibroblast, and macrophage like cells all show reduced adhesion, to the ordered nano pits and pillars. Here we show that the area of cell spreading upon the nanotopography is reduced compared to that of planar substrate. Furthermore, cytoskeletal organisation is disrupted by way of reduced numbers and organisation of the focal adhesions of the cell populations encountering ordered nanostructured surfaces.

  • Six-fold improvement in nanotopography sensing via temperature control of a heated atomic force microscope cantilever

    Heated atomic force microscope (AFM) cantilevers can be used to thermally sense the nanotopography of a surface. Previous reports show that cantilever nanotopography sensitivity can be increased by either modifying the cantilever design or by increasing the operating temperature of the cantilever. This article describes six-fold improvement to cantilever sensitivity by using control mechanisms to maintain either constant cantilever electrical resistance, cantilever dissipated power, or the voltage across the circuit. Topographical imaging was performed on a 20 nm tall silicon calibration grating under each of these control schemes. The topographies obtained by the laser-deflection and the thermal signal corresponding to each control mechanism were compared. The thermal nanotopography sensitivity is improved by as much as 570% by controlling cantilever resistance and 345% by controlling power supply to the cantilever. Overall, the topography sensitivity using heated cantilevers is 500 times greater than that using similarly sized piezoresistive cantilevers.

  • Yield impact of cross-field and cross-wafer CD spatial uniformity: collapse of the deep-UV and 193 nm lithographic focus window

    The 0.13 /spl mu/m semiconductor manufacturing generation, shipping as early as 2001, will have transistor gate structures as small as 100 nm, creating a demand for sub-10 nm gate linewidth control. Linewidth variation consists of cross-chip, cross-wafer, cross-lot, and run-to-run components. In this work, we explore spatial dependencies across the lithographic field due to reticle error and across the wafer due to wafer and chuck nanotopography. Both sources of spatial variation can cause collapse of the lithographic focus window near the limits of resolution, resulting in CD excursions for gate structures in high-performance microprocessors. Our work supports the contention that photolithography-induced defects may become the primary source of yield loss for the 0.13 /spl mu/m generation and beyond.

  • Tutorial on the biology of nanotopography

    The aims of this short tutorial are fourfold: 1) to introduce readers unfamiliar with the field to major concepts in the field; 2) to inform the reader of major unresolved questions; 3) to inform readers of a few major sources of relevant literature; and 4) to place the subject in relation to its relevance to other areas of science and practical application.

  • 3D fabrication methods for producing tissue engineering scaffolds

    A new method for preparing 3D scaffolds for tissue engineering applications with highly controlled micro and nanotopography have been developed. A combination of UV and electron beam lithography was employed for master fabrication and nanoimprint lithography for the preparation of the 3D polymeric scaffolds.

  • Multilayer microcantilever heater-thermometer with improved thermal resistance for nanotopography measurements

    This paper reports the design, fabrication, and testing of a multilayer cantilever structure having a doped silicon heater-thermometer separated from the silicon cantilever legs by a thermally insulating silicon nitride layer. The multilayer microcantilever can be heated above 600°C. Highly sensitive thermal topography measurements were successfully demonstrated on a 20 nm tall silicon grating. The thermal topography results agree well with the conventional laser deflection measurements. We achieved a thermal topography reading sensitivity of 1.3 × 10<sup>-4</sup> nm<sup>-1</sup> and a thermal topography resolution of 6.9 pm/¿Hz. This compares well to published data on other types of cantilevers.

  • Effect of nanotopography in direct wafer bonding: modeling and measurements

    Nanotopography, which refers to surface height variations of tens to hundreds of nanometers that extend across millimeter-scale wavelengths, is a wafer geometry feature that may cause failure in direct wafer bonding processes. In this work, the nanotopography that is acceptable in direct bonding is determined using mechanics-based models that compare the elastic strain energy accumulated in the wafer during bonding to the work of adhesion. The modeling results are presented in the form of design maps that show acceptable magnitudes of height variations as a function of spatial wavelength. The influence of nanotopography in the bonding of prime grade silicon wafers is then assessed through a combination of measurements and analysis. Nanotopography measurements on three 150-mm silicon wafers, which were manufactured using different polishing processes, are reported and analyzed. Several different strategies are used to compare the wafers in terms of bondability and to assess the impact of the measured nanotopography in direct bonding. The measurement and analysis techniques reported here provide a general route for assessing the impact of nanotopography in direct bonding and can be employed when evaluating different processes to manufacture wafers for bonded devices or substrates.

  • Full wafer nanotopography analysis on rough surfaces using stitched white light interferometry images

    Feature sizes of transistors manufactured on silicon wafers in high volume reached 22 nm and will further decrease in the future. Superior wafer surface quality is mandatory to produce such small feature sizes. One relevant quality parameter is the nanotopography of the wafers surface. Applying dedicated state-of-the-art metrology systems, nanotopography is characterized end-of- line of wafer manufacturing on wafers with specular reflectance. In order to continuously improve wafer quality and identify nanotopography related features early, a measurement system capable of characterizing rough wafer surfaces is required. This paper presents a NT analysis approach using a white light interferometer (WLI) with a field of view of 85 × 85 mm2. An optimized stitching algorithm merges 16 individual WLI measurements to a height map of an entire 300 mm wafer. Nanotopography can be extracted at wafer edge exclusion below 1 mm by applying flexible Gaussian high-pass filters. A mathematical analysis of nanotopography characteristics according to SEMI M43 is implemented. Gauge repeatability and reproducibility studies provided standard deviations of less than 1 nm on wafer surfaces as-ground by using threshold height analysis (THA). This proves the measurement system's capability for nanotopography analysis at early states of wafer manufacturing, which in turn can support improving wafer surface quality.



Standards related to Nanotopography

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No standards are currently tagged "Nanotopography"