Conferences related to Magnetoelectronics

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2020 57th ACM/ESDA/IEEE Design Automation Conference (DAC)

The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2022 59th ACM/ESDA/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2021 58th ACM/ESDA/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2019 56th ACM/ESDA/IEEE Design Automation Conference (DAC)

    EDA (Electronics Design Automation) is becoming ever more important with the continuous scaling of semiconductor devices and the growing complexities of their use in circuits and systems. Demands for lower-power, higher-reliability and more agile electronic systems raise new challenges to both design and design automation of such systems. For the past five decades, the primary focus of research track at DAC has been to showcase leading-edge research and practice in tools and methodologies for the design of circuits and systems.

  • 2018 55th ACM/ESDA/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2017 54th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2016 53nd ACM/EDAC/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2015 52nd ACM/EDAC/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2014 51st ACM/EDAC/IEEE Design Automation Conference (DAC)

    DAC Description for TMRF The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading

  • 2013 50th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 session on design methodologies and EDA tool developments, keynotes, panels, plus User Track presentations. A diverse worldwide community representing more than 1,000 organization attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2012 49th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The Design Automation Conference (DAC) is the premier event for the design of electronic circuits and systems, and for EDA and silicon solutions. DAC features a wide array of technical presentations plus over 200 of the leading electronics design suppliers

  • 2011 48th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The Design Automation Conference is the world s leading technical conference and tradeshow on electronic design and design automation. DAC is where the IC Design and EDA ecosystem learns, networks, and does business.

  • 2010 47th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The Design Automation Conference (DAC) is the premier event for the design of electronic circuits and systems, and for EDA and silicon solutions. DAC features a wide array of technical presentations plus over 200 of the leading electronics design suppliers.

  • 2009 46th ACM/EDAC/IEEE Design Automation Conference (DAC)

    DAC is the premier event for the electronic design community. DAC offers the industry s most prestigious technical conference in combination with the biggest exhibition, bringing together design, design automation and manufacturing market influencers.

  • 2008 45th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The Design Automation Conference (DAC) is the premier event for the design of electronic circuits and systems, and for EDA and silicon solutions. DAC features a wide array of technical presentations plus over 250 of the leading electronics design suppliers.

  • 2007 44th ACM/IEEE Design Automation Conference (DAC)

    The Design Automation Conference (DAC) is the premier Electronic Design Automation (EDA) and silicon solution event. DAC features over 50 technical sessions covering the latest in design methodologies and EDA tool developments and an Exhibition and Demo Suite area with over 250 of the leading EDA, silicon and IP Providers.

  • 2006 43rd ACM/IEEE Design Automation Conference (DAC)

  • 2005 42nd ACM/IEEE Design Automation Conference (DAC)

  • 2004 41st ACM/IEEE Design Automation Conference (DAC)

  • 2003 40th ACM/IEEE Design Automation Conference (DAC)

  • 2002 39th ACM/IEEE Design Automation Conference (DAC)

  • 2001 38th ACM/IEEE Design Automation Conference (DAC)

  • 2000 37th ACM/IEEE Design Automation Conference (DAC)

  • 1999 36th ACM/IEEE Design Automation Conference (DAC)

  • 1998 35th ACM/IEEE Design Automation Conference (DAC)

  • 1997 34th ACM/IEEE Design Automation Conference (DAC)

  • 1996 33rd ACM/IEEE Design Automation Conference (DAC)


2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2020 IEEE International Magnetic Conference (INTERMAG)

INTERMAG is the premier conference on all aspects of applied magnetism and provides a range of oral and poster presentations, invited talks and symposia, a tutorial session, and exhibits reviewing the latest developments in magnetism.


2019 IEEE 8th International Conference on Advanced Optoelectronics and Lasers (CAOL)

CAOL*2019 will provide a forum for scientists in a wide area of laser physics, optoelectronics, optics and photonics. The conference will cover wide frontiers in laser physics, photonics, nanotechnology, material physics, nonlinear optics and optical communications. Its characteristic feature is a stronger emphasis on the mathematical, physical and technological aspects of the problems in hand, together with detailed analysis of application problems. This year in the frame of CAOL we will organize two accompanying events, the Workshop on Data Science in Modern Optoelectronics and Laser Engineering and the Workshop “Measurement Uncertainty: Scientific, Standard, Applied and Methodical Aspects” (UM*2019). DSMOLE*2019 will be dedicated to problems arising from merging of modern optoelectronics and laser engineering with data science, artificial and computational intelligence. UM*2019 will cover cutting edge developments in metrology and adjacent fields.

  • 2016 IEEE 7th International Conference on Advanced Optoelectronics and Lasers (CAOL)

    The conference will cover wide frontiers in laser physics, nanotechnology, new materials, nonlinear optics and optical communications. Its characteristic feature is a stronger emphasis on the mathematical, physical and technological aspects of the researches, together with a detail analysis of the application problems. The technical program traditionally consists of invited lectures and regular contributed papers. The technical program traditionally consists of invited lectures and regular contributed papers (oral and poster sessions). The previous conferences were successfully held in since 1999 in different cities of Ukraine and Mexico. Information on the previous international meetings on optoelectronics and lasers can be found in IEEE Photonics Society Newsletter (formerly IEEE/LEOS Newsletters): 4-1999, 4-2000, 4-2001, 3- 2004 2-2006, 2-2009, 4-2010, 4-2011 etc.

  • 2013 International Conference on Advanced Optoelectronics and Lasers (CAOL)

    CAOL*2013 will provide a forum for scientists in a wide area of laser physics and optoelectronics. The conference will cover wide frontiers in laser physics, nanotechnology, new materials, nonlinear optics and optical communications. Its characteristic feature is a stronger emphasis on the mathematical, physical and technological aspects of the researches, together with a detail analysis of the application problems. The technical program traditionally consists of invited lectures and regular contributed papers. The previous conferences were successfully held in 2003, 2005, 2008 and 2010 in Crimea, and in 2006 in Guanajuato, Mexico. Information on the previous international meetings on optoelectronics and lasers can be found in IEEE Photonics Society Newsletter (formerly IEEE/LEOS Newsletters): 4-1999, 4-2000, 4-2001, 3-2004 2-2006, 2-2009, 4-2010, 4-2011 etc.

  • 2010 International Conference on Advanced Optoelectronics and Lasers (CAOL)

    The conference cover wide frontiers in laser physics, nanotechnology, new materials, nonlinear optics and optical communications. Its characteristic feature is a stronger emphasis on the mathematical, physical and technological aspects of the researches, together with analysis of the application problems. The technical program consists of invited and regular contributed papers.

  • 2008 International Conference on Advanced Optoelectronics and Lasers (CAOL)

    The 4-nd International Conference on Advanced Optoelectronics and Lasers (CAOL'2008) will be held in Alushta, Crimea, Ukraine, from September 29 to October 4, 2008. CAOL'2008 will provide a forum for experts in a wide area of laser physics and optoelectronics. The previous conferences were successfully provided in 2003 and 2005 in Crimea, and in 2006 in Guanajuato, Mexico.

  • 2005 International Conference on Advanced Optoelectronics and Lasers (CAOL)

  • 2003 International Conference on Advanced Optoelectronics and Lasers (CAOL)


2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)

The world's premiere conference in MEMS sensors, actuators and integrated micro and nano systems welcomes you to attend this four-day event showcasing major technological, scientific and commercial breakthroughs in mechanical, optical, chemical and biological devices and systems using micro and nanotechnology.The major areas of activity in the development of Transducers solicited and expected at this conference include but are not limited to: Bio, Medical, Chemical, and Micro Total Analysis Systems Fabrication and Packaging Mechanical and Physical Sensors Materials and Characterization Design, Simulation and Theory Actuators Optical MEMS RF MEMS Nanotechnology Energy and Power


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Periodicals related to Magnetoelectronics

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Circuits and Systems II: Express Briefs, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Computers, IEEE Transactions on

Design and analysis of algorithms, computer systems, and digital networks; methods for specifying, measuring, and modeling the performance of computers and computer systems; design of computer components, such as arithmetic units, data storage devices, and interface devices; design of reliable and testable digital devices and systems; computer networks and distributed computer systems; new computer organizations and architectures; applications of VLSI ...


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Magnetics, IEEE Transactions on

Science and technology related to the basic physics and engineering of magnetism, magnetic materials, applied magnetics, magnetic devices, and magnetic data storage. The Transactions publishes scholarly articles of archival value as well as tutorial expositions and critical reviews of classical subjects and topics of current interest.


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Most published Xplore authors for Magnetoelectronics

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Xplore Articles related to Magnetoelectronics

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First-Principles Study of Magnetic Exchange Interactions of <formula formulatype="inline"><tex Notation="TeX">$3{\rm -D}$</tex></formula> Transition Mental Adatoms on Graphene

IEEE Transactions on Magnetics, 2011

We have performed first-principles calculation to investigate the magnetic exchange interactions of 3-D transition metals (TMs) adatoms on graphene. Our study found that the most stable adsorption sites and geometries of different 3-D TM dimmer adatoms on graphene are obviously distinct. The obtained magnetic exchange energies indicate that Fe and Co adatoms on graphenes are always ferromagnetic coupling. Thus, they ...


Parameter variation investigation of Magnetic Tunnel Junctions

2012 Digest APMRC, 2012

Magnetic Tunnel Junction (MTJ) is a widely used spintronics structure in many applications. The tunneling magneto-resistance (TMR) is an important metric indicating MTJ sensitivity, and modeling this phenomenon is nontrivial, owing to the complicated nature of spin dependent tunneling. Deploying numerical tools such as OOMMF and SpinFlow3D software, which treats tunneling by way of a voltage-dependent areal conductance, we study ...


Thermoelectrically Controlled Spin-Switch

IEEE Transactions on Magnetics, 2010

The search for novel spintronic devices brings about new ways to control switching in magnetic thin-films. In this work we experimentally demonstrate a device based on thermoelectrically controlled exchange coupling. The read out signal from a giant magnetoresistance element is controlled by exchange coupling through a weakly ferromagnetic Ni-Cu alloy. This exchange coupling is shown to vary strongly with changes ...


A GHz spintronic-based RF oscillator

2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers, 2009

In this paper, a first investigation of the use of spintronic based oscillators has been made with very promising results showing a large frequency tuning range (85%), combined with extremely small die size compare to the standard LC VCO (gain factor of 50). The measured output power is -45 dBm, which is two decades higher than published results from spin ...


Spin relaxation in n-type multivalley semiconductors

2015 IEEE International Magnetics Conference (INTERMAG), 2015

This article discusses the mechanism for electron spin relaxation in silicon which is highly doped with P, As, Sb, and Bi. It is shown in this study that the intervalley scattering driven by donor impurities is more significant than the intravalley counterpart. These leading-order spin flips are dictated by the crystal and band structure symmetry. Observations show the microscopic mechanism ...


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Educational Resources on Magnetoelectronics

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IEEE.tv Videos

No IEEE.tv Videos are currently tagged "Magnetoelectronics"

IEEE-USA E-Books

  • First-Principles Study of Magnetic Exchange Interactions of <formula formulatype="inline"><tex Notation="TeX">$3{\rm -D}$</tex></formula> Transition Mental Adatoms on Graphene

    We have performed first-principles calculation to investigate the magnetic exchange interactions of 3-D transition metals (TMs) adatoms on graphene. Our study found that the most stable adsorption sites and geometries of different 3-D TM dimmer adatoms on graphene are obviously distinct. The obtained magnetic exchange energies indicate that Fe and Co adatoms on graphenes are always ferromagnetic coupling. Thus, they may be a candidate of graphene-based spintronics devices. Furthermore, electronic structure analysis shows that mechanism of ferromagnetic interaction of 3-D TMs adatoms on graphene is either direct exchange (two TMs adatoms are on the same side of graphene) or superexchange (two TMs adatoms are on the two sides of graphene).

  • Parameter variation investigation of Magnetic Tunnel Junctions

    Magnetic Tunnel Junction (MTJ) is a widely used spintronics structure in many applications. The tunneling magneto-resistance (TMR) is an important metric indicating MTJ sensitivity, and modeling this phenomenon is nontrivial, owing to the complicated nature of spin dependent tunneling. Deploying numerical tools such as OOMMF and SpinFlow3D software, which treats tunneling by way of a voltage-dependent areal conductance, we study properties of MTJs, such as TMR, varying a number of parameters, including MTJ stack taper angle, parameters of voltage-dependent areal conductance associated with the MgO barrier, and other parameters accessible in the model, including bias and coercive field behavior based on geometrical parameters. We find that a taper angle, which is a consequence of fabrication processes, has negligible effect on TMR. Additionally, it is shown that the current distributions in MTJs, when a bias voltage is applied, is actually nonuniform. We also show that introducing geometrical artifacts in the structure can strongly influence properties such as coercive and bias fields in MTJs.

  • Thermoelectrically Controlled Spin-Switch

    The search for novel spintronic devices brings about new ways to control switching in magnetic thin-films. In this work we experimentally demonstrate a device based on thermoelectrically controlled exchange coupling. The read out signal from a giant magnetoresistance element is controlled by exchange coupling through a weakly ferromagnetic Ni-Cu alloy. This exchange coupling is shown to vary strongly with changes in temperature, and both internal Joule heating and external heating is used to demonstrate magnetic switching. The device shows no degradation upon thermal cycling. Ways to further optimize the device performance are discussed. Our experimental results show a new way to thermoelectrically control magnetic switching in multilayers.

  • A GHz spintronic-based RF oscillator

    In this paper, a first investigation of the use of spintronic based oscillators has been made with very promising results showing a large frequency tuning range (85%), combined with extremely small die size compare to the standard LC VCO (gain factor of 50). The measured output power is -45 dBm, which is two decades higher than published results from spin valves exhibiting similar narrow RF emissions with a dynamic of 120 dBc. Further improvements in the performance of the STO are expected both at the device level (by magnetic multi-layer engineering) and at the system level, through new oscillator and transceiver architectures.

  • Spin relaxation in n-type multivalley semiconductors

    This article discusses the mechanism for electron spin relaxation in silicon which is highly doped with P, As, Sb, and Bi. It is shown in this study that the intervalley scattering driven by donor impurities is more significant than the intravalley counterpart. These leading-order spin flips are dictated by the crystal and band structure symmetry. Observations show the microscopic mechanism to be the spin-orbit interaction with the central cell region of the donors rather than due to the ions' long-range electric field, and associate the interaction strength with the fine spectrum of the donor states.

  • Mechanical and electrical properties of Ni nanocontacts

    The dynamic deformation upon stretching of Ni nanowires as those formed in mechanically controllable break junctions is studied. In order to compare with experiments, we also compute the transport properties in the last stages before failure using the first-principles implementation of Landauer's formalism included in our transport package ALACANT.

  • Amorphous Carbon: A Smart Material for Spintronics Applicatioe

    The carbon-based material has been identified as a candidate material for semiconductor applications and has renewed interest in its electrical, optical and magnetoelectronic properties. Thin films of amorphous carbon(a-C) are amorphous semiconductors with a mixture of graphite-like sp2 and diamond-like sp3 bond characteristics; tuning of the sp2/sp3 ratio, makes them superior with many degrees of freedom over the conventional group I V amorphous semiconductors. Especially, recently developments in spintronic materials have drawn attention to the magnetoelectronic properties. The combination of ferromagnetic materials and carbon will produce interesting properties.

  • Ferromagnetism in nanotubes controlled by electron/hole doping

    Spintronics requires fabrication of magnetic nanostructures, therefore we synthesized a distinctly structured open-net layered-wall vanadium oxide (VO<sub>x</sub>) nanotubes, using the, so called, 'chimie douce' techniques. We discovered that these nanotubes can be easily spin-tuned by charge doping. By adding either electrons (e.g. doping with lithium) or holes (e.g. doping with iodine) to this multiband strongly correlated system, we found that the initially spin-frustrated nanotubes develop a nearly identical nonlinear ferromagnetic spin response. Based on complex structure of VO<sub>x</sub> nanotubes, we developed a model explaining how either electron (Li) or hole (I) doping can produce an identical magnetic response in such layered low- dimensional objects.

  • Effect of underlayer on thickness dependent magnetic properties of Ni-Fe films

    Permalloy (Ni<sub>81</sub>Fe<sub>19</sub>) thin films are considered to be one of the promising candidates for various modern magnetoelectronics devices due to their excellent soft magnetic properties. To control soft magnetic properties, extensive efforts have been made on the various growth conditions of the Permalloy films both in single and multilayer form. Kim et al reported the variation of uniaxial anisotropy with film thickness and applied magnetic field during the film deposition. On the other hand, Gong et al reported that structural and magnetotransport properties depend strongly on the substrate nature and underlayer materials. In this study, we have carried out systematic investigation on the effect of thermally resistive Ta underlayer and externally applied magnetic field on the structural and magnetic properties of Permalloy film prepared over a wide range of film thicknesses.

  • A Schottky tunnel barrier contact for electrical spin injection from a magnetic metal into a semiconductor

    In this paper, we report here that spin injection from an Fe Schottky contact produces a spin polarization of 32% in an AlGaAs/GaAs quantum well, demonstrate via the Rowell criteria that tunneling is the dominate transport process, and examine the atomic structure of the spin injecting interface with TEM.



Standards related to Magnetoelectronics

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