206 resources related to Molecular beams
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IEEE International Conference on Plasma Science (ICOPS) is an annual conference coordinated by the Plasma Science and Application Committee (PSAC) of the IEEE Nuclear & Plasma Sciences Society.
INTERMAG is the premier conference on all aspects of applied magnetism and provides a range of oral and poster presentations, invited talks and symposia, a tutorial session, and exhibits reviewing the latest developments in magnetism.
2020 IEEE Photovoltaic Specialists Conference (PVSC)
Promote science and engineering of photovoltaic materials, devices, systems and applications
2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)
Ferroelectric materials and applications
The Optical Fiber Communication Conference and Exhibition (OFC) is the largest global conference and exhibition for optical communications and networking professionals. For over 40 years, OFC has drawn attendees from all corners of the globe to meet and greet, teach and learn, make connections and move business forward.OFC attracts the biggest names in the field, offers key networking and partnering opportunities, and provides insights and inspiration on the major trends and technology advances affecting the industry. From technical presentations to the latest market trends and predictions, OFC is a one-stop-shop.
Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission
Broad coverage of concepts and methods of the physical and engineering sciences applied in biology and medicine, ranging from formalized mathematical theory through experimental science and technological development to practical clinical applications.
Electrical insulation common to the design and construction of components and equipment for use in electric and electronic circuits and distribution systems at all frequencies.
Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
16th Annual Symposium on Frequency Control, 1962
15th Annual Symposium on Frequency Control, 1961
IEEE Microwave and Guided Wave Letters, 1995
The use of a molecular beam epitaxy engineered InGaAs/GaAs semiconductor structure to quasioptically modulate a millimeter wave Gaussian beam using an optical control signal has been demonstrated. The RF transmission is modulated spatially by the optically generated excess carrier density. Low optical intensities are sufficient due to the long recombination lifetime achieved in the nipi-doped structure used. A modulation depth ...
22nd Annual Symposium on Frequency Control, 1968
IEEE Transactions on Nuclear Science, 1977
A new technique for injecting an ion beam into a storage ring is presented. The idea arose in conection with high energy ion beam fusion where a large degree of transverse stacking in both planes would otherwise be necessary. The method involves accelerating a molecular ion such as HI+but storing the atcnic ion I+by photodissociating the molecule at injection. The ...
EMBC 2011-Program-Systems in Synthetic Biology (Part I)-Bruce Tidor
Transceiver Systems for mmWave Application - Mats Carlsson - RFIC Showcase 2018
Part Two: Interview with John Tisdale—IEEE VIC Summit 2018
Molecular Diagnostics for STIs - Gary Schoolnik - IEEE EMBS at NIH, 2019
Electric-field Bit Write-in for Molecular Quantum-dot Cellular Automata - Enrique Blair - ICRC 2018
IEEE Brain: Understanding Early Stage Investors
Part 1: Interview with John Tisdale—IEEE VIC Summit 2018
Robotics History: Narratives and Networks Oral Histories: Richard Murray
APEC 2011- Methode Electronics at APEC 2011
Q&A with Jo Jo Platt, IEEE Brain Podcast, Episode 14
EMBC 2011-Keynote Lectures and Panel Discussion-PT I-Subra Suresh
ICASSP 2010 - Advances in Neural Engineering
Unmet Needs for POC Technology: HIV/AIDS - Ronald Collman - IEEE EMBS at NIH, 2019
Implantable, Insertable and Wearable Micro-optical Devices for Early Detection of Cancer - Plenary Speaker, Christopher Contag - IPC 2018
POC AAT-based Diagnostic Technology - Paul Yager - IEEE EMBS at NIH, 2019
IMS 2015: Chris Walker - John Tucker Special Tribute - SuperCam: A 64 Pixel SIS Receiver Array for Submillimeter-wave Astronomy
Synthetic Biology: Gene Editing’s Role in Diagnostics - Andrew Ellington - IEEE EMBS at NIH, 2019
Unmet Needs in the Diagnosis and Management of TB - Richard Chaisson - IEEE EMBS at NIH, 2019
Long & Winding Road From Technology to Products - Keynote David Alland - IEEE EMBS at NIH, 2019
The use of a molecular beam epitaxy engineered InGaAs/GaAs semiconductor structure to quasioptically modulate a millimeter wave Gaussian beam using an optical control signal has been demonstrated. The RF transmission is modulated spatially by the optically generated excess carrier density. Low optical intensities are sufficient due to the long recombination lifetime achieved in the nipi-doped structure used. A modulation depth of more than 15 dB in transmission mode has been obtained at 100 GHz. Modulation has been measured up to 5 THz using a Fourier transform spectrometer.<<ETX>>
A new technique for injecting an ion beam into a storage ring is presented. The idea arose in conection with high energy ion beam fusion where a large degree of transverse stacking in both planes would otherwise be necessary. The method involves accelerating a molecular ion such as HI+but storing the atcnic ion I+by photodissociating the molecule at injection. The irreversibility of the reaction γ+HI+→Ho+I+renders irrelevant Liouville's theorem, which, with standard injection, would prevent new beam fran being injected into the same space as already circulating beam. Xenon flashlamp and ruby laser system for acccxplishing mlecular ion dissociation (MID) are described.
One of the great challenges for science will be in structural biology, and in particular in the structural determination of single molecules. Worldwide, there is a major research effort, mostly concentrated around synchrotrons, on molecular imaging. Recently Canadian groups have developed perspectives for imaging based on the combination of major advances in ultrafast measurements and in molecular imaging. As a result, we are establishing a Canadian based International Research Facility that will explore a completely new approach to dynamic investigation of matter. The National facility, called the Advanced Laser Light Source (ALLS), will enable the combination of any or all of the most advanced laser technologies for exploiting light-matter interactions
The creation of shallow junctions in the semiconductor industry is a crucial step for future devices. Conventional implanters have difficulties producing ion beams below 50 keV. Advanced silicon processing requires equivalent B energies below 1 keV. There are a number of potential ways of obtaining these low energy beams. The use of molecular species has been employed for several years and recently low energy implanters adopting a de-acceleration stage have become available. We look here at the potential differences that might occur by adopting the different molecular species or by using a low energy boron beam. The difference between these occurring because of the vast difference in the energy density of the impacting particle. The low energy B ion will arrive with little energy but the larger BF/sub 2/ and B/sub 10/H/sub 14/ ions arrive with as much as 10 times the energy, all of which is deposited in a similar volume of the target. This can lead to a loss of boron from the surface.
We have demonstrated a novel type of matter-wave interferometer which is designed for particles with wavelengths down to 0.5 pm. Such a short wavelength corresponds for instance to a mass of 7000 atomic mass units (amu) at a velocity of 100m/s.
A plasma mixing device in which a helium plasma beam is crossed with a molecular fluorine beam was used to operate an atomic fluorine laser. Operation conditions confirm that excitation occurs through collisions of helium metastables and F/sub 2/ molecules. Collisions with other F-donors, such as NF/sub 3/, CF/sub 4/, C/sub 2/F/sub 6/, and SF/sub 6/, do not yield F-atoms in one of the possible upper laser levels. In lasers using such F-donors, excitation has to occur through electron collisions with F-atoms which have been generated in a preceding process.<<ETX>>
High dopant activation and low implant damage are crucial in realizing the formation of a low resistivity ultra shallow junction (USJ). Future annealing process requires diffusion less activation and has ultimately define the junction depth. Conventional boron implant at ultra-low energies perform poorly in throughput and in energy contamination. Molecular species (B<sub>18</sub>H<sub>22</sub>) can provide implants with no energy contamination and low beam divergence along with self-amorphization. Implantation of ClusterBoron in combination with ClusterCarbon can provide junction depths in the 15-20 nm regime and achieve a higher level of dopant activation with conventional spike anneal. We used various ClusterBoron and ClusterCarbon energies and doses along with various anneal techniques to arrive at an optimum resistivity and junction depth for PMOS SDE applications. We carried out various analytical measurements like SIMS, sheet-resistance to understand the self-amorphization, enhanced dopant activation and the damage level effect of the dopants after the anneals. The results are discussed in detail in the paper
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