Conferences related to MOSHFETs

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2020 IEEE Industry Applications Society Annual Meeting

The Annual Meeting is a gathering of experts who work and conduct research in the industrial applications of electrical systems.


2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2020 IEEE/MTT-S International Microwave Symposium (IMS)

The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2036 IEEE/MTT-S International Microwave Symposium - IMS 2036

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2031 IEEE/MTT-S International Microwave Symposium - IMS 2031

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2029 IEEE/MTT-S International Microwave Symposium - IMS 2029

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2026 IEEE/MTT-S International Microwave Symposium - IMS 2026

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2025 IEEE/MTT-S International Microwave Symposium - IMS 2025

    The IEEE International Microwave Symposium (IMS) is the world s foremost conferencecovering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies;encompassing everything from basic technologies to components to systems including thelatest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulationand more. The IMS includes technical and interactive sessions, exhibits, student competitions,panels, workshops, tutorials, and networking events.

  • 2024 IEEE/MTT-S International Microwave Symposium - IMS 2024

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2021 IEEE/MTT-S International Microwave Symposium - IMS 2021

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.

  • 2019 IEEE/MTT-S International Microwave Symposium - IMS 2019

    Comprehensive symposium on microwave theory and techniques including active and passive circuit components, theory and microwave systems.

  • 2018 IEEE/MTT-S International Microwave Symposium - IMS 2018

    Microwave theory and techniques, RF/microwave/millimeter-wave/terahertz circuit design and fabrication technology, radio/wireless communication.

  • 2017 IEEE/MTT-S International Microwave Symposium - IMS 2017

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.

  • 2016 IEEE/MTT-S International Microwave Symposium - IMS 2016

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2015 IEEE/MTT-S International Microwave Symposium - MTT 2015

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics. The IMS includes technical sessions, both oral and interactive, worksh

  • 2014 IEEE/MTT-S International Microwave Symposium - MTT 2014

    IMS2014 will cover developments in microwave technology from nano devices to system applications. Technical paper sessions, interactive forums, plenary and panel sessions, workshops, short courses, industrial exhibits, and a wide array of other technical activities will be offered.

  • 2013 IEEE/MTT-S International Microwave Symposium - MTT 2013

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter -wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2012 IEEE/MTT-S International Microwave Symposium - MTT 2012

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2011 IEEE/MTT-S International Microwave Symposium - MTT 2011

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2010 IEEE/MTT-S International Microwave Symposium - MTT 2010

    Reports of research and development at the state-of-the-art of the theory and techniques related to the technology and applications of devices, components, circuits, modules and systems in the RF, microwave, millimeter-wave, submillimeter-wave and Terahertz ranges of the electromagnetic spectrum.

  • 2009 IEEE/MTT-S International Microwave Symposium - MTT 2009

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2008 IEEE/MTT-S International Microwave Symposium - MTT 2008

  • 2007 IEEE/MTT-S International Microwave Symposium - MTT 2007

  • 2006 IEEE/MTT-S International Microwave Symposium - MTT 2006

  • 2005 IEEE/MTT-S International Microwave Symposium - MTT 2005

  • 2004 IEEE/MTT-S International Microwave Symposium - MTT 2004

  • 2003 IEEE/MTT-S International Microwave Symposium - MTT 2003

  • 2002 IEEE/MTT-S International Microwave Symposium - MTT 2002

  • 2001 IEEE/MTT-S International Microwave Symposium - MTT 2001

  • 2000 IEEE/MTT-S International Microwave Symposium - MTT 2000

  • 1999 IEEE/MTT-S International Microwave Symposium - MTT '99

  • 1998 IEEE/MTT-S International Microwave Symposium - MTT '98

  • 1997 IEEE/MTT-S International Microwave Symposium - MTT '97

  • 1996 IEEE/MTT-S International Microwave Symposium - MTT '96


2019 IEEE 20th Wireless and Microwave Technology Conference (WAMICON)

The conference will address up-to-date multidisciplinary research needs and interdisciplinary aspects of wireless and RF technology.


2018 10th International Conference on Electrical and Computer Engineering (ICECE)

Algorithms and theoryBiomedical engineeringBiometricsBig dataComputer networksControl theory and applicationsDistributed and cloud computingElectric vehiclesElectrical and electronic circuitsElectrical machines and drivesElectronic materials and devicesEmbedded and intelligent systemsEmerging technologiesEngineering educationGenetics and bioinformaticsHigh voltage engineering

  • 2016 9th International Conference on Electrical and Computer Engineering (ICECE)

    : ICECE 2016 invites papers from all areas of Electrical and Computer Engineering. The topics of interest include but are not limited to: Algorithms and Theory • Biomedical engineering • Biometrics • Big Data • Electrical and electronic circuits • Computer networks • Control theory and applications • Distributed and cloud computing • Electrical machines and drives • Electronic materials and devices • Embedded and intelligent systems • Emerging technologies • Engineering education • Genetics and bioinformatics • High voltage engineering • Instrumentation and sensors •Internet of Things • Microwave and RF engineering • Multimedia • Mobile Computing • Nanotechnology and MEMS • Network Security • Optical communications • Photonics and Plasmonics • Power and energy systems • Renewable energy • Robotics and mechatronics • Signal, image and video processing • Smart grids • Software engineering • VLSI design and fabrication • Wireless communication and networking

  • 2014 8th International Conference on Electrical and Computer Engineering (ICECE)

    ICECE 2014 invites papers from all areas of Electrical and Computer Engineering. The topics of interest include but are not limited to:

  • 2012 7th International Conference on Electrical & Computer Engineering (ICECE)

    Biomedical engineering, bioinformatics, circuits and systems, communications and wireless systems, control theory, electronic and optoelectronic materials and devices, electrical machines, electromagnetics, algorithms and computation, high voltage engineering, information technology, instrument and measurement, microwave and RF engineering, multimedia systems and applications, nanodevices and MEMS, communications networking, neural network and fuzzy logic, power electronics and drives, power systems, renewable energy, robotics and mechatronics, signal processing, smart power grid, VLSI design and fabrication.

  • 2010 International Conference on Electrical & Computer Engineering (ICECE)

    Biomedical engineering Bioinformatics and biometrics Circuits and Systems Communication and wireless systems Control theory and applications Electronic, optoelectronic materials and devices Electrical machines Electromagnetics Emerging technologies Engineering education Graph theory and computing High voltage engineering Information technology Instrumentation and measurement Microwave and RF Techniques Multimedia systems and applications Nanodevices, nanotec

  • 2008 International Conference on Electrical & Computer Engineering (ICECE)

    The topics of interest include but are not limited to: Biomedical engineering and bioinformatics Communication and wireless systems Control theory and applications Electronic and optoelectronic Materials and devices Electrical machines and drives High voltage engineering Information Technology Instrumentation and measurement Microwave and RF circuits and systems Multimedia systems and applications Nanotechnology and MEMS Networking Neural network and fuzzy logic Power systems and

  • 2006 International Conference on Electrical & Computer Engineering (ICECE)


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Periodicals related to MOSHFETs

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Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Microwave and Wireless Components Letters, IEEE

Published monthly with the purpose of providing fast publication of original and significant contributions relevant to all aspects of microwave/millimeter-wave technology. Emphasis is on devices, components, circuits, guided-wave structures, systems and applications covering the frequency spectrum from microwave and beyond, including submillimeter-waves and infrared.


Microwave Theory and Techniques, IEEE Transactions on

Microwave theory, techniques, and applications as they relate to components, devices, circuits, and systems involving the generation, transmission, and detection of microwaves.



Most published Xplore authors for MOSHFETs

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Xplore Articles related to MOSHFETs

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Low-Leakage-Current AlN/GaN MOSHFETs Using<formula formulatype="inline"><tex Notation="TeX">$ \hbox{Al}_{2}\hbox{O}_{3}$</tex></formula>for Increased 2DEG

IEEE Electron Device Letters, 2012

Metal-oxide-semiconductor heterostructure field effect transistors (MOSHFETs) were fabricated with an AlN/GaN heterostructure grown on Si substrates. A 7-nm Al2O3serving as both gate dielectric under the gate electrode and passivation layer in the access region was used. It was found that the Al2O3was superior to SiNxin increasing the 2-D electron gas (2DEG) density and thereby reducing the access resistance. In addition, ...


An E-Mode p-Channel GaN MOSHFET for a CMOS Compatible PMIC

IEEE Electron Device Letters, 2017

The operation principle of a low power E-mode p-channel GaN MOSHFET is explained via TCAD simulations. The challenges of achieving negative threshold voltage with the scaling of gate length are addressed by adjusting the mole fraction of an AlGaN cap layer beneath the gate. An inverter consisting of the proposed p-channel GaN MOSHFET with a gate length of 0.25 μm ...


Edge trapping mechanism of current collapse in III-N FETs

IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004., 2004

Simulations of GaN HFETs using the device simulator DESSIS show, in agreement with our experimental data, that enhanced trapping at both gate edges is responsible for the current collapse. These simulations also show a reduction of the collapse in DHFETs with an InGaN channel, in agreement with our gated transmission line measurements. The results demonstrate that hot electrons play an ...


Temperature-dependent of sub-threshold slope of AlGaN/GaN MOSHFETs with HfO<inf>2</inf>gate oxide prepared by ALD

2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM), 2016

The sub-threshold slope (SS) of AlGaN/GaN MOSHFETs with HfO2gate oxide prepared by Atomic Layer Deposition (ALD) were investigated. The different SS values, like as 290 mV/dec and 100 mV/dec for MOSHFETs with and w/o oxygen- plasma pre-treatment (PHf- and Hf-MOS) respectively, were estimated. The analysis were realized in temperature range from RT to 300°C. From SS, the average Dit, like ...


Comparison of AlGaN/GaN HFETs and MOSHFETs in prospect of oscillator design

The Eighth International Conference on Advanced Semiconductor Devices and Microsystems, 2010

The AlGaN/GaN heterostructure without oxide (HFET) and with additional aluminium oxide underneath the gate (MOSHFET) were investigated with regards to RF performance. Both cutoff frequency and maximum frequency of oscillation were measured and compared by means of small signal analyses and equivalent circuit parameter extraction. The maximum oscillation frequency fmaxis an important figure of merit because it is a defining ...


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Educational Resources on MOSHFETs

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IEEE.tv Videos

No IEEE.tv Videos are currently tagged "MOSHFETs"

IEEE-USA E-Books

  • Low-Leakage-Current AlN/GaN MOSHFETs Using<formula formulatype="inline"><tex Notation="TeX">$ \hbox{Al}_{2}\hbox{O}_{3}$</tex></formula>for Increased 2DEG

    Metal-oxide-semiconductor heterostructure field effect transistors (MOSHFETs) were fabricated with an AlN/GaN heterostructure grown on Si substrates. A 7-nm Al2O3serving as both gate dielectric under the gate electrode and passivation layer in the access region was used. It was found that the Al2O3was superior to SiNxin increasing the 2-D electron gas (2DEG) density and thereby reducing the access resistance. In addition, the off-state leakage current (_I_off) in these AlN/GaN MOSHFETs was reduced by four orders of magnitude to 7.6 × 10-5mA/mm as a result of the Al2O3gate dielectric, compared to that of AlN/GaN HFETs. Meanwhile, the subthreshold slope was improved to a nearly ideal value of 62 mV/dec because of the extremely low_I_off. The MOSHFETs with 1-μm gate length exhibited good DC characteristics. A maximum drain current of 745 mA/mm and a peak extrinsic transconductance of 280 mS/mm were achieved.

  • An E-Mode p-Channel GaN MOSHFET for a CMOS Compatible PMIC

    The operation principle of a low power E-mode p-channel GaN MOSHFET is explained via TCAD simulations. The challenges of achieving negative threshold voltage with the scaling of gate length are addressed by adjusting the mole fraction of an AlGaN cap layer beneath the gate. An inverter consisting of the proposed p-channel GaN MOSHFET with a gate length of 0.25 μm shows promise of a CMOS compatible power management IC in the megahertz range.

  • Edge trapping mechanism of current collapse in III-N FETs

    Simulations of GaN HFETs using the device simulator DESSIS show, in agreement with our experimental data, that enhanced trapping at both gate edges is responsible for the current collapse. These simulations also show a reduction of the collapse in DHFETs with an InGaN channel, in agreement with our gated transmission line measurements. The results demonstrate that hot electrons play an instrumental role in the collapse process.

  • Temperature-dependent of sub-threshold slope of AlGaN/GaN MOSHFETs with HfO<inf>2</inf>gate oxide prepared by ALD

    The sub-threshold slope (SS) of AlGaN/GaN MOSHFETs with HfO2gate oxide prepared by Atomic Layer Deposition (ALD) were investigated. The different SS values, like as 290 mV/dec and 100 mV/dec for MOSHFETs with and w/o oxygen- plasma pre-treatment (PHf- and Hf-MOS) respectively, were estimated. The analysis were realized in temperature range from RT to 300°C. From SS, the average Dit, like as 8.4×1012eV1cm-2and 1.5×1012eV-1cm-2for Hf-and PHf-MOS, respectively, were evaluated. The gate leakage current has a strong effect on the SS. The gate leakage were reduced about two orders of magnitude for PHf- MOS (~10-8A/mm at -10V) with oxygen-plasma pre-treatment. The improved SS obviously is also due to the large ION/IOFFratio (108). An increase of SS values with temperature, were found. However, the PHf-MOS have exhibited an approximately half angle of slope of SS with temperature (0,37mV/°C) than Hf- MOS (0,63mV/°C). As a result from SS the Ditfor PHf-MOS were reduced approximately five times.

  • Comparison of AlGaN/GaN HFETs and MOSHFETs in prospect of oscillator design

    The AlGaN/GaN heterostructure without oxide (HFET) and with additional aluminium oxide underneath the gate (MOSHFET) were investigated with regards to RF performance. Both cutoff frequency and maximum frequency of oscillation were measured and compared by means of small signal analyses and equivalent circuit parameter extraction. The maximum oscillation frequency fmaxis an important figure of merit because it is a defining factor for oscillator design. The cutoff frequency ft of the HFET with gate length of 300 nm resulted in 28 GHz and showed an increase up to 39 GHz for the MOSHFET device. The maximum frequency of oscillation fmaxshowed contrary behavior. The HFET showed an fmaxof 120 GHz, while the MOSHFET revealed a reduced RF performance of 78 GHz. RF simulations based on measured S-parameters indicated an increased gate drain capacitance Cgdfor devices with a dielectric layer underneath the gate metallization.

  • Technology related issues regarding fabrication of AlGaN/GaN-based MOSHFETs with GdScO3 as dielectric

    Starting out from our well established process for AlGaN/GaN HFETs, the authors discuss ways to enrich the process in order to fabricate metal-oxide- semiconductor HFETs (MOSHFETs) with a gadolinium scandate (GdScO<sub>3</sub>) insulation layer. In particular, adequate processing orders, various etching procedures and possible drawbacks of the GdScO<sub>3</sub> deposition process on ohmic contacts are discussed. Making use of the gained knowledge, the authors fabricated GdScO<sub>3</sub>-MOSHFETs for the first time. Compared to a conventional HFET the new device shows a higher saturation drain current and a lower gate leakage current. Nevertheless, the potential insulating properties of GdScO<sub>3</sub> are not fully exploited yet and further optimization of the deposition process is needed

  • RF characterization and modeling of AlGaN/GaN based HFETs and MOSHFETs

    An increased RF-performance of heterojunction field-effect transistor was found to be due to passivation and in addition a SiO<sub>2</sub> insulation underneath the gate metallization. This leads to an increase of cutoff frequency from 17 GHz up to 24 GHz for devices with 500 nm gate length. The RF output power increased from 4.1 to 6.7 W/mm at 7 GHz. RF simulation based on measured S-parameter showed a decrease of gate-source-capacitance and transconductance for devices with a dielectric layer underneath the gate metallization. The increase of the ratio gm/C<sub>gs</sub> of about 25% is in agreement with the measured cutoff frequency f<sub>t</sub>

  • Preparation and properties of AlGaN/GaN MOSHFETs with MOCVD Al2O3 as gate oxide

    The I-V and C-V measurements were used for characterization of AlGaN/GaN HFETs and MOSHFETs. Deposited Al<sub>2</sub>O<sub>31</sub> gate oxide yielded an increase of the sheet carrier density from 6.9times 10<sup>12</sup> to 7.25 times 1O<sup>12</sup> cm<sup>-2 </sup> and subsequent increase of the drain current density up to 40% and increase of the extrinsic transconductance up to 37%, respectively. The gate leakage current of 10<sup>-5</sup> A/mm at -10 V is about 3 orders of magnitude lower than that of HFETs. This results indicate the suitability of a thick Al<sub>2</sub>O<sub>3</sub> gate oxide for improvement of electronic properties of GaN-based MOSHFETs

  • Determination of the channel temperature in GaN MOSHFETs under microwave operational conditions

    In this work, we present a method to extract the device channel temperature of AlGaN/GaN metal-oxide-semiconductor hetero structure field effect transistors(MOSHFETs) in time domain under continuous wave (CW) and periodic- pulsed RF (radiation frequency) operational conditions. The temporal profiles of microwave output power densities of GaN MOSHFETs were measured at 2 GHz under such conditions and used for the extraction of the channel temperature. The measurement technique in this work is also being utilized to extract the thermal time constant of the devices. Analytical temporal solutions of temperature profile in MOSHFETs are provided to support the extraction method. The analytical solutions can also apply to generic field effect transistors (FETs) with an arbitrary form of time-dependent heat input at the top surface of the wafer.

  • Large periphery high-power AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC with oxide-bridging

    We report on AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor (HFET) over SiC substrates with peripheries from 0.15 to 6 mm. These multigate devices with source interconnections were fabricated using a novel oxide-bridging approach. The saturation current was as high as 5.1 A for a 6 mm wide device with a gate leakage of 1 μA/cm2for 1.5 μm gate length in a 5 μm source-drain opening. The cutoff frequency of around 8 GHz was practically independent of the device periphery. Large-signal output rf-power as high as 2.88 W/mm was measured at 2 GHz. Both the saturation current and the rf-power scaled nearly linearly with the gate width.



Standards related to MOSHFETs

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