Conferences related to Metal-insulator structures

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2020 IEEE 70th Electronic Components and Technology Conference (ECTC)

ECTC is the premier international conference sponsored by the IEEE Components, Packaging and Manufacturing Society. ECTC paper comprise a wide spectrum of topics, including 3D packaging, electronic components, materials, assembly, interconnections, device and system packaging, optoelectronics, reliability, and simulation.


2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2020 IEEE International Magnetic Conference (INTERMAG)

INTERMAG is the premier conference on all aspects of applied magnetism and provides a range of oral and poster presentations, invited talks and symposia, a tutorial session, and exhibits reviewing the latest developments in magnetism.


2020 IEEE International Power Modulator and High Voltage Conference (IPMHVC)

This conference provides an exchange of technical topics in the fields of Solid State Modulators and Switches, Breakdown and Insulation, Compact Pulsed Power Systems, High Voltage Design, High Power Microwaves, Biological Applications, Analytical Methods and Modeling, and Accelerators.


2020 IEEE International Reliability Physics Symposium (IRPS)

Meeting of academia and research professionals to discuss reliability challenges


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Periodicals related to Metal-insulator structures

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Advanced Packaging, IEEE Transactions on

The IEEE Transactions on Advanced Packaging has its focus on the modeling, design, and analysis of advanced electronic, photonic, sensors, and MEMS packaging.


Antennas and Propagation, IEEE Transactions on

Experimental and theoretical advances in antennas including design and development, and in the propagation of electromagnetic waves including scattering, diffraction and interaction with continuous media; and applications pertinent to antennas and propagation, such as remote sensing, applied optics, and millimeter and submillimeter wave techniques.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


Dielectrics and Electrical Insulation, IEEE Transactions on

Electrical insulation common to the design and construction of components and equipment for use in electric and electronic circuits and distribution systems at all frequencies.


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Most published Xplore authors for Metal-insulator structures

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Xplore Articles related to Metal-insulator structures

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IEEE Draft Standard for Metal-Enclosed Interrupter Switchgear (1 kV-38 kV)

IEEE PC37.20.3/D8, March 2012, 2012

This standard covers metal-enclosed interrupter (MEI) switchgear assemblies containing, but not limited to, such devices as interrupter switches; selector switches; power fuses; circuit breakers; control, instrumentation and metering devices; and protective equipment. It includes, hut is not specifically limited to, equipment for the control and protection of apparatus used for distribution of electrical power.


Metal Insulator Structures For Multichip Modules

Electro International, 1991, 1991

The technology and material choices available for MCMs are discussed in terms of a cost-yield model. The basic building blocks of MCMs are presented and viewed in terms of the number of processing steps, defect density and processing costs.


Thermomagnetic instability of metal-insulator phase boundary

PPPS-2001 Pulsed Power Plasma Science 2001. 28th IEEE International Conference on Plasma Science and 13th IEEE International Pulsed Power Conference. Digest of Papers (Cat. No.01CH37251), 2001

We consider diffusion of a magnetic field into a substance, which undergoes a metal-insulator phase transition under Joule heating. A development of a thermomagnetic instability of the interphase boundary is studied analytically and numerically. Solid solution (V/sub 1-x/Cr/sub x/)/sub 2/O/sub 3/ is taken as a model substance. In the non-linear stage the instability development shows a universal behavior that is ...


Steady-state periodic plasma-field structures created by a wire antenna

Proceedings of the Second International Symposium of Trans Black Sea Region on Applied Electromagnetism (Cat. No.00TH8519), 2000

Summary form only given. The excitation of nonlinear standing waves in the magnetic-field-free corona surrounding a thin wire antenna operating in a rarefied air was investigated experimentally. The experiments were carried out in a cylindrical glass discharge chamber (length 1 m, radius 20 cm). The antenna, a cylindrical monopole (length 40 cm, radius 1 mm) covered by a thin insulator ...


Simple model for the switching I-V characteristic in electroformed MIM structures

2010 27th International Conference on Microelectronics Proceedings, 2010

A simple analytical model for the switching I-V characteristic in electroformed metal-insulator-metal structures is reported. The transitions from the OFF state (high resistance) to the ON state (low resistance) and back are modeled using an equivalent electrical circuit model consisting in two opposite-biased diodes with a series resistance. It is shown how the I-V characteristics are achieved by means of ...


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Educational Resources on Metal-insulator structures

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IEEE.tv Videos

Millimeter-Wave Bandpass Filter Using High-Q Conical Inductors and MOM Capacitors: RFIC Interactive Forum
Nanotechnology, we are already there: APEC 2013 KeyTalk with Dr. Terry Lowe
Kaizad Mistry of Intel accepts the IEEE Corporate Innovation Award - Honors Ceremony 2016
RF-pFET in Fully Depleted SOI Demonstrates 420GHz FT: RFIC Industry Showcase 2017
NYC Soldering Championship
High Efficiency SHG in Heterogeneously Integrated GaAs Ring Resonators - Lin Chang - Closing Ceremony, IPC 2018
PCB Fabrication Influences on Microwave Performance: MicroApps 2015 - Rogers Corporation
IEEE Magnetics Distinguished Lecture - Mitsuteru Inoue
Lizhong Zheng's Globecom 2019 Keynote
2015 IEEE Honors: IEEE Jun-ichi Nishizawa Medal - Dimitri A. Antoniadis
M. George Craford accepts the IEEE Edison Medal - Honors Ceremony 2017
Nanotechnology For Electrical Engineers
Niobium Manufacturing for Superconductivity - ASC-2014 Plenary series - 5 of 13 - Tuesday 2014/8/12
Honors 2020: Paul Daniel Dapkus Wins the Jun-ichi Nishizawa Medal
IMS 2015: Jonas Zmuidzinas - John Tucker Special Tribute - The High-Frequency Limits of SIS Receivers
IRDS: Metrology - George Orji at INC 2019
Financing Connectivity Workshop - Internet Inclusion: Global Connect Stakeholders Advancing Solutions, Washington DC, 2016
2D Nanodevices - Paul Hurley at INC 2019
EMBC 2012 Theme Speaker: Dr. James Bassingthwaighte
IMS 2014: Wideband mmWave Channels: Implications for Design and Implementation of Adaptive Beam Antennas

IEEE-USA E-Books

  • IEEE Draft Standard for Metal-Enclosed Interrupter Switchgear (1 kV-38 kV)

    This standard covers metal-enclosed interrupter (MEI) switchgear assemblies containing, but not limited to, such devices as interrupter switches; selector switches; power fuses; circuit breakers; control, instrumentation and metering devices; and protective equipment. It includes, hut is not specifically limited to, equipment for the control and protection of apparatus used for distribution of electrical power.

  • Metal Insulator Structures For Multichip Modules

    The technology and material choices available for MCMs are discussed in terms of a cost-yield model. The basic building blocks of MCMs are presented and viewed in terms of the number of processing steps, defect density and processing costs.

  • Thermomagnetic instability of metal-insulator phase boundary

    We consider diffusion of a magnetic field into a substance, which undergoes a metal-insulator phase transition under Joule heating. A development of a thermomagnetic instability of the interphase boundary is studied analytically and numerically. Solid solution (V/sub 1-x/Cr/sub x/)/sub 2/O/sub 3/ is taken as a model substance. In the non-linear stage the instability development shows a universal behavior that is independent on a shape of the initial disturbance.

  • Steady-state periodic plasma-field structures created by a wire antenna

    Summary form only given. The excitation of nonlinear standing waves in the magnetic-field-free corona surrounding a thin wire antenna operating in a rarefied air was investigated experimentally. The experiments were carried out in a cylindrical glass discharge chamber (length 1 m, radius 20 cm). The antenna, a cylindrical monopole (length 40 cm, radius 1 mm) covered by a thin insulator layer, was placed along the chamber axis above the metal sheet. The input signal was provided by a RF oscillator operating in the frequency band from 0.1 to 50 MHz with a maximum output voltage 500 V. The air pressure was fixed in the range from 0.1 to 1 Torr. Plasma diagnostics were accomplished by means of a movable Langmuir probe with induction feed and optical-fiber information transmission, the radial component of the near-antenna electric field E/sub r/ was tested by a probe connected with registration facilities with a high-resistive line.

  • Simple model for the switching I-V characteristic in electroformed MIM structures

    A simple analytical model for the switching I-V characteristic in electroformed metal-insulator-metal structures is reported. The transitions from the OFF state (high resistance) to the ON state (low resistance) and back are modeled using an equivalent electrical circuit model consisting in two opposite-biased diodes with a series resistance. It is shown how the I-V characteristics are achieved by means of an appropriate change of model parameters.

  • A 0.18/spl mu/m CMOS direct-conversion receiver front-end for UMTS

    None

  • Novel Thermally-Stable Hafnium and Zirconium ALD Precursors

    Atomic Layer Deposition (ALD) of Hf and Zr oxide films is of considerable interest and promise for future generation Metal-lnsulator-Metal (MIM) structures in memory applications. Hafnium and zirconium alkylamides such as tetrakis(ethylmethylamino) hafnium (TEMAH) and tetrakis (ethylmethylamino) zirconium (TEMAZ) are the most considered precursors. However, their relatively low thermal stability might become a drawback under heated distribution conditions that could result in vaporizer clogging or insufficient long-term stability. Moreover, these precursors may not be suitable if higher deposition temperature processes are sought. Alternative ALD precursors with improved thermal stability could be viable alternatives. Among the precursor families that could be considered (halides, alkoxides, beta-diketonates, tetranitrates, etc.), metallocenes are particularly attractive. New hafnocenes - dimethyl bis(ethylcyclopentadienyl) hafnium, Hf(EtCp)<sub>2</sub>Me<sub>2</sub>, and dimethyl bis(methylcyclopentadienyl) hafnium, Hf(MeCp)<sub>2</sub>Me<sub>2</sub> - with improved physical properties and thermal stability are studied here. The thermal behavior of these new precursors has been extensively characterized for vapor pressure, thermal stability, and evaporation kinetics. The ALD behavior of Hf(EtCp)<sub>2</sub>Me<sub>2</sub> with Cfe as co- reactant was investigated at high temperature (350- 400degC), an ALD deposition rate of 0.72 A/cycle was achieved. Hf(EtCp)<sub>2</sub>Me<sub>2</sub> showed the best compromise between thermal stability, physical properties, and deposition behavior. Similar zirconocenes were also studied: ZrCp<sub>2</sub>Me<sub>2</sub>, Zr(MeCp)<sub>2</sub>Me<sub>2</sub>, Zr(EtCp)<sub>2</sub>Me<sub>2</sub> and Zr(EtCp)(NMe<sub>2</sub>)<sub>3</sub>.

  • Optical, magnetic, and electrical studies of the metal-insulator transition in the mott-hubbard MMX-chain system

    None

  • First InP/GaAsSb/InP DHBT Ka-band MMIC Oscillator

    The demonstration of the first MMIC oscillator using novel InP/GaAsSb/InP double heterojunction bipolar transistors (DHBTs) is presented. The oscillator delivered an output power of 3.2 dBm at 34.9GHz with DC to RF conversion efficiency of 10.9%. The corresponding phase noise at 1MHz offset from the carrier frequency was -92dBc/Hz

  • A model for discretization error in electromagnetic analysis of capacitors

    The error due to discretization in a method-of-moments analysis of a parallel plate or metal-insulator-metal (MIM) capacitor is discussed. A technique related to Richardson extrapolation is used to develop a model for the error due to subsectional discretization. The results are for Galerkin's method using rooftop basis functions; however, the technique can be applied to any variational moment-method calculation. An expression is presented for the error in capacitance calculations, which is shown to hold for changes in geometry and dielectric constant. In addition, the expression for error is shown to be accurate for a wide range of meshing geometries. Surprisingly, the error model is not an upper bound, but rather is met nearly in equality for all geometries considered. Thus, the error may be simply subtracted from the calculated value for a more accurate result.



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