Conferences related to Metallic superlattices

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2020 IEEE 70th Electronic Components and Technology Conference (ECTC)

ECTC is the premier international conference sponsored by the IEEE Components, Packaging and Manufacturing Society. ECTC paper comprise a wide spectrum of topics, including 3D packaging, electronic components, materials, assembly, interconnections, device and system packaging, optoelectronics, reliability, and simulation.


2020 IEEE International Magnetic Conference (INTERMAG)

INTERMAG is the premier conference on all aspects of applied magnetism and provides a range of oral and poster presentations, invited talks and symposia, a tutorial session, and exhibits reviewing the latest developments in magnetism.


2020 IEEE Photovoltaic Specialists Conference (PVSC)

Promote science and engineering of photovoltaic materials, devices, systems and applications


2019 Compound Semiconductor Week (CSW)

CSW2019 covers all aspects of compound semiconductors – including growth, processing, devices, physics, spintronics, quantum information, MEMS/NEMS, sensors, solar cells, and novel applications. The conference deals with III-V compounds such as GaAs, InP, and GaN; II-VI compounds such as ZnSe and ZnS; carbon related materials; oxide semiconductors; organic semiconductors etc.


2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)

CLEO®/Europe will showcase the latest developments in a wide range of laser and photonics areas including laser source development, materials, ultrafast science, fibre optics, nonlinear optics, terahertz sources, high-field physics, optical telecommunications, nanophotonics, biophotonics.EQEC will feature the fundamentals of quantum optics, quantum information, atom optics, ultrafast optics, nonlinear phenomena and self-organization, plasmonics and metamaterials, fundamental nanooptics, theoretical and computational photonics.


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Periodicals related to Metallic superlattices

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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Magnetics, IEEE Transactions on

Science and technology related to the basic physics and engineering of magnetism, magnetic materials, applied magnetics, magnetic devices, and magnetic data storage. The Transactions publishes scholarly articles of archival value as well as tutorial expositions and critical reviews of classical subjects and topics of current interest.


Photonics Technology Letters, IEEE

Rapid publication of original research relevant to photonics technology. This expanding field emphasizes laser and electro-optic technology, laser physics and systems, applications, and photonic/ lightwave components and applications. The journal offers short, archival publication with minimal delay.


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Most published Xplore authors for Metallic superlattices

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Xplore Articles related to Metallic superlattices

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Low Transparency Current Density and Low Internal Loss of 1060-nm InGaAs Laser With GaAsP–GaAs Superlattices as Strain-Compensated Layer

IEEE Photonics Technology Letters, 2009

In this letter, the strained In0.22Ga0.78As-GaAs single quantum-well lasers grown by metal-organic vapor phase epitaxy were studied. The lasing wavelength of the fabricated InGaAs laser was 1056 nm, whereas the internal loss (alphai) and the transparency current density (Jtr) were 1.78 cm-1and 40.2 A/cm2, respectively. By using the GaAsP-GaAs superlattices as strain-compensated layer, the lasing wavelength was 1052 nm, and ...


Thin film coolers for localized temperature control in optoelectronic integrated circuits

53rd Electronic Components and Technology Conference, 2003. Proceedings., 2003

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Magnetic force microscopy characterization of unusual magnetic coupling in an extraordinarily responsive magnetic material

IEEE Transactions on Magnetics, 2002

Gd/sub 5/(Si/sub 2/Ge/sub 2/) and related compounds with similar (nearly equal Si-to-Ge ratio) composition exhibit large magnetoresponsive properties including a giant magnetocaloric effect, colossal magnetostriction, and giant magnetoresistance near a structural-magnetic phase transition that occurs close to ambient temperature. Magnetic force microscopy (MFM) and vibrating sample magnetometry (VSM) measurements on single-crystal samples of these materials indicate that the easy magnetization ...


MOCVD growth of (Ga/sub 1-x/InAs-GaAs/sub 1-y/Sb/sub y/) superlattices on InP showing type-II emission at wavelengths beyond 2 /spl mu/m

Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors, 1997

We report on (Ga/sub 1-x/In/sub x/As-GaAs/sub 1-y/Sb/sub y/) superlattices grown strain-compensated on (100) InP:Fe substrates using metal organic chemical vapor deposition. Low temperature photoluminescence measurements show a spatially indirect type-II recombination of electrons in the conduction band of the Ga/sub 1-x/In/sub x/As and holes in the valence band of the GaAs/sub 1-y/Sb/sub y/ layers at 2.20 /spl mu/m. Type-II emission ...


Mocvd Selective Growth of Gaas Wires and Dots by Electron Beam Irradiation

Sixth International Conference Metalorganic Vapor Phase Epitaxy, 1992

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Educational Resources on Metallic superlattices

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IEEE-USA E-Books

  • Low Transparency Current Density and Low Internal Loss of 1060-nm InGaAs Laser With GaAsP–GaAs Superlattices as Strain-Compensated Layer

    In this letter, the strained In0.22Ga0.78As-GaAs single quantum-well lasers grown by metal-organic vapor phase epitaxy were studied. The lasing wavelength of the fabricated InGaAs laser was 1056 nm, whereas the internal loss (alphai) and the transparency current density (Jtr) were 1.78 cm-1and 40.2 A/cm2, respectively. By using the GaAsP-GaAs superlattices as strain-compensated layer, the lasing wavelength was 1052 nm, and the alphaiand Jtrcould be reduced to 0.63 cm-1and 39.1 A/cm2, respectively. To the best of our knowledge, the Jtrwas the lowest among the reported InGaAs lasers around 1060 nm.

  • Thin film coolers for localized temperature control in optoelectronic integrated circuits

    None

  • Magnetic force microscopy characterization of unusual magnetic coupling in an extraordinarily responsive magnetic material

    Gd/sub 5/(Si/sub 2/Ge/sub 2/) and related compounds with similar (nearly equal Si-to-Ge ratio) composition exhibit large magnetoresponsive properties including a giant magnetocaloric effect, colossal magnetostriction, and giant magnetoresistance near a structural-magnetic phase transition that occurs close to ambient temperature. Magnetic force microscopy (MFM) and vibrating sample magnetometry (VSM) measurements on single-crystal samples of these materials indicate that the easy magnetization axis is the b-axis of the orthorhombic magnetic phase-perpendicular to the slabs. In fact, the MFM image of a surface perpendicular to the b-axis is quite similar to domain patterns perpendicular to the easy axis of Co and other highly anisotropic magnetic materials. Therefore, it appears that Gd/sub 5/(Si/sub x/Ge/sub 1-x/)/sub 4/ may require modeling similar to other multilayers and superlattices of rare- earth metals with one or more nonmagnetic constituents that exhibit long-range magnetic order across nonmagnetic layers. Many of the important phenomena of these Gd compounds could be explained by the interaction of localized Gd magnetic moments across the covalent bonding between atomic slabs, adapting models already suggested for other similar materials.

  • MOCVD growth of (Ga/sub 1-x/InAs-GaAs/sub 1-y/Sb/sub y/) superlattices on InP showing type-II emission at wavelengths beyond 2 /spl mu/m

    We report on (Ga/sub 1-x/In/sub x/As-GaAs/sub 1-y/Sb/sub y/) superlattices grown strain-compensated on (100) InP:Fe substrates using metal organic chemical vapor deposition. Low temperature photoluminescence measurements show a spatially indirect type-II recombination of electrons in the conduction band of the Ga/sub 1-x/In/sub x/As and holes in the valence band of the GaAs/sub 1-y/Sb/sub y/ layers at 2.20 /spl mu/m. Type-II emission was observed up to room-temperature with 300 K emission centered at 2.30 /spl mu/m. The valence and conduction band offsets between strain-compensated Ga/sub 0.42/In/sub 0.58/As and GaAs/sub 1-y/Sb/sub y/ (y/spl ap/0.2 to 0.3) layers were estimated to 0.21 eV and 0.33-0.39 eV, respectively.

  • Mocvd Selective Growth of Gaas Wires and Dots by Electron Beam Irradiation

    None

  • Self-organized superlattice in III-V alloys as the result of complex kinetic oscillation

    The formation of self-organized superlattice in some III-V epilayers is mysterious. We propose a time dependent kinetic model for the crystal growth. The self-organized superlattice can be explained as the result of complex kinetic oscillation.

  • Photoluminescence of the GaAs superlattices with quasidelta-doped layers

    Doping superlattices, or n-i-p-i crystals, have advanced properties for the development of novel optoelectronic devices. The delta-doping technology extends possibilities of the superlattice design and allows improving the characteristics compared with homogeneously doped n-i-p-i structures. For the delta-doping, molecular-beam epitaxy is most widely applied. The GaAs delta- doped superlattices were also grown by metal-organic vapor-phase epitaxy. For n- and p-type delta-doping, Si and C were used and tunable low-temperature photoluminescence (PL) was demonstrated. In this work, the GaAs short-period superlattices have been grown for the first time by the metal-organic hydride epitaxy method using Se and C for quasi-delta-doping. Earlier, such a method was applied for making the photosensitive heterostructures with the GalnAs quantum-well spacer. The PL spectra measured at 4.2 K display a structure shape with well-distinguished peaks which coincide with allowed optical transitions between quantized levels of electrons and holes in the potential relief quantum wells. Such a behavior has been also observed for structures grown by gas-source molecular-beam epitaxy

  • A New Delta-Doped Quantum-Well InGaAs-GaAs Resonant-Tunneling Switching Device

    In this paper, a new switching device having a p-type delta-oped sheet, δ(p+), in the center of an InGaAs-GaAs quantum well is presented. An N-shaped negative-differential -resistance (NDR) phenomenon resulting from the resonant tunneling effect through the miniband under a proper anode-to-cathode voltage is observed. From the experimental results, it is seen that the temperature plays an important role in the device performances.

  • Theoretical Predictions For Magnetic Interface Anisotropy

    None

  • Resonant second harmonics generation of the submillimeter surface wave in the semiconductor superlattice bounded by a metal

    In the present paper we are interested in compositional superlattices of the first kind with periodically alternating layers of wide-band and narrow-band semiconductors, where the formation of conductive two-dimensional conductive layers takes place due to a significant distortion of the energy band structure. The superlattices based on GaAs-AlGaAs heterostructures can be taken as an example in this case. In the presence of the external quantizing magnetic field, the realisation of the quantum Hall effect (QHE) in two- dimensional conductive layers is possible. In the present paper we deal with the surface magnetoplasma modes propagating on the lateral surface (i.e. on the surface which is perpendicular to two-dimensional conductive layers and is parallel to the superlattice axis) of the semiconductor superlattice coated by a metal plane. Here we study the process of the resonant second harmonics generation of the SM, which can be of interest for design of semiconductor frequency multipliers. The resonant second harmonics generation is realised when the eigenfrequencies and the wavenumbers of the first and the second harmonics are coupled by phase synchronism conditions.



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