Conferences related to MOCVD

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2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2020 IEEE International Magnetic Conference (INTERMAG)

INTERMAG is the premier conference on all aspects of applied magnetism and provides a range of oral and poster presentations, invited talks and symposia, a tutorial session, and exhibits reviewing the latest developments in magnetism.


2020 IEEE Photovoltaic Specialists Conference (PVSC)

Promote science and engineering of photovoltaic materials, devices, systems and applications


2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)

Ferroelectric materials and applications


2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)

The world's premiere conference in MEMS sensors, actuators and integrated micro and nano systems welcomes you to attend this four-day event showcasing major technological, scientific and commercial breakthroughs in mechanical, optical, chemical and biological devices and systems using micro and nanotechnology.The major areas of activity in the development of Transducers solicited and expected at this conference include but are not limited to: Bio, Medical, Chemical, and Micro Total Analysis Systems Fabrication and Packaging Mechanical and Physical Sensors Materials and Characterization Design, Simulation and Theory Actuators Optical MEMS RF MEMS Nanotechnology Energy and Power


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Periodicals related to MOCVD

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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Control Systems Technology, IEEE Transactions on

Serves as a compendium for papers on the technological advances in control engineering and as an archival publication which will bridge the gap between theory and practice. Papers will highlight the latest knowledge, exploratory developments, and practical applications in all aspects of the technology needed to implement control systems from analysis and design through simulation and hardware.


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


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Xplore Articles related to MOCVD

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Characterization of Inter-Poly High- κ Dielectrics for Next Generation Stacked-Gate Flash Memories

2006 IEEE Conference on Emerging Technologies - Nanoelectronics, 2006

In this paper, the inter-poly dielectric (IPD) thickness, scaling, and reliability characteristics of Al2O3and HfO2IPDs are studied, which are then compared with TEOS IPD. Regardless of deposition tools, drastically leakage current reduction and reliability improvements have been demonstrated by replacing TEOS IPD with high-permittivity (high-κ) IPDs, which are suitable for mass production applications in the future. Moreover, MOCVD deposition can ...


A GaInP/GaAs HBT with a selective buried sub-collector layer grown by MOCVD

1996 54th Annual Device Research Conference Digest, 1996

Summary form only given. Extrinsic base-collector capacitance under the base ohmic contact region is often a large portion of the total collector capacitance which degrades the RF performance for HBTs. We present a method to reduce the extrinsic base-collector capacitance for HBT using a selective buried sub-collector (SBSC) layer. A 4000/spl Aring/ sub-collector layer is first grown on a SI ...


Properties of CVD-W overgrowth on PVD and MOCVD TiN layers

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105), 1998

The structure and electrical properties of CVD-W films on various PVD or MOCVD TiN films have been investigated. The growth orientations of the TiN adhesion layers were controlled by deposition method and film thickness. The growth orientations of CVD-W films were found to depend strongly on the microstructures of TiN. The grain sizes and electrical resistivity of CVD-W were found ...


Voltage-source controlled double-emitter phototransistors grown by low-pressure MOCVD

IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839), 2004

Single- and double-emitter heterojunction phototransistors with the same total emitter area have been fabricated and qualitatively investigated. The double emitters in two kinds of DE-HPTs are designed to have area ratio of 1:1 and 1:2, respectively. Both a positive and a negative voltage applied to the second emitter can control and enhance the collector photocurrent. It is found that 1:2 ...


Growth and properties III–V films and multilayered structures on fianite substrates and buffer layers

2010 3rd International Nanoelectronics Conference (INEC), 2010

The opportunity of the use Si and GaAs with single and double buffer layers and YSZ substrates for III-V(GaAs, InAs, GaSb, InGaAs, AlGaAs, GaN, AlN) epitaxy by a MOCVD method is investigated. The technology of single YSZ and double (YSZ on porous material) buffer layers preparation on Si and GaAs substrates is developed. By using porous substrate, we improved structure ...


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Educational Resources on MOCVD

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IEEE-USA E-Books

  • Characterization of Inter-Poly High- κ Dielectrics for Next Generation Stacked-Gate Flash Memories

    In this paper, the inter-poly dielectric (IPD) thickness, scaling, and reliability characteristics of Al2O3and HfO2IPDs are studied, which are then compared with TEOS IPD. Regardless of deposition tools, drastically leakage current reduction and reliability improvements have been demonstrated by replacing TEOS IPD with high-permittivity (high-κ) IPDs, which are suitable for mass production applications in the future. Moreover, MOCVD deposition can be used to further promote dielectric reliability when compared to reactive- sputtering deposition. By using MOCVD deposition, the QBDcan be significantly improved, in addition to reduced leakage current density, enhanced breakdown voltage and effective breakdown field. Our results clearly demonstrate that both MOCVD-Al2O3and MOCVD-HfO2IPD possess great potential for next generation stacked-gate flash memories.

  • A GaInP/GaAs HBT with a selective buried sub-collector layer grown by MOCVD

    Summary form only given. Extrinsic base-collector capacitance under the base ohmic contact region is often a large portion of the total collector capacitance which degrades the RF performance for HBTs. We present a method to reduce the extrinsic base-collector capacitance for HBT using a selective buried sub-collector (SBSC) layer. A 4000/spl Aring/ sub-collector layer is first grown on a SI GaAs substrate followed by chemical etching to form a sub- collector mesa. By choosing proper etchant, the sub-collector mesa has the shape of a trapezoid. The HBT structure is then regrown starting from the lightly doped collector layer to the emitter cap layer. Normal HBT processing is then employed. The emitter is aligned with the subcollector and the base contact region is formed on the lightly doped collector layer above the SI GaAs substrate. The collector layer under the base contact region is depleted under bias so that the extrinsic base-collector capacitance is substantially reduced. An experimental carbon-doped GaInP/GaAs HBT with SBSC grown by IMOCVD was fabricated and compared with a normal HBT.

  • Properties of CVD-W overgrowth on PVD and MOCVD TiN layers

    The structure and electrical properties of CVD-W films on various PVD or MOCVD TiN films have been investigated. The growth orientations of the TiN adhesion layers were controlled by deposition method and film thickness. The growth orientations of CVD-W films were found to depend strongly on the microstructures of TiN. The grain sizes and electrical resistivity of CVD-W were found to increase and decrease, respectively, with the grain sizes of underlying TIN layers.

  • Voltage-source controlled double-emitter phototransistors grown by low-pressure MOCVD

    Single- and double-emitter heterojunction phototransistors with the same total emitter area have been fabricated and qualitatively investigated. The double emitters in two kinds of DE-HPTs are designed to have area ratio of 1:1 and 1:2, respectively. Both a positive and a negative voltage applied to the second emitter can control and enhance the collector photocurrent. It is found that 1:2 and 1:1 DE-HPTs exhibit 1.85- and 1.5-fold optical gain of that from a SE-HPT, respectively.

  • Growth and properties III–V films and multilayered structures on fianite substrates and buffer layers

    The opportunity of the use Si and GaAs with single and double buffer layers and YSZ substrates for III-V(GaAs, InAs, GaSb, InGaAs, AlGaAs, GaN, AlN) epitaxy by a MOCVD method is investigated. The technology of single YSZ and double (YSZ on porous material) buffer layers preparation on Si and GaAs substrates is developed. By using porous substrate, we improved structure and morphology of YSZ buffer layers. It is shown, that III-V films received on YSZ substrates and buffer layers have single crystalline structure, good morphology and high electrophysical and photoluminescent properties. The use of the two-layer buffer in comparison with the single YSZ buffer improves adhesion of III-V films and raises its structural and electric homogeneity.

  • Characteristic Comparison of Epitaxial PZT and PMN-PT Films Grown On (100)<inf>c</inf>SrRuO<inf>3</inf>//(100)SrTiO<inf>3</inf>Substrates By Metalorganic Chemical Vapor Deposition

    Epitaxial Pb(Zr<sub>1-x</sub>Ti<sub>x</sub>)O<sub>3</sub>[PZT] and (1-x)Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>-xPbTiO<sub>3</sub>[PMN- PT] films, above 2 mum in thickness, were grown on (100)<sub>c</sub>SrRuO<sub>3</sub>//(100)SrTiO<sub>3</sub>substrates by metalorganic chemical vapor deposition (MOCVD). PbTiO<sub>3</sub>content (x) dependencies of the crystal structure and piezoelectric properties were systematically investigated for these films. The longitudinal electric-field- induced strain Deltax<sub>33</sub>and transverse piezoelectric coefficient e<sub>31,f</sub>for PZT films were also maximum at the almost center mixed phase region, on the other hand, that for PMN-PT films were maximum at larger x edge of rhombohedral (pseudocubic) region. Almost the same order of Deltax<sub>33</sub>was observed under applied electric fields up to 100 kV/cm, while larger e<sub>31,f</sub>was observed in PMN-PT films compared with the case of PZT films. e<sub>31,f</sub>coefficients of ~-8.9 C/m<sup>2</sup>and ~-11.0 C/m<sup>2</sup>were calculated for the PZT film with x=0.46 and for the PMN-PT film with x=0.39, respectively.

  • Low temperature MOCVD TiN process for 45nm contact metallization

    A low temperature (LT) MO TiN process has been developed to improve the bottom step coverage of MOCVD TiN film. The film properties, including film composition, grain orientation, and structure, have been characterized and are similar to the film properties of the original 405degC MO TiN process. It was also demonstrated that there is no negative impact of LT MO TiN on the iLB/W CVD fill/WCMP integration flow. The extended run showed that the new LT MO-TiN process is stable and has excellent particle performance.

  • Stacked structures In<inf>0.5</inf>Ga<inf>0.5</inf>As/GaAs quantum dots: Growth and characterization

    Stacked structures of self-assembled In0.5Ga0.5As/GaAs quantum dots (QDs) have been grown using Metal-Organic Chemical Vapor Deposition (MOCVD) with different number of stacks. High Resolution X-Ray Diffraction (HR-XRD) and Transmission Electron Microscope (TEM) characterization revealed that the formation of stacked self-assembled In0.5Ga0.5As QDs on GaAs (100) substrates were misaligned vertically and no visible defect has been detected from the cross-sectional TEM characterization. In addition, photoluminescence (PL) peak position is blue-shifted and PL intensity dramatically increased with increasing number of stacks. The peak and intensity of the PL measurement strongly depend on the structural of stacked self-assembled QDs and also the number of QDs layers.

  • Carrier loss in InGaAsP-InP lasers grown by hydride CVD

    We have experimentally characterized the quantum efficiency in InGaAsP hydride CVD grown lasers operating at 1.3 /spl mu/m. The observed reduction in external quantum efficiency with increasing temperature is found to be caused mostly by a reduction of the internal quantum efficiency. The experimental results are well explained with a theoretical model based on thermionic emission of carriers out of the active region. The model also helps to understand the difference in temperature performance between lasers studied in this paper and those grown by MOCVD.<<ETX>>

  • Fabrication of 150-nm T-Gate Metamorphic AlInAs/GaInAs HEMTs on GaAs Substrates by MOCVD

    Metamorphic AlInAs/GaInAs high-electron-mobility transistors (HEMTs) of 150-nm gate length with very good device performance have been grown by metal-organic chemical vapor deposition, with the introduction of an effective multistage buffering scheme. By using a combined optical and e-beam photolithography technology, submicrometer mHEMT devices have been achieved. The devices exhibit good dc and RF performance. The maximum transconductance was 1074 mS/mm. The nonalloyed ohmic contact resistance_Rc_was as low as 0.02 Ω·mm. The unity current gain cutoff frequency (_fT_) and the maximum oscillation frequency (_f_max) were 279 and 231 GHz, respectively. This device has the highest_fT_yet reported for 150-nm gate-length HEMTs. Also, an input capacitance to gate-drain feedback capacitance ratio_C_gs/_C_gdof 3.2 is obtained in the device.



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