Conferences related to MODFET circuits

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2020 IEEE Energy Conversion Congress and Exposition (ECCE)

IEEE-ECCE 2020 brings together practicing engineers, researchers, entrepreneurs and other professionals for interactive and multi-disciplinary discussions on the latest advances in energy conversion technologies. The Conference provides a unique platform for promoting your organization.

  • 2009 IEEE Energy Conversion Congress and Exposition (ECCE)

    The scope of the conference include all technical aspects of the design, manufacture, application and marketing of devices, circuits, and systems related to electrical energy conversion technology

  • 2010 IEEE Energy Conversion Congress and Exposition (ECCE)

    This conference covers all areas of electrical and electromechanical energy conversion. This includes power electrics, power semiconductors, electric machines and drives, components, subsystems, and applications of energy conversion systems.

  • 2011 IEEE Energy Conversion Congress and Exposition (ECCE)

    IEEE 3rd Energy Conversion Congress and Exposition follows the inagural event held in San Jose, CA in 2009 and 2nd meeting held in Atlanta, GA in 2010 as the premier conference dedicated to all aspects of energy processing in industrial, commercial, transportation and aerospace applications. ECCE2011 has a strong empahasis on renewable energy sources and power conditioning, grid interactions, power quality, storage and reliability.

  • 2012 IEEE Energy Conversion Congress and Exposition (ECCE)

    The IEEE Energy Conversion Congress and Exposition (ECCE) will be held in Raleigh, the capital of North Carolina. This will provide a forum for the exchange of information among practicing professionals in the energy conversion business. This conference will bring together users and researchers and will provide technical insight as well.

  • 2013 IEEE Energy Conversion Congress and Exposition (ECCE)

    The scope of the congress interests include all technical aspects of the design, manufacture, application and marketing of devices, components, circuits and systems related to energy conversion, industrial power conversion and power electronics.

  • 2014 IEEE Energy Conversion Congress and Exposition (ECCE)

    Those companies who have an interest in selling to: research engineers, application engineers, strategists, policy makers, and innovators, anyone with an interest in energy conversion systems and components.

  • 2015 IEEE Energy Conversion Congress and Exposition

    The scope of ECCE 2015 includes all technical aspects of research, design, manufacture, application and marketing of devices, components, circuits and systems related to energy conversion, industrial power and power electronics.

  • 2016 IEEE Energy Conversion Congress and Exposition (ECCE)

    The Energy Conversion Congress and Exposition (ECCE) is focused on research and industrial advancements related to our sustainable energy future. ECCE began as a collaborative effort between two societies within the IEEE: The Power Electronics Society (PELS) and the Industrial Power Conversion Systems Department (IPCSD) of the Industry Application Society (IAS) and has grown to the premier conference to discuss next generation technologies.

  • 2017 IEEE Energy Conversion Congress and Exposition (ECCE)

    ECCE is the premier global conference covering topics in energy conversion from electric machines, power electronics, drives, devices and applications both existing and emergent

  • 2018 IEEE Energy Conversion Congress and Exposition (ECCE)

    The scope of ECCE 2018 includes all technical aspects of research, design, manufacture, application and marketing of devices, components, circuits and systems related to energyconversion, industrial power and power electronics.

  • 2019 IEEE Energy Conversion Congress and Exposition (ECCE)

    IEEE-ECCE 2019 brings together practicing engineers, researchers, entrepreneurs and other professionals for interactive and multi-disciplinary discussions on the latest advances in energy conversion technologies. The Conference provides a unique platform for promoting your organization.


2020 IEEE/MTT-S International Microwave Symposium (IMS)

The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 1996 IEEE/MTT-S International Microwave Symposium - MTT '96

  • 1997 IEEE/MTT-S International Microwave Symposium - MTT '97

  • 1998 IEEE/MTT-S International Microwave Symposium - MTT '98

  • 1999 IEEE/MTT-S International Microwave Symposium - MTT '99

  • 2000 IEEE/MTT-S International Microwave Symposium - MTT 2000

  • 2001 IEEE/MTT-S International Microwave Symposium - MTT 2001

  • 2002 IEEE/MTT-S International Microwave Symposium - MTT 2002

  • 2003 IEEE/MTT-S International Microwave Symposium - MTT 2003

  • 2004 IEEE/MTT-S International Microwave Symposium - MTT 2004

  • 2005 IEEE/MTT-S International Microwave Symposium - MTT 2005

  • 2006 IEEE/MTT-S International Microwave Symposium - MTT 2006

  • 2007 IEEE/MTT-S International Microwave Symposium - MTT 2007

  • 2008 IEEE/MTT-S International Microwave Symposium - MTT 2008

  • 2009 IEEE/MTT-S International Microwave Symposium - MTT 2009

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2010 IEEE/MTT-S International Microwave Symposium - MTT 2010

    Reports of research and development at the state-of-the-art of the theory and techniques related to the technology and applications of devices, components, circuits, modules and systems in the RF, microwave, millimeter-wave, submillimeter-wave and Terahertz ranges of the electromagnetic spectrum.

  • 2011 IEEE/MTT-S International Microwave Symposium - MTT 2011

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2012 IEEE/MTT-S International Microwave Symposium - MTT 2012

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2013 IEEE/MTT-S International Microwave Symposium - MTT 2013

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter -wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2014 IEEE/MTT-S International Microwave Symposium - MTT 2014

    IMS2014 will cover developments in microwave technology from nano devices to system applications. Technical paper sessions, interactive forums, plenary and panel sessions, workshops, short courses, industrial exhibits, and a wide array of other technical activities will be offered.

  • 2015 IEEE/MTT-S International Microwave Symposium - MTT 2015

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics. The IMS includes technical sessions, both oral and interactive, worksh

  • 2016 IEEE/MTT-S International Microwave Symposium - IMS 2016

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2017 IEEE/MTT-S International Microwave Symposium - IMS 2017

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.

  • 2018 IEEE/MTT-S International Microwave Symposium - IMS 2018

    Microwave theory and techniques, RF/microwave/millimeter-wave/terahertz circuit design and fabrication technology, radio/wireless communication.

  • 2019 IEEE/MTT-S International Microwave Symposium - IMS 2019

    Comprehensive symposium on microwave theory and techniques including active and passive circuit components, theory and microwave systems.

  • 2021 IEEE/MTT-S International Microwave Symposium - IMS 2021

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.

  • 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2024 IEEE/MTT-S International Microwave Symposium - IMS 2024

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2025 IEEE/MTT-S International Microwave Symposium - IMS 2025

    The IEEE International Microwave Symposium (IMS) is the world s foremost conferencecovering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies;encompassing everything from basic technologies to components to systems including thelatest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulationand more. The IMS includes technical and interactive sessions, exhibits, student competitions,panels, workshops, tutorials, and networking events.

  • 2026 IEEE/MTT-S International Microwave Symposium - IMS 2026

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2029 IEEE/MTT-S International Microwave Symposium - IMS 2029

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2031 IEEE/MTT-S International Microwave Symposium - IMS 2031

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2036 IEEE/MTT-S International Microwave Symposium - IMS 2036

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.


2020 IEEE International Symposium on Circuits and Systems (ISCAS)

The International Symposium on Circuits and Systems (ISCAS) is the flagship conference of the IEEE Circuits and Systems (CAS) Society and the world’s premier networking and exchange forum for researchers in the highly active fields of theory, design and implementation of circuits and systems. ISCAS2020 focuses on the deployment of CASS knowledge towards Society Grand Challenges and highlights the strong foundation in methodology and the integration of multidisciplinary approaches which are the distinctive features of CAS contributions. The worldwide CAS community is exploiting such CASS knowledge to change the way in which devices and circuits are understood, optimized, and leveraged in a variety of systems and applications.


2020 IEEE Applied Power Electronics Conference and Exposition (APEC)

APEC focuses on the practical and applied aspects of the power electronics business. Not just a power designer’s conference, APEC has something of interest for anyone involved in power electronics including:- Equipment OEMs that use power supplies and converters in their equipment- Designers of power supplies, dc-dc converters, motor drives, uninterruptable power supplies, inverters and any other power electronic circuits, equipments and systems- Manufacturers and suppliers of components and assemblies used in power electronics- Manufacturing, quality and test engineers involved with power electronics equipment- Marketing, sales and anyone involved in the business of power electronic- Compliance engineers testing and qualifying power electronics equipment or equipment that uses power electronics


2019 Compound Semiconductor Week (CSW)

CSW2019 covers all aspects of compound semiconductors – including growth, processing, devices, physics, spintronics, quantum information, MEMS/NEMS, sensors, solar cells, and novel applications. The conference deals with III-V compounds such as GaAs, InP, and GaN; II-VI compounds such as ZnSe and ZnS; carbon related materials; oxide semiconductors; organic semiconductors etc.



Periodicals related to MODFET circuits

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Circuits and Systems I: Regular Papers, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.



Most published Xplore authors for MODFET circuits

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Xplore Articles related to MODFET circuits

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Low-temperature buffer GaAs MESFET technology for high-speed integrated circuit applications

IEEE Electron Device Letters, 1989

The fabrication of high-performance digital integrated circuits with low- temperature buffer (LTB) GaAs MESFET technology is presented. Individual 0.2- mu m-gate-length transistors show a g/sub m/ of 600 mS/mm and an extrapolated f/sub T/ of 80 GHz. Backgating and light sensitivity are eliminated with the LTB technology. Static source-coupled FET logic frequency dividers exhibit a maximum clock rate of 22 ...


A 1-chip RF transceiver MMIC for ETC with surface via-hole isolation technique

2001 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium (IEEE Cat. No.01CH37173), 2001

An RF Transmitter Receiver MMIC (TX-RX MMIC) with 16-pin plastic package has been developed for 5.8 GHz Japanese Electronic Toll Collection system (ETC). The MMIC contains following RF blocks; local buffer amplifier, variable attenuator, ASK modulator, power amplifier, low-noise amplifier, down- converter, local switch and antenna switch. We have developed the new Surface Via-Hole (SVH) isolation technique to integrate all ...


A New Approach to Nonlinear Modelling and Simulation of MESFETs and MODFETs

1990 20th European Microwave Conference, 1990

A new method for the derivation of a FET-equivalent-circuit for large- and small-signal applications is presented. The model consists of nine bias- dependent intrinsic elements additionally eight linear extrinsic elements. All circuit-elements are determined from measured DC- and scattering-parameters with an analytical method at any bias-condition. The nonlinear behaviour of the intrinsic elements are expressed using two-dimensional spline-functions. The large-signal ...


Digital dynamic frequency dividers for broadband application up to 60 GHz

15th Annual GaAs IC Symposium, 1993

A broadband dynamic frequency divider based on pseudomorphic Al/sub 0.2/Ga/sub 0.8/As/In/sub 0.25/Ga/sub 0.75/As MODFETs and passive loads is presented. Stable operation from 28 GHz up to 51 GHz with a power consumption of 440 mW could be shown. SPICE network simulation predicts operation in the 35 GHz - 60 GHz range for a divider circuit using an advanced E/D AlGaAs/InGaAs ...


Low noise AlGaN/GaN MODFETs with high breakdown and power characteristics

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191), 2001

AlGaN/GaN MODFETs (0.25/spl times/200 /spl mu/m/sup 2/) with low noise, high breakdown and power characteristics have been evaluated. A noise figure of 1.9 dB with 16.2 dB associated gain was obtained at a quiescent point of I/sub DS/=30 mA. and V/sub DS/=10 at 10 GHz. The maximum power measured was 22.9 dBm (/spl sim/1 W/mrn) and PAE was 21.9% at ...



Educational Resources on MODFET circuits

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IEEE-USA E-Books

  • Low-temperature buffer GaAs MESFET technology for high-speed integrated circuit applications

    The fabrication of high-performance digital integrated circuits with low- temperature buffer (LTB) GaAs MESFET technology is presented. Individual 0.2- mu m-gate-length transistors show a g/sub m/ of 600 mS/mm and an extrapolated f/sub T/ of 80 GHz. Backgating and light sensitivity are eliminated with the LTB technology. Static source-coupled FET logic frequency dividers exhibit a maximum clock rate of 22 GHz.<<ETX>>

  • A 1-chip RF transceiver MMIC for ETC with surface via-hole isolation technique

    An RF Transmitter Receiver MMIC (TX-RX MMIC) with 16-pin plastic package has been developed for 5.8 GHz Japanese Electronic Toll Collection system (ETC). The MMIC contains following RF blocks; local buffer amplifier, variable attenuator, ASK modulator, power amplifier, low-noise amplifier, down- converter, local switch and antenna switch. We have developed the new Surface Via-Hole (SVH) isolation technique to integrate all RF circuits into single chip. The double hetero-junction modulation doped FETs (MODFETs) and SrTiO/sub 3/ (STO) MIM capacitors are also developed to realize a single voltage operation and small chip size. By using SVH isolation technique, low carrier leakage of -43 dBm, high on/off ratio of 39.6 dB at 5.84 GHz and low total current of 150 mA are achieved, and the practical small chip size (2.25/spl times/1.25 mm/sup 2/) is realized.

  • A New Approach to Nonlinear Modelling and Simulation of MESFETs and MODFETs

    A new method for the derivation of a FET-equivalent-circuit for large- and small-signal applications is presented. The model consists of nine bias- dependent intrinsic elements additionally eight linear extrinsic elements. All circuit-elements are determined from measured DC- and scattering-parameters with an analytical method at any bias-condition. The nonlinear behaviour of the intrinsic elements are expressed using two-dimensional spline-functions. The large-signal simulation considers all nonlinear intrinsic elements including the Schottky-diodes and the gate-drain avalanche breakdown.

  • Digital dynamic frequency dividers for broadband application up to 60 GHz

    A broadband dynamic frequency divider based on pseudomorphic Al/sub 0.2/Ga/sub 0.8/As/In/sub 0.25/Ga/sub 0.75/As MODFETs and passive loads is presented. Stable operation from 28 GHz up to 51 GHz with a power consumption of 440 mW could be shown. SPICE network simulation predicts operation in the 35 GHz - 60 GHz range for a divider circuit using an advanced E/D AlGaAs/InGaAs MODFET process.<<ETX>>

  • Low noise AlGaN/GaN MODFETs with high breakdown and power characteristics

    AlGaN/GaN MODFETs (0.25/spl times/200 /spl mu/m/sup 2/) with low noise, high breakdown and power characteristics have been evaluated. A noise figure of 1.9 dB with 16.2 dB associated gain was obtained at a quiescent point of I/sub DS/=30 mA. and V/sub DS/=10 at 10 GHz. The maximum power measured was 22.9 dBm (/spl sim/1 W/mrn) and PAE was 21.9% at 8.4 GHz at the same bias condition. In addition, a maximum breakdown voltage (V/sub BD/) of /spl sim/115 V at I/sub D/=20 /spl mu/A and I/sub G//spl sim/30 /spl mu/A was measured. A MODFET noise model and its correlation with gate leakage current are also investigated.

  • Modeling of transverse propagation delays in the GaAs/AlGaAs modulation doped heterojunction field effect transistors

    A computer-efficient algorithm to calculate the transverse propagation delays in a GaAs/AlGaAs modulation-doped FET (MODFET) is discussed. The model includes the intrinsic as well as the extrinsic parameters of the MODFET. The dependences of these delays on the various MODFET parameters such as its gate length and width and the gate metal resistivity have been studied.<<ETX>>

  • A 10-GHz bandwidth pseudomorphic GaAs/InGaAs/AlGaAs MODFET-based OEIC receiver

    High-performance quarter-micrometer pseudomorphic modulation-doped field- effect transistors (MODFETs) and a metal-semiconductor-metal (MSM) photodetector have been used in the design of a 0.85- mu m wavelength sensitive high-speed OEIC (optoelectronic integrated circuit) lightwave receiver. The receiver circuit utilizes a transimpedance amplifier topology with all active components including a variable active feedback resistor consisting of a common-gate FET. Discrete MODFETs with -0.7-V thresholds exhibit transconductances of over 500 mS/mm and f/sub T/s of approximately 70 GHz. Receiver transimpedance gains (Z/sub T/) from 200 to 1500 Omega are obtained by varying the active feedback resistor. An amplifier 3-dB analog bandwidth of 10 GHz is measured with a maximally flat Z/sub T/ response of 300 Omega , resulting in a transimpedance-bandwidth product of 3 THz- Omega . The receiver frequency response, deduced from optical pulse measurements, confirms a 10-GHz bandwidth and indicates that the receiver is suitable for unequalized 18-Gb/s NRZ communications.

  • Ion-Implanted Self-Aligned-Gate Quantum-well Heterostructure FETs

    None

  • Anomalies in MODFET's with a low-temperature buffer

    GaAs buffer layers grown by molecular-beam epitaxy (MBE) at low temperatures (200-300 degrees C) have been successfully used to reduce sidegating in both MESFETs and MODFETs. There are, however, high concentrations of defects in the low-temperature (LT) buffers that adversely affect the high-frequency performance of precision analog and certain digital circuits. In unoptimized structures, nanosecond and microsecond transients are as large as 85 and 15% of the total voltage swing, respectively. These transients cause various detrimental effects in circuits. These effects are described. Their origin is attributed to the outdiffusion of defects from the LT buffer, and a method for optimizing the device structure for minimum sidegating and maximum high- frequency performance is presented.<<ETX>>

  • Microstrip quarter-wave high voltage DC block

    A microstrip high voltage DC block is presented. Silicon rubber is used to insulate a quarter-wave coupler and the resulting effective dielectric constant and impedance are discussed. DC isolation up to 4500 V is achieved.<<ETX>>



Standards related to MODFET circuits

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No standards are currently tagged "MODFET circuits"