Conferences related to MODFET integrated circuits

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2020 IEEE Applied Power Electronics Conference and Exposition (APEC)

APEC focuses on the practical and applied aspects of the power electronics business. Not just a power designer’s conference, APEC has something of interest for anyone involved in power electronics including:- Equipment OEMs that use power supplies and converters in their equipment- Designers of power supplies, dc-dc converters, motor drives, uninterruptable power supplies, inverters and any other power electronic circuits, equipments and systems- Manufacturers and suppliers of components and assemblies used in power electronics- Manufacturing, quality and test engineers involved with power electronics equipment- Marketing, sales and anyone involved in the business of power electronic- Compliance engineers testing and qualifying power electronics equipment or equipment that uses power electronics


2020 IEEE Energy Conversion Congress and Exposition (ECCE)

IEEE-ECCE 2020 brings together practicing engineers, researchers, entrepreneurs and other professionals for interactive and multi-disciplinary discussions on the latest advances in energy conversion technologies. The Conference provides a unique platform for promoting your organization.

  • 2019 IEEE Energy Conversion Congress and Exposition (ECCE)

    IEEE-ECCE 2019 brings together practicing engineers, researchers, entrepreneurs and other professionals for interactive and multi-disciplinary discussions on the latest advances in energy conversion technologies. The Conference provides a unique platform for promoting your organization.

  • 2018 IEEE Energy Conversion Congress and Exposition (ECCE)

    The scope of ECCE 2018 includes all technical aspects of research, design, manufacture, application and marketing of devices, components, circuits and systems related to energyconversion, industrial power and power electronics.

  • 2017 IEEE Energy Conversion Congress and Exposition (ECCE)

    ECCE is the premier global conference covering topics in energy conversion from electric machines, power electronics, drives, devices and applications both existing and emergent

  • 2016 IEEE Energy Conversion Congress and Exposition (ECCE)

    The Energy Conversion Congress and Exposition (ECCE) is focused on research and industrial advancements related to our sustainable energy future. ECCE began as a collaborative effort between two societies within the IEEE: The Power Electronics Society (PELS) and the Industrial Power Conversion Systems Department (IPCSD) of the Industry Application Society (IAS) and has grown to the premier conference to discuss next generation technologies.

  • 2015 IEEE Energy Conversion Congress and Exposition

    The scope of ECCE 2015 includes all technical aspects of research, design, manufacture, application and marketing of devices, components, circuits and systems related to energy conversion, industrial power and power electronics.

  • 2014 IEEE Energy Conversion Congress and Exposition (ECCE)

    Those companies who have an interest in selling to: research engineers, application engineers, strategists, policy makers, and innovators, anyone with an interest in energy conversion systems and components.

  • 2013 IEEE Energy Conversion Congress and Exposition (ECCE)

    The scope of the congress interests include all technical aspects of the design, manufacture, application and marketing of devices, components, circuits and systems related to energy conversion, industrial power conversion and power electronics.

  • 2012 IEEE Energy Conversion Congress and Exposition (ECCE)

    The IEEE Energy Conversion Congress and Exposition (ECCE) will be held in Raleigh, the capital of North Carolina. This will provide a forum for the exchange of information among practicing professionals in the energy conversion business. This conference will bring together users and researchers and will provide technical insight as well.

  • 2011 IEEE Energy Conversion Congress and Exposition (ECCE)

    IEEE 3rd Energy Conversion Congress and Exposition follows the inagural event held in San Jose, CA in 2009 and 2nd meeting held in Atlanta, GA in 2010 as the premier conference dedicated to all aspects of energy processing in industrial, commercial, transportation and aerospace applications. ECCE2011 has a strong empahasis on renewable energy sources and power conditioning, grid interactions, power quality, storage and reliability.

  • 2010 IEEE Energy Conversion Congress and Exposition (ECCE)

    This conference covers all areas of electrical and electromechanical energy conversion. This includes power electrics, power semiconductors, electric machines and drives, components, subsystems, and applications of energy conversion systems.

  • 2009 IEEE Energy Conversion Congress and Exposition (ECCE)

    The scope of the conference include all technical aspects of the design, manufacture, application and marketing of devices, circuits, and systems related to electrical energy conversion technology


2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2020 IEEE/MTT-S International Microwave Symposium (IMS)

The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2036 IEEE/MTT-S International Microwave Symposium - IMS 2036

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2031 IEEE/MTT-S International Microwave Symposium - IMS 2031

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2029 IEEE/MTT-S International Microwave Symposium - IMS 2029

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2026 IEEE/MTT-S International Microwave Symposium - IMS 2026

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2025 IEEE/MTT-S International Microwave Symposium - IMS 2025

    The IEEE International Microwave Symposium (IMS) is the world s foremost conferencecovering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies;encompassing everything from basic technologies to components to systems including thelatest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulationand more. The IMS includes technical and interactive sessions, exhibits, student competitions,panels, workshops, tutorials, and networking events.

  • 2024 IEEE/MTT-S International Microwave Symposium - IMS 2024

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2021 IEEE/MTT-S International Microwave Symposium - IMS 2021

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.

  • 2019 IEEE/MTT-S International Microwave Symposium - IMS 2019

    Comprehensive symposium on microwave theory and techniques including active and passive circuit components, theory and microwave systems.

  • 2018 IEEE/MTT-S International Microwave Symposium - IMS 2018

    Microwave theory and techniques, RF/microwave/millimeter-wave/terahertz circuit design and fabrication technology, radio/wireless communication.

  • 2017 IEEE/MTT-S International Microwave Symposium - IMS 2017

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.

  • 2016 IEEE/MTT-S International Microwave Symposium - IMS 2016

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2015 IEEE/MTT-S International Microwave Symposium - MTT 2015

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics. The IMS includes technical sessions, both oral and interactive, worksh

  • 2014 IEEE/MTT-S International Microwave Symposium - MTT 2014

    IMS2014 will cover developments in microwave technology from nano devices to system applications. Technical paper sessions, interactive forums, plenary and panel sessions, workshops, short courses, industrial exhibits, and a wide array of other technical activities will be offered.

  • 2013 IEEE/MTT-S International Microwave Symposium - MTT 2013

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter -wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2012 IEEE/MTT-S International Microwave Symposium - MTT 2012

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2011 IEEE/MTT-S International Microwave Symposium - MTT 2011

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2010 IEEE/MTT-S International Microwave Symposium - MTT 2010

    Reports of research and development at the state-of-the-art of the theory and techniques related to the technology and applications of devices, components, circuits, modules and systems in the RF, microwave, millimeter-wave, submillimeter-wave and Terahertz ranges of the electromagnetic spectrum.

  • 2009 IEEE/MTT-S International Microwave Symposium - MTT 2009

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2008 IEEE/MTT-S International Microwave Symposium - MTT 2008

  • 2007 IEEE/MTT-S International Microwave Symposium - MTT 2007

  • 2006 IEEE/MTT-S International Microwave Symposium - MTT 2006

  • 2005 IEEE/MTT-S International Microwave Symposium - MTT 2005

  • 2004 IEEE/MTT-S International Microwave Symposium - MTT 2004

  • 2003 IEEE/MTT-S International Microwave Symposium - MTT 2003

  • 2002 IEEE/MTT-S International Microwave Symposium - MTT 2002

  • 2001 IEEE/MTT-S International Microwave Symposium - MTT 2001

  • 2000 IEEE/MTT-S International Microwave Symposium - MTT 2000

  • 1999 IEEE/MTT-S International Microwave Symposium - MTT '99

  • 1998 IEEE/MTT-S International Microwave Symposium - MTT '98

  • 1997 IEEE/MTT-S International Microwave Symposium - MTT '97

  • 1996 IEEE/MTT-S International Microwave Symposium - MTT '96


2019 Compound Semiconductor Week (CSW)

CSW2019 covers all aspects of compound semiconductors – including growth, processing, devices, physics, spintronics, quantum information, MEMS/NEMS, sensors, solar cells, and novel applications. The conference deals with III-V compounds such as GaAs, InP, and GaN; II-VI compounds such as ZnSe and ZnS; carbon related materials; oxide semiconductors; organic semiconductors etc.


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Periodicals related to MODFET integrated circuits

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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Biomedical Circuits and Systems, IEEE Transactions on

The Transactions on Biomedical Circuits and Systems addresses areas at the crossroads of Circuits and Systems and Life Sciences. The main emphasis is on microelectronic issues in a wide range of applications found in life sciences, physical sciences and engineering. The primary goal of the journal is to bridge the unique scientific and technical activities of the Circuits and Systems ...


Biomedical Engineering, IEEE Reviews in

The IEEE Reviews in Biomedical Engineering will review the state-of-the-art and trends in the emerging field of biomedical engineering. This includes scholarly works, ranging from historic and modern development in biomedical engineering to the life sciences and medicine enabled by technologies covered by the various IEEE societies.


Circuits and Systems II: Express Briefs, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


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Most published Xplore authors for MODFET integrated circuits

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Xplore Articles related to MODFET integrated circuits

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0-90 GHz InAlAs/InGaAs/InP HEMT distributed baseband amplifier IC

Electronics Letters, 1995

An InAlAs/InGaAs/InP HEMT distributed baseband amplifier IC that uses a new loss compensation technique for the drain artificial line is described. The amplifier IC has a gain of 10 dB with a 0-90 GHz bandwidth. This is the widest bandwidth among all reported baseband ICs to date.<<ETX>>


30 GHz static frequency divider using a 0.2 /spl mu/m AlGaAs/GaAs/AlGaAs HEMT technology

Electronics Letters, 1995

A frequency divider chip based on AlGaAs/GaAs/AlGaAs quantum well FETs with 0.2 /spl mu/m gate length has been developed and fabricated. The divider can be operated up to 30 GHz with a single-ended input signal at an input resistance of 50 /spl Omega/. The output signals are differential with both internal load resistances at 50 /spl Omega/.


12 GHz low-noise MMIC amplifier designed with a noise model-that scales with MODFET size and bias

IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers, 1993

A scalable, bias-dependent FET noise model developed for monolithic microwave integrated circuit (MMIC) design is discussed. A three-stage, 12-GHz MMIC low- noise amplifier (LNA) designed with the model is described. The LNA has a 1.6-dB noise figure and 25.6-dB gain. Lumped elements were used to design an LNA that was significantly smaller per stage (0.31 mm/sup 2/) than previous MMIC ...


Room temperature dynamic memories for GaAs integrated circuits

1987 International Electron Devices Meeting, 1987

This paper describes PN-junction-based, majority-carrier cells for GaAs dynamic memories. Capacitance recovery measurements on simple test structures indicate room-temperature storage times of 3 minutes and 1.5 hours for cells fabricated in GaAs or Al<inf>0.2</inf>Ga<inf>0.8</inf>As, respectively. Punchthrough-isolated and direct-access cell configurations are discussed.


17 GHz broadband amplifier with 25 dB gain using a 0.3 /spl mu/m AlGaAs/GaAs/AlGaAs HEMT technology

Electronics Letters, 1995

A broadband amplifier chip based on AlGaAs/GaAs/AlGaAs quantum well FETs with 0.3 /spl mu/m gate length has been designed and fabricated. The amplifier can be operated with single-ended or differential inputs with an input resistance of 50 /spl Omega/. The output signals are differential with both internal load resistances at 100 /spl Omega/, the chip area is 1/spl times/1 mm/sup ...


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Educational Resources on MODFET integrated circuits

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IEEE-USA E-Books

  • 0-90 GHz InAlAs/InGaAs/InP HEMT distributed baseband amplifier IC

    An InAlAs/InGaAs/InP HEMT distributed baseband amplifier IC that uses a new loss compensation technique for the drain artificial line is described. The amplifier IC has a gain of 10 dB with a 0-90 GHz bandwidth. This is the widest bandwidth among all reported baseband ICs to date.<<ETX>>

  • 30 GHz static frequency divider using a 0.2 /spl mu/m AlGaAs/GaAs/AlGaAs HEMT technology

    A frequency divider chip based on AlGaAs/GaAs/AlGaAs quantum well FETs with 0.2 /spl mu/m gate length has been developed and fabricated. The divider can be operated up to 30 GHz with a single-ended input signal at an input resistance of 50 /spl Omega/. The output signals are differential with both internal load resistances at 50 /spl Omega/.

  • 12 GHz low-noise MMIC amplifier designed with a noise model-that scales with MODFET size and bias

    A scalable, bias-dependent FET noise model developed for monolithic microwave integrated circuit (MMIC) design is discussed. A three-stage, 12-GHz MMIC low- noise amplifier (LNA) designed with the model is described. The LNA has a 1.6-dB noise figure and 25.6-dB gain. Lumped elements were used to design an LNA that was significantly smaller per stage (0.31 mm/sup 2/) than previous MMIC LNAs.<<ETX>>

  • Room temperature dynamic memories for GaAs integrated circuits

    This paper describes PN-junction-based, majority-carrier cells for GaAs dynamic memories. Capacitance recovery measurements on simple test structures indicate room-temperature storage times of 3 minutes and 1.5 hours for cells fabricated in GaAs or Al<inf>0.2</inf>Ga<inf>0.8</inf>As, respectively. Punchthrough-isolated and direct-access cell configurations are discussed.

  • 17 GHz broadband amplifier with 25 dB gain using a 0.3 /spl mu/m AlGaAs/GaAs/AlGaAs HEMT technology

    A broadband amplifier chip based on AlGaAs/GaAs/AlGaAs quantum well FETs with 0.3 /spl mu/m gate length has been designed and fabricated. The amplifier can be operated with single-ended or differential inputs with an input resistance of 50 /spl Omega/. The output signals are differential with both internal load resistances at 100 /spl Omega/, the chip area is 1/spl times/1 mm/sup 2/, and the power consumption is /spl sim/375 mW.

  • Monolithic GaAs W-band pseudomorphic MODFET amplifiers

    A unique realization of a single-stage monolithic GaAs W-band amplifier based on InGaAs-AlGaAs pseudomorphic (PM) MODFET devices is reported. This work reflects a number of significant accomplishments: (1) superior control of MBE to grow the PM layers, (2) well-developed electron-beam 0.1 mu m mushroom-gate technology, (3) reliable physical and equivalent-circuit models of device behavior, (4) layouts that minimize parasitics, and (5) a dual-medium circuit approach consisting of coplanar waveguide (CPW) and microstrip on opposite faces of a 100 mu m-thick GaAs substrate. A peak gain of 4.5 dB at 92 GHz for one of the amplifiers was achieved. The measured gain is in good agreement with the model predictions.<>

  • 10 and 20 Gbit/s clock recovery GaAs IC with 288/spl deg/ phase-shifting function

    A 10 and 20 Gbit/s clock recovery IC with 180/spl deg/ switched and 288/spl deg/ continuously variable phase-shifting function has been realised using 0.2/0.3 /spl mu/m HEMT technology. The recovered clock signal has a time jitter of 2 ps at 10 GHz. The 2/spl times/1.5 mm/sup 2/ IC needs 300 mW DC power at -3.3 V supply.

  • Linear circuit design-a multistage low noise amplifier

    Accurate characterisation and modelling of the active devices is a prerequisite for successful amplifier design. Scalable S-parameter and noise models for FET's are investigated. Based on the results of the standard single gate FET, a modelling approach for devices in cascode configuration is presented which was validated up to W-band. An equivalent circuit based temperature noise model is proposed which can be successfully used for the design and simulation of MM-wave low noise amplifiers. To illustrate millimetre wave amplifier design techniques, a 2-stage cascode W-band amplifier with 20 dB gain at 110 GHz fabricated at FhG-IAF is discussed.

  • A monolithic 1 to 50 GHz distributed amplifier with 20 dBm output power

    A monolithic 1 to 50 GHz distributed amplifier has been developed using a MODFET IC process to demonstrate a saturated power in excess of 20 dBm. The power output at the -1 dB gain compression point is greater than 18 dBm across the frequency range. The small signal gain is 8.5 dB+or-0.3 dB, and both input and output return loss are less than -10 dB. Physical layout considerations placed constraints on the design that resulted in a compromise between gain, RF voltage drive, and gain flatness.<<ETX>>

  • Low power data decision IC for 20-40 Gbit/s data links using 0.2 /spl mu/m AlGaAs/GaAs HEMTs

    A decision IC for optical data links at bit rates of 20-40 Gbit/s has been realised by using 0.2 /spl mu/m AlGaAs/GaAs HEMT technology and tested on- wafer at bit rates up to 25 Gbit/s. The IC can be operated with a supply from /spl sim/3.3 to 5.2 V and a DC current of /spl sim/50 mA.



Standards related to MODFET integrated circuits

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Jobs related to MODFET integrated circuits

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