Conferences related to Magnetic tunneling

Back to Top

2023 Annual International Conference of the IEEE Engineering in Medicine & Biology Conference (EMBC)

The conference program will consist of plenary lectures, symposia, workshops and invitedsessions of the latest significant findings and developments in all the major fields of biomedical engineering.Submitted full papers will be peer reviewed. Accepted high quality papers will be presented in oral and poster sessions,will appear in the Conference Proceedings and will be indexed in PubMed/MEDLINE.


2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2020 IEEE International Magnetic Conference (INTERMAG)

INTERMAG is the premier conference on all aspects of applied magnetism and provides a range of oral and poster presentations, invited talks and symposia, a tutorial session, and exhibits reviewing the latest developments in magnetism.


2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)

The world's premiere conference in MEMS sensors, actuators and integrated micro and nano systems welcomes you to attend this four-day event showcasing major technological, scientific and commercial breakthroughs in mechanical, optical, chemical and biological devices and systems using micro and nanotechnology.The major areas of activity in the development of Transducers solicited and expected at this conference include but are not limited to: Bio, Medical, Chemical, and Micro Total Analysis Systems Fabrication and Packaging Mechanical and Physical Sensors Materials and Characterization Design, Simulation and Theory Actuators Optical MEMS RF MEMS Nanotechnology Energy and Power


2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)

Science, technology and applications spanning the millimeter-waves, terahertz and infrared spectral regions


More Conferences

Periodicals related to Magnetic tunneling

Back to Top

Antennas and Propagation, IEEE Transactions on

Experimental and theoretical advances in antennas including design and development, and in the propagation of electromagnetic waves including scattering, diffraction and interaction with continuous media; and applications pertinent to antennas and propagation, such as remote sensing, applied optics, and millimeter and submillimeter wave techniques.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Circuits and Systems II: Express Briefs, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Communications Magazine, IEEE

IEEE Communications Magazine was the number three most-cited journal in telecommunications and the number eighteen cited journal in electrical and electronics engineering in 2004, according to the annual Journal Citation Report (2004 edition) published by the Institute for Scientific Information. Read more at http://www.ieee.org/products/citations.html. This magazine covers all areas of communications such as lightwave telecommunications, high-speed data communications, personal communications ...


Computer Architecture Letters

Rigorously peer-reviewed forum for publishing early, high-impact results in the areas of uni- and multiprocessors computer systems, computer architecture workload characterization, performance evaluation and simulation techniques, and power-aware computing


More Periodicals


Xplore Articles related to Magnetic tunneling

Back to Top

Analog digital converter using Josephson junctions

1977 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1977

None


Oblique sweep-frequency experiments over a 2000-km North-South subauroral path

Radio Science, 1967

The high-frequency limits for radio transmission are calculated from the data of vertical sounding stations. For distances < 2000 km, only the vertical data of the station at the midpoint of the path are used. To check this rule, oblique and vertical sweep-frequency records which were observed under normal and anomalous conditions were compared. If the distribution of ionization is ...


Transistor demodulator for magnetic amplifiers in A-C servo applications

Electrical Engineering, 1955

A phase-sensitive transistor demodulator in series with the high-gain 2-stage magnetic amplifier, as described, provides a unit that is very effective in a position servo system.


Spin/Memory

71st Device Research Conference, 2013

None


Quantitative Magnetic Characterization of Synthetic Ferrimagnets for Predictive Spin-Dynamic Behavior

IEEE Transactions on Magnetics, 2014

Geometric or magnetic asymmetries in synthetic antiferromagnetic particles give rise to ferrimagnetic-like magnetization behavior, both quasi-static and dynamic. Such asymmetries in synthetic ferrimagnets can originate from a thickness imbalance or a fringing field from the reference layer in a nanopillar stack. In this paper, we theoretically describe the effects of the corresponding magnetic asymmetry contribution on the structure's static and ...


More Xplore Articles

Educational Resources on Magnetic tunneling

Back to Top

IEEE-USA E-Books

  • Analog digital converter using Josephson junctions

    None

  • Oblique sweep-frequency experiments over a 2000-km North-South subauroral path

    The high-frequency limits for radio transmission are calculated from the data of vertical sounding stations. For distances < 2000 km, only the vertical data of the station at the midpoint of the path are used. To check this rule, oblique and vertical sweep-frequency records which were observed under normal and anomalous conditions were compared. If the distribution of ionization is nearly constant along the route, normal conditions are present, and the high- frequency limits calculated from the midpoint station are consistent with the oblique observations. Anomalous conditions are present during winter nights. At this time the critical frequencies may vary over a distance of 500 km by a factor of 2 or more. These steep gradients imply that the maximum observed frequency (MOF) is much higher than the calculated maximum usable frequency (MUF). Additional transmission modes are observed which are explained using rough models. The steep gradients were found to be moving southward during the night. A statistical analysis indicates that the magnitude of the gradient and the extent of this motion is increased with increased magnetic activity.

  • Transistor demodulator for magnetic amplifiers in A-C servo applications

    A phase-sensitive transistor demodulator in series with the high-gain 2-stage magnetic amplifier, as described, provides a unit that is very effective in a position servo system.

  • Spin/Memory

    None

  • Quantitative Magnetic Characterization of Synthetic Ferrimagnets for Predictive Spin-Dynamic Behavior

    Geometric or magnetic asymmetries in synthetic antiferromagnetic particles give rise to ferrimagnetic-like magnetization behavior, both quasi-static and dynamic. Such asymmetries in synthetic ferrimagnets can originate from a thickness imbalance or a fringing field from the reference layer in a nanopillar stack. In this paper, we theoretically describe the effects of the corresponding magnetic asymmetry contribution on the structure's static and spin-dynamic behavior. The developed model is then used to experimentally determine the asymmetry parameters of typical nanoscale spin-flop junctions, as well as successfully describe their microwave resonant properties, such as the frequency splitting and the field dependence of the optical spin-resonance spectra.

  • A spin Hall effect-based multi-level cell for MRAM

    Multi-level cell (MLC) is an efficient solution to improve the storage density of the MRAM. However, the conventional spin transfer torque-based MLC (STT- MLC) suffers from the performance bottlenecks such as high write energy and complicated two-step operation. In this work, we propose a spin Hall effect- based MLC (SHE-MLC) to overcome these bottlenecks. In the SHE-MLC structure, the write current does not pass the MTJ, which avoids the barrier breakdown and reduces the write energy. Moreover, the written data is only dependent on the direction of the write current, thus the two-step operation is not required. Simulation results demonstrate that, under the same access transistor size, e.g. 600 nm, the proposed SHE-MLC can achieve 55× faster write operation and 58× lower write energy than the conventional STT-MLC.

  • Decimal Tunneling Magnetoresistance States in Fe/GaAlAs/GaMnAs Magnetic Tunnel Junction

    We report the realization of ten stable tunneling magnetoresistance (TMR) states in a single device. To achieve ten resistance states, we have used a magnetic tunnel junction (MTJ) structure that consists of two magnetic layers, which are Fe and GaMnAs ferromagnetic layers. Owing to the two in-plane magnetic easy axes that result from strong cubic anisotropies in both Fe and GaMnAs layers, noncollinear magnetic configurations between two magnetic layers were realized, in addition to the parallel and antiparallel configurations. Such noncollinear magnetic configurations provide stable intermediate TMR values between two extreme values corresponding parallel and antiparallel configurations. The number of stable TMR values was further increased by forming multidomain structures in the MTJ structure. We demonstrate that we can obtain up to ten stable TMR values, and they can be controlled by applying the appropriate magnetic field sequences.

  • Parameter variation investigation of Magnetic Tunnel Junctions

    Magnetic Tunnel Junction (MTJ) is a widely used spintronics structure in many applications. The tunneling magneto-resistance (TMR) is an important metric indicating MTJ sensitivity, and modeling this phenomenon is nontrivial, owing to the complicated nature of spin dependent tunneling. Deploying numerical tools such as OOMMF and SpinFlow3D software, which treats tunneling by way of a voltage-dependent areal conductance, we study properties of MTJs, such as TMR, varying a number of parameters, including MTJ stack taper angle, parameters of voltage-dependent areal conductance associated with the MgO barrier, and other parameters accessible in the model, including bias and coercive field behavior based on geometrical parameters. We find that a taper angle, which is a consequence of fabrication processes, has negligible effect on TMR. Additionally, it is shown that the current distributions in MTJs, when a bias voltage is applied, is actually nonuniform. We also show that introducing geometrical artifacts in the structure can strongly influence properties such as coercive and bias fields in MTJs.

  • Proton irradiation effects and annealing behaviors of 16Mb magneto-resistive random access memory(MRAM)

    This paper presents the 3 MeV proton irradiation results of a 16Mb commercial MRAM. The total ionizing dose(TID) effects induced by proton irradiaton and the following room temperature annealing behaviors are analyzed in detail. Read bit errors and electrical failures were observed when the proton fluence was accumulated to 2.5×1011 particles/cm2. The peripheral circuits are more sensitive to proton irradiation. These results are useful for hardening MRAM designs aiming at space-borne applications.

  • Characterization of an AlO<formula formulatype="inline"><tex Notation="TeX">$_{\rm x}$</tex></formula>Tunneling Barrier in a Magnetic Tunnel Junction by a Surface Plasmon Resonance Spectroscopy Technique

    We measured tunneling magnetoresistance (TMR) in a magnetic tunnel junction as a function of temperature. We used surface plasmon resonance spectroscopy (SPRS)-one of the most useful tools in the analysis of dielectric function in a thin tunneling barrier-to study the correlation of AlOxbarrier quality with the temperature dependent behavior of the TMR ratio. The experimental SPRS analysis suggests that the decrease of the TMR ratio starting at 150 K is caused by residual Al metallic defects distributed within the insulating AlOxbarrier. We checked this result by measuring the junction resistances in parallel and antiparallel states.



Standards related to Magnetic tunneling

Back to Top

No standards are currently tagged "Magnetic tunneling"


Jobs related to Magnetic tunneling

Back to Top