Conferences related to Microelectronic implants

Back to Top

2020 IEEE International Symposium on Antennas and Propagation and North American Radio Science Meeting

The joint meeting is intended to provide an international forum for the exchange of information on state of the art research in the area of antennas and propagation, electromagnetic engineering and radio science


2020 42nd Annual International Conference of the IEEE Engineering in Medicine & Biology Society (EMBC)

The conference program will consist of plenary lectures, symposia, workshops and invitedsessions of the latest significant findings and developments in all the major fields of biomedical engineering.Submitted papers will be peer reviewed. Accepted high quality papers will be presented in oral and postersessions, will appear in the Conference Proceedings and will be indexed in PubMed/MEDLINE


2020 IEEE 70th Electronic Components and Technology Conference (ECTC)

ECTC is the premier international conference sponsored by the IEEE Components, Packaging and Manufacturing Society. ECTC paper comprise a wide spectrum of topics, including 3D packaging, electronic components, materials, assembly, interconnections, device and system packaging, optoelectronics, reliability, and simulation.


2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2020 IEEE International Solid- State Circuits Conference - (ISSCC)

ISSCC is the foremost global forum for solid-state circuits and systems-on-a-chip. The Conference offers 5 days of technical papers and educational events related to integrated circuits, including analog, digital, data converters, memory, RF, communications, imagers, medical and MEMS ICs.


More Conferences

Periodicals related to Microelectronic implants

Back to Top

Antennas and Propagation, IEEE Transactions on

Experimental and theoretical advances in antennas including design and development, and in the propagation of electromagnetic waves including scattering, diffraction and interaction with continuous media; and applications pertinent to antennas and propagation, such as remote sensing, applied optics, and millimeter and submillimeter wave techniques.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Biomedical Circuits and Systems, IEEE Transactions on

The Transactions on Biomedical Circuits and Systems addresses areas at the crossroads of Circuits and Systems and Life Sciences. The main emphasis is on microelectronic issues in a wide range of applications found in life sciences, physical sciences and engineering. The primary goal of the journal is to bridge the unique scientific and technical activities of the Circuits and Systems ...


Biomedical Engineering, IEEE Transactions on

Broad coverage of concepts and methods of the physical and engineering sciences applied in biology and medicine, ranging from formalized mathematical theory through experimental science and technological development to practical clinical applications.


Circuits and Systems II: Express Briefs, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


More Periodicals

Most published Xplore authors for Microelectronic implants

Back to Top

Xplore Articles related to Microelectronic implants

Back to Top

Effect of F on B penetration through gate oxide for BF/sub 2/ implants used to obtain ultra-shallow junctions by RTA

Proceedings of 11th International Conference on Ion Implantation Technology, 1996

We have studied enhancement of B penetration due to the presence of F, when BF/sub 2/ implants are used for s/d extension implants in p/sup +/ poly gate PMOS devices. A 0.35 /spl mu/m CMOS full flow is used to characterize the change in linear and saturation threshold voltage due to increased B penetration. The effect of F on other ...


Microelectronic components for a retina implant system

Proceedings of the 25th European Solid-State Circuits Conference, 1999

This work describes the architecture and realisation of microelectronic components for a retina implant system that will provide visual sensations to patients suffering from photoreceptor degeneration. Special camera circuitry has been developed for a high dynamic range of more than seven decades of optical resolution corresponding to the performance of the human eye. This image is converted into receptive field ...


A study of antimony or arsenic implanted extensions with or without xenon pre-amorphization

The Fourth International Workshop on Junction Technology, 2004. IWJT '04., 2004

We present in this paper a detailed analysis of the electrical behavior of NMOS transistors where the source/drain extensions (SDE) were doped either by As, Xe pre-amorphizing implant (PAI) + As, Sb or Xe PAI + Sb. The Sb splits show better threshold voltage characteristics in comparison with As: delayed Vt rolldown, reduced Short Channel Effect (SCE) and Drain Induced ...


Characterisation of Heterojunction Bipolar Transistors incorporating Si/Si<inf>1-x</inf>Ge<inf>x</inf> epitaxial double layers with n<sup>+</sup> emitter implants

ESSDERC '92: 22nd European Solid State Device Research conference, 1992

Transistors fabricated with systematic variations in Ge fraction, base doping and junction spacer width show near-ideal electrical characteristics. Emitter implantation generates anomalous boron diffusion in the base.


Improved Shallow Trench Isolation For Sub-Halfmicron CMOS

ESSDERC '91: 21st European Solid State Device Research Conference, 1991

This paper presents new results on shallow trench isolation with the use of tilted field implants for avoiding the field parasitic transistors. Isolation results and gate oxide breakdown voltage are presented and discussed. The fabrication of 0.7 ¿m DLM 16K SRAMs with this type of isolation has been demonstrated with results similar to standard isolation circuits.


More Xplore Articles

Educational Resources on Microelectronic implants

Back to Top

IEEE-USA E-Books

  • Effect of F on B penetration through gate oxide for BF/sub 2/ implants used to obtain ultra-shallow junctions by RTA

    We have studied enhancement of B penetration due to the presence of F, when BF/sub 2/ implants are used for s/d extension implants in p/sup +/ poly gate PMOS devices. A 0.35 /spl mu/m CMOS full flow is used to characterize the change in linear and saturation threshold voltage due to increased B penetration. The effect of F on other device characteristics is also examined. Contrary to previous concerns, it is found that the threshold voltage shift is quite small (18 mV) for the realistic conditions studied (2/spl times/10/sup 14/ cm/sup -2/ or BF/sub 2/ dose). The presence of F does not degrade other electrical characteristics such as leakage current, sub-threshold slope or transconductance.

  • Microelectronic components for a retina implant system

    This work describes the architecture and realisation of microelectronic components for a retina implant system that will provide visual sensations to patients suffering from photoreceptor degeneration. Special camera circuitry has been developed for a high dynamic range of more than seven decades of optical resolution corresponding to the performance of the human eye. This image is converted into receptive field data for generation of the stimulation data. The former components are located outside of the eye and are wireless linked to an implanted flexible silicon multielectrode stimulator inside the eye, which generates electrical signals for electrostimulation of the retina. The image sensor and the implantable power and data receiver as well as the stimulator have been fabricated using standard CMOS-technology.

  • A study of antimony or arsenic implanted extensions with or without xenon pre-amorphization

    We present in this paper a detailed analysis of the electrical behavior of NMOS transistors where the source/drain extensions (SDE) were doped either by As, Xe pre-amorphizing implant (PAI) + As, Sb or Xe PAI + Sb. The Sb splits show better threshold voltage characteristics in comparison with As: delayed Vt rolldown, reduced Short Channel Effect (SCE) and Drain Induced Barrier Lowering (DIBL). Moreover, the I/sub on//I/sub off/ trade-off analysis reveals that more than 10% improvement in the performance can be obtained with Sb compared to the As reference that is due to a reduction in the access resistance R/sub access/. This makes Sb a very promising candidate for N-type Ultra-Shallow Junctions (USJ) for future CMOS generations. Xe PAI induces excellent sub-threshold characteristics due to the lowering of the junction depth Xj; however the I/sub on/ is dramatically reduced in this case because of much higher R/sub access/.

  • Characterisation of Heterojunction Bipolar Transistors incorporating Si/Si<inf>1-x</inf>Ge<inf>x</inf> epitaxial double layers with n<sup>+</sup> emitter implants

    Transistors fabricated with systematic variations in Ge fraction, base doping and junction spacer width show near-ideal electrical characteristics. Emitter implantation generates anomalous boron diffusion in the base.

  • Improved Shallow Trench Isolation For Sub-Halfmicron CMOS

    This paper presents new results on shallow trench isolation with the use of tilted field implants for avoiding the field parasitic transistors. Isolation results and gate oxide breakdown voltage are presented and discussed. The fabrication of 0.7 ¿m DLM 16K SRAMs with this type of isolation has been demonstrated with results similar to standard isolation circuits.

  • The effect of implant dose rates and two step anneals on p/sup +/-n ultra-shallow junctions

    Ultra-shallow junctions are obtained using low energy BF/sub 2/ (5 keV) implants in crystalline Si. The variation in junction depth as a function of dose rate and two-step anneals is studied for doses of 1/spl times/10/sup 14/ and 1/spl times/10/sup 15/ cm/sup -2/. B diffusion is retarded in the tail region for the higher dose rates and consequently the junction depth decreases as compared to the lower dose rates. Junction depth is further reduced for the two-step anneals as compared to the single-step RTA.

  • Single chip CMOS image sensors for a retina implant system

    This work describes the architecture and realization of microelectronic components for a retina implant system that will provide visual sensations to patients with photoreceptor degeneration by applying electrostimulation of the intact retinal ganglion cell layer. Special circuitry has been developed for a fast single-chip CMOS image sensor system which provides high dynamic range of more than seven decades (without a mechanical shutter) corresponding to the performance of the human eye. This image sensor system is directly attachable to a digital filter and a signal processor that compute the so-called receptive-field function for generation of the stimulation data. These external components are wireless linked to an implanted flexible silicon multielectrode stimulator which generates electrical signals for electrostimulation of the intact ganglion cells. All components, including additional hardware for digital signal processing and wireless data and power transmission have been developed for fabrication using our in-house standard CMOS-technology.

  • Investigation of channeling in field oxide corners by three-dimensional Monte Carlo simulation of ion implantation

    The effects of channeling of source/drain (S/D) implants in field oxide corners are investigated by three-dimensional Monte Carlo simulation of ion implantation. The simulations were carried out for conventional LOCOS and for poly-buffered LOCOS, assuming idealized field oxide geometries. The results of amorphous mode and crystalline mode simulations were compared. For poly- buffered LOCOS we found that due to channeling the bend radius of the isometric surfaces of the dopant concentration is significantly decreased in the field oxide corner even when using a 7/spl deg/ tilt angle for dechanneling. This may result in a reduced breakdown voltage of S/D-to-well diodes.

  • On-chip spiral inductors with diffused shields using channel-stop implant

    We investigated the Diffused shield Under the Oxide (DUO) for the first time. DUO is an extremely shallow diffusion layer in the n-well under the field oxide. DUO can be formed by high energy implantation through the field oxide, and it can be formed by the process of the channel stop implant for MOSFETs simultaneously. Application of DUO provided a 79% improvement in Q-factor and the comparable shield effect on the n-well. This structure is one of the suitable ground shield for the spiral inductor of the rf CMOS.

  • Improvement of device characteristics by multiple step implants or introducing a C gettering layer

    Ion implantation is used for realization of the collector in vertical bipolar transistors in a BiCMOS process. Secondary defects, remaining after annealing the implant damage, can give rise to an increased leakage current and to collector-emitter shorts. Two methods are proposed to avoid dislocation formation. First, by using multiple step implants, and second, by application of a carbon gettering layer. Experimental results show that these schemes can lower leakage currents, and moreover dramatically increase device yield. However, the carbon profile needs a further optimization with respect to the quality of the collector-substrate junction.



Standards related to Microelectronic implants

Back to Top

No standards are currently tagged "Microelectronic implants"


Jobs related to Microelectronic implants

Back to Top