Magnetoresistance

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Magnetoresistance is the property of a material to change the value of its electrical resistance when an external magnetic field is applied to it. (Wikipedia.org)






Conferences related to Magnetoresistance

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2023 Annual International Conference of the IEEE Engineering in Medicine & Biology Conference (EMBC)

The conference program will consist of plenary lectures, symposia, workshops and invitedsessions of the latest significant findings and developments in all the major fields of biomedical engineering.Submitted full papers will be peer reviewed. Accepted high quality papers will be presented in oral and poster sessions,will appear in the Conference Proceedings and will be indexed in PubMed/MEDLINE.


2020 IEEE International Symposium on Antennas and Propagation and North American Radio Science Meeting

The joint meeting is intended to provide an international forum for the exchange of information on state of the art research in the area of antennas and propagation, electromagnetic engineering and radio science


2020 IEEE International Conference on Image Processing (ICIP)

The International Conference on Image Processing (ICIP), sponsored by the IEEE SignalProcessing Society, is the premier forum for the presentation of technological advances andresearch results in the fields of theoretical, experimental, and applied image and videoprocessing. ICIP 2020, the 27th in the series that has been held annually since 1994, bringstogether leading engineers and scientists in image and video processing from around the world.


2020 IEEE International Conference on Plasma Science (ICOPS)

IEEE International Conference on Plasma Science (ICOPS) is an annual conference coordinated by the Plasma Science and Application Committee (PSAC) of the IEEE Nuclear & Plasma Sciences Society.


2020 IEEE International Magnetic Conference (INTERMAG)

INTERMAG is the premier conference on all aspects of applied magnetism and provides a range of oral and poster presentations, invited talks and symposia, a tutorial session, and exhibits reviewing the latest developments in magnetism.


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Periodicals related to Magnetoresistance

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Antennas and Propagation, IEEE Transactions on

Experimental and theoretical advances in antennas including design and development, and in the propagation of electromagnetic waves including scattering, diffraction and interaction with continuous media; and applications pertinent to antennas and propagation, such as remote sensing, applied optics, and millimeter and submillimeter wave techniques.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Biomedical Engineering, IEEE Transactions on

Broad coverage of concepts and methods of the physical and engineering sciences applied in biology and medicine, ranging from formalized mathematical theory through experimental science and technological development to practical clinical applications.


Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


Computer

Computer, the flagship publication of the IEEE Computer Society, publishes peer-reviewed technical content that covers all aspects of computer science, computer engineering, technology, and applications. Computer is a resource that practitioners, researchers, and managers can rely on to provide timely information about current research developments, trends, best practices, and changes in the profession.


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Most published Xplore authors for Magnetoresistance

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Xplore Articles related to Magnetoresistance

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ESD phenomena in GMR heads in the manufacturing process of HDD and GMR heads

IEEE Transactions on Electronics Packaging Manufacturing, 2005

It is well known that giant magnetoresistive (GMR) heads used for hard disk drives (HDD) are very sensitive to electrostatic discharge (ESD). In this paper, we describe a method of categorizing ESD damage modes from a standpoint of magnetic influences on the heads as observed by quasi-static test (QST) characteristics as well as electromagnetic characteristics like off-track profiles. In addition, ...


Giant magnetoresistive properties in granular transition metals

IEEE Transactions on Magnetics, 1993

The giant magnetoresistance (GMR) in granular Co-Ag, Co-Cu, and Fe-Ag systems, as well as in the metastable alloy state, is studied. The absolute values of the resistivity at zero field ( rho /sub 0/), the magnetic resistivity ( rho /sub m/), and GMR are determined. The resistivity of an alloy is found to be significantly larger than that of a ...


Magnetoresistance of ferromagnetic point junctions from tunneling to direct contact regimes

IEEE Transactions on Magnetics, 2004

The behavior of magnetoresistance in NiFe (permalloy) point junctions was investigated using an STM set-up, where the junction resistance was continuously varied from 10/sup 8/ /spl Omega/-10/sup 3/ /spl Omega/. Our results reveal an enhancement of magnetoresistance of more than 80% at one conductance quantum, and the decaying magnetoresistance as one moves away from 12.9 k/spl Omega/ to either the ...


Anisotropic magnetoresistance and Hall effects for Ni-Fe-M alloy thin films

IEEE Transactions on Magnetics, 1990

The anisotropic magnetoresistivity, Delta rho , and resistivity, rho /sub 0/, were measured and related to the ordinary Hall coefficient, R/sub 0/, and the extraordinary Hall coefficient, R/sub s/, for Ni-Fe and (Ni/sub 89.5/Fe/sub 10.5/)/sub 100-x/ M/sub x/(x<or=10) alloy films (M=Al, Si, Co, Cu, Nb or Gd). From the experimental results, the value of Delta rho was found to be ...


Anisotropy effect of magnetoresistance in spin polarized tunneling

IEEE Transactions on Magnetics, 1999

We calculate the influence of single-ion anisotropy in spin polarized tunneling and conclude that the tunneling magnetoresistance ratio increases for lower barrier height with the increasing anisotropy parameter. In particular, the optimal alignment of the ferromagnetic layers, yielding the largest TMR ratio is proposed.


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Educational Resources on Magnetoresistance

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IEEE-USA E-Books

  • ESD phenomena in GMR heads in the manufacturing process of HDD and GMR heads

    It is well known that giant magnetoresistive (GMR) heads used for hard disk drives (HDD) are very sensitive to electrostatic discharge (ESD). In this paper, we describe a method of categorizing ESD damage modes from a standpoint of magnetic influences on the heads as observed by quasi-static test (QST) characteristics as well as electromagnetic characteristics like off-track profiles. In addition, we report an example of GMR stack interlayer diffusion which is one type of hard ESD damage. We also present an example of ESD damage that happened in an actual production process and its preventive measures as guidelines.

  • Giant magnetoresistive properties in granular transition metals

    The giant magnetoresistance (GMR) in granular Co-Ag, Co-Cu, and Fe-Ag systems, as well as in the metastable alloy state, is studied. The absolute values of the resistivity at zero field ( rho /sub 0/), the magnetic resistivity ( rho /sub m/), and GMR are determined. The resistivity of an alloy is found to be significantly larger than that of a granular solid. As the composition (x) of Co or Fe is increased, rho /sub m/ shows a broad maximum at x=20 to 30%. Among the three systems, Co-Ag has the smallest rho (0), the largest rho /sub m/, and hence the largest GMR. Both rho (0) and rho /sub m/ at 5 K in all three systems show a similar dependence on the annealing temperature (T/sub A/). They decrease with increasing T/sub A/, having the largest values in the as- deposited samples, regardless of the sample being alloy or granular. Because rho /sub 0/ and rho /sub m/ decrease with T/sub A/ at different rates, there may or may not be a peak in the GMR at certain value of T/sub A/.<<ETX>>

  • Magnetoresistance of ferromagnetic point junctions from tunneling to direct contact regimes

    The behavior of magnetoresistance in NiFe (permalloy) point junctions was investigated using an STM set-up, where the junction resistance was continuously varied from 10/sup 8/ /spl Omega/-10/sup 3/ /spl Omega/. Our results reveal an enhancement of magnetoresistance of more than 80% at one conductance quantum, and the decaying magnetoresistance as one moves away from 12.9 k/spl Omega/ to either the diffusive regime or the tunneling regime, as supported by independent theories on spin-dependent transport. The suppression of magnetoresistance with incorporation of a 35-nm-thick Au barrier was observed, as well as the dependence of magnetoresistance on the relative orientations of the electrodes.

  • Anisotropic magnetoresistance and Hall effects for Ni-Fe-M alloy thin films

    The anisotropic magnetoresistivity, Delta rho , and resistivity, rho /sub 0/, were measured and related to the ordinary Hall coefficient, R/sub 0/, and the extraordinary Hall coefficient, R/sub s/, for Ni-Fe and (Ni/sub 89.5/Fe/sub 10.5/)/sub 100-x/ M/sub x/(x<or=10) alloy films (M=Al, Si, Co, Cu, Nb or Gd). From the experimental results, the value of Delta rho was found to be strongly related to R/sub s/. At R/sub s/=O, Delta rho reached its maximum value, 0.65 mu Omega -cm, and rho /sub 0/ reached a minimum of 16.91 mu Omega -cm. Contrary to rho /sub 0/, Delta rho did not depend on the film properties such as grain size or lattice imperfection. The R/sub 0/ was -1.6*10/sup -12/ V-cm/AOe at the maximum value of Delta rho . Therefore, it is concluded that large values of the anisotropic magnetoresistivity ratio, Delta rho / rho /sub 0/, would be obtained in ferromagnetic metals and alloys which satisfy the conditions R/sub s/=0 and R/sub 0/ approximately=-1.6*10/sup -12/ V-cm/AOe, simultaneously. It was also revealed that a magnetic moment value of 0.9 mu /sub B/ corresponded to large Delta rho / rho /sub 0/ and R/sub s/=0.<<ETX>>

  • Anisotropy effect of magnetoresistance in spin polarized tunneling

    We calculate the influence of single-ion anisotropy in spin polarized tunneling and conclude that the tunneling magnetoresistance ratio increases for lower barrier height with the increasing anisotropy parameter. In particular, the optimal alignment of the ferromagnetic layers, yielding the largest TMR ratio is proposed.

  • Tunneling Evidence Of Half-metallic Ferromagnetism In The Colossal Magnetoresistive La/sub 0.7/Ca/0.3/MnO/sub 3/ and La//sub 0.7/Sr/0.3/MnO/sub 3/ films

    None

  • Tunnelling Anisotropic MagnetoResistance (TAMR)

    This paper reports on the the discovery of a novel magnetoresistance called tunnelling anisotropic magnetoresistance (TAMR), which may be harnessed for device applications as both volatile and non-volatile memory. TAMR arises when tunnelling into a material with large spin orbit coupling and magnetic anisotropy such as the ferromagnetic semiconductor (Ga,Mn)As. It results from the strong coupling between the holes and the Mn system, which translates the magnetic anisotropy into an anisotropy in the transport density of states (DOS). This effect was first observed in a Au/AlO<sub>x</sub>/(Ga,Mn)As tunnel structure.

  • Thermal asperity of TMR heads for removable disk drives

    The thermal asperity of the tunneling magnetoresistive (TMR) head was studied using Zip-type flexible media, and compared with that of the anisotropic magnetoresistive (AMR) head. The examined head had a shielded structure with the TMR element close to the air bearing surface. Nevertheless, it generated relatively small thermal asperity even when the mechanical spacing between the head and medium was less than 20 nm, at which large and frequent thermal asperity was observed when the AMR head was used. Such relatively small thermal asperity of the TMR head Is attributed mainly to the small low- temperature coefficient of the electrical resistivity of the TMR element.

  • Giant magnetoresistance in pseudo-binary bulk alloys

    Giant magnetoresistance (GMR) has been observed in magnetically optimized AlNiCo/sub 5/ and FeCrCo bulk alloys with amplitudes sizes as much as 3% at 300 K and 5% at 10 K. In contrast, homogenized FeCrCo samples show the anisotropic magnetoresistance. The field dependence of the GMR amplitude cannot be scaled by a simple function of magnetization due to a strong field dependence beyond saturation.

  • Magnetoresistance and Hall Effects for Fe-Ni-M Alloy Thin Films

    The relation between the anisotropic magnetoresistivity ratio Δρ/ρ0and the ordinary Hall coefficient R0and extraordinary Hall coefficient Rswere studied for Ni-Fe binary alloy and for (Ni89.5Fe10.5)M (M = Co,Cu,Nb,Gd,Al,Si and Bi) ternary alloy thin films, to obtain guidelines in searching for new materials with large values of Δ&#c003C1;/ρ0. The value of Δρ/ρ0increases with increases in the absolute value of R0, and also shows a maximum (Δρ/&3x003C1;0≈ 4%) at Rs= 0. For ferromagnetic metals, a large value of Δρ/ρ0can be obtained under the following conditions: (1) the sign of R0is negative and the absolute value of R0is large (carriers are electron-like and the effective carrier density ηeffis small), and (2) Rsis zero.



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